SILICON NPN TRANSISTOR 2N6235R * Hermetic TO66 Metal Package * Designed For Driver Circuits, Switching and Amplifier Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current Tc = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 275V 275V 6V 5A 2A 50W 0.286W/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 3.5 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 8823 Issue PRELIM SILICON NPN TRANSISTOR 2N6235R ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions ICEO Collector-Emitter Cut-Off Current Collector-Emitter Cut-Off Current VCE = 275V IB = 0 1.0 VCE = 275V VBE = -1.5V TC = 150C 1.0 Emitter-Base Cut-Off Current Collector-Base Cut-Off Current Base-Emitter Voltage VEB = 6V IC = 0 0.1 VCB = 275V IE = 0 0.1 IC = 1.0A IC = 1.0A VCE = 5V IB = 100mA 1.0 Base-Emitter Saturated Voltage IC = 5A IC = 1.0A IC = 5A IB = 1.0A IB = 100mA IB = 1.0A IC = 0.1A IC = 1.0A VCE = 5V VCE = 5V 25 Forward-current transfer ratio IC = 3A VCE = 5V 10 ICEX IEBO ICBO VBE (on) 1 VCE(sat) 1 VBE(sat) 1 hFE 1 Collector-Emitter Saturation Voltage Min. Typ. Max. Units mA 0.5 2.5 V 1.0 2 25 125 DYNAMIC CHARACTERISTICS fT 2 Current-Gain Bandwidth Product Cobo Output Capacitance IC = 250mA VCE = 10V f = 10MHz IE = 0 20 VCB = 10V f = 0.1MHz MHz 250 pF SWITCHING CHARACTERISTICS 1 2 IC = 1.0A IB = 0.1A VCC = 200V Storage Time IC = 1.0A VCC = 200V Fall Time IB1 = IB2 = 0.1A tr Rise Time ts tf 0.5 3.5 s 0.5 Pulse Test: tp = 300us, 2% fT = | hfe | x ftest Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 8823 Issue PRELIM SILICON NPN TRANSISTOR 2N6235R Mechanical Data Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) 3.68 (0.145) rad. max. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO-213AA) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 8823 Issue PRELIM