AP01N40G-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D 100% Avalanche Test Fast Switching Performance BVDSS 400V RDS(ON) 16 ID 0.2A G Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S SOT-89 D G Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 400 V +20 V 3 0.2 A 3 0.14 A 0.8 A 1.25 W Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Units 100 /W 1 201005191 AP01N40G-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 400 - - V VGS=10V, ID=0.2A - - 16 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=0.2A - 0.2 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=1A - 2.9 4.6 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=320V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.6 - nC 2 td(on) Turn-on Delay Time VDD=200V - 7.7 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3 - 23 - ns tf Fall Time VGS=10V - 73 - ns Ciss Input Capacitance VGS=0V - 76 125 pF Coss Output Capacitance VDS=25V - 11 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Min. Typ. IS=0.8A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=1A, VGS=0V - 260 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 460 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mount on FR4 board, t < 10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP01N40G-HF 0.6 1.2 10V 9.0V 8.0V 7.0V V G = 6.0 V ID , Drain Current (A) 0.8 0.6 0.4 10V 9.0V 8.0V 7.0V T A =150 o C 0.5 ID , Drain Current (A) o T A =25 C 1 0.4 V G = 6.0 V 0.3 0.2 0.1 0.2 0 0 0 4 8 12 16 20 24 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =0.2A V G =10V 1 2 1 0.9 0.8 0 -50 0 50 100 -50 150 o Fig 3. Normalized BVDSS v.s. Junction 50 100 150 Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 4 2.4 3 2 T j = 150 o C VGS(th) (V) IS (A) 0 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) o T j = 25 C 2 1.6 1.2 1 0 0.8 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP01N40G-HF f=1.0MHz 160 I D =1A V DS =320V 10 120 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 80 C iss 4 40 2 0 C oss C rss 0 0 1 2 3 1 4 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1 100us 1ms 10ms ID (A) 0.1 100ms 1s 0.01 T A =25 o C Single Pulse DC Normalized Thermal Response (Rthja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=100 oC/W 0.001 0.001 0.1 1 10 100 1000 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4