1MBI400NP-120 1MBI400NN-120 IGBT Module 1200V / 400A 1 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Symbol VCES VGES Collector current IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *2 Terminals *3 Continuous 1ms Continuous 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Turn-off time Diode forward on voltage Reverse recovery time t n o c Characteristics Min. Typ. Max. - - 4.0 - - 60 4.5 - 7.5 - - 3.3 - 64000 - - 23200 - - 20640 - - 0.75 1.2 - 0.25 0.6 - 1.05 1.5 - 0.35 0.5 - - 3.0 - - 0.35 Dis Current control circuit . t c u d e u n i Electrical characteristics (at Tj=25C unless otherwise specified) Symbol E C *1 : Recommendable value : 2.5 to 3.5 N*m(M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N*m(M6) *3 : Recommendable value : 1.3 to 1.7 N*m(M4) Item Equivalent Circuit Schematic Unit V V A A A A W C C V N*m N*m N*m Rating 1200 20 400 800 400 800 3100 +150 -40 to +125 AC 2500 (1min.) 3.5 4.5 1.7 d o r p Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=400mA VGE=15V, IC=400A VGE=0V VCE=10V f=1MHz VCC=600V IC=400A VGE=15V RG=1.8 ohm IF=400A, VGE=0V IF=400A mA A V V pF Conditions Unit IGBT Diode the base to cooling fin C/W C/W C/W s V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*4 Characteristics Min. Typ. - - - - - 0.0125 Max. 0.04 0.12 - *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ IGBT Module 1MBI400NP-120 / 1MBI400NN-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125C 1000 1000 800 800 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 600 400 200 0 0 1 2 3 4 5 0 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C VCE [V] 10 Collector-Emitter voltage : 8 6 4 2 0 0 5 10 15 Di 8 . t c u 6 4 d e u n i t n o c s 20 Gate-Emitter voltage : VGE [V] 2 d o r p 0 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=1.8 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=600V, RG=1.8 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1 Collector-Emitter voltage : VCE [V] 10 VCE [V] 400 200 0 Collector-Emitter voltage : 600 100 100 10 10 0 200 400 600 800 0 200 400 Collector current : Ic [A] Collector current : Ic [A] http://store.iiic.cc/ 600 800 1MBI400NP-120 / 1MBI400NN-120 IGBT Module Dynamic input characteristics 25 800 20 1000 600 15 400 10 200 5 100 1 3 5 Gate resistance : RG [ohm] 0 0 10 1000 2000 3000 0 5000 4000 Gate charge : Qg [nC] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 1000 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Collector current : -Ic [A] (Forward current : IF [A] ) 800 600 400 200 0 0 1 2 3 4 100 d e u n i t n o c s Di Emitter-Collector voltage VECD [V] (Forward voltage : VF [V]) . t c u 0 5 200 400 600 800 Forward current : IF [A] Reversed biased safe operating area < 15V, Tj < +VGE=15V, -VGE = = 125C, RG > = 1.8 ohm Switching loss vs. Collector current Vcc=600V, RG=1.8 ohm, VGE=15V 175 4000 150 3000 125 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/cycle] d o r p 100 75 50 2000 1000 25 0 0 0 100 200 300 400 500 600 700 800 0 Collector current : Ic [A] http://store.iiic.cc/ 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 Gate-Emitter voltage : VGE [V] Tj=25C 1000 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=600V, Ic=300A, VGE=15V, Tj=25C IGBT Module 1MBI400NP-120 / 1MBI400NN-120 Capacitance vs. Collector-Emitter voltage Tj=25C Transient thermal resistance Capacitance : Cies, Coes, Cres [nF] Thermal resistance : R th (j-c) [C/W] 100 0.1 0.01 10 1 0.001 0.001 0.01 0.1 0 1 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.] Outline Drawings, mm Di d e u n i t n o c s . t c u mass : 370g http://store.iiic.cc/ d o r p 30 35