SILICON
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8823
Issue PRELIM
2N6235R
• Hermetic TO66 Metal Package
• Designed For Driver Circuits, Switching
and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector - Base Voltage 275V
VCEO Collector - Emitter Voltage 275V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 5A
IB Base Current 2A
PD Total Power Dissipation at Tc = 25°C 50W
Derate Above 25°C 0.286W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters Min. Typ. Max.
Units
RθJC Thermal Resistance, Junction To Case 3.5 °C/W
SILICON
NPN TRANSISTOR
2N6235R
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8823
Issue PRELIM
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ.
Max.
Units
ICEO Collector-Emitter Cut-Off
Current VCE = 275V IB = 0 1.0
VBE = -1.5V
ICEX Collector-Emitter Cut-Off
Current VCE = 275V TC = 150°C 1.0
IEBO Emitter-Base Cut-Off
Current VEB = 6V IC = 0 0.1
ICBO Collector-Base Cut-Off
Current VCB = 275V IE = 0 0.1
mA
VBE (on)
1
Base-Emitter Voltage IC = 1.0A VCE = 5V 1.0
IC = 1.0A IB = 100mA 0.5
VCE(sat)
1
Collector-Emitter
Saturation Voltage IC = 5A IB = 1.0A 2.5
IC = 1.0A IB = 100mA 1.0
VBE(sat)
1
Base-Emitter Saturated
Voltage IC = 5A IB = 1.0A 2
V
IC = 0.1A VCE = 5V 25
IC = 1.0A VCE = 5V 25 125
hFE
1
Forward-current transfer
ratio
IC = 3A VCE = 5V 10
DYNAMIC CHARACTERISTICS
IC = 250mA VCE = 10V
fT
2
Current-Gain Bandwidth
Product f = 10MHz 20 MHz
IE = 0 VCB = 10V
Cobo Output Capacitance f = 0.1MHz 250 pF
SWITCHING CHARACTERISTICS
IC = 1.0A VCC = 200V
tr Rise Time IB = 0.1A 0.5
ts Storage Time 3.5
IC = 1.0A VCC = 200V
tf Fall Time IB1 = IB2 = 0.1A 0.5
µs
1
Pulse Test: tp = 300us, δ ≤ 2%
2
fT
= |
hfe
|
x
f
test
SILICON
NPN TRANSISTOR
2N6235R
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8823
Issue PRELIM
Mechanical Data
Dimensions in mm (inches)
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
12
TO66 (TO
-
213AA)
Pin 1 - Base Pin 2 - Emitter Case - Collector
