VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 * Patented free-floating silicon technology * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Max repetitive peak reverse voltage Max non-repetitive peak reverse voltage Symbol Conditions f = 50 Hz, tp = 10 ms, VRRM Tvj = 0...150 C VRSM f = 5 Hz, tp = 10 ms, Tvj = 0...150 C Value Unit 3600 V 4000 V Characteristic values Parameter Reverse leakage current Symbol Conditions IRRM VRRM, Tvj = 150 C min typ max 400 Unit mA Parameter Mounting force Symbol Conditions FM min 81 typ 90 max 108 Unit kN Acceleration a Device unclamped 50 m/s Acceleration a Device clamped 100 m/s2 Mechanical data Maximum rated values 1) 2 Characteristic values Parameter Weight Symbol Conditions m Housing thickness H Surface creepage distance DS 56 mm Air strike distance Da 22 mm FM = 90 kN, Ta = 25 C min typ 34.3 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max 2.8 Unit kg 35 mm 5SDD 54N4000 On-state Maximum rated values 1 ) Parameter Average on-state current Symbol Conditions IF(AV)M 50 Hz, Half sine wave, TC = 85 C RMS on-state current IF(RMS) Peak non-repetitive surge current IFSM Limiting load integral I2t Peak non-repetitive surge current IFSM Limiting load integral I2t min typ tp = 10 ms, Tvj = 150 C, sine half wave, VR = 0 V, after surge max 5200 Unit A 8200 A 85x103 A 36.3x106 A2s tp = 10 ms, Tvj = 150 C, sine half wave, VR = 0.6*VRRM, after surge A A2s Characteristic values Parameter Symbol Conditions On-state voltage VF Threshold voltage VF0 Slope resistance rF min typ max Unit IF = 5000 A, Tvj = 150 C 1.23 V Tvj = 150 C IT = 2500...7500 A 0.8 V 0.086 mW max 18000 Unit As 470 A Switching Characteristic values Parameter Reverse recovery charge Reverse recovery current Symbol Conditions Qrr diF/dt = -10 A/s, VR = 200 V I F = 4000 A, Tvj = 150 C IRM min typ ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-01 Apr. 13 page 2 of 6 5SDD 54N4000 Thermal Maximum rated values 1) Parameter Operating junction temperature range Symbol Conditions min Tvj Storage temperature range Tstg typ max Unit 0 150 C -40 150 C max Unit 5.7 K/kW Characteristic values Parameter Symbol Conditions Double-side cooled Thermal resistance junction Rth(j-c) Fm = 81...108 kN to case min typ Rth(j-c)A Anode-side cooled Fm = 81...108 kN 11.4 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 11.4 K/kW Double-side cooled Fm = 81...108 kN 1 K/kW Single-side cooled Fm = 81...108 kN 2 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Zth(j-c) (t) = a R th i (1 - e- t/t i ) i =1 i 1 2 3 4 Rth i(K/kW) 3.731 1.250 0.434 0.292 ti(s) 0.8115 0.1014 0.0089 0.0015 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-01 Apr. 13 page 3 of 6 5SDD 54N4000 Max. on-state characteristic model: VF25 = Max. on-state characteristic model: ATvj + BTvj x I F + CTvj x ln(I F +1) + DTvj x I F VF150 = ATvj + BTvj x IF + CTvj x ln(I F +1) + DTvj x I F Valid for IF = 300 - 110000 A Valid for IF = 300 - 110000 A A25 B25 -3 486.40x10 C25 -6 45.53x10 D25 -3 65.82x10 A150 -15 68.19x10 B150 -3 22.00x10 C150 -6 49.09x10 D150 -3 113.10x10 -15 -20.75x10 Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current Fig. 5 Max. permissible case temperature vs. mean on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-01 Apr. 13 page 4 of 6 5SDD 54N4000 Fig. 6 Reverse recovery charge vs. decay rate of onstate current Fig. 7 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-01 Apr. 13 page 5 of 6 5SDD 54N4000 Fig. 8 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 High Power Rectifier Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2048 Field Measurements on High Power Press-Pack Semiconductors 5SYA 2051 Voltage Ratings of High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, Storage 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, Transportation 5SZK 9115 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Industry) 5SZK 9116 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Traction) Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1171-01 Apr. 13