FEATURES
DTrenchFETr Power MOSFET
DESD Protected: 2000 V
APPLICATIONS
DDirect Logic-Level Interface: TTL/CMOS
DSoild State Relays
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
2N7000KL/BS170KL
Vishay Siliconix
New Product
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)VGS(th) (V) ID (A)
60
2 @ VGS = 10 V
1 0 to 2 5
0.47
60 4 @ VGS = 4.5 V 1.0 to 2.5 0.33
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
Ordering Information: 2N7000KL-TR1
Device Marking
Front View
“S” 2N
7000KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
Ordering Information: BS170KL-TR1
Device Marking
Front View
“S” BS
170KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D
S
G
100 W
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ = 150
_
C)
TA = 25_C
ID
0.47
Continuous Drain Current (TJ = 150_C) TA = 70_CID0.37 A
Pulsed Drain CurrentaIDM 1.0
Power Dissipation
TA = 25_C
PD
0.8
W
Power Dissipation TA = 70_CPD0.51 W
Maximum Junction-to-Ambient RthJA 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
2N7000KL/BS170KL
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA1 2.0 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1mA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55_C10 mA
On State Drain Currentb
ID( )
VGS = 10 V, VDS = 7.5 V 0.8
A
On-State Drain Current
b
ID(on) VGS = 4.5 V, VDS = 10 V 0.5 A
Drain Source On Resistanceb
rDS( )
VGS = 10 V, ID = 0.5 A 1.1 2
W
Drain-Source On-Resistance
b
rDS(on) VGS = 4.5 V, ID = 0.2 A 1.6 4 W
Forward Transconductancebgfs VDS = 10 V, ID = 0.5 A 550 mS
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V
Dynamicb
Total Gate Charge Qg0.4 0.6
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V
ID ^ 0.25 A 0.11 nC
Gate-Drain Charge Qgd
.
0.15
Gate Resistance Rg173 W
Turn On Time
td(on) 3.8 10
Turn-On Time trVDD = 30 V, RL = 150 W
4.8 15
ns
Turn
-
Off Time
td(off)
D
^
0.2
,
GEN
=
10
Rg = 10 W12.8 20
ns
T
urn-
Off Ti
me
tf
9.6 15
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
012345 0123456
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS = 10, 7 V
3 V
5 V
4 V
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
TJ = −55_C
125_C
25_C
6 V
1.2
0.9
0.6
0.3
0
2N7000KL/BS170KL
Vishay Siliconix
New Product
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.4
0.8
1.2
1.6
2.0
−50 −25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
VGS = 10 V @ 500 mA
VGS = 4.5 V
@ 200 mA
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS = 10 V
ID = 250 mA
Gate Charge
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
VGS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.2 0.4 0.6 0.8 1.0
On-Resistance vs. Drain Current
ID − Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
− On-Resistance (rDS(on) W)
0
8
16
24
32
40
0 5 10 15 20 25
Capacitance
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
0
1
2
3
4
5
0246810
On-Resistance vs. Gate-Source Voltage
VGS − Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
− On-Resistance (rDS(on) W)
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25_C
TJ = 125_C
Source-Drain Diode Forward Voltage
VSD − Source-to-Drain Voltage (V)
− Source Current (A)IS
10
TJ = −55_C
VGS = 0 V
rDS(on) − On-Resiistance
(Normalized)
2N7000KL/BS170KL
Vishay Siliconix New Product
www.vishay.com
4
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0
1
16
20
100 6000.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
Threshold Voltage Variance Over Temperature
Variance (V)VGS(th)
−0.8
−0.6
−0.4
−0.2
−0.0
0.2
0.4
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
TJ − Junction Temperature (_C)
8
12
4
10
TA = 25_C
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
10
0.1
0.1 1 10 100
0.001
1
1 ms
− Drain Current (A)ID
0.01
Limited by rDS(on)
TA = 25_C
Single Pulse
10 ms
100 ms
dc
IDM Limited
ID(on)
Limited
BVDSS Limited
10 s
1 s
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA =350_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
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