Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 400V
▼ 100% Avalanche Rated RDS(ON) 16Ω
▼ Fast Switching Performance ID0.5A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 7.2 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
201018072-1/4
±20
Linear Derating Factor
AP01N40J
0.5
0.14
0.5
0.4
RoHS-compliant Product
2
17.4
Parameter Rating
400
-55 to 150
Storage Temperature Range -55 to 150
Parameter
G
D
S
The TO-251 package is widely preferred for commercial-industrial
through-hole applications.
GDSTO-251(J)
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 400 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=0.5A - - 16 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=0.5A - 0.5 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=400V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=320V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge3ID=1A - 2.9 4.6 nC
Qgs Gate-Source Charge VDS=320V - 0.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.6 - nC
td(on) Turn-on Delay Time3VDD=200V - 7.7 - ns
trRise Time ID=1A - 12 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 23 - ns
tfFall Time RD=200Ω-73-ns
Ciss Input Capacitance VGS=0V - 76 125 pF
Coss Output Capacitance VDS=25V - 11 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=2A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=1A, VGS=0V - 260 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 460 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
AP01N40J
2/4
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP01N40J
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=0.5A
VG=10V
0
0.2
0.4
0.6
0.8
1
1.2
0 4 8 12162024
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
9.0V
8.0V
7.0V
VG=6.0V
0
0.1
0.2
0.3
0.4
0.5
0.6
04812162024
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0.8
1.2
1.6
2
2.4
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP01N40J
0.01
0.1
1
10
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
01234
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=1A
VDS =320V
1
10
100
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
