SILICON TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2$D1899-Z is designed for Audio Frequency Amplifier and Switching, especiatly in Hybrid Integrated Circuits. FEATURES High hre hre= 100 to 400 Low Veeiset) Veeises = 0.3 V QUALITY GRADE Standard Please referto Quality grade on NEC Semiconductor Devices {Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Veso 60 v Collector to Emitter Voltage Vceo 60 Vv Emitter to Base Voltage Veo 7.0 Vv Coltector Current (DC) Ic 3.0 A Collector Current (Pulse) Ic* 5.0 A Base Current (DC} Is 0.5 A Total Power Dissipation (Ts = 25 C) Pritt 2.9 Ww Total Power Dissipation (Te = 25 C} Pr2 10 Ww Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C * PW 10 ms, Duty Cycle 3 50 % ** Mounted on ceramic substrate of 7.5 cm? x 0.7 mm PACKAGE DIMENSIONS (in millimeters) 6.$20.2 2.320.2 5.0+0.2 | 1a} 10.520.1 seeaf] [pase . Z " / Byte Zz al = le ilas S| Lt ys A 2 fay | <4 wa ere 7 zt i at 31 | og Ye o * MAX, o! 1,440.2 0.9 MAX. 08 poze Now 1. Base 2. Collector 3. Emitter 4. Collector Document No. TC-18184 (0.0. No, TC-6082) Date Published December 1993 M Printed in Japan NEC Corporation 198 419NEC 2SD1899-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATI AMBIENT TEMPERATURE Pi - Total Power Dissipation - W mM Substra te 0 50 100 ON vs. 150 200 Ya ~ Ambient Ternperature ~ C 420 CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Coltector Cutoff Current lego 190 BA Vee = GOV fr= GO Emitter Cutoff Current fepo 40 LA Veo = 7.0 V, oe DC Current Gain ~ hrer* 60 Vee = 2.0 V,l0= 092A DC Current Gain hre2* 100 400 Vera 2.0V, ic = DGA DC Current Gain hrea* 50 Vee.= 2.0 V, lox 2.0A Collector Saturation Voltage Veckisan 0.14 0.25 Vv lc=15A, le = O15 4 Base Saturation Voltage Vacisa* 0.93 V2 Vv lc= TBA fe = G.ISA Gain Bandwidth Product fr 120 MHz Vee = 5.0V. le=~L5A 7 Output Capacitance Cob 30 \ pF Vea= 10V, t= 9. f= 1.0 MHz Turn-on Time ten 0.15 0.5 L us lox TAVcc = 10 V.Ris 100 Storage Time tstg 0.75 2.0 us inva tere OTA Fall Time t 0.2 0.5 us * Pulsed: PW S$ 350 us, Duty Cycle $ 2% hee Classification MARKING M L K hrez 700 to 200 | 160 to 326 | 200 to 400 FORWARD BIAS SAFE OPERATING AREA 10 5.0 1.0 05 urrant A c 0.1 0.05 Collector ' 2 Tos 26C Single Puise 6.01 1.0 2.0 5.0 10 20 60 700 Vee - Collector to Emitter Voltage -VNEC dT ~ Percentage of Rated Current - % A le - Collector Current tc - Collector Current - A DERATING CURVE OF SAFE OPERATING AREA <i Wy 2, on % 50 100 150 2 73 - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 mA 90 80 mA 4 08 1 1.6 2. Vez ~ Collector to Ernitter Vaitage - V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Veex 2.0V Ta = 125C 92 #04 06 08 10 12 14 Ver - Base to Emitter Voltage - V 00 0 1.6 ctor Current A <f i 8 5 o 5 a oS 3 Oo t ad hee DC Current Gain 28SD1899-Z REVERSE BIAS SAFE OPERATING AREA L = 180 wk oO 20 4D 60 ao 106 Vce ~ Collector to Emitter Voltage -- V COLLECTOR CURRENT v: COLLECTOR TO EMITTER VOLTAGE Pr=1OW f cad 9 gone on 30 a 10 20 30 40 50 Vce - Collector to Emitter Voitage DC CURRENT GAIN vs. COLLECTOR CURRENT ces 2.0 Ty = 125 Pulsed 10 0.01 0.05 0.4 0.5 1.0 5.0 10 ic - Cailector Current - A 42!NEC 2SD1899-Z 422 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 = 10 . Pulsed 5.0 Ts = 125C | Vetisan 75 25 Ta = 125 C Cc 0.1 0.05 Vcetsai - Collector Saturation Voltage V Votisan Base Saturation Voltage V 0.01 0.01 0.02 0.069.102 9051020 5.0 10 Ic - Collector Current A GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1 000 Vee = 5.0V 500 200 100 50 20 fr - Gain Bandwidth Product - MHz 10 0.010.02 0.050102 05 1020 50 10 tc ~ Collector Current ~ A ten - Turn-On Time ys {stg Storage Time ys Fall Time ys FALL, STORAGE AND TURN ON TIME vs. COLLECTOR CURRENT Vee= 10 V le= 10- ts: =-10 te 0. 0.02 0.01 0.1 0.2 05 #10 20 B39 10 ic ~ Collector Current - A OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 7 000 le= Me f= 1.0 MH 500 oe QO % 200 S oO 100 3 a 5 50 } i 2 O 20 10 1000-20 5.0 10 20 60 100 Vce Collector to Base Voltage V