MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Emitter Reverse Voltage VB2E 30 V
Interbase Voltage VB2B1 35 V
RMS Emitter Current Ie 50 mA
Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie 2.0 A
RMS Power Dissipation PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2646 2N2647
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
V
B2B1=10V 0.56 0.75 0.68 0.82
RBB V
B2B1=3.0V 4.7 9.1 4.7 9.1 kΩ
IEB2O V
B2E=30V - 12 - 0.2 μA
IV V
B2B1=20V, RB2=100Ω 4.0 - 8.0 18 mA
IP V
B2B1=25V - 5.0 - 2.0 μA
VOB1 V
1=20V 3.0 - 6.0 - V
2N2646
2N2647
SILICON
PN UNIJUNCTION TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2646 and
2N2647 devices are silicon PN Unijunction Transistors
designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
R1 (2-December 2013)
www.centralsemi.com
2N2646
2N2647
SILICON
PN UNIJUNCTION TRANSISTORS
TO-18 (UJT) CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base 1
3) Base 2
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (2-December 2013)
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