DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Features ID Max TA = +25C RDS(ON) Max Low On-Resistance N-Channel: 32m @ 10V (Notes 5 & 7) Q1 NEW PRODUCT Q2 -30V P-Channel: 39m @ -10V -7A Low Input Capacitance -5.6A Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 8.1A 46m @ VGS = 4.5V 6.1A 39m @ VGS = -10V 53m @ VGS = -4.5V 30V 46m @ 4.5V 32m @ VGS = 10V 53m @ -4.5V Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Power Management Functions Analog Switch Load Switch Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 e3 Marking Information (See Page 2) Ordering Information Weight: 0.072 grams (Approximate) SO-8 D2 D2 S2 D2 G2 D2 S1 D1 G1 D1 G2 G2 G1 G1 S S2 2 Top View Top View D1 D1 N-Channel MOSFET N-Channel MOSFET S1 S1 P-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number DMC3032LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMC3032LSD Document number: DS32153 Rev. 3 - 2 1 of 10 www.diodes.com November 2018 (c) Diodes Incorporated DMC3032LSD Marking Information 8 5 = Manufacturer's Marking C3032LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 18 = 2018) WW = Week (01 to 53) C3032LD YY WW NEW PRODUCT 1 4 Maximum Ratings N-CHANNEL - Q1 (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) TA = +25C TA = +85C Pulsed Drain Current (Note 6) Value 30 20 8.1 5.1 25 Unit V V Unit V V IDM Value -30 20 -7.0 -4.5 -25 Symbol PD RJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W C/W C ID IDM A A Maximum Ratings P-CHANNEL - Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Steady State TA = +25C TA = +85C Pulsed Drain Current (Note 6) ID A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. DMC3032LSD Document number: DS32153 Rev. 3 - 2 2 of 10 www.diodes.com November 2018 (c) Diodes Incorporated DMC3032LSD Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) 1 RDS(ON) -- |Yfs| VSD -- -- 2.1 32 46 -- 1 V Static Drain-Source On-Resistance 1.45 23 32 7.6 0.7 VDS = VGS, ID = 250A VGS = 10V, ID = 7A VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 7A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- -- 404.5 51.8 45.1 1.5 9.2 1.2 1.8 3.4 6.18 13.92 2.84 -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF Test Condition m S V pF pF pF nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VGS = 10V, VDS = 15V, RG = 3, RL = 2.6 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 20 20 VGS = 8.0V 16 )A ( T N E 12 R R U C N IA 8 R D ,D I 4 VGS = 4.5V 12 8 VDS = 5V ID, DRAIN CURRENT (A) 16 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics N-CHANNEL - Q1 (@TA = +25C, unless otherwise specified.) VGS = 3.0V 4 TA = 150C TA = 125C TA = 85C VGS = 2.0V 0 0 1 VGS = 2.5V 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMC3032LSD Document number: DS32153 Rev. 3 - 2 5 0 TA = 25C TA = -55C 0 1 2 3 VGS , GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 3 of 10 www.diodes.com November 2018 (c) Diodes Incorporated 0.08 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 1 VGS = 2.5V 0.1 VGS = 4.5V VGS = 8.0V VGS = 4.5V 0.06 TA = 125C TA = 85C 0.04 TA = 25C TA = -55C 0.02 R 0.01 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 1.3 1.1 VGS = 4.5V ID = 5.0A 0.9 VGS = 10V ID = 10A 0.5 -50 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.07 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 0.7 0 100 1.7 0.06 0.05 VGS = 4.5V ID = 5.0A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 C)) TJ, JUNCTION TEMPERATURE ( ( Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 C)) TJ, JUNCTION TEMPERATURE ( ( Fig. 5 On-Resistance Variation with Temperature 20 2.0 18 1.6 1.2 16 ID = 1mA IS, SOURCE CURRENT (A) )V ( E G A T L O V D L O H S E R H T E T A G , )H TA = 150C O (S D 0.1 VGS(TH), GATE-THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3032LSD ID = 250A 0.8 14 TTA ==25 C 25 A 12 10 8 6 4 0.4 T (S G 2 V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMC3032LSD Document number: DS32153 Rev. 3 - 2 4 of 10 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 November 2018 (c) Diodes Incorporated DMC3032LSD 1,000 C, CAPACITANCE (pF) NEW PRODUCT Ciss 100 Coss Crss 10 0 5 10 15 20 25 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance DMC3032LSD Document number: DS32153 