Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
Description
DA WIN ’ S I G B T 7DM-3 Package dev ices are opt imized t o reduce losses
and swit ching noise in high f requency power conditioning electr ica l sy st ems.
These I G BT modules are ideally suited for power inverters, motors drives
and ot her applications w here swit ching losses are s ignif icant portion of the
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduct ion Loss : VCE(sat) = 2.1 V (ty p.)
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min. 10uS at TC=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power Inverters, Welding Machine, I nduction He ating,
UP S , CVC F, R obot ics , Servo Cont rols, High Speed SMP S
Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equiv alent Circu it
E qu ival en t Ci r cuit and Packag e
Package : 7DM-3 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
C o llec tor-E mitt e r V o lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Maximum Lead Temp. for soldering
Purposes, 1/8”f rom case f or 9 seconds
Mount ing screw Torque :M6
Power terminals screw Torque :M6
600
±20
375
300
600
300
600
10
892
-40 ~ 150
-40 ~ 125
2500
260
4.0
4.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
-
-
Tc = 25℃
Tc = 80℃
-
Tc = 80℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
High Power Lugge d Type IGBT Module
6
7
5
4
①②③
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Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E B reakdown V oltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Colle ctor cutoff Current
G - E leakage Current
Colle ctor to Emitter
sat uration v oltage
Turn on delay time
Tu rn o n ris e time
Turn off delay tim e
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
6.5
-
-
2.1
2.4
140
150
180
140
8.5
15
23.5
-
990
210
350
-
-
8.5
250
±100
2.9
-
-
-
-
240
-
-
-
-
-
-
-
V
V/℃
V
uA
nA
V
V
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 250uA
VGE = 0V , IC= 1.0m A
IC= 300mA , VCE = VGE
IC=300A, VGE=15V @TC= 25 ℃
IC=300A, VGE=15V @TC=100℃
IC=300A, VGE=15V @TC= 25 ℃
IC=300A, VGE=15V @TC=100℃
VCC = 300V , IC=300A
VGE = ±15V
RG= 2.1 Ω
I nduct iv e Load, @ TC= 2 5 ℃
VCC = 300V, VGE = ±15V
@TC= 100℃
VCC = 300V
VGE =±15V
IC= 300A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
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Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=300A
IF= 300A, VR=300V
di/ dt= -200A/ uS
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.8
1.9
120
140
40
47
-
-
2.2
-
140
-
45
-
-
-
V
nS
A
nC
Th ermal Character i stics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)
Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
RθJC
RθJC
RθCS
Weight
0.14
0.24
-
360
-
-
0.035
-
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Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
0
5
10
15
20
0 5 10 15 20
0
4
8
12
16
20
0 5 10 15 20
0
100
200
300
400
500
600
012 345
0
100
200
300
400
500
600
012345
0
100
200
300
400
500
600
012345
0
100
200
300
400
500
600
0. 1 1 10 100
P erfor m an ce Cur ves
C ommon E mitte r
TC=25℃20V 15V
C ommon E mitte r
TC=125℃
TC=125℃
TC=25℃
Du ty cycle = 5 0%
TC=125℃
Power Dissipation = 400W
12V
VGE=10V
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Frequen cy [KHz]
Load Cu r r ent [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage
characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
20V 15V 12V
VGE=10V
C ommon E mitte r
TC=25℃C ommon E mitte r
TC=125℃
400A
300A
IC=200A 400A
IC=200A
300A
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
Collect or – Emitt er Voltage, VCE [V]
Gate – Emitter Voltage, VGE [V]
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Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
0.001
0.01
0. 1
1
1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00
Ga te C ha rg e, Qg [nC ]
Gate – Emitter Voltage, VGE [V]
Rectangular Pulse Du ration Time [sec]
Fig 7. Capacitance characteristics Fig 8. Transient Thermal Impedance
IGBT :
DIODE :
TC=25℃
0
3
6
9
12
15
0 2 00 4 00 600 800 1000 120 0
C ommon E mitte r
IC=300A
TC=25℃
VCC=300V
1
10
100
1000
0 100 200 300 400 500 600 700
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
0
500
1000
1500
2000
2500
3000
3500
0 100 200 300 4 00 500 600 700
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Fig 9. RBSOA characteristics Fig 10. SCSOA characteristics
Fig12. rated Current vs. Case Temperature
Case Temperature, Tc [ ℃]
C o lle c to r C u rrent , Ic [A ]
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100 120 140 160
TJ≤150℃
VGE ≥15V
Fig 11. SOA Characteristic
Collect or-Emit t er Voltage, VCE [V]
0.1
1
10
100
1000
0.1 1 10 100 1000
Ic MAX. (Pulsed)
Ic MAX. (Continuous )
Single N on-re petitive
Pulse Tc = 25℃
Curves must be derated
linerarly with increase
In temperature
DC Oper at ion
1ms
100us
50us
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Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
Fig 13 . Power Dissipation
vs. Case Temperature
Tc [ ℃]
PD[ W ]
0
200
400
600
800
1 000
0 20 40 60 80 100 12 0 140 160
TJ≤150℃
PD= f(Tc)
Fig 14. Forward characteristics
Forwar d Drop Voltage, VF[V]
F orwa rd C urrent, IF[A]
0
200
400
600
01234
TC=125℃
TC=25℃
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Copyright @ Dawin Electronics Corp. A ll r ight reserved
May. 2009 DM2G300SH6N
P ackage Ou t L ine In for mati o n
7DM-3
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