APTGS50X170E2 - Advanced Power Technology

APTGS50X170E2

APTGS50X170E2– Rev 0 November, 2003

APT website – http://www.advancedpower.com

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All ratings @ T

j

= 25°C unless otherwise specified

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Pin out: APTGS50X170E2 (Long pins)

V W P+

11 129 107 8

UN-

1 2 3 4 5 6

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1700 V

T

C

= 25°C 100

I

C

Continuous Collector Current T

C

= 80°C 50

I

CM

Pulsed Collector Current T

C

= 25°C 150

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation T

C

= 25°C 350 W

RBSOA Reverse Bias Safe Operation Area T

j

= 125°C 100A@1600V

VCES = 1700V

IC = 50A @ Tc = 80°C

Application

• AC Motor control

Features

• Non Punch Through (NPT) Low Loss IGBT

®

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Very low stray inductance

• High level of integration

Benefits

• Stable temperature behavior

• Very rugged

• Solderable terminals for easy PCB mounting

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

• Low profile

3 Phase bridge

N

PT IGBT Power Module

APTGS50X170E2

APTGS50X170E2– Rev 0 November, 2003

APT website – http://www.advancedpower.com

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3

Electrical Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

BV

CES

Collector - Emitter Breakdown Voltage V

GE

= 0V, I

C

= 1mA

1700

V

T

j

= 25°C 0.02 0.1

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V

V

CE

= 1700V T

j

= 125°C 1 mA

T

j

= 25°C 2.7 3.3

V

CE(on)

Collector Emitter on Voltage V

GE

=15V

I

C

= 50A T

j

= 125°C 3.2 V

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 2.2 mA 3 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 100 nA

Dynamic Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance V

GE

= 0V, V

CE

= 25V

f = 1MHz 3500 pF

T

d(on)

Turn-on Delay Time 100

T

r

Rise Time 100

T

d(off)

Turn-off Delay Time 800

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 900V

I

C

= 50A

R

G

= 30Ω 30

ns

T

d(on)

Turn-on Delay Time 100

T

r

Rise Time 100

T

d(off)

Turn-off Delay Time 900

T

f

Fall Time 30

ns

E

off

Turn Off Energy

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 900V

I

C

= 50A

R

G

= 30Ω 30 mJ

Reverse diode ratings and characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 2.2 2.6

V

F

Diode Forward Voltage I

F

= 50A

V

GE

= 0V T

j

= 125°C 2.0 V

T

j

= 25°C 2

E

r

Reverse Recovery Energy I

F

= 50A

V

R

= 900V

di/dt =750A/µs T

j

= 125°C 4 mJ

T

j

= 25°C 6

Q

rr

Reverse Recovery Charge I

F

= 50A

V

R

= 900V

di/dt =750A/µs

T

j

= 125°C 12 µC

Thermal and package characteristics

Symbol

Characteristic Min Typ Max Unit

IGBT 0.37

R

thJC

Junction to Case Diode 0.63 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min,

I isol<1mA, 50/60Hz 3400 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

°C

Torque Mounting torque To Heatsink M5 2 3.5 N.m

Wt Package Weight 185 g

APTGS50X170E2

APTGS50X170E2– Rev 0 November, 2003

APT website – http://www.advancedpower.com

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Package outline

ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522