Selection Guide
Semiconductor Group 1 1998-11-01
RF-Transistors and MMICs
MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Dual-Gate GaAs FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
AIGaAs/GaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
GaAs Power FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
GaAs Broadband Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Low-Noise Preamplifiers for Mobile Communications (PCN, DECT, GSM) . . . . . . . . . . . . . 4
Integrated Power Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications. . . . . . 5
Variable Gain Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mixer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF-SPDT Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SIEGET25-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
SIEGET45-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
RF-Dual Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Si MMICs Broadband Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Si MMICs in SIEGET 25-Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Active Bias Controller. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Bipolar-Transistor Characteristic Curves. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AF-Transistors
General Purpose Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Double Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Double Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Low-Noise Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Double Digital Transistors Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Switching Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
High-Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
RF-Diodes
Varactor (Tuning) Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Varactor (Tuning) Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
PIN Diode s (General Purpose, Switch ing) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electros tatic-Discharge-Prot ection Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AF-Schottky Diodes/RF-Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Schottky Detector Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Schottky-Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
AF-Diodes
General Purpose, Swit ching and Rectifier Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Diode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
AF-Low-Leakage Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4
Bridge Rect ifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Leaded Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Selection Guide
Semiconductor Group 2 1998-11-01
RF-Transistors and MMICs
MOS Field-Effect Transistors
Type Maximu m Ratings Charac teristics (TA = 25 °C) Package
VDS
VID
mA Ptot
mW Gps
dB F
dB VDS
VID
mA f
MHz gfs
mS
Tetrode
BF 998 12 30 200 20 1.00 8 10 800 24 SOT-143
BF 998W 12 30 200 20 1.00 810 800 24 SOT-343
BF 1005 8 25 200 18 1.40 5 10 800 24 SOT-143
BF 1005S 825 200 19 1.60 512 800 30 SOT-143
BF 1009 12 25 200 20 1.00 9 13 800 24 SOT-143
BF 1009S 12 25 200 22 1.40 912 800 30 SOT-143
BF 1012 16 25 200 20 1.00 12 10 800 24 SOT-143
