ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRSM = 4000 V
Rectifier Diode
5SDD 54N4000
IF(AV)M =5200 A
IF(RMS) =8200 A
IFSM = 85×10
3
A
VF0 = 0.8 V
rF=0.086 mW
Doc. No. 5S YA1171-01 Apr. 13
· Patented free-floating silicon technology
· Very low on-state losses
· Optimum power handling capability
Blocking
Maximum rated values 1)
Parameter
Symbol
Conditions
Value
Unit
Max repetitive peak reverse voltage VRRM f = 50 Hz, tp
= 10 ms,
Tvj = 0…150 ° C 3600 V
Max non-repetitive peak reverse
voltage VRSM f = 5 Hz, tp = 10 ms,
Tvj = 0…150 ° C 4000 V
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Rev erse leakage c urrent IRRM VRRM, Tvj = 150 °C 400 mA
Mechanical data
Maximum rated values 1)
Parameter
Conditions
min
typ
max
Unit
Mounting force FM81 90 108 kN
Acceleration a Devi ce unclamped 50 m/s2
Acceleration a Devi ce clamped 100 m/s2
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Weight m 2.8 kg
Housing t hick ness H FM = 90 kN, Ta = 25 °C 34.3 35 mm
Surf ace creepage distance DS56 mm
Air stri ke distance Da22 mm
1) Maxi mum rated values indicat e li mits bey ond which dam age to the device m ay occur
5SDD 54N4000
ABB
Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-01 Apr. 13 page 2 of 6
On-state
Maximum rated values 1)
Parameter
Conditions
min
typ
max
Unit
Average on-state current IF(AV)M 50 Hz, Half sine wave, TC = 85 °C 5200 A
RMS on-state cur rent IF(RMS) 8200 A
Peak non-repetitive surge
current IFSM tp = 10 ms, Tvj = 150 °C,
sine half wave,
VR = 0 V, after surge
85×103A
Limiting load integral I2t 36.3×106A2s
Peak non-repetitive surge
current IFSM tp = 10 ms, Tvj = 150 °C,
sine half wave,
VR = 0.6*VRRM, after surge
A
Limiting load integral I2t A2s
Characteristic values
Parameter
Conditions
min
typ
max
Unit
On-state voltage VFIF = 5000 A, Tvj = 150 °C 1.23 V
Threshold vo ltage VF0 Tvj = 150 °C
IT = 2500...7500 A 0.8 V
Sl ope resistance rF0.086 mW
Switching
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Rev erse recovery charge Qrr diF/d t = -10 A/µs, VR = 200 V
IF = 4000 A, Tvj = 150 °C 18000 µAs
Rev erse recovery current IRM 470 A
5SDD 54N4000
ABB
Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-01 Apr. 13 page 3 of 6
Thermal
Maximum rated values 1)
Parameter
Conditions
min
typ
max
Unit
Operating junction
temperature range Tvj 0150 °C
Storage temperature range Tstg -40 150 °C
Characteristic values
Parameter
Conditions
min
typ
max
Unit
Therm al resistance junction
to case Rth(j-c) Double-side cooled
Fm = 81...108 kN 5.7 K/kW
Rth(j-c)A Anode- si de cooled
Fm = 81...108 kN 11.4 K/kW
Rth(j-c)C Cathode-si de cooled
Fm = 81...108 kN 11.4 K/kW
Therm al resistance c ase to
heatsink Rth(c-h) Double-side cooled
Fm = 81...108 kN 1K/kW
Rth(c-h) Single-side cooled
Fm = 81...108 kN 2K/kW
Analyti cal fun ction fo r transient thermal
impedance:
)e-(1R=(t)Z n
1i
t/-
ithc)-th(j å
=
i
t
i 1 2 3 4
Rth i(K/kW) 3.731 1.250 0.434 0.292
ti(s) 0.8115 0.1014 0.0089 0.0015
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
5SDD 54N4000
ABB
Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-01 Apr. 13 page 4 of 6
Max. on-stat e characteristic model:
VF25 FTvjFTvjFTvjTvj IDICIBA ×++×+×+= )1ln(
Valid for IF = 300 – 110000 A
Max. on-stat e characteristic model:
VF150 FTvjFTvjFTvjTvj IDICIBA ×++×+×+= )1ln(
Valid for IF = 300 – 110000 A
A
25
B
25
C
25
D
25 A150 B150 C150 D150
486.40×10
-
3
45.53×10
-
6
65.82×10
-
3
68.19×10
-
15
22.00×10
-
3
49.09×10
-
6
113.10×10
-
3
-20.75×10
-
15
Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics
Fig. 4 On-stat e power di ssipat ion v s. mean on-stat e
current Fig. 5 Max . permi ssibl e case t emperature v s. mean
on-stat e current
5SDD 54N4000
ABB
Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-01 Apr. 13 page 5 of 6
Fig. 6 Reverse recovery charge vs. decay rat e of on-
state cur rent Fig. 7 Peak rev erse recov ery current v s. decay rate
of on-state cur rent
5SDD 54N4000
ABB Switzerland Ltd, Semiconductors reserves the
right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5S YA1171-01 Apr. 13
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzer land
Telephone +41 (0)58 586 1419
Fax + 41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 8 Device Outline Drawing
Related documents:
5SYA 2020 Design of R C-Snubbers for Phase Control Applications
5SYA 2029 High Power Rectifier Diodes
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semicon ductors
5SYA 2048 Fi eld Measur ements on High Power Pres s-Pack Semiconduc tors
5SYA 2051 Voltage Ratings of High Power Semiconductors
5SZK 9104 Specification of environmental class for pressure contact diod es, PCTs and GTO, Storage
5SZK 9105 Specification of environmental class for pressure contact diod es, PCTs and GTO, Transportation
5SZK 9115 Specification of environmental class for pr essp ack Di odes, PCTs and GTOs, Operation (Industry)
5SZK 9116 Specification of envi ronmental class for presspac k Diodes, PCTs and GTO s, Operation (Traction)
Pl ease refer t o http://www.abb.com/semiconduc tors for c urrent vers ion of documents.