Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 400V
▼ 100% Avalanche Test RDS(ON) 16Ω
▼ Fast Switching Performance ID0.2A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TA=25℃Continuous Drain Current3, VGS @ 10V A
ID@TA=70℃Continuous Drain Current3, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TA=25℃Total Power Dissipation W
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-a Maximum Thermal Resistance, Junction-ambient3100 ℃/W
Data & specifications subject to change without notice 1
201005191
+20
AP01N40G-HF
Parameter
0.8
1.25
Rating
400
0.2
0.14
Halogen-Free Product
-55 to 150
Storage Temperature Range -55 to 150
Parameter
G
D
S
A
dvanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
D
GDS
SOT-89
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 400 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=0.2A - - 16 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=0.2A - 0.2 - S
IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=1A - 2.9 4.6 nC
Qgs Gate-Source Charge VDS=320V - 0.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.6 - nC
td(on) Turn-on Delay Time2VDD=200V - 7.7 - ns
trRise Time ID=1A - 12 - ns
td(off) Turn-off Delay Time RG=3.3Ω-23-ns
tfFall Time VGS=10V - 73 - ns
Ciss Input Capacitance VGS=0V - 76 125 pF
Coss Output Capacitance VDS=25V - 11 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=0.8A, VGS=0V - - 1.5 V
trr Reverse Recovery Time2IS=1A, VGS=0V - 260 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 460 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t < 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP01N40G-HF
2
AP01N40G-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
I
D=0.2A
VG=10V
0
0.2
0.4
0.6
0.8
1
1.2
0 4 8 12162024
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
9.0V
8.0V
7.0V
VG=6.0V
0
0.1
0.2
0.3
0.4
0.5
0.6
04812162024
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCTj = 25 oC
0.8
1.2
1.6
2
2.4
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
AP01N40G-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=100oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
01234
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=1A
VDS =320V
0
40
80
120
160
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
Operation in this
area limited by
RDS(ON)