BF 1012S 16 25 200 22 1.40 12 12 800 30 SOT-143
▼BF 2000 12 30 200 22 1.1 5 10 800 24 SOT-143
▼BF 2000W 12 30 200 22 1.1 510 800 24 SOT-343
▼BF 2030 14 40 200 2.0 5 10 800 31 SOT-143
▼BF 2030W 14 40 200 2.0 510 800 31 SOT-343
▼BF 2040 14 40 200 2.0 5 15 800 45 SOT-143
▼
▼ New type
BF 2040W 14 40 200 2.0 515 800 45 SOT-343
Triode
BF 543 20 30 200 22 1.00 10 4200 12 SOT-23
BF 999 20 30 200 25 1.00 10 10 200 16 SOT-23
Dual-Gate GaAs FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz F
dB Gps
dB
CF 739 Dual-Gat e GaAs FET 10 2.5 - 6 1.8 1.8 17 SOT-143
CF 750 Biased Dual Gate GaAs FET
for frequencies from 400 MHz
to 3 GHz
23.81.81.910SOT-143
Selection Guide
Semiconductor Group 3 1998-11-01
GaAs FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz gm
mS F
dB Ga
dB
CFY 30 Low Noise, High Gain GaAs
FET 15 3.5 430 1.4 11.5 SOT-143
CFY 35- 20 Low Noise, High Gain GaAs
FET 10 2.5 12 30 1.9 8.5 MW-4
CFY 35- 23 Low Noise, High Gain GaAs
FET 10 2.5 12 30 2.2 8.5 MW-4
AIGaAs/GaAs HEMTs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz gm
mS F
dB Ga
dB
CFY 77- 08 Low Noise, High Gain HEMT
for front end amplifiers up to
20 GHz
15 212 65 0.7 10.5 MW-4
CFY 77- 10 Low Noise, High Gain HEMT
for front end amplifiers up to
20 GHz
15 2 12 65 0.9 10 MW-4
GaAs Power FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz Gp
dB P-1dB
dBm
CLY 2 Power Ampl. for frequencies
up to 3 GHz 180 31.8 14.5 23.5 MW-6
CLY 5 Power Ampl. for frequencies
up to 2.5 GHz 350 3 1.8 9.5 26.5 SOT-223
CLY 10 Power Ampl. for frequencies
up to 2.5 GHz 700 31.8 828.5 SOT-223
CLY 15*
* Pulsed operation
Power Ampl. for frequencies
up to 2.5 GHz 1400 3 1.8 6 31.5 SOT-223
Selection Guide
Semiconductor Group 4 1998-11-01
GaAs Broadband Amplifiers
Type Descrip t ion Characteristics (TA = 25 °C)
VDS = 4.5 V Package
ID
mA f
MHz G
dB ∆G
dB F
dB P– 1 dB
dBm
CGY 50 Sing le stage MMIC ampli fier
100 MHz to 3 GHz 60 200 … 1000
800 … 1800 10.0
8.5 0.4
1.1 3.0
3.0 16
16 SOT-143
CGY 52 Two stage MM I C am plif ier 160 200 … 1800 15.0 3.0 4.8 19 MW-7
CGY 62 Two stage MM I C am plif ier 130 200 … 1800
2500 19.0
15.0 2.0
–3.5
–17.5
–MW-6
Low Noise Preamplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C)
VDS = 3 V Package
ID
mA f
MHz Gp
dB F
dB IP3INPUT
dBm P– 1 dB
dBm
CGY 59 Single stage MMIC amplifier
100 MHz to 3 GHz 6950
1850 16.5
12.0 1.3
1.7 – 4
15
4MW-6
CGY 60 Single stage MMIC amplifier
100 MHz to 3 GHz with internal
match t o 50 Ω at 1.7 … 2 GHz
6 950
1850 15.5
12.5 1.35
1.9 – 3.0
0 5
5MW-6
Integrated Power Amplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C) Package
ID
AVD
Vf
GHz Gp
dB POut
dBm
▼CGY 93P Two stage PA for GSM
applications 1.8 3.5 0.9 25.5 35.5 MW-16
CGY 94 Two stage PA for GSM or
AMPS ap plic at ions 1.2 3.6 0.9 23.6 33.6 MW-12
▼CGY 96 PA for GSM900 application s 1.8 3.5 0.9 35.5 35.5 MW-16
All power amplifiers in pulsed operation mode
CGY 180 PA for DECT and PCS
applications 0.45 3.0 1.89 27 27 MW-12
CGY 181 PA for PCN/PC S appli cat io ns 1.2 3.6 1.75 15.5 31.5 MW-12
▼CGY 184 F our stage PA for PCN
applications 1.67 3.5 1.8 34 34 MW-16
CGY 195 P A fo r DE CT applications 0.45 3.0 1.89 18 27 SCT-595
▼
▼ New type
CGY 196 PA for DECT applicat ions 0.11 3.0 1.89 32 26 SCT-598
