APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570m typ @ Tj = 25C ID = 17A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction (PFC) * Interleaved PFC Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 1200 17 13 68 30 684 390 22 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM120VDA57T3G- Rev 0 September, 2009 Symbol VDSS APTM120VDA57T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25C VGS = 0V,VDS = 1000V Tj = 125C VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V Typ 570 3 Max 250 1000 684 5 100 Unit Max Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge VGS = 10V VBus = 600V ID = 17A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 5155 770 130 pF 187 nC 24 120 20 Inductive switching @ 125C VGS = 15V VBus = 800V ID = 17A RG = 5 15 ns 160 45 990 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, RG = 5 J 685 1565 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 17A, RG = 5 J 857 Chopper diode ratings and characteristics VRRM IRM IF VF Test Conditions Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 Maximum Peak Repetitive Reverse Voltage IF = 30A VR = 800V di/dt =200A/s www.microsemi.com V Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A Unit 100 500 Tj = 125C 30 2.6 3.2 1.8 Tj = 25C 300 Tj = 125C Tj = 25C 380 360 Tj = 125C 1700 A A 3.1 V ns nC 2-7 APTM120VDA57T3G- Rev 0 September, 2009 Symbol Characteristic APTM120VDA57T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Chopper diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.32 1.2 Unit C/W V 150 125 100 4.7 110 C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C Min T25 = 298.15 K TC=100C RT = R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T - exp B25 / 85 T25 T 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTM120VDA57T3G- Rev 0 September, 2009 SP3 Package outline (dimensions in mm) APTM120VDA57T3G Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 50 40 7V 6.5V 30 20 6V 10 5.5V 5 10 15 20 25 60 50 40 30 TJ=25C 20 10 5V 0 0 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) TJ=125C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 20 Normalized to VGS=10V @ 8.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55C 0 0.9 0.8 16 12 8 4 0 0 10 20 30 40 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (C) www.microsemi.com 4-7 APTM120VDA57T3G- Rev 0 September, 2009 ID, Drain Current (A) VGS=15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=8.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100s 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 limited by RDSon 1ms 10 10ms 1 Single pulse TJ=150C TC=25C 0 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=17A TJ=25C 12 VDS=240V 10 VDS=600V 8 VDS=960V 6 4 2 0 0 40 80 120 160 200 240 Gate Charge (nC) 5-7 APTM120VDA57T3G- Rev 0 September, 2009 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120VDA57T3G APTM120VDA57T3G Delay Times vs Current td(off) 160 140 VDS=800V RG=5 TJ=125C L=100H 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 VDS=800V RG=5 TJ=125C L=100H 100 80 60 40 tr 20 td(on) 40 tf 20 0 0 5 10 15 20 25 30 35 5 10 ID, Drain Current (A) 35 4 3 VDS=800V RG=5 TJ=125C L=100H 2.5 2 Eon Switching Energy (mJ) Eoff 1.5 1 0.5 0 VDS=800V ID=17A TJ=125C L=100H 3 Eoff 2 Eon Eoff 1 0 5 10 15 20 25 30 35 0 ID, Drain Current (A) 5 10 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 225 200 175 150 ZCS ZVS 125 100 VDS=800V D=50% RG=5 TJ=125C TC=75C 75 50 25 Hard switching 0 4 6 8 10 12 14 ID, Drain Current (A) 16 100 TJ=150C TJ=25C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTM120VDA57T3G- Rev 0 September, 2009 Switching Energy (mJ) 30 Switching Energy vs Gate Resistance Switching Energy vs Current Frequency (kHz) 15 20 25 ID, Drain Current (A) APTM120VDA57T3G Typical chopper diode performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge TJ=125C 40 20 TJ=25C 0 0.0 1.0 2.0 3.0 TJ=125C VR=800V 400 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125C VR=800V 30 A 2 15 A 1 0 200 400 600 800 -diF/dt (A/s) 1000 1200 800 1000 1200 30 30 A TJ=125C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 200 Max. Average Forward Current vs. Case Temp. 50 160 Duty Cycle = 0.5 TJ=175C 40 IF(AV) (A) C, Capacitance (pF) 45 A 3 0 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/s) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) VF, Anode to Cathode Voltage (V) 120 80 30 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (C) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTM120VDA57T3G- Rev 0 September, 2009 60 500 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 80