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FR011L5J (11m, -30V) Low-Side Reverse Bias / Reverse Polarity Protector Features Description Up to -30V Reverse-Bias Protection +29V 24-Hour "Withstand" Rating Nano Seconds of Reverse-Bias Blocking Response Time 11m Typical Series Resistance at 5V Fairchild circuit protection is proud to offer a new type of reverse bias protection devices. The FR devices are low resistance, series switches that, in the event of a reverse bias condition, shut off power and block the negative voltage to help protect downstream circuits. MicroFETTM 2x2mm Package Size RoHs Compliant USB Tested and Compatible Applications USB 1.0, 2.0 and 3.0 Devices Automotive Peripherals Reverse bias is an increasingly common fault event that may be generated by user error, improperly installed batteries, automotive environments, erroneous connections to third-party chargers, negative "hot plug" transients, inductive transients, and readily available negatively biased rouge USB chargers. The FR devices are optimized for the application to offer best in class reverse bias protection and voltage capabilities while minimizing size, series voltage drop, and normal operating power consumption. USB Charging In the event of a reverse bias application, FR011L5J devices effectively provide a full voltage block and can easily protect -0.3V rated silicon. Mobile Devices Mobile Medical POS Systems Toys Any DC Barrel Jack Powered Device Any DC Devices subject to Negative Hot Plug or Inductive Transients Pin 1 CTL From a power perspective, in normal bias, an 11m FR device in a 1.5A application will generate only 17mV of voltage drop or 25mW of power loss. In reverse bias, FR devices dissipate less then 20W in a 16V reverse bias event. This type of performance is not possible with a diode solution. Benefits extend beyond the device. Due to low power dissipation, not only is the device small, but heat sinking requirements and cost can be minimized as well. NEG POS MicroFET 2x2 mm Ordering Information Part Number Top Mark Package Packing Method FR011L5J 11L 6-Lead, Molded Leadless Package (MLP), Dual, Non-JEDEC, 2mm Square, Single-Tied DAP 3000 on Tape & Reel; 7-inch Reel, 12mm Tape (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector November 2012 Protected USB Device Circuit CTL Power Switch Startup Diode Inrush Reducer NEG I IN POS Power Source (USB Connector) USB Device Circuit VIN CTL NEG OV Bypass Protection POS FR011L5J Figure 1. Block Diagram Figure 2. Typical Schematic Pin Configuration Pin 1 CTL NEG POS Figure 3. Pin Assignments Pin Definitions Name Pin Description POS 4 The ground of the load circuit being protected. Current flows into this pin during normal operation. CTL 3 The control pin of the device. A positive voltage to the NEG pin turns the switch on and a negative voltage turns the switch to a high-impedance state. NEG 1, 2, 5, 6 The ground of the input power source. Current flows out of this pin during normal operation. (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 2 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Diagrams Values are at TA=25C unless otherwise noted. Symbol Parameter Value Steady-State Normal Operating Voltage between CTL and NEG Pins (VIN = V+ MAX_OP, IIN = 1.5A, Switch On) +20 V+ 24 24-Hour Normal Operating Voltage Withstand Capability between CTL and NEG Pins (VIN = V+ 24, IIN = 1.5A, Switch On) +29 V- MAX_OP Steady-State Reverse Bias Standoff Voltage between CTL and NEG Pins (VIN = V- MAX_OP) -30 V+ MAX_OP (2) IIN Input Current TJ Operating Junction Temperature VIN = 5V, Continuous PD Power Dissipation (see Figure 4) TA = 25C(2) (see Figure 4) (2) TA = 25C IDIODE_PULSE Pulsed Diode Forward Current from POS to NEG (300s Pulse) Electrostatic Discharge Capability Charged Device Model, JESD22-C101 System