SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 ✪
COMPLEMENTA RY TYPE – BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
PARTMARKING DETAILS –
BCX51 – AA BCX52 – AE BCX53 – AH
BCX51-10– AC BCX52-10– AG BCX53-10– AK
BCX51-16– AD BCX52-16– AM BCX53-16– AL
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL BCX51 BCX52 BCX53 UNIT
Collector-Base Voltage VCBO -45 -60 -100 V
Collector-Emitter Voltage VCEO -45 -60 -80 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -1.5 A
Continuous Co llector Current IC-1 A
Power Dissipa tion at Tamb=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base BCX53
Breakdown BCX52
Voltage BCX51
V(BR)CBO -100
-60
-45
V
V
V
IC =-100µA
IC =-100µA
IC =-100µA
Collector-Emitter BCX53
Breakdown BCX52
Voltage BCX51
V(BR)CEO -80
-60
-45
VI
C =-10mA*
IC =-10mA*
IC =-10mA*
Emitter-Base
Breakdown Vo ltage V(BR)EBO -5 V IE =-10µA
Collector Cut-Off Current ICBO -0.1
-20 µA
µAVCB =-30V
VCB =-30V, Tamb =150°C
Emitter Cut-Off Current IEBO -20 nA VEB =-4V
Collector-Emitter
Saturation Voltage VCE(sat) -0.5 V IC =-500mA, IB =-50mA*
Base-Emitter
Turn-On Voltag e VBE(on) -1.0 V IC =-500mA, VCE =-2V*
Static Forward Current
Transfer Ratio hFE
-10
-16
25
40
25
63
100
250
160
250
IC =-5mA, VCE =-2V*
IC =-150mA, VCE =-2V*
IC =-500mA, VCE =-2V*
IC =-150mA, VCE =-2V*
IC =-150mA, VCE =-2V*
Transition Fre quency fT150 MHz IC =-50mA, VCE =-10V,
f=100MHz
Output Capacita nce Cobo 25 pF VCB =-10V, f=1MHz
*Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCX51
BCX52
BCX53
C
C
B
E
SOT89
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