HARRIS SEMICONOUCTOR a June 1994 HA-5102/883 Dual, Low Noise, High Performance Operational Amplifier Features This Circuit Is Processed in Accordance to MIL-STD- 883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. Low input Noise Voltage Density at 1kHz.. 6nV/AV/Hz (Max) Description Low noise and high performance are key words describing the unity gain stable HA-5102/883. This general purpose dual amplifier offers an array of dynamic specifications including 1V/us slew rate (min), Ayo, 2 1, and 8MHz band- VW out [5 | Ve ant [3] 1 Dn +IN1 a 2 rs] an2 4 5 | +1N2 width (typ). Complementing these outstanding parameters is 4.anviiz (Typ) a very low noise specification of 4.3nV/VHz at 1kHz (typ), High Slew Rate.............. pees e+ 1V/is (Min) 6nV/VHz (max). 3V/us us (Typ) Fabricated using the Harris standard high frequency D.I. pro- * Unity Gain Bandwidth ................. 8MHz(Typ) cass, these operational amplifiers also offer excellent input * High Open Loop Gain (Full Temp) ..... 100kV/V (Min) Specifications such as 2.5mV (max) offset voitage and 75nA 250kV/V (Typ) (max) offset current. Complementing these specifications are 100dB (min) open loop gain and 60dB channel separa- High CMRR, PSRR (Full Temp)....... ++ -860B (Min) tion (min). Economically, the HA-5102/883 also consumes a 100dB (Typ) very moderate amount of supply power 180mW/ package. 4 qn * Low Offset Voltage Drift .............. 3uV/C (Typ) This impressive combination of features make this amplifier z & * No Crossover Distortion ideally suited for designs ranging from audio amplifiers and Ei active filters to the most demanding signal conditioning and qa Standard Dual Pinout instrumentation circuits. & = oa < Applications : : PP Ordering Information High Quality Audio Preamplifiers PART TEMPERATURE * High Q Active Filters NUMBER RANGE PACKAGE Low Noise Function Generators HA2-5102/883 | -55C to+125C =| 8 Pin Can * Low Distortion Oscillators HA4-5102/883 -55C to +125C 20 Lead Ceramic LCC * Low Noise Comparators HA7-5102/883 -65C to +125C 8 Lead CerDIP Pinouts HA-5102/883 HA-5102/883 HA-5102/883 (CERDIP) (CLCC) (METAL CAN) TOP VIEW TOP VIEW TOP VIEW CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright Harris Corporation 1994 3-109 Spec Number 511019-883 File Number 3709Specifications HA-5102/883 Absolute Maximum Ratings Therma! Information Voltage Between V+ and V- Terminals................-685 40V Thermal Resistance Bia Bic Differential Input Voltage... 6... eee ee eee eee eee 7V CerDIP Package ......... 2... eee 115C/W .2BC/W Voltage at Either Input Terminal ................ 00000 V+ to V- Ceramic LCC Package .............. 65C/W 15CAW Peak Output Currant .... 2... cece eee Indefinite Metal Can Package ...........--.05. 155C/W67C/W (One Amplifier Shorted to Ground) Package Power Dissipation Limit at +75C for Ty s +175C Junction Temperature (Ty)... ee +175C CerDIP Package ....... 2... cee ee eee cece ee ete 870mW Storage Temperature Range ................. -65C to +150C Ceramic LCC Package ........---00. see cece eee 1.54W ESD Rating. ........ 0... c cece cece eee eee e eens <2000V Matal Can Packag@..........0se eee er reece eens 645mW Lead Temperature (Soldering 10s)........... 0.00000 +300C Package Power Dissipation Derating Factor Above +75C CorDIP Package 2.0... ccc eee cece eee ee teee 8.7mMWPC Ceramic LCC Package ........- 0. ccc cee eens 15.4mW/C Metal Can Package .......... 0. cee eee eee eras 6.5mWPC CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range. .............0. 55C to +125C Vine S 1/2 (V+ - V-) Operating Supply Voltage..... 22... eee ee eee +6Vtoti5V RL 22kQ TABLE 1. OC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Vgyppyy = 15V, Rgource = 1002, Rigap = 500kQ, Vout = OV, Unless Otherwise Specified. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS Input Offset Voltage Vio Vow = OV 1 +25C -2.0 2.0 mv 2,3 +125C, -55C 2.5 2.5 mv Input Bias Current +g Vom = OV, 1 +26C -200 200 nA Fee 1000. 