Model, IEC61000-4-2 (CTL is shorted to POS)(3) A C W 2 A 210 Human Body Model, JESD22-A114 ESD 10 0.9 IDIODE_CONT Steady-State Diode Continuous Forward Current from POS to NEG V 150 2.4 (see Figure 5) Unit 0.6 2 Contact 8 Air 15 kV Notes: 1. The V+24 rating is NOT a survival guarantee. It is a statistically calculated survivability reference point taken on qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is intended to indicate the device's ability to withstand transient events that exceed the recommended operating voltage rating. Specification is based on qualification devices tested using accelerated destructive testing at higher voltages, as well as production pulse testing at the V+24 level. Production device field life results may vary. Results are also subject to variation based on implementation, environmental considerations, and circuit dynamics. Systems should never be designed with the intent to normally operate at V+24 levels. Contact Fairchild Semiconductor for additional information. 2. The device power dissipation and thermal resistance (R) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 4 and Figure 5 3. Conducted with shorted load. Open load performance is not guaranteed. Figure 4. 1 Square Inch of 2-ounce copper Figure 5. Minimum Pads of 2-ounce Copper Thermal Characteristics Symbol RJA RJA Parameter (2) Thermal Resistance, Junction to Ambient (2) Thermal Resistance, Junction to Ambient (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 Value (see Figure 4) 61 (see Figure 5) 153 Unit C/W www.fairchildsemi.com 3 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Absolute Maximum Ratings Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. VIN = +4V, IIN = 1.5A 13 20 VIN = +5V, IIN = 1.5A 11 15 VIN = +5V, IIN = 1.5A, TJ = 125C 15 VIN = +12V, IIN = 1.5A 9 13 2.4 3.5 Unit Positive Bias Characteristics RON VON Device Resistance, Switch On Input Voltage, VIN, at which Voltage at POS, VPOS, Reaches a Certain Level at Given Current IIN = 100mA, VPOS = 45mV, VNEG = 0V 1.4 VON / TJ Temperature Coefficient of VON IDIODE_CONT Continuous Diode Forward Current VF IBIAS Diode Forward Voltage m -3.9 VCTL = VPOS VCTL = VPOS, IDIODE = 0.1A, Pulse width < 300s Bias Current Flowing out of NEG Pin VCTL = 5V, VNEG = 0V, during Normal Bias Operation No Load 0.56 0.60 V mV/C 2 A 0.73 V 15 nA Negative Bias Characteristics V- MAX_OP Reverse Bias Breakdown Voltage V- MAX_OP Reverse Bias Breakdown Voltage / TJ Temperature Coefficient -30 IIN = -250A, VCTL = VPOS = 0V I- Leakage Current from NEG to POS in Reverse-Bias Condition VNEG = 20V, VCTL = VPOS = 0V tRN Time to Respond to Negative Bias Condition VNEG = 5V, VCTL = 0V, CLOAD = 10F, Reverse Bias Startup Inrush Current = 0.2A V 16 mV/C 1 A 50 ns Dynamic Characteristics CI Input Capacitance between CTL and NEG CS Switch Capacitance between POS and NEG CO Output Capacitance between CTL and POS RC Control Internal Resistance (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 1011 VIN = -5V, VCTL = VPOS = 0V, f = 1MHz 81 pF 1456 1.7 www.fairchildsemi.com 4 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Electrical Characteristics 16 Input Voltage, VIN = 4V 14 12 5V 10 8 9V 6 12V 16V 4 2 0 0 2 4 6 8 10 12 14 16 18 20 3.2 3.0 ON THE SWITCH (V) VON, MINIMUM INPUT VOLTAGE TURNING RON, SWITCH ON-RESISTANCE (m) TJ = 25C unless otherwise specified. 