DISCRETE SEMICONDUCTORS DAWA SlAlleler 1PS75SB45 schoittky barrier double diode Product specification Supersedes data of 1997 Nov 07 VT 1999 Apr 26 PHILIPSPhilips Semiconductors meee ee ee ee 1PS75SB45 Schottky barrier double diode Product specification FEATURES e Low forward voltage Ultra smal APPLICATIONS Ultra high- Voltage clamping Protection Guard ring protected Low diode capacitance. Blocking diodes. DESCRIPTION Planar Schottky barrier double diode encapsulated in a SOT416 (SC75) ultra small plastic SMD package. | plastic SMD package speed switching circuits Marking code: 45. H3 Top view MAM377 Fig.1 Simplified outline SOT416; (SC75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. | MAX. | UNIT Per diode VA continuous reverse voltage - 40 Vv IF continuous forward current - 120 mA IFRM repetitive peak forward current tp<1s; 650.5 - 120 mA lFsm non-repetitive peak forward current tp < 10 ms - 200 mA Tstg storage temperature 65 +150 |C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 |C 1999 Apr 26Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode Ve continuous forward voltage see Fig.2 le=1mA 380 mV lp=10mA 500 mV Ip =40 mA 1 V IR continuous reverse current Va = 30 V; note 1; see Fig.3 1 HA Vr = 40 V; note 1; see Fig.3 10 HA T charge carrier life time lr = 5 mA; Krakauer method 100 ps Cy diode capacitance Va =0;f=1 MHz; see Fig.5 5 pF Note 1. Pulse test: tp = 300 us; 6 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient | note 1 833 K/W Note 1. Refer to SC75 standard mounting conditions. 1999 Apr 26 3Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 GRAPHICAL DATA MLC361 - 1 10? IF (mA) 10 Fig.2 Forward current as a function of forward voltage; typical values. MLC362 1071 10-2 (1) Tamp = 150 C. (2) Tamb = 85C. (3) Tam = 25C. Fig.3 Reverse current as a function of reverse voltage; typical values. MLC364 108 "diff (Q) f= 10 kHz. Fig.4_ Differential forward resistance as a function of forward current; typical values. MLC363 f= 1 MHz; Tamb = 25 C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1999 Apr 26Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 0 >i] | I I | I [=lv @IA He >| L 3 el Y a \ Q oe ee | _ ne | A AY ' _ y t | 1 lo detail X 0 0.5 1mm bLeriit iii it scale DIMENSIONS (mm are the original dimensions) A Aq UNIT max bp c D E e e, He Lo Q v w 0.95 0.30 | 025 | 18 | 09 1.75 | 0.45 | 0.23 mm | o0] ' |o1s | 010} 14 | o7 | 4 95 | 445 | 0.15 | 013 | %% | 2 REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SOT416 SC-75 ae 97-02-28 1999 Apr 26 5Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 26 6Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 NOTES 1999 Apr 26 7Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp8 Philips Semiconductors Date of release: 1999 Apr 26 Document order number: 9397 750 05791 pet PHILIPS Lede