Selection Guide
Semiconductor Group 5 1998-11-01
Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications
Type Description Mode/Band Characteristics (TA = 25 °C) Package
Iop
AVD
Vf
MHz Gp
dB POut
dBm PAE
%
▼CGY 81 Tri mode PA f or
AMPS / C D M A /
TDMA
AMPS –3.5 824 - 849 24 31.5 55 MW-16
CDMA – 3.5 824 - 849 28 28 35
TDMA –3.5 824 - 849 27 30 40
▼CGY 191 Dual mode PA for
CDMA /TDMA C D MA [PCS] – 3.5 1850 - 1910 24 29 40 MW-16
TDMA [PCS] –3.5 1850 - 191 0 24 29 40
▼CGY 0819 Dual Band Tri Mode
PA for AMPS/
CDMA /TDMA
AMPS – 3.5 824 - 849 2 4 31.5 55 MW -16
CDMA –3.5 824 - 849 28 28 35
TDMA – 3.5824 - 849 273040
CDMA [PCS] –3.5 185 0 - 1910 24 29 40
TDMA [PCS] – 3.5 1850 - 191 0 24 29 40
▼CGY 0918 Dual Band PA for
GSM /PCN GSM 1.6 3.5 880 - 915 25 35 55 MW-16
PCN 1.4 3.5 1710 - 1785 24 34 45
▼
▼ New type
CGY 98 Broad band PA;
Matchable for GSM /
PCN
GSM 1.6 3.5 880 - 915 23 35 55 SCT-595
PCN 1.6 3.5 1710 - 1785 19 34 45
Variable Gain Amplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C) Package
ID
mA VDS
Vf
GHz G
dB ∆G
dB P– 1dB
dBm
CGY 120 Va riable gain amplifier for
GSM/PC N applications 45
45 3
30.9
1.8 22
20 55
55 14
14 MW-6
▼CGY 121A Variable gain amplifier for
GSM/PC N/ C D M A applications 45
45 3
30.9
1.8 19
17.5 53
53 14
14 MW-6
▼
▼ New type
CGY 121B Variable gain amplifier for
GSM/PC N/ C D M A applications 70
70 3
30.9
1.8 21.5
19.5 55
55 16
16 MW-6
Selection Guide
Semiconductor Group 6 1998-11-01
Mixer
Type Description Characteristics (TA = 25 °C) Package
Iop
mA VD
VFrequency Range
MHz GC
dB IP3
INPUT
dBm FSSB
dB PLO
dBm
CF 750 General pu rpose dua l gate
GaAs FET mixer 2.5 3.8 fRF, LO, IF ≤ 2000 15 – 5 4.5 – 3 SOT-143
CMY 91 M ixer with integrated IF
amplifilter 2.5 3 fIF ≤ 200
fRF ≤ 2500 9.5 0 8 – 3 MW-6
CMY 200 Ult ralinear downco nv ert er
1200 MHz to 40 MHz 50 5fIF = 30 … 100
fLO = 1000 … 1400 821.5 8– 5 MW-6
CMY 210 Ultralinear broadband mixer
with integrated LO-buffer 73fLO = 500 ... 25 00
fRF, fIF ≤ 2500 – 6.0 23 6.0 0 MW-6
▼CMY 211 Linear mixer with integrated
LO-buffer 2.5 3fLO = 500 … 2500
fRF, fIF < 3500 – 6.5 17.5 6.5 0MW-6
▼ New type
RF-SPDT Switch
Type Description Cha racteristics (TA = 25 °C) Package
▼ New type
f
GHz Ins ertion Lo s s
dB Isolation dB P– 1dB
dBm
▼CSY 240 RF-SPDT switch for mobile
communication applications 0.9
1.8 0.3
0.5 28
22 30 MW-6
RF Transistors
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BF 517 N15 25 280 2.50 3.5 2 5 800 11.0 14 5800 SOT-23 17
■BF 569 P 35 30 280 0.95 4.5 3 10 800 12.5 3 10 800 SOT-23 23
■BF 660 P30 25 280 0.70 ––––9.2 310 800 SOT-23 24
■BF 660W P 30 25 280 0.70 – – – – 9.2 3 10 800 SOT-323 24
BF 770A N12 50 300 6.00 258900 13.5 30 8900 SOT-23 15
BF 771 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6
BF 771W N12 80 580 8.00 1.3 10 8900 15.5 30 8900 SOT-323 6
BF 772 N 12 80 580 8.00 1.3 10 8 900 17.5 30 8 900 SOT-143 6
BF 775 N15 30 280 5.00 1.8 2 6 900 15.0 15 8900 SOT-23 13
■ Not for new design
Selection Guide
Semiconductor Group 7 1998-11-01
BF 775A N16 30 280 5.80 1.45 5 8 900 16.0 15 8900 SOT-23 14
BF 775W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13
BF 799 N20 35 280 1.10 3.0 510 100 11.2 510 800 SOT-23 18