2.8 2.6 2.4 2.2 0.0 0.3 0.6 1.0 IIN = 0.1A o TJ = 25 C 0.8 0.9A 0.6 1.5A 0.4 0.2 1 3 5 7 9 11 13 15 17 19 21 2.1 14 IIN = 0.1A 13 12 VIN = 5V 11 10 12V 9 8 7 6 -75 -50 -25 0 25 50 75 100 125 150 o Figure 9. Switch On Resistance vs. Junction Temperature at 0.1A 15 1000 IIN = 1.5A PEAK PACKAGE POWER (W) RON, SWITCH ON-RESISTANCE (m) 1.8 TJ, JUNCTION TEMPERATURE ( C) Figure 8. Effective Switch Resistance RSW vs. Input Voltage VIN 13 12 VIN = 5V 11 12V 10 9 8 7 6 -75 1.5 15 VIN, INPUT VOLTAGE (V) 14 1.2 Figure 7. Minimum Input Voltage to Turn On Switch vs. Current at 45mV Switch Voltage Drop RON, SWITCH ON-RESISTANCE (m) RSW, EFFECTIVE SWITCH RESISTANCE () Figure 6. Switch On Resistance vs. Switch Current 0.0 0.9 IIN, INPUT CURRENT (A) IIN, INPUT CURRENT (A) -50 -25 0 25 50 75 10 1 0.1 1E-4 100 125 150 1E-3 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) o TJ, JUNCTION TEMPERATURE ( C) Figure 10. Switch On Resistance vs. Junction Temperature at 1.5A (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 100 Figure 11. Single-Pulse Maximum Power vs. Time www.fairchildsemi.com 5 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Typical Characteristics FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Typical Characteristics IF, STARTUP DIODE FORWARD CURRENT (A) TJ = 25C unless otherwise specified. 100 VPOS = VCTL = 0V 10 o TJ = 125 C 1 o 25 C 0.1 o -55 C 0.01 1E-3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, STARTUP DIODE FORWARD VOLTAGE (V) Figure 12. Startup Diode Current vs. Forward Voltage (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 6 Protected USB Device Circuit I IN Power Source (USB Connector) USB Device Circuit VIN CTL NEG POS FR011L5J Figure 13. Typical Application Circuit for USB Applications Q1-1 FDS8858CZ 5,6 D2 3 S2 iIN 4 G2 R1 DC Power Supply C1 Q1-2 FDS8858CZ 7,8 D1 2 G1 Pulse Generator R2 R3 C2 1 S1 CTL NEG POS FR011L5J Figure 14. Startup Test Circuit - Normal Bias with FR011L5J (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 7 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Application Test Configurations Pulse Generator iIN R2 1 S1 2 G1 DC Power Supply Q1-2 FDS8858CZ 7,8 D1 C1 R3 C2 R1 4 G2 3 S2 CTL 5,6 D2 NEG Q1-1 FDS8858CZ POS FR011L5J Figure 15. Startup Test Circuit - Reverse Bias with FR011L5J Q1-1 FDS8858CZ 5,6 D2 3 S2 iIN 4 G2 R1 DC Power Supply Q1-2 7,8 D1 FDS8858CZ C1 2 G1 R3 Pulse Generator R2 C2 1 S1 Figure 16. Startup Test Circuit - without FR011L5J (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 8 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Application Test Configurations (Continued) Typical USB3.0 conditions. VIN, 2V/div. The input voltage between CTL and NEG VD, 1V/div. The startup diode voltage between POS and NEG VOUT, 2V/div. The output voltage between CTL and POS iIN, 5A/div. The input current flowing from POS to NEG Time: 5s/div Figure 17. Normal Bias Startup Waveform, DC Power Source=5V, C1=100F, C2=10F, R1=R2=10k, R3=27 VIN, 2V/div. The input voltage between CTL and NEG VD, 2V/div. The startup diode voltage between POS and NEG VOUT, 1V/div. The output voltage between CTL and POS iIN, 0.1A/div. The input current flowing out of NEG Time: 100ns/div Figure 18. Reverse Bias Startup Waveform, DC Power Source=5V, C1=100F, C2=10F, R1=R2=10k, R3=27 (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 9 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Typical Application Waveforms Typical USB3.0 conditions. VIN, 2V/div. The voltage applied on the load circuit iIN, 2A/div. The input current Time: 5us/div Figure 19. Startup Waveform without FR011L5J, DC Power Source=5V, C1=100F, C2=10uF, R1=R2=10k, R3=27 Application Information USB3.0 device is reversely biased; the output voltage is near 0 and response time is less than 50ns. Figure 17 shows the voltage and current waveforms when a virtual USB3.0 device is connected to a 5V source. A USB application allows a maximum source output capacitance of C1 = 120F and a maximum device-side input capacitance of C2 = 10F plus a maximum load (minimum resistance) of R3 = 27. C1 = 100F, C2 = 10F and R3 = 27 were used for testing. Figure 19 shows the voltage and current waveforms when no reverse bias protection is implemented. In Figure 17, while the reverse bias protector is present, the input voltage, VIN, and