2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features * Low on-resistance RDS =90 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.3.00 Sep 07, 2005 page 1 of 8 2 3 S 2SK3161 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID Ratings 200 20 15 60 15 15 15 75 150 -55 to +150 ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Rev.3.00 Sep 07, 2005 page 2 of 8 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 20 -- -- 1.0 -- -- 16 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max -- -- 10 10 2.5 115 125 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10V ID = 8 A, VGS = 10VNote4 ID = 8 A, VGS = 4 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 8 A, VGS = 10 V, RL = 3.75 IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 diF/ dt = 50 A /s 2SK3161 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 60 40 20 10 10 3 DC PW Op era 1 =1 0m tio s( n( Tc 0.3 Operation in this area is 0.1 limited by RDS(on) 1s ho =2 t) 5C ) 0.03 Ta = 25C 0.01 0 50 100 150 1 200 5 2 10 20 50 100 200 500 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 20 Pulse Test 10 V 40 VDS = 10 V Pulse Test 4V 6V Drain Current ID (A) Drain Current ID (A) 10 s 0 1 m s s 30 Drain Current ID (A) Channel Dissipation Pch (W) 80 3.5 V 30 20 3V 10 VGS =2.5 V 16 12 8 Tc = 75C 4 -25C 25C 2 4 6 8 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 4 3 2 ID = 15 A 10 A 1 5A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.3.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) (m) Drain to Source Saturation Voltage VDS (on) (V) 0 500 Pulse Test 200 VGS = 4 V 100 10 V 50 20 10 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 5, 10 A 300 15 A 200 VGS = 4 V 5, 10 A 100 15 A 10 V 0 -40 0 40 80 120 160 20 Tc = -25C 75C 10 5 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 di / dt = 50 A / s VGS = 0, Ta = 25C 5000 Capacitance C (pF) 500 200 100 50 20 2000 Ciss 1000 500 Coss 200 100 Crss 50 VGS = 0 f = 1 MHz 20 10 0.1 10 0.3 1 3 10 30 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 200 VDS VGS 160 VDD = 150 V 100 V 50 V 120 80 ID = 15 A 40 0 0 100 80 120 160 Gate Charge Qg (nc) Rev.3.00 Sep 07, 2005 page 4 of 8 12 8 4 VDD = 150 V 100 V 50 V 40 16 0 200 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 25C Drain Current ID (A) 1000 Drain to Source Voltage VDS (V) 50 Case Temperature TC (C) 500 300 Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (m) 2SK3161 100 td(off) tf tr 30 td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 10 Drain Current ID (A) 30 100 2SK3161 16 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 20 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 12 8 VGS = 0, -5 V 4 5V Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 20 IAP = 15 A VDD = 50 V duty < 0.1 % Rg > 50 16 12 8 4 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.67C/W, Tc = 25C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 0 Rev.3.00 Sep 07, 2005 page 5 of 8 VDD 2SK3161 Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.3.00 Sep 07, 2005 page 6 of 8 tr 90% td(off) tf 2SK3161 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 0.3 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.3.00 Sep 07, 2005 page 7 of 8 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 1.7 SC-83 2.49 0.2 11.0 0.5 11.3 0.5 0.3 10.0 +- 0.5 (1.4) 4.44 0.2 10.2 0.3 0.2 0.86 +- 0.1 JEITA Package Code Unit: mm 2.2 2SK3161 Ordering Information Part Name 2SK3161-E 2SK3161STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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