BF 799W N 20 35 280 1.10 3.0 5 10 100 11.2 5 10 800 SOT-323 18
■BF 840 N40 25 280 0.38 1.7 110 0.1 ––––SOT-23 19
■BF 841 N 40252800.381.71100.1––––SOT-2319
BFG 19S N15 100 1000 5.50 2.5 20 8900 13.5 70 8900 SOT-223 16
BFG 135A N 15 150 1000 6.00 2.0 30 8 900 14.0 100 8 900 SOT-223 8
BFG 193 N12 80 600 8.00 1.3 10 8900 15.5 30 8900 SOT-223 6
BFG 194 P 15 100 1000 5.00 2.8 20 8 900 11.0 70 8 900 SOT-223 22
BFG 196 N12 100 800 7.50 1.5 20 8900 14.0 50 8900 SOT-223 7
BFG 235 N 15 300 2000 5.50 2.7 60 8 900 12.0 200 8 900 SOT-223 9
BFP 81 N16 30 280 5.80 1.45 5 8 900 21.0 15 8900 SOT-143 14
BFP 93A N 12 50 300 6.00 2.0 5 8 900 18.0 30 8 900 SOT-143 15
BFP 136 W N12 150 1000 5.50 3.3 30 51800 9.5 80 51800 SOT-343 8
BFP 180 N 8 4 30 7.002.251 5 180012.01 5 1800SOT-143 1
BFP 180 W N8430 7.00 2.25 1 5 1800 11.5 1 5 1800 SOT-343 1
BFP 181 N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143 3
BFP 181 R N12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143R 3
BFP 181 W N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-343 3
BFP 182 N12 35 250 8.00 1.9 3 8 1800 15.0 10 81800 SOT-143 4
BFP 182 R N 12 35 250 8.00 1.9 3 8 1800 15.0 10 8 1800 SOT-143R 4
BFP 182 W N12 35 250 8.00 1.9 3 8 1800 15.5 10 81800 SOT-343 4
BFP 183 N 12 65 250 8.00 2.0 5 8 1800 14.0 15 8 1800 SOT-143 5
BFP 183 R N12 65 250 8.00 2.0 5 8 1800 14.0 15 81800 SOT-143R 5
BFP 183 W N 12 65 450 8.00 2.0 5 8 1800 14.5 15 8 1800 SOT-343 5
BFP 193 N12 80 580 8.00 2.1 10 81800 11.5 30 81800 SOT-143 6
BFP 193 W N 12 80 580 8.00 2.1 10 8 1800 13.0 30 8 1800 SOT-343 6
BFP 194 P15 100 700 5.00 2.8 20 8900 12.0 70 8900 SOT-143 22
BFP 196 N 12 100 700 7.50 2.5 20 8 1800 10.0 50 8 1800 SOT-143 7
BFP 196 W N12 100 700 7.50 2.5 20 81800 11.5 50 81800 SOT-343 7
BFP 280 N 8 10 80 7.50 2.0 1.5 5 1800 15.0 3 5 1800 SOT-143 2
BFP 280 W N810 80 7.50 2.0 1.5 51800 15.0 3 5 1800 SOT-343 2
■ Not for new design
RF Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
Selection Guide
Semiconductor Group 8 1998-11-01
BFQ 19S N15 75 1000 5.50 2.5 20 8900 11.5 70 8900 SOT-89 16
BFQ 81 N 16 30 280 5.80 1.45 5 8 900 16.0 15 8 900 SOT-23 14
BFQ 193 N12 80 600 7.50 1.3 10 8900 14.0 30 8900 SOT-89 6
BFR 35AP N 15 30 280 5.00 1.8 2 6 900 15.0 15 8 900 SOT-23 13
BFR 92P N15 30 280 5.00 1.8 2 6 900 15.0 15 8900 SOT-23 13
BFR 92W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13
BFR 93A N12 50 300 6.00 2.0 5 8 900 13.5 30 8900 SOT-23 15
BFR 93AW N 12 50 300 6.00 2.0 5 8 900 15.0 30 8 900 SOT-323 15
BFR 106 N15 100 700 5.00 2.5 20 8900 12.5 70 8900 SOT-23 16
BFR 180 N 8 4 30 7.00 2.1 1 5 900 13.5 1 5 900 SOT-23 1
BFR 180W N8430 7.00 2.1 1 5 900 13.5 1 5 900 SOT-323 1
BFR 181 N 12 20 175 8.00 1.45 2 8 900 18.0 5 8 900 SOT-23 3
BFR 181W N12 20 175 8.00 1.45 2 8 900 18.5 5 8 900 SOT-323 3
BFR 182 N 12 35 250 8.00 1.2 3 8 900 17.5 10 8 900 SOT-23 4
BFR 182W N12 35 250 8.00 1.2 3 8 900 19.0 10 8900 SOT-323 4
BFR 183 N 12 65 450 8.00 1.2 5 8 900 16.5 15 8 900 SOT-23 5
BFR 183W N12 65 450 8.00 1.2 5 8 900 18.0 15 8900 SOT-323 5
BFR 193 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6
BFR 193W N12 80 580 8.00 1.3 10 8900 15.5 30 8900 SOT-323 6
BFR 194 P 15 100 700 5.00 2.8 20 8 900 10.0 70 8 900 SOT-23 22
