This is information on a product in full production.
June 2013 DocID024685 Rev 1 1/9
BTW69-1200N
50 A – 1200 V non insulated SCR thyristor
Datasheet - production data
Features
On-state rms current: 50 A
Blocking voltage: 1200 V
Gate current: 50 mA
Applications
Solid state relay
Battery charging system
Uninterruptible power supply
Variable speed motor drive
Industrial welding systems
By pass AC switch
Description
Available in non insulated TOP3 high power
package, the BTW69-1200N is suitable for
applications wh er e po we r switching and power
dissipation are critical, such as by-pass switch,
controlled AC rectifier bridge, in solid state relay,
battery charger, uninterruptible power supply,
welding equipment and motor driver applications.
Based on a clip assembly technology, the
BTW69-1200N offers a supe rio r pe rf or ma n ce in
surge current handling and thermal cooling
capabilities.
A
A
K
G
TOP3 non insulated
A
K
G
Table 1. Device summary
Symbol Value
IT(RMS) 50 A
VDRM/VRRM 1200 V
IGT 50 mA
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Characteristics BTW69-1200N
2/9 DocID024685 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings (limiti ng values)
Symbol Parameter Value Unit
IT(RMS) On-state current rms (180° conduction angle) Tc = 102 °C 50 A
IT(AV) Average on-state current (180° conduction angle) Tc = 102 °C 31 A
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25 °C 763 A
tp = 10 ms 700
I²tI
²t Valu e tp = 10 ms Tj = 25 °C 2450 A2S
dI/dt Critical rate of rise of on-state current
Gate supply: IG = 100 mA, dIG/dt = 1 A/µs 100 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 8 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range - 40 to + 150
- 40 to + 125 °C
VGM Maximum peak reverse gate voltage 5 V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test co nditions Value Unit
IGT VD = 12 V, RL = 33
MIN. 8 mA
MAX. 50
VGT MAX. 1.3 V
VGD VD = VDRM, RL = 3.3 kTj = 125 °C MIN. 0.2 V
IHIT = 500 mA, gate open MAX. 100 mA
ILIG = 1.2 x IGT TYP. 125 mA
tgt IT = 50 A, VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs TYP. 2 µs
dV/dt VD = 67% VDRM, gate open Tj = 125 °C MIN. 1000 V/µs
tq
VD = 800 V, ITM = 50 A, VR = 75 V,
tp = 100 µs, dITM/dt = 30 A/µs,
dVD/d t = 20 V /µs Tj = 125 °C TYP. 100 µs
VTM ITM = 100 A, tp = 380 µs Tj = 25 °C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125 °C MAX. 0.9 V
RDDynamic resistance Tj = 125 °C MAX. 8.5 m
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj = 25 °C MAX. 10 µA
Tj = 125 °C 5 mA
DocID024685 Rev 1 3/9
BTW69-1200N Characteristics
9
Table 4. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC, typ.) 0.45 °C/W
Rth(j-a) Junction to ambient (DC) 50 °C/W
Figure 1. Maximum average power dissipation
versus average on- state current Figure 2. Correlation between maximum
average power dissipation and maximum
allowable temperatures
P(W)
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30 35 40
DC
I (A)
T(AV)
360°
a
a= 180°
a= 120°
a= 90°
a= 60°
a= 30°
0
10
20
30
40
50
0 25 50 75 100 125
P(AV) (W)
100.2
102.7
105.2
107.7
110.2
112.7
115.2
117.7
120.2
122.7
Tc(°C)
RTH
(assembly)
0 °C/W
1 °C/W
2 °C/W
3 °C/W
Ta(°C)
a= 180°
Figure 3. Average and DC on-state current
versus case temperature Figure 4. Average and DC on-state current
versus am bi en t te mp era tu re
I (A)
T(AV)
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125
DC
a= 180°
a= 120°
a= 90°
a= 60°
a= 30°
T (°C)
case
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125
DC
I (A)
T(AV)
a= 180°
T (°C)
a
Characteristics BTW69-1200N
4/9 DocID024685 Rev 1
Figure 5. Relative variation of thermal
impedance versus pulse duration Figure 6. Relative variation of gate trigger
current and gate trigger volt age versus junct ion
temperature (typ ical value)
K=[Z /R ]
th th
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Zth(j-a)
Zth(j-c)
t (s)
p
I ,V [T ] / I ,V [T =25°C]
GT GT j GT GT j
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
-40 -20 0 20 40 60 80 100 125
IGT
VGT
T (°C)
j
Figure 7. Relative variation of holding, and
latching currents versus junction temperature
(typical values)
Figure 8. Surge peak on-state current versus
number of cycles
I ,I [T ] / I ,I [T =25°C]
HL j HL j
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
-40 -20 0 20 40 60 80 100 125
IH
IL
T (°C)
j
I (A)
TSM
0
50
100
150
200
250
300
350
400
450
500
550
600
1 10 100 1000
Non repetitive
T
j
initial=25 °C
Repetitive
T
C
=102°C
t =10ms
p
One cycle
Number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of I2t versus
sinusoidal pulse
Figure 10. On-state characteristics (maximum
values)
I (A), I t (A s)
TSM 22
10
100
1000
10000
0.01 0.10 1.00 10.00
dI/dt limitation: 100 A/µs
ITSM
I²t
Tjinitial=25 °C
t (ms)
p
pulse with width t < 10 ms
p
1
10
100
1000
0.0 1.0 2.0 3.0 4.0
ITM (A)
Tjmax :
Vto = 0.9 V
Rd= 8.5 mWTj=25 °CTj=125 °C VTM (V)
DocID024685 Rev 1 5/9
BTW69-1200N Characteristics
9
Figure 11. Relative variation of leakage current
versus junction temperature for different values
of blocking voltage (600 and 800 V)
Figure 12. Relative variation of le akage c urre nt
versus junction temperature for different values
of blocking voltage (1000 and 1200 V)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125
IDRM, IRRM [Tj;V DRM, VRRM ]/I
DRM, IRRM
VDRM=VRRM=800 V
VDRM=VRRM=600 V
Tj(°C)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125
IDRM, IRRM [Tj;V DRM, VRRM ]/I
DRM, IRRM
VDRM=VRRM=1200 V
VDRM=VRRM=1000 V
Tj(°C)
Package information BTW69-1200N
6/9 DocID024685 Rev 1
2 Package information
Epoxy meets UL94,V0
Lead-free p ackages
Cooling method: by conduction (C)
Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental comp liance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 13. TO P3 dimension definitions
R
H
K
G
F
ED
B
A
C
JJ
P
ØL
DocID024685 Rev 1 7/9
BTW69-1200N Package information
9
Table 5. TOP3 dime nsion values
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
ØL 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181 typ.
Ordering information BTW69-1200N
8/9 DocID024685 Rev 1
3 Ordering information
Figure 14. Ordering information scheme
4 Revision history
Table 6. Ordering information
Order code Marking Package Weight Base qty Delivery mode
BTW69-1200N BTW691200N TOP3 4.55 g 30 Tube
BTW 69 - 1200 N
Standard SCR series
Type
69 = 50 A
Voltage
1200 = 1200 V
Package
N = TOP3 non insulated
Table 7. Document revision history
Date Revision Changes
14-Jun-2013 1 Initial release.
DocID024685 Rev 1 9/9
BTW69-1200N
9
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