Rev. 3 - 2 30 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) )A 10,000 n ( T N E R R 1,000 U C E G A K A E 100 L E C R U O S -N 10 IA R D ,S f = 1MHz I S D 5 of 10 www.diodes.com TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C 1 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage November 2018 (c) Diodes Incorporated DMC3032LSD Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -- -- -- -- -- -- -1 100 V A nA VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) -1 RDS(ON) -- |Yfs| VSD -- -- -2.2 39 53 -- -1 V Static Drain-Source On-Resistance -1.7 30 42 7 -0.75 VDS = VGS, ID = -250A VGS = -10V, ID = -4.3A VGS = -4.5V, ID = -3.7A VDS = -5V, ID = -4.3A VGS = 0V, IS = -1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- -- -- 1002 125 118 13 10.1 21.1 2.8 3.2 10.1 6.5 50.1 22.2 -- -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (-4.5V) Total Gate Charge (-10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V/-10V, VDS = -15V, ID = -6A VGS = -10V, VDS = -15V, RG = 6 , ID = -1A 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 20 20 V GS = -10V VDS = -5V VGS = -4.5V V GS = -4.0V ) 15 A ( T N E R R U 10 C N I A R D ,D 5 I ID, DRAIN CURRENT (A) )A 15 ( T N E R R U C 10 N I A R D ,D I 5 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics P-CHANNEL (@TA = +25C, unless otherwise specified.) VGS = -3.5V VGS = -3.0V TA = 150C TA = 125C TA = 85C 0 VGS = -2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics DMC3032LSD Document number: DS32153 Rev. 3 - 2 5 TA = 25C TA = -55C 0 0 1 2 3 4 5 VGS, GATE SOURCE VOLTAGE (V) 6 Fig. 12 Typical Transfer Characteristics 6 of 10 www.diodes.com November 2018 (c) Diodes Incorporated 0.10 0.08 0.06 VGS = -4.5V 0.04 VGS = -10V 0.02 O (S D R 0.08 TA = 150C 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 85C TA = 25C 0.04 TA = -55C 0.02 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.3 1.1 VGS = -10V ID = -10A 0.9 VGS = -4.5V ID = -5A 0.07 0.06 0.04 0.03 VGS = -10V ID = -10A 0.02 0.01 R 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Fig. 15 On-Resistance Variation with Temperature 20 2.5 16 2.0 ID = -1mA IS, SOURCE CURRENT (A) 1.5 VGS = -4.5V ID = -5A 0.05 O (S D 0.5 -50 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 14 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.08 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 1.5 0.7 0 20 1.7 )V ( E G A T L O V D L O H S E R H T E T A G , )H TA = 125C 0.06 R 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -10V O ( S D 0 )D E E Z I C L R A U M O R S O - N N I (E A R C D N A ,N ) T OS (S IS DE R R -N O 0.10 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N VGS(TH), GATE-THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3032LSD ID = -250A 1.0 0.5 TA = C T 25 = 25 A 12 8 4 T ( S G V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 17 Gate Threshold Variation vs. Ambient Temperature DMC3032LSD Document number: DS32153 Rev. 3 - 2 7 of 10 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Diode Forward Voltage vs. Current November 2018 (c) Diodes Incorporated DMC3032LSD 10,000 C, CAPACITANCE (pF) NEW PRODUCT 1,000 Ciss Coss 100 10 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 19 Typical Capacitance DMC3032LSD Document number: DS32153 Rev. 3 - 2 30 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) )A 10,000 n ( T N E R R 1,000 U C E G A K A E 100 L E C R U O S -N 10 IA R D ,S f = 1MHz I S D 8 of 10 www.diodes.com TA = 150C TA = 125C TA = 85C TA = 25C 1 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Drain-Source Leakage Current vs. Drain-Source Voltage November 2018 (c) Diodes Incorporated DMC3032LSD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm NEW PRODUCT E 1 b E1 h ) ides All s 9 ( A R .1 0 e Q 45 7 c 4 3 A1 E0 L Gauge Plane Seating Plane D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMC3032LSD Document number: DS32153 Rev. 3 - 2 X 9 of 10 www.diodes.com November 2018 (c) Diodes Incorporated DMC3032LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2018, Diodes Incorporated www.diodes.com DMC3032LSD Document number: DS32153 Rev. 3 - 2 10 of 10 www.diodes.com November 2018 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: DMC3032LSD-13