BFR 280 N810 80 7.50 1.5 1.5 5900 17.0 3 5 900 SOT-23 2
BFR 280W N 8 10 80 7.50 1.5 1.5 5 900 17.0 3 5 900 SOT-323 2
BFS 17P N15 25 280 2.50 3.5 2 5 800 11.0 14 5800 SOT-23 17
BFS 17W N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-323 17
BFT 92 P15 25 200 5.00 2.0 2 8 900 13.5 15 8900 SOT-23 20
BFT 92W P 15 25 200 5.00 2.0 2 8 900 14.0 15 8 900 SOT-323 20
BFT 93 P12 35 300 5.50 2.7 2 8 900 11.5 30 8900 SOT-23 21
■ Not for new design
RF Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
Selection Guide
Semiconductor Group 9 1998-11-01
SIEGET®25-RF-BIPOLAR-Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BFP 405 N 4.5 12 55 25 1.15 22 1800 22 5 21800 SOT-343 10
BFP 420 N 4.5 35 160 25 1.05 5 2 1800 20 20 2 1800 SOT-343 11
BFP 450 N 4.5 100 450 24 1.25 10 2 1800 14 50 21800 SOT-343 12
▼▼ New type
BFP 490 N 4.5 600 1000 17.5 –––18009.520021800SCT-595–
SIEGET®45-RF-BIPOLAR-Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
▼▼ New type
BFP 520 N 2.5 40 100 45 0.95 22 1800 23 20 21800 SOT-343 –
RF-Dual Transistor Arrays
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BFS 480 N 810 80 7.50 1.5 1.5 5900 18 35900 SOT-363 2
BFS 481 N 12 20 175 8.00 1.45 2 8 900 19 5 8 900 SOT-363 3
BFS 482 N 12 20 250 8.00 1.2 38900 19.5 10 8900 SOT-363 4
BFS 483 N 12 65 450 8.00 1.2 5 8 900 19 15 8 900 SOT-363 5
BFS 17S N 15 25 280 2.50 3.5 25800 11.0 14 5800 SOT-363 17
Selection Guide
Semiconductor Group 10 1998-11-01
Si MMlCs Broadband Amplifiers
Type Maximum
Ratings Characteristics (TA = 25 °C; VD = 4.7 V; ZO = 50 Ω)Package
ID
mA Ptot
mW Gain
dB NF
dB f
MHz Gain
dB NF
dB f
MHz
BGA 310 60 250 10 6.0 100 96.5 1000 SOT-143
BGA 312 60 250 12 5.5 100 11 6.0 1000 SOT-143
BGA 318 60 250 18 3.5 100 16 4.0 1000 SOT-143
Si MMICs in SIEGET®25 Technology
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C; VD = 3.0 V; ZO = 50 Ω)Package
ID
mA Ptot
mW Gain
dB NF
dB f
MHz Gain
dB NF
dB f
MHz
▼BGA 420 15 90 19 1.9 100 13 2.2 1800 SOT-343
▼BGA 425 25 150 27 1.9 100 18.5 2.2 1800 SOT-363
▼▼ New type
BGA 427 25 150 27 1.9 100 18.5 2.2 1800 SOT-343
Active Bias Controller
Stabilizing bias current for RF tr ans is t ors , NPN t rans is t ors (IC up t o 250 mA) and FETs
Type Maximum
Ratings DC Characteristics with stabilized NPN transistors:
Relative Ch ange of ∆IC / IC
Package
VCC
Vvs hFE vs VS∆IC / IC vs TA
BCR 400R 15 0.08 × ∆hFE / hFE 0.15 × ∆VS / VS0.2% / K SOT-143
BCR 400W 15 0.08 × ∆hFE / hFE 0. 15 × ∆VS / VS0.2% / K SOT-343
Selection Guide
Semiconductor Group 11 1998-11-01
Bipolar-Transistor Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Transition frequency fT vs. collector current IC
NPN Types
Selection Guide
Semiconductor Group 12 1998-11-01
NPN Types
PNP Types
Selection Guide
Semiconductor Group 13 1998-11-01
AF-Transistors
General Purpose Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BC 807 P45 1000 330 200 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 807W P 45 1000 250 200 ≤ 100 25 100 - 630 * 100 1 ≤ 0.70 500 50 SOT-323
BC 808 P25 1000 330 200 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 808W P 25 1000 250 200 ≤ 100 25 100 - 630 * 100 1 ≤ 0.70 500 50 SOT-323
