AOT10N60/AOB10N60/AOTF10N60
600V,10A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 10A
R
DS(ON)
(at V
GS
=10V) < 0.75Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT10N60L & AOTF10N60L & AOB10N60L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
2 0.4
5
A
W
W/
o
C
°C
mJ
V/ns
°C
Maximum Case-to-sink
A
Maximum Junction-to-Case
mJ
°C/W
°C/W
Derate above 25
o
C
Parameter AOT10N60/AOB10N60 AOTF10N60
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
The AOT10N60 & AOB10N60 & AOTF10N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
700V@150℃
Drain-Source Voltage 600
AOT10N60/AOB10N60
V±30Gate-Source Voltage
T
C
=100°C A
36Pulsed Drain Current
C
Continuous Drain
Current T
C
=25°C I
D
Avalanche Current
C
290
Single plused avalanche energy
G
580
4.4
Repetitive avalanche energy
C
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A,D
Power Dissipation
B
P
D
T
C
=25°C
Thermal Characteristics 300
-55 to 150
250 50
0.5 --
Units
°C/W65
0.5 65
2.5
AOTF10N60
10 10*
7.2 7.2*
G
D
S
AOTF10N60
TO-263
D
2
PAK
S
G
Top View
TO-220FTO-220
AOT10N60 AOB10N60
D
GD
S
G
D
S
Rev7: Jul 2011 www.aosmd.com Page 1 of 6
AOT10N60/AOB10N60/AOTF10N60
Symbol Min Typ Max Units
600 700
BV
DSS
/
∆TJ
0.65 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3 4 4.5 V
R
DS(ON)
0.6 0.75 Ω
g
FS
15 S
V
SD
0.73 1 V
I
S
Maximum Body-Diode Continuous Current 10 A
I
SM
36 A
C
iss
1100 1320 1600 pF
C
oss
105 130 160 pF
C
rss
7.5 9.3 11 pF
R
g
3 3.8 6 Ω
Q
g
31 40 nC
Q
gs
6 10 nC
Q
gd
14.4 20 nC
t
D(on)
28 35 ns
t
r
66 80 ns
t
D(off)
76 95 ns
t
f
64 80 ns
t
rr
290 350 ns
Q
rr
3.9 4.7 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance V
GS
=10V, I
D
=5A
Reverse Transfer Capacitance
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=5A
Forward Transconductance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
V
DS
=5V
I
D
=250µA
V
DS
=480V, T
J
=125°C
Zero Gate Voltage Drain Current
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
ID=250µA, VGS=0V
Diode Forward Voltage
Turn-Off DelayTime V
GS
=10V, V
DS
=300V, I
D
=10A,
R
G
=25Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V
GS
=10V, V
DS
=480V, I
D
=10A
Gate Source Charge
Gate Drain Charge
BV
DSS
Body Diode Reverse Recovery Charge I
F
=10A,dI/dt=100A/µs,V
DS
=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=4.4A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev7: Jul 2011 www.aosmd.com Page 2 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0
4
8
12
16
20
0 5 10 15 20 25 30
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=5.5V
6V
10V
6.5V
0.1
1
10
100
2 4 6 8 10
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
-55°C
V
DS
=40V
25°C
125°C
0.4
0.6
0.8
1.0
1.2
1.4
0 4 8 12 16 20 24
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(ON)
(Ω
Ω
Ω
Ω)
V
GS
=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
V
GS
=10V
I
D
=5A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
T
J
(°C)
Figure 5:Break Down vs. Junction Temparature
BV
DSS
(Normalized)
Rev7: Jul 2011 www.aosmd.com Page 3 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 10 20 30 40 50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
V
DS
=480V
I
D
=10A
1
10
100
1000
10000
0.1 1 10 100
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT10N60/AOB10N60 (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
0.01
0.1
1
10
100
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF10N60 (Note F)
10
µ
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100µs
1s
0
2
4
6
8
10
12
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 11: Current De-rating (Note B)
Current rating I
D
(A)
Rev7: Jul 2011 www.aosmd.com Page 4 of 6
AOT10N60/AOB10N60/AOTF10N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT10N60/AOB10N60 (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
on
T
P
D
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF10N60 (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev7: Jul 2011 www.aosmd.com Page 5 of 6
AOT10N60/AOB10N60/AOTF10N60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev7: Jul 2011 www.aosmd.com Page 6 of 6