CBR50-020P SERIES
SILICON BRIDGE RECTIFIERS
50 AMP, 200 THRU 1000 VOLT DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR50-020P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) CBR50
SYMBOL -020P -040P -060P -080P -100P UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V
DC Blocking Voltage VR 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V
Average Forward Current (TC=55°C) IO 50 A
Peak Forward Surge Current IFSM 400 A
RMS Isolation Voltage (case to lead) Viso 2500 Vac
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.5 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR V
R=Rated VRRM, TC=25°C 5.0 μA
IR V
R=Rated VRRM, TC=125°C 500 μA
VF I
F=25A 1.1 V
CJ V
R=4.0V, f=1.0MHz 300 pF
CASE FP
R1 (24-June 2013)
www.centralsemi.com
CBR50-020P SERIES
SILICON BRIDGE RECTIFIERS
50 AMP, 200 THRU 1000 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (24-June 2013)