BC 817 N45 1000 330 170 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 817W N 45 1000 250 170 ≤ 100 25 100 - 630* 100 1 ≤ 0.70 500 50 SOT-323
BC 818 N25 1000 330 170 ≤ 100 25 100 - 630 * 100 1≤ 0.70 500 50 SOT-23
BC 818W N 25 1000 250 170 ≤ 100 25 100 - 630* 100 1 ≤ 0.70 500 50 SOT-323
BC 846 N65 200 330 250 ≤ 15 30 110 - 450* 2 5 ≤ 0.60 100 5SOT-23
BC 846W N 65 200 250 250 ≤ 15 30 110 - 450 * 2 5 ≤ 0.60 100 5 SOT-32 3
BC 847 N45 200 330 250 ≤ 15 30 110 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 847W N 45 200 250 250 ≤ 15 30 110 - 800 * 2 5 ≤ 0.60 100 5 SOT-32 3
BC 848 N30 200 330 250 ≤ 15 30 110 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 848W N 30 200 250 250 ≤ 15 30 110 - 800 * 2 5 ≤ 0.60 100 5 SOT-32 3
BC 856 P65 200 330 250 ≤ 15 30 125 - 475* 2 5 ≤ 0.60 100 5SOT-23
BC 856W P 65 200 250 250 ≤ 15 30 125 - 475* 2 5 ≤ 0.60 100 5 SOT-323
BC 857 P45 200 330 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 857W P 45 200 250 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5 SOT-323
BC 858 P30 200 330 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5SOT-23
BC 858W P 30 200 250 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.60 100 5 SOT-323
BCP 51 P45 1500 1500 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 51M P 45 15 00 1000 125 < 100 30 40 - 250* 150 2 < 0.5 0 500 50 SCT-595
BCP 52 P60 1500 1500 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 52M P 60 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 53 P80 1500 1500 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 53M P 80 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 54 N45 1500 1500 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 54M N 45 1700 1000 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 55 N60 1500 1500 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 55M N 60 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 56 N80 1500 1500 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-223
▼BCP 56M N 80 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
▼ New type
Selection Guide
Semiconductor Group 14 1998-11-01
BCP 68 N 20 2000 1500 100 ≤ 100 25 85 - 400* 500 1 ≤ 0.50 1000 100 SOT-223
BCP 69 P20 2000 1500 100 ≤ 100 25 85 - 400* 500 1≤ 0.50 1000 10 0 SOT-223
▼BCP 70M P 32 3000 1700 100 ≤ 100 30 85 - 475* 500 1 ≤ 0.4 2000 200 SCT-595
▼BCP 71M P–3000 1700 – – – – – – – – – SCT-595
▼BCP 72M P 10 3000 1700 100 ≤ 100 8 85 - 475* 500 1 ≤ 0.3 2000 200 SCT-595
BCW 60 N32 200 330 250 ≤ 20 32 120 - 630* 2 5 ≤ 0.25 10 0.25 SOT-23
BCW 61 P 32 200 330 250 ≤ 20 32 120 - 630* 2 5 ≤ 0. 25 10 0.25 S OT-23
BCW 65 N32 1000 330 170 ≤ 20 32 100 - 630* 100 1≤ 0.70 500 50 SOT-23
BCW 66 N 45 1000 330 170 ≤ 20 45 100 - 630* 1 00 1 ≤ 0.70 500 50 S OT -23
BCW 67 P32 1000 330 200 ≤ 20 32 100 - 630* 100 1≤ 0.70 500 50 SOT-23
BCW 68 P 45 1000 330 200 ≤ 20 45 100 - 630* 100 1 ≤ 0.70 500 50 SOT-23
BCX 41 N125 1000 330 100 ≤ 100 100 ≥ 63 100 1≤ 0.90 300 30 SOT-23
BCX 42 P 125 1000 330 150 ≤ 100 100 ≥ 63 100 1 ≤ 0.90 300 30 SOT-23
BCX 51 P45 1500 1000 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-89
BCX 52 P 60 1500 1000 125 ≤ 100 30 40 - 250* 150 2 ≤ 0.50 500 50 SOT-89
BCX 53 P80 1500 1000 125 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-89
