ON Semiconductor High-Speed Switching Diode MMDL914T1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C Peak Forward Surge Current Unit 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 477-02, STYLE 1 SOD-323 1 CATHODE **FR-4 Minimum Pad DEVICE MARKING 2 ANODE MMDL914T1 = 5D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 - Vdc - - 25 5.0 nAdc Adc OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CT - 4.0 pF Forward Voltage (IF = 10 mAdc) VF - 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr - 4.0 ns Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 1 Publication Order Number: MMDL914T1/D MMDL914T1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8.0 40 50 MMDL914T1 PACKAGE DIMENSIONS SOD-323 CASE 477-02 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. K A D 1 2 B DIM A B C D E H J K E C J NOTE 3 MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches SOD-323 Soldering Footprint http://onsemi.com 3 MMDL914T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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