SUPERTEX INC O1 pe Barzaeqs OO01654 q i Ordering Information N-Channel! Enhancement-Mode Vertical DMOS Power FETs BV sg / Rosion) loon) Order Number / Package BY igs (max) (min) TO-3 TO-39 TO-220 Dice 160V 10 6.0A VN1216N1 VN1216N2 VN1216N5 VN1216ND 200V 12 6.0A VN1220N1 VN1220N2 VN1220N5 VN1220ND Features Advanced DMOS Technology O Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . . ize a vertical DMOS structure and Supertex's weil-proven silicon- (Low power drive requirement gate manufacturing process. This combination produces devices O Ease of paralleling with the power handling capabilities of bipolar transistors and with teabt the high input impedance and negative temperature coefficient 01 bow Og, and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, O Excellent thermal stability these devices are free from thermal runaway and thermally- 1 Integral Source-Drain diode induced secondary breakdown. tah} : . : Supertex Vertical DMOS Power FETs are ideally suited to a wide (1 High input impedance and high gain ; range of switching and amplifying applications where high break- O Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) O Motor control OO Converters Amplifiers 1 Switches Ss, a O Power supply circuits TO-3 O Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) POT O TL Absolute Maximum Ratings i Drain-to-Source Voltage BVoss 10-39 TO-220 Drain-to-Gate Voltage BV igs Gate-to-Source Voltage +20V Operating and Storage Temperature -55C to +150C 300C Note 1: See Package Outline section for discrete pinouts. Soldering Temperature* *Distance of 1.6 mm from case for 10 seconds. {oa HRA) Perey emer Pt ASN ene et Arm a hm ASAIO Naan yk y LATOR sm Yo] 1 TAMA* SUPERTEX INC O14 ve fJaz73295 OO01655 0 i . VN12G Thermal Characteristics . T2397: 39-72 Package I, (continuous)* !, (pulsed)* Power Dissipation re . 8, lon lone @T,= 25C Cciw oCW . TO-3 6.0A 14.0A 100W 30 4.25 6A 144 t TO-39 3.0A 11.0A 6.5W 125 20 3A A i TO-220 4.5A 13.0A 45W 70 2.75 4.5A 13A i ly (continuous) is limited by max rated T,. i Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) | Symbol! Parameter Min Typ Max Unit Conditions BVogg Drain-to-Source VN1220 | 200 i Breakdown Voltage VNizi6e | 160 V Ves = 9, ty = 10MA Vesiny Gate Threshold Voltage 1 3 Vv Ves = Vos: |p = TOMA AV asuny Change in Vesin With Temperature 3.7 4.5 mVPC Vos = Vos: fy = TOMA less Gate Body Leakage 1 100 nA Veg = 20V, Vi, = 0 100 HA Vag = 0, Vos = Max Rating i loss Zero Gate Voltage Drain Current 10 mA Vos = 9; Vpg = 0.8 Max Rating T, = 125C loom ON-State Drain Current 4 8 Vag = SV, Vig = 25V 8 12 A Vos = 10V, Vig = 25V Rosi | Static Drain-to-Source ort ey Veg = 8V; I, = 2A ON-State Resistance 0.6 1 Vag = 10V, I, = 2A AR peony) Change in Foson with Temperature 1.0 14 | %PC Vgg = 10V, I, = 5A G.. Forward Transconductance 2.0 3.2 au Vog = 25V, Ip = 5A Css Input Capacitance 550 650 C Common Source Output Capacitance 180 250 pF Veg = 0: Vong = 25V OSs f= 1 MHz Cass Reverse Transfer Capacitance 12 20 leony Turn-ON Delay Time 8 20 a Vip = 25V t Rise Time 10 20 oD - ns Ip=2A tory Turn-OFF Delay Time 30 90 R. = 500 t Fall Time 30 60 s" Vep Diode Forward Voltage Drop 1.3 2.5 Vv Veg = 9) Igy = 24 t, Reverse Recovery Time 500 ns Ves = 0, ben = 1A Note 1: Ail D.C, parameters 100% tested at 25C unless otherwise stated (Pulse test: 300ys pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 90% input 10% _____. {PULSE SCOPE 1(ON) \OFF) | GENERATOR I | DwU.T. ta(ON) , tr ta(OFF), tt I Output I 10% ZL I 9 , + e 90% 90% Poo i = = 8-86 RR Bee SteSUPERTEX INC Typical Performance Curves Output Characteristics 20 16 G 2 oc ut a = < 8 2 4 0 0 10 20 30 40 50 Vps (VOLTS) Transconductance Vs. Drain Current 5 VDS =25V 4 _ Ty = 55C 2 3 s 28C w g wn 2 BR oO 1 Qo Qo 2 4 6 8 10 1p (AMPERES) Maximum Rated Safe Operating Area 100 _ 10 n Ww ir te a = =< S10 Ll BY BVDSS 01 1 10 100 4000 Pulse Condition: 300 ns, 2% dutycycle. Vos (VOLTS} O1 10 8 G6 o fat} a = = 4 a 2 0 e 2 Q a THERMAL RESISTANCE (NORMALIZED) pe Blav7329s OOOLbSb @ i T- 39-72 Saturation Characteristics ' I ' i Vas = 10V Go 2 4 6 Vps (VOLTS) Power Dissipation Vs, Case Temperature TO-3 a 78 125 150 Tc (PC) Qo 26 50 100 Thermal Response Characteristics T0-220 Te = 28C Pp = 45W 10 01 A 1 tp (SECONDS) -001SUPERTEX INC Ip (AMPERES) BVpss (NORMALIZED) Cc {(PICOFARADS) BVDSS Variation with Temperature Ol pe Barzaes OOO1bS? 4 i T-39-/3 ON-Resistance Vs. Drain Current a = zr 92 2 9 8 ac 50 0 50 100 150 0 4 8 12 16 20 Ts Pe) Ips (AMPERES) Transfer Characteristics V(th) and RDS Variation with Temperature Vps = 25V Ty =-55C 25) g 7 N a t 125 z 3 = a o > 0 2 4 6 8 10 50 0 50 100 150 Vas (VOLTS) Ty Fc) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 1000 f = MHz 1350pF Vps =1 1420pF 750 K ciss p 500 3 \ 2 o > 250 iW | T-coss CG 0 RSS Qo 10 20 30 40 Qo 4 8 12 16 20 Vps (VOLTS) Qc (NANOCOULOMBS) 8-88 ce ee ee eee nm ae a VN12C RDS(ON) (NORMALIZED)