VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS 0100W120000 * * * * * Doc. No. 5SYA1511-00 May. 01 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package UL File no. E63532 Maximum Rated Values (Tvj = 25C, unless specified otherwise) Parameter Symbol Collector-Emitter Voltage VCES VGE shorted 1200 V DC Collector Current IC Ths = 60C 100 A Peak Collector Current ICM Pulse: tp=1ms, Ths = 60C 200 A 20 V 450 W 100 A 200 A Gate Emitter Voltage VGES Total Power Dissipation Ptot Conditions Ths = 25C per switch Values Unit IC = 200 A, VCEM = 1200 V, VCC = 1000 V, IGBT Switching SOA SwSOA VGE = 15 V, Tvj =125C voltages measured on auxiliary terminals IGBT Short Circuit SOA SCSOA DC Forward Current IF Peak Forward Current IFM VCC = 900 V, VCEM = 1200 V, tp = 10 s, VGE = 15 V, Tvj =125 C Pulse: tp = 1ms, Ths = 60C ABB Semiconductors AG reserves the right to change specifications without notice. 5SNS 0100W120000 Maximum Rated Values (cont.) Parameter (Tvj = 25C, unless specified otherwise) Symbol Conditions Values Unit Junction Temperature Tvj - 40 ~ 150 C Storage Temperature Ttstg/Tcop - 40 ~ 125 C 2500 V 3~6 Nm Isolation Voltage Mounting Viso 1 min, f = 50Hz Base to Heatsink (M5) Hole 5.5mm diameter Main Terminals Pin: 1.15*1.0 mm PCB mounting Pitch of pins : 3.81 mm Gate, Emitter Aux. Pin: 1.15*1.0 mm IGBT Characteristic Values Parameter Collector-Emitter Saturation Voltage Symbol (Tvj = 25C, unless specified otherwise) Conditions VCE(sat) IC = 100 A, VGE = 15 V min. typ. Tvj = 25 C 2.45 Tvj = 125 C 2.95 max. Unit 3.00 V V Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 V, Tvj = 125 C 8 mA Gate-Emitter leakage Current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C 500 nA 6.5 V Gate-Emitter Threshold Voltage VGE(TO) IC = 4 mA, VCE = VGE Total Gate Charge Qge Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) tf IC = 100 A, VCE = 600 V, VGE = -15 to 15 V 4.5 1000 nC 8 nF 0.7 nF 0.5 nF IC = 100 A, VCC = 600 V, Rgon = 10 , 0.075 s Tvj = 125 C, VGE = 15 V 0.065 s IC = 100 A, VCC = 600 V, Rgoff = 10 , Tvj = 125 C,VGE = 15 V 0.46 s 0.05 s VCE = 25 V, VGE = 0 V, f = 1MHz Turn-on Switching Energy Eon Rgon = 10 IC = 100 A, Tvj = 125 C, VCC = 600 V, VGE = 15 V, 13.0 mJ Turn-off Switching Energy Eoff inductive load, integrated up Rgoff = 10 to: 3% VCE (Eon), 1% IC (Eoff) 11.0 mJ Module stray Inductance Plus to Minus Ls DC 25 nH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1511-00 May. 01 2 of 8 5SNS 0100W120000 Diode Characteristic Values Parameter (Tvj = 25C, unless specified otherwise) Symbol Forward Voltage VF Reverse Recovery Current Irrm Reverse Recovery Charge Qrr Reverse Recovery Time trr Conditions IF = 100 A min. typ. max. Tvj = 25 C 2.00 Tvj = 125 C 2.00 IF = 100 A, Rgon = 10 , VCC = 600 V, VGE = 15 V, Tvj = 125 C Unit 2.45 V 85 A 19 C 0.4 s 7.5 mJ IF = 100 A, Tvj = 125 C, VCC = 600 V, Reverse Recovery Energy Erec Rgon = 10 , VGE = 15 V, inductive load, fully integrated Thermal Characteristics Parameter Symbol IGBT Thermal Resistance Junction to Heatsink Rth j-h Igbt Diode Thermal Resistance Junction to Heatsink Rth j-h Diode Equivalent IGBT Thermal Resistance Junct. to Case Rth j-c Igbt Equivalent Diode Thermal Resistance Junct. to Case Rth j-c Diode (Tj = 25C, unless specified otherwise) Conditions min. typ. max. Unit 0.280 C/W Heatsink: flatness < +/- 20 m, roughness < 6 m without ridge Thermal grease: thickness: 30 m < t < 50 m 0.560 C/W 0.180 C/W 0.360 C/W Mechanical Properties Parameter Dimensions Symbol Conditions L* W* H Typical , see outline drawing min. typ. max. Unit 121.5 * 61.5 * 20.5 mm Clearance Distance DC acc. IEC 664-1 and Term. to base: prEN50124-1:1995 Term. to term: 8.5 mm 9.5 mm Surface Creepage Distance DSC acc. IEC 664-1 and Term. to base: prEN50124-1:1995 Term. to term: 12.5 mm 15.5 mm Weight 215 gr ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1511-00 May. 01 3 of 8 5SNS 0100W120000 Electrical configuration Outline drawing ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1511-00 May. 01 4 of 8 5SNS 0100W120000 Fig. 1 Typ. Output Characteristics at Tvj=25C Fig. 2 Typ. Output Characteristics at Tvj=125C Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristics ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1511-00 May. 01 5 of 8 5SNS 0100W120000 Fig. 5 Typ. Switching Energies per pulse vs on-state current Fig. 6 Typ. Switching Energies per pulse vs gate resistor Fig. 7 Typ. Switching times vs on-state current Fig. 8 Typ. Switching times vs gate resistor ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1511-00 May. 01 6 of 8 5SNS 0100W120000 Fig. 9 Typ. IGBT Capacitances vs collectoremitter Voltage Fig. 10 Typ. Diode forward Characteristics Fig. 11 Typ. Reverse Recovery Characteristics vs forward current Fig. 12 Typ. Reverse Recovery Characteristics vs gate resistor ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1511-00 May. 01 7 of 8 5SNS 0100W120000 Fig. 13 Typ. Thermal impedance vs time ABB Semiconductors reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email Info@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1511-00 May. 01