the output voltage, VO, are separated and look different. When this reverse bias protector is removed, VIN and VO merge, as shown inFigure 19 as VIN. This VIN is also the voltage applied to the load circuit. It can be seen that, with reverse bias protection, the voltage applied to the load and the current flowing into the load look very much the same as without reverse bias protection. When the DC power source is connected to the circuit (refer to Figure 13), the built-in startup diode initially conducts the current such that the USB device powers up. Due to the initial diode voltage drop, the FR011L5J effectively reduces the peak inrush current of a hot plug event. Under these test conditions, the input inrush current reaches about 6.3A peak. While the current flows, the input voltage increases. The speed of this input voltage increase depends on the time constant formed by the load resistance R3 and load capacitance C2. The larger the time constant, the slower the input voltage increase. As the input voltage approaches a level equal to the protector's turn-on voltage, VON, the protector turns on and operates in Low-Resistance Mode as defined by VIN and operating current IIN. Benefits of Reverse Bias Protection The most important benefit is to prevent accidently reverse-biased voltage from damaging the USB load. Another benefit is that the peak startup inrush current can be reduced. How fast the input voltage rises, the input/output capacitance, the input voltage, and how heavy the load is determine how much the inrush current can be reduced. In a 5V USB application, for example, the inrush current can be 5% - 20% less with different input voltage rising rate and other factors. This can offer a system designer the option of increasing C2 while keeping "effective" USB device capacitance down. In the event of a negative transient, or when the DC power source is reversely connected to the circuit, the device blocks the flow of current and holds off the voltage, thereby protecting the USB device. Figure 18 shows the voltage and current waveforms when a virtual (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 10 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Typical Application Waveforms (Continued) 2.00 0.10 C (0.20) A 1.00 B 2X 2.00 No Traces allowed in this Area 4 6 1.35 1.05 2.30 (0.475) 0.10 C Pin #1 location 1 2X TOP VIEW 3 0.40 TYP 0.65 TYP RECOMMENDED LAND PATTERN OPT 1 0.8 MAX 0.10 C (0.20) 0.08 C 0.05 0.00 C SIDE VIEW SEATING PLANE 0.15 1.00 0.80 1 PIN #1 IDENT 6X 0.33 0.20 0.45 0.20 0.50 0.30 3 1.00 6 0.61 0.51 1.05 0.95 0.50 6 4 0.65 1.30 0.35 6X 0.25 0.10 0.05 4 1.35 0.66 2.30 1.05 1 0.65 TYP C A B C 3 0.40 TYP RECOMMENDED LAND PATTERN OPT 2 BOTTOM VIEW A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILENAME: MKT-MLP06Lrev3. Figure 20. 6-Lead, Molded Leadless Package (MLP), Dual, Non-JEDEC, 2mm Square, Single-Tied DAP Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 11 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector Physical Dimensions 2Cool AccuPower AX-CAP* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FlashWriter(R)* FPS PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mWSaver OptoHiT OPTOLOGIC(R) OPTOPLANAR(R) Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R) * (R) The Power Franchise(R) TinyBoost TinyBuck TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or are intended for surgical implant into the body or (b) support or system whose failure to perform can be reasonably expected to sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I62 (c) 2012 Fairchild Semiconductor Corporation FR011L5J * Rev. C3 www.fairchildsemi.com 12 FR011L5J -- Low-Side Reverse Bias / Reverse Polarity Protector TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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