2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems TO-92-18RM (TO-18 Lead Form) Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S D 1 Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code Top View Top View Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 100 W G S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) Pulsed Drain TA = 25_C TA = 70_C Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA = 25_C TA = 70_C PD Unit V 0.47 0.37 A 1.0 0.8 0.51 W RthJA 156 _C/W TJ, Tstg -55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 72705 S-40247--Rev. A, 16-Feb-04 www.vishay.com 1 2N7000KL/BS170KL Vishay Siliconix New Product SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 10 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 2.0 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55_C 10 On State Drain Currentb On-State ID(on) D( ) Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On Drain-Source On-Resistance Resistanceb Diode Forward Voltage 0.8 VGS = 4.5 V, VDS = 10 V 0.5 mA mA A VGS = 10 V, ID = 0.5 A 1.1 2 VGS = 4.5 V, ID = 0.2 A 1.6 4 gfs VDS = 10 V, ID = 0.5 A 550 VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 0.4 0.6 VDS = 10 V, VGS = 4.5 V ID ^ 0.25 A 0.11 rDS(on) DS( ) Forward Transconductanceb VGS = 10 V, VDS = 7.5 V V W mS V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.15 Rg 173 td(on) 3.8 10 Gate Resistance Turn On Time Turn-On VDD = 30 V, RL = 150 W ID ^ 0.2 02A A, VGEN = 10V Rg = 10 W tr td(off) Turn-Off Time tf nC W 4.8 15 12.8 20 9.6 15 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 6V VGS = 10, 7 V TJ = -55_C I D - Drain Current (A) 5V 0.8 I D - Drain Current (A) Transfer Characteristics 1.2 0.6 4V 0.4 0.2 0.9 25_C 125_C 0.6 0.3 3V 0 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72705 S-40247--Rev. A, 16-Feb-04 2N7000KL/BS170KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 4.0 On-Resistance vs. Drain Current Capacitance 40 VGS = 0 V 32 3.0 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 3.5 2.5 2.0 VGS = 4.5 V 1.5 VGS = 10 V 1.0 Ciss 24 16 Coss 8 Crss 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 5 ID - Drain Current (mA) VDS = 10 V ID = 250 mA 25 VGS = 10 V @ 500 mA 5 4 3 2 1.6 1.2 VGS = 4.5 V @ 200 mA 0.8 0.4 1 0 0.0 20 On-Resistance vs. Junction Temperature 2.0 rDS(on) - On-Resiistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 15 VDS - Drain-to-Source Voltage (V) Gate Charge 7 10 0.1 0.2 0.3 0.4 0.5 0.0 -50 0.6 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 5 1000 r DS(on) - On-Resistance ( W ) I S - Source Current (A) VGS = 0 V 100 TJ = 125_C 10 TJ = 25_C TJ = -55_C 3 2 ID = 500 mA ID = 200 mA 1 0 1 0.00 4 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72705 S-40247--Rev. A, 16-Feb-04 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 2N7000KL/BS170KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 0.4 20 0.2 16 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 -0.2 12 8 -0.4 TA = 25_C 4 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.1 0.01 10 1 100 600 Time (sec) TJ - Junction Temperature (_C) Safe Operating Area 10 IDM Limited Limited by rDS(on) I D - Drain Current (A) 1 1 ms 10 ms 0.1 100 ms ID(on) Limited 0.01 1s 10 s dc TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =350_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 www.vishay.com 4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72705 S-40247--Rev. A, 16-Feb-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1