2,3 +125C, 65C | -325 | 325 nA lg Vom = OV, 1 +25C -200 200 nA Fee oka 2,3 +126C, 55C | -325 | 325 nA Input Offset Current lo Vom = OV, 1 +25C -75 75 nA ee ona 2,3 +125C, 65C | -125 | 125 | nA Common Mode Range +CMR V+=43V, V- =-27V 1 +25C +12 - Vv 2,3 +125C, -55C +12 . -CMR V+ = +27V, V-=-3V 1 +25C . +12 v 2,3 +125C, -55C : 12 v Large Signal Voltage +AVoL Vout = OV and +10V, 4 +25C 100 - kVIV Gain Fu = 2ko 5,6 +125C, 55C | 100 - KV Ayo. | Vour = OV and -10V, 4 +25C 100 - kVV P= 2k 5,6 +125C, 65C | 100 . kV Common Mode +CMRR_ | AVoy = +5V, 1 425C 86 : dB Rejection Ratio von *10N. V- = -20V, 2.3 125C, -55C 86 7 de -CMAR | AVcy = -5V, 1 425C 86 : dB vn ON = ON. 2,3 +128C, -65C | 86 - dB Spec Number 511019-883 3-110Specifications HA-5102/883 TABLE 1. OC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: Veyppry = t15V, Rgource = 1002, Rioap = 500kKQ, Voyr = OV, Unlass Otherwise Specified. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS Output Voltage Swing +VouT: | RU = 2kaQ 1 +25C 10 - v 2,3 +125C, -55C 10 - v Vout: | AL = 2kQ 1 +25C : 10 v 2,3 +125C, -55C - -10 Vv +Voutz | Ry = 10ka 1 +25C 12 : Vv 2,3 +125C, -55C 12 - v Voute | Ry 2 10ka 1 +25C - 12 Vv 2,3 +125C, -55C : -12 v Output Current tout Vout = -5V 1 +25C. 10 : mA 2,3 +125C, -55C 10 : mA lour | Vout = +5V 1 +25C - -10 mA 2,3 +125C, -55C : -10 mA 2 o Guiescent Power Supply tec Vout = OV, lgut = OMA 1 +25C : 5.0 mA 3 rf 2,3 +125C, -55C - 6.0 mA E = loc Vour = OV, Ioyr = OMA 1 +25C -5.0 - mA & & 2,3 +125C, -55C | -6.0 - mA 3< Power Supply +PSRA | AVsup = 10V, 1 +25C 86 - dB Rejection Ratio vie Ooy We ctey 2,3 +125C, -55C | 86 : dB -PSAR | AVgyp = 10V, 1 +25C 86 - dB Van tev v2 20V 2,3 +128C, 55C | 86 . aB TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Vsypp_y = +15V, Rsource = 502, Riogp = 2kQ, Croan = SOpF, Ayo, = +1V/V, Unless Otherwise Specified. LIMITS GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS Stew Rate +SR Vout = -3V to +3V 4 +25C 1 - Vius -SR Vour = +8V to -3V 4 +25C 1 - V/s Rise and Fall Time Tr Vour = 0 to +200mVv 4 425C - 200 ns 10% < Th < 90% Te Vout = 0 to -200mV 4 +25C - 200 ns 10% < Tp s 90% Overshoot +0S Vout = 0 to +200mV 4 +25C - 35 % OS | Voy = 0 to -200mv 4 +25C - 35 % Spec Number 511019-883 3-111Specifications HA-5102/883 TASLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: Vguppry = 15V, Rloap = 2k9, Cioap = 5OpF, Ayo, = 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Differential Input Rin Vom = OV 1 +25C 250 - kQ Resistance Input Noise Voltage En Ags = 209, 1 +25C - 6 nvz Density fg = 1000Hz Input Noise Current le Rs = 2MQ, 1 +25C - 3 paz Density fo = 1000Hz Full Power FPBW | Vpecax = 10V 1,2 +25C 16 - kHz Bandwidth Minimum Closed Loop CLSG AL = 2kQ, C, = 50pF 1 -55C to +125C +1 - VN Stable Gain Output Resistance Rout Open Loop 1 +25C - 360 2 Quiescent Power PC Vout = OV, lout = OMA 1,3 -55C to +125C - 180 mw Consumption Channel Separation cs Rg = 1kQ, 1 +25C 60 : dB Avot = 100VV, Vin = 100MV pga, at 10kHz Referred to input NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param- eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slaw Rate measurement using FPBW = Slew Rate/(2nVpeax). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.). TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-in) 1 Final Electrical Test Parameters 1 (Note 1), 2,3, 4,5,6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 511019-883 3-112HA-5102/883 Die Characteristics DIE DIMENSIONS: 98.4 x67.3x19 mils +1 mils 2500 x 1710 x 483m + 25.4um METALLIZATION: Type: Al, 1% Cu Thickness: 16kA + 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kA + 2kA Nitride Thickness: 3.5kA + 1.5kA WORST CASE CURRENT DENSITY: 1.43 x 105A/cm? at 10mA SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: 93 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout v- +INt HA-5102/883 -iN1 ouT1 ag terete (5), Ett tt++ +IN2 -AN2 OuT2 3-113 Spec Number 511019-883 OPERATIONAL AMPLIFIERS