BCX 54 N 45 1500 1000 100 ≤ 100 30 40 - 250* 150 2 ≤ 0.50 500 50 SOT-89
BCX 55 N60 1500 1000 100 ≤ 100 30 40 - 250* 150 2≤ 0.50 500 50 SOT-89
BCX 56 N 80 1500 1000 100 ≤ 100 30 40 - 250* 150 2 ≤ 0.50 500 50 SOT-89
BCX 68 N20 2000 1000 100 ≤ 100 25 85 - 400* 500 1≤ 0.50 1000 10 0 SOT-89
BCX 69 P 20 2000 1000 100 ≤ 100 25 85 - 400* 500 1 ≤ 0.50 1000 10 0 SOT-89
BCX 70 N45 200 330 250 ≤ 20 45 120 - 630* 2 5 ≤ 0.25 10 0.25 SOT-23
BCX 71 P 45 200 330 250 ≤ 20 45 120 - 630* 2 5 ≤ 0.25 10 0.25 S OT - 23
BDP 947 N45 5000 1500 100 100 45 40 - 475 500 1≤ 0.8 2000 200 SOT-223
BDP 948 P 45 5000 1500 100 100 45 40 - 475 500 1 ≤ 0.8 2 000 200 S OT -223
BDP 949 N60 5000 1500 100 100 60 40 - 475 500 1≤ 0.8 2000 200 SOT-223
BDP 950 P 60 5000 1500 100 100 60 40 - 475 500 1 ≤ 0.8 2 000 200 S OT -223
BDP 951 N80 5000 1500 100 100 80 40 - 475 500 1≤ 0.8 2000 200 SOT-223
BDP 952 P 80 5000 1500 100 100 80 40 - 475 500 1 ≤ 0.8 2 000 200 S OT -223
BDP 953 N100 5000 1500 100 100 100 40 - 475 500 1≤ 0.8 2 000 200 SOT-223
BDP 954 P 10 0 5000 1500 100 100 10 0 40 - 475 500 1 ≤ 0.8 2 000 200 SOT -223
BDP 955 N120 5000 1500 100 100 120 40 - 475 500 1≤ 0.8 2 000 200 SOT-223
BDP 956 P 12 0 5000 1500 100 100 12 0 40 - 475 500 1 ≤ 0.8 2 000 200 SOT -223
SMBTA 05 N60 500 330 100 ≤ 100 60 ≥ 10 0 100 1≤ 0.25 100 10 SOT-23
▼ New type
General Purpose Transistors (cont’d)
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 15 1998-11-01
SMBTA 06 N80 500 330 100 ≤ 100 80 ≥ 10 0 100 1≤ 0.25 100 10 SOT-23
▼SMBTA 06M N 80 500 330 100 ≤ 100 80 ≥ 100 100 1 ≤ 0.25 100 10 SCT-595
SMBTA 20 N40 200 330 125 ≤ 100 30 40 - 400 510 ≤ 0.25 10 1SOT-23
SMBTA 55 P 60 500 330 100 ≤ 100 60 ≥ 100 100 1 ≤ 0.25 100 10 SOT-23
SMBTA 56 P80 500 330 100 ≤ 100 80 ≥ 10 0 100 1≤ 0.25 100 10 SOT-23
▼SMBTA 56M P 80 500 330 100 ≤ 100 80 ≥ 100 10 0 1 ≤ 0.25 100 10 SCT-595
SMBTA 70 P40 200 330 125 ≤ 100 30 40 - 400 510 ≤ 0.25 10 1SOT-23
* Available in
hFE subgroups
▼ New type
Type
N = NPN
P = PNP
Maximum
Ratings Characterist ic s (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Double Transistor Arrays
▼BC 846PN N/P 65 200 330 250 ≤ 15 30 110 - 450* 2 5 ≤ 0.60 100 5SOT-363
▼BC 846S N 65 200 330 250 ≤ 15 3 0 110 - 45 0* 2 5 ≤ 0.60 100 5 SOT-363
BC 847PN N/P 45 200 250 250 ≤ 15 30 290 2 5 ≤ 0.60 100 5SOT-363
BC 847S N 45 200 250 250 ≤ 15 30 290 2 5 ≤ 0.60 100 5 SOT-363
▼BC 856S P65 200 330 250 ≤ 15 30 125 - 475* 2 5 ≤ 0.60 100 5SOT-363
BC 857S P 45 200 250 250 ≤ 15 30 290 2 5 ≤ 0.60 100 5 SOT-363
▼SMBT
3904S N40 200 250 300 ≤ 50 30 100 - 300 10 1≤ 0.30 50 5SOT-363
▼SMBT
3904PN N/P 40 200 250 250 ≤ 50 30 100 - 300 10 1 ≤ 0. 4 50 5 SOT-36 3
▼
▼ New type
SMBT
3906S P40 200 250 250 ≤ 50 30 100 - 300 10 1≤ 0.4 50 5SOT-363
General Purpose Transistors (cont’d)
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 16 1998-11-01
* Available in hFE subgroups
Type
N = NPN
P = PNP
Maximum
Ratings Characteri sti cs (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Double Transistors
BCV 61 N30 200 300 250 ≤ 15 30 110 - 800* 2 5 ≤ 0.60 100 5SOT-143
BCV 62 P 30 200 300 250 ≤ 15 30 125 - 800 * 2 5 ≤ 0.65 100 5 SOT-143
Low-Noise Transistors
BC 849 N30 200 330 250 ≤ 15 30 200 - 800* 2 5 ≤ 0.25 10 0.5 SOT-23
