Rev.3.00 Sep 07, 2005 page 1 of 8
2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1086-0300
(Previous: ADE-208-734A)
Rev.3.00
Sep 07, 2005
Features
• Low on-resistance
RDS =90 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK3161
Rev.3.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±20 V
Drain current ID 15 A
Drain peak current ID(pulse)Note1 60 A
Body-drain diode reverse drain current IDR 15 A
Avalanche current IAP Note3 15 A
Avalanche energy EAR Note3 15 mJ
Channel dissipation Pch Note2 75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 200 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10V
RDS(on) — 90 115 mΩ I
D = 8 A, VGS = 10VNote4
Static drain to source on state
resistance RDS(on) — 95 125 mΩ I
D = 8 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 16 20 — S ID = 8 A, VDS = 10 V Note4
Input capacitance Ciss — 1600 — pF
Output capacitance Coss — 510 — pF
Reverse transfer capacitance Crss — 250 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 20 — ns
Rise time tr — 120 — ns
Turn-off delay time td(off) — 400 — ns
Fall time tf — 170 — ns
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
Body–drain diode forward voltage VDF — 0.85 — V IF = 15 A, VGS = 0
Body–drain diode reverse recovery
time trr — 100 — ns
IF = 15 A, VGS = 0
diF/ dt = 50 A /µs
Note: 4. Pulse test
2SK3161
Rev.3.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
80
60
40
20
050 100 150 200
100
3
10
1
0.1
0.01
12 10 20 100
20
16
12
8
4
012345
0246810
Ta = 25°C
Tc = 75°C
25°C
–25°C
Operation in
this area is
limited by R
DS(on)
V
DS = 10 V
Pulse Test
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
50
40
30
20
10
3.5 V
3 V
V
GS
=2.5 V
10 V
Pulse Test
6 V 4 V
0.3
0.03
500
30
550 200
110
5
500
20
50
10
2
5
4
3
2
1
048
12 16 20
ID = 15 A
5 A
10 A
5020
200
100
V
GS
= 4 V
10 V
Pulse Test
Pulse Test
100
2SK3161
Rev.3.00 Sep 07, 2005 page 4 of 8
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
500
400
300
200
100
–40 0 40 80 120 160
0
0.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
V
GS
= 4 V
10 V
25°C
Tc = –25°C
75°C
Pulse Test
V
DS
= 10 V
Pulse Test
15 A
15 A
5, 10 A
5, 10 A
0.1 0.3 1 3 10 30 100 01020304050
2000
10000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
40 80 120 160 200
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1 0.3 1310 30 100
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
10
20
50
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 15 A
V
GS
V
DS
V
DD
= 150 V
100 V
50 V
tf
tr
td(on)
td(off)
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
V
DD
= 150 V
100 V
50 V
5000
2SK3161
Rev.3.00 Sep 07, 2005 page 5 of 8
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
V
GS
= 0, –5 V
10 V
5 V
20
16
12
8
4
25 50 75 100 125 150
0
Pulse Test
I
AP = 15 A
V
DD = 50 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.67°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK3161
Rev.3.00 Sep 07, 2005 page 6 of 8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
2SK3161
Rev.3.00 Sep 07, 2005 page 7 of 8
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK3161
Rev.3.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SK3161-E 500 pcs Box (Sack)
2SK3161STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
