DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-220 TO-243AA* Die 350V 25 150mA DN2535N3 DN2535N5 -- -- 400V 25 150mA DN2540N3 DN2540N5 DN2540N8 DN2540ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Package Options Converters Linear amplifiers Constant current sources Power supply circuits Telecom SGD Absolute Maximum Ratings TO-92 Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage 20V Operating and Storage Temperature D -55C to +150C G Soldering Temperature* 300C D S * Distance of 1.6 mm from case for 10 seconds. TO-243AA (SOT-89) G D S TO-220 TAB: DRAIN Note: See Package Outline section for dimensions. 8-5 8 DN2535/DN2540 Thermal Characteristics Package ID (continuous)* ID (pulsed) TO-92 120mA 500mA 1.0W TO-220 500mA 500mA 15.0W TO-243AA 170mA jc Power Dissipation @ TC = 25C 1.6W (TA = 500mA 25) ja IDR* IDRM C/W C/W 125 170 120mA 500mA 8.3 70 500mA 500mA 15 78 170mA 500mA * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. TA = 25C Electrical Characteristics (@ 25C unless otherwise specified) Symbol Parameter Drain-to-Source Breakdown Voltage BVDSX Min DN2540 400 DN2535 350 Typ Unit Conditions V VGS = -5V, ID = 100A -3.5 V VDS = 25V, ID= 10A VDS = 25V, ID= 10A VGS(OFF) Gate-to-Source OFF Voltage VGS(OFF) Change in VGS(OFF) with Temperature 4.5 mV/C IGSS Gate Body Leakage Current 100 nA VGS = 20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 10 A VGS = -10V, VDS = Max Rating 1 mA VGS = -10V, VDS = 0.8 Max Rating TA = 125C mA VGS = 0V, VDS = 25V 25 VGS = 0V, ID = 120mA 1.1 %/C VGS = 0V, ID = 120mA IDSS Saturated Drain-to-Source Current 150 RDS(ON) Static Drain-to-Source ON-State Resistance RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance 325 CISS Input Capacitance 200 300 COSS Common Source Output Capacitance 12 30 CRSS Reverse Transfer Capacitance 1 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 17 m -1.5 Max ID = 100mA, VDS = 10V VGS = -10V, VDS = 25V pF f = 1 MHz VDD = 25V, ns ID = 150mA, RGEN = 25 800 V VGS = -10V, ISD = 120mA ns VGS = -10V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 8-6 DN2535/DN2540 Typical Performance Curves Output Characteristics Saturation Characteristics 0.5 250 VGS = 1.0V 0.5V VGS = 1.0V 0.5V 0V 200 ID (milliamps) ID (amperes) 0.4 0V 0.3 0.2 -0.5V 0.1 150 -0.5V 100 50 -1.0V -1.0V 0 0 0 160 80 320 240 400 0 1 2 VDS (volts) 3 4 5 VDS (volts) Transconductance vs. Drain Current 8 Power Dissipation vs. Temperature 0.5 20 VDS = 10V 0.4 TO-220 0.3 PD (watts) GFS (siemens) TA = -55C TA = 25C TA = 125C 0.2 10 0.1 TO-243AA (TA = 25C) TO-92 0 0 0 50 100 150 200 250 0 50 25 ID (milliamps) Maximum Rated Safe Operating Area 100 125 150 Thermal Response Characteristics 1.0 1 Thermal Resistance (normalized) TO-92/TO-220 (pulsed) TO-220 (DC) (TA = 25C) SOT-89 (DC) ID (amperes) 75 TC (C) 0.1 TO-92 (DC) 0.01 TC = 25C 0.001 1 TO-243AA TA = 25C PD = 1.6W 0.8 0.6 0.4 0.2 TO-220 TC = 25C PD = 15W TO-92 TC = 25C PD = 1.0W 0 10 100 1000 0.001 VDS (volts) 0.01 0.1 tp (seconds) 8-7 1 10 DN2535/DN2540 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 100 VGS = -5V VGS = 0V 80 RDS(on) (Ohms) BVDSS Normalized 1.05 1.0 0.95 0.9 60 40 20 0 -50 150 100 50 0 0 80 160 Tj (C) 240 320 400 ID (milliamps) Transfer Characteristics VGS(off) and RDS Variation with Temperature 0.40 2.5 TA = -55C VDS = 10V 0.32 2 RDS (ON) @ ID = 120mA Normalized ID (amperes) TA = 25C 0.24 TA = 125C 0.16 1.5 1 VGS(OFF) @ 10A 0.08 0.5 0 0 -3 1 0 -1 2 2 -50 0 50 100 150 Tj (C) VGS (Volts) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 200 15 CISS 10 VGS (Volts) C (Picofarads) 150 100 VGS = -10V 200pF 5 VDS = 20V 0 VDS = 40V 50 -5 COSS CRSS 170pF 0 0 10 20 30 40 0 VDS (Volts) 0.4 0.8 1.2 1.6 QC (Nanocoulombs) 8-8 2.0