Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright 2000
MSC1683.PDF 2001-02-21
WWW.Microsemi .COM
MS2091
RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MS2091 is an internally-matched, common base silicon bipolar
device optimized pulsed application in the 600 – 750 MHz frequency
range.
Housed in the industry standard AMPAC metal/ceramic package,
this device uses a refractory/gold overlay die geometry for ruggedness
and long-term reliability.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
Refractory/Gold
Metallization
Internal Input Matching
Metal/Ceramic Hermetic
Package
POUT = 220 W Min.
GP = 8.7 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
Avionics Applications
* Applies only to rated RF amplifier operation
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°
°°
°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 75°C) 875 W
IC Device Current* 16.0 A
VCC Collector-Supply Voltage* 55 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature -65 to +200 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 0.20 °C/W
M
MS
S2
20
09
91
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