BC 849W N 30 200 250 250 ≤ 15 30 200 - 800* 2 5 ≤ 0 25 10 0.5 SOT-3 23
BC 850 N45 200 330 250 ≤ 15 30 200 - 800* 2 5 ≤ 0.25 10 0.5 SOT-23
BC 850W N 45 200 250 250 ≤ 15 30 200 - 800* 2 5 ≤ 0.25 10 0.5 SOT-323
BC 859 P30 200 330 250 ≤ 15 30 125 - 800* 2 5 ≤ 0.3 10 0.5 SOT -23
BC 859W P 30 200 250 250 ≤ 15 30 125 - 800 * 2 5 ≤ 0.3 10 0.5 SOT-323
BC 860 P45 200 330 250 ≤ 15 30 220 - 800* 2 5 ≤ 0.3 10 0.5 SOT -23
BC 860W P 45 200 250 250 ≤ 15 30 220 - 800 * 2 5 ≤ 0.3 10 0.5 SOT-323
BCW 60FF,FN
N32 200 330 250 ≤ 20 32 250 - 630* 2 5 ≤ 0.25 10 0.25 SOT-2 3
BCW 61FF,FN
P32 200 330 250 ≤ 20 32 250 - 630 * 2 5 ≤ 0.25 10 0.25 SOT-2 3
SMBT 5086 P50 50 330 40 ≤ 50 35 ≥ 150 10 5≤ 0.30 10 1SOT-23
SMBT 5087 P 50 50 330 40 ≤ 50 35 ≥ 250 10 5 ≤ 0.30 10 1 SOT-23
SMBT 6428 N50 200 330 100 ≤ 10 30 ≥ 250 10 5≤ 0.2 10 0.5 SOT-2 3
SMBT 6429 N 45 200 330 100 ≤ 10 30 ≥ 500 10 5 ≤ 0.2 10 0.5 SOT-23
Selection Guide
Semiconductor Group 17 1998-11-01
Digital Transistors
Type
N = NPN
P = PNP
Maximum Ratings Resistance
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
kΩ
R2
kΩ
fT
MHz
10 mA/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 mA/
5 V
BCR 108 N50 10 100 200 2.2 47.0 170 70 0.5 0.8 SOT-23
BCR 108W N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-323
BCR 112 N50 15 100 200 4.7 4.7 140 20 1.0 1.5 SOT-23
BCR 116 N 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23
BCR 116 W N50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323
BCR 119 N 50 15 100 200 4.7 – 150 120 0.5 0.8 SOT-23
BCR 133 N50 20 100 330 10.0 10.0 130 30 1.0 1.5 SOT-23
BCR 133W N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-323
BCR 135 N50 20 100 200 10.0 47.0 150 70 0.5 1.0 SOT -23
BCR 135W N 50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-323
BCR 141 N50 30 100 200 22.0 22.0 130 50 1.0 1.5 SOT-23
BCR 141W N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-323
BCR 142 N50 30 100 200 22.0 47.0 150 70 1.5 1.2 SOT-23
BCR 142W N 50 30 100 250 22.0 47.0 150 70 1.5 1.2 SOT-323
BCR 146 N50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23
BCR 146W N 50 50 70 250 47.0 22.0 150 50 1.5 2.6 SOT-323
BCR 148 N50 50 70 200 47.0 47.0 100 70 1.0 1.5 SOT-23
BCR 148W N 50 50 70 250 47.0 47.0 100 70 1.0 1.5 SOT-323
BCR 158 P50 10 100 200 2.2 47.0 200 70 0.5 0.8 SOT-23
BCR 158W P 50 10 100 250 2.2 47.0 200 70 0.5 0.8 SOT-323
BCR 162 P50 15 100 200 4.7 4.7 200 20 1.0 1.5 SOT-23
BCR 166 P 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23
BCR 166W P50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323
BCR 169 P 50 15 100 200 4.7 – 200 120 0.5 0.8 SOT-23
BCR 183 P50 20 100 200 10.0 10.0 200 30 1.0 1.5 SOT-23
BCR 185 P 50 20 100 200 10.0 47.0 200 70 0.5 1.0 SOT-23
BCR 185W P50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-323
BCR 191 P 50 30 100 200 22.0 22.0 200 50 1.0 1.5 SOT-23
BCR 192 P50 30 100 330 22.0 47.0 200 70 1.5 1.2 SOT-23
BCR 196 P 50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23
BCR 196W P50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-323
BCR 198 P 50 50 70 200 47.0 47.0 190 70 1.0 1.5 SOT-23
BCR 198W P50 50 70 250 47.0 47.0 190 70 1.0 1.5 SOT-323
BCR 503 N 50 12 500 330 2.2 2.2 100 40 1.0 1.5 SOT-23