PMCM6501UNE
20 V, N-channel Trench MOSFET
30 May 2017 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size
Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
•Low threshold voltage
•Ultra small package: 0.98 × 1.48 × 0.35 mm
•Trench MOSFET technology
•ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•Relay driver
•High-speed line driver
•Low-side loadswitch
•Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 20 V
VGS gate-source voltage
Tj = 25 °C
-8 - 8 V
IDdrain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 8.7 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 17 21 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
A1 G gate
A2 S source
B1 S source
B2 S source
C1 D drain
C2 D drain
Transparent top view
A
1 2
B
C
WLCSP6 (WLCSP6_3-2)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMCM6501UNE WLCSP6 wafer level chip-size package; 6 bumps (3 x 2) WLCSP6_3-2
7. Marking
Table 4. Marking codes
Type number Marking code
PMCM6501UNE AE
PIN A1
INDICATION
Top view, balls down
MARKING CODE
(EXAMPLE)
aaa-013901
A B C
2
1
Fig. 1. WLCSP6 marking code description
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 20 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 8.7 A
VGS = 4.5 V; Tamb = 25 °C [1] - 6.6 A
IDdrain current
VGS = 4.5 V; Tamb = 100 °C [1] - 4.2 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 27 A
[2] - 556 mWTamb = 25 °C
[1] - 1.3 W
Ptot total power dissipation
Tsp = 25 °C - 12.5 W
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source Drain Diode
ISsource current Tamb = 25 °C [1] - 1.2 A
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Tj(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Tj(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 3. Normalized continuous drain current as a
function of junction temperature
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 4 / 15
aaa-026584
VDS (V)
10-1 102
101
102
ID
(A)
10-2
10-1
1
10
DC; Tsp = 25 °C
DC; Tamb = 25 °C; 6 cm2
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 180 225 K/W
[2] - 65 85 K/W
in free air
[3] - 75 95 K/W
Rth(j-a) thermal resistance
from junction to
ambient
t ≤ 5 s [3] - 45 55 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single sided-copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain, 4 layer, 1 cm2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 5 / 15
aaa-013880
tp (s)
10-3 102103
10110-2 10-1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.50
0.01
0.20
0.10
0.05
0.02
0
0.25
0.33
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013881
tp (s)
10-3 102103
10110-2 10-1
10
102
Zth(j-a)
(K/W)
1
duty cycle = 1
0.01
0.75
0.50
0.33 0.25
0.20
0.10
0.05
0.02
0
FR4 PCB, mounting pad for drain 6 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.6 0.9 V
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 200 nA
IGSS gate leakage current
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -200 nA
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 17 21 mΩ
VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 25 29 mΩ
VGS = 2.5 V; ID = 3 A; Tj = 25 °C - 20 25 mΩ
VGS = 1.8 V; ID = 2 A; Tj = 25 °C - 22 32 mΩ
RDSon drain-source on-state
resistance
VGS = 1.5 V; ID = 1 A; Tj = 25 °C - 30 45 mΩ
gfs forward
transconductance
VDS = 5 V; ID = 3 A; Tj = 25 °C - 40 - S
RGgate resistance f = 1 MHz; Tj = 25 °C - 1.2 - Ω
Dynamic characteristics
QG(tot) total gate charge - 19 28 nC
QGS gate-source charge - 1.2 - nC
QGD gate-drain charge
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
- 5.8 - nC
Ciss input capacitance - 105 - pF
Coss output capacitance - 19 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 18 - pF
td(on) turn-on delay time - 7.3 - ns
trrise time - 28 - ns
td(off) turn-off delay time - 100 - ns
tffall time
VDS = 10 V; ID = 6.6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 46 - ns
Source-drain diode
VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.6 1.2 V
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 7 / 15
VDS (V)
0 431 2
aaa-026585
25
ID
(A)
0
20
15
10
5
1.2 V
VGS = 1.0 V
1.4 V
4.5 V
1.8 V
1.5 V
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-026586
VGS (V)
0 1.20.80.4
10-4
10-5
10-3
ID
(A)
10-6
maxmin typ
VDS = 5 V; Tj = 25 °C
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
ID (A)
0 5 10 15 20 25
aaa-026587
60
RDS (on)
(mΩ)
0
10
20
30
40
50
1.2 V 1.4 V
VGS = 4.5 V
1.5 V
1.8 V
2.5 V
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)
0 1 2 3 4 5
aaa-026588
60
RDS (on)
0
10
20
30
40
50
Tj= 150 °C
Tj= 25 °C
ID = 6.8 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 8 / 15
VGS (V)
0 21.50.5 1
aaa-026589
30
ID
(A)
0
25
20
15
10
5
Tj= 150 °C Tj= 25 °C
VDS > ID x RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
aaa-026590
1.5
a
0
0.5
1.0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Tj (°C)
-60 1801200 60
aaa-026591
0.5
1.0
1.5
VGS(th)
(V)
0
max
typ
min
ID = 250 µA; VDS = VGS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
VDS (V)
10-1 102
101
aaa-026592
104
C
(pF)
102
103Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 9 / 15
QG (nC)
0 5 20 2510 15
aaa-026593
2
3
1
4
5
VGS
(V)
0
VDS = 10 V; ID = 3 A; Tamb = 25 ºC
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 16. Gate charge waveform definitions
VSD (V)
0 1.20.80.4
aaa-026594
1.2
IS
(A)
0
0.4
0.8
Tj= 150 °C Tj= 25 °C
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 18. Duty cycle definition
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 10 / 15
12. Package outline
Fig. 19. Package outline WLCSP6 (WLCSP6_3-2)
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 11 / 15
13. Soldering
Footprint information for reflow soldering WLCSP6_3-2
wlcsp6_3-2_fr
solder resist
occupied area
solder paste = solderland
Dimensions in mm
0.35
0.15
1.7
0.5
0.5 1.20.25
0.25
Fig. 20. Reflow soldering footprint for WLCSP6 (WLCSP6_3-2)
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 12 / 15
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMCM6501UNE v.1 20170530 Product data sheet - -
Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 13 / 15
15. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
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changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 14 / 15
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Nexperia PMCM6501UNE
20 V, N-channel Trench MOSFET
PMCM6501UNE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 30 May 2017 15 / 15
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
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Date of release: 30 May 2017