Philips Semiconductors Military Bipolar Memory Products Product specification Renee eee eee ee erence 4K-bit TTL bipolar PROM (512 x 8) 828141 FEATURES Address access time: 90ns max Input loading: -150A max @ On-chip address decoding No separate fusing pins Fully TTL compatible Outputs: 3-State Unprogrammed outputs are Low level APPLICATIONS Prototyping/volume production @ Sequential controllers ORDERING INFORMATION DESCRIPTION ORDER CODE | peaanaron 24-pin Ceramic DIP : (600mil-wide} 828141/BJA GDIP1-T24 24-pin Ceramic Flat Pack 82S141/BKA GDFP2-F24 * MIL-STD 1835 or Appendix A of 1995 Military Data Handbook ABSOLUTE MAXIMUM RATINGS @ Microprogramming Hardwired algorithms Control store @ Random logic Code conversion DESCRIPTION The 828141 is fiald programmable, which means that custom pattems are immediately available by following the Philips Genenc | fusing procedure. The standard devices are supplied with all outputs at logical Low. Outputs are programmed to logic High level at any specified address by fusing the Ni-Cr link matrix. The 82S141 includes on-chip decoding and four chip enable inputs for ease of memory expansion, and features 3-State outputs for optimization of word expansion in bused organizations. SYMBOL PARAMETER RATING Vec Supply voltage +7 +5.5 Off-State 45.5 Operating temperature range -55 to +125 -65 to +150 PIN CONFIGURATION BLOCK DIAGRAM NI Ag OT a7 OF zl vee appress | 1:64 | Ag [2 [23] Ag LINES | DECODER | 64 * 64 MATRIX 4s [3] [22] NC he Lu Ag [4] j21] cE; ~~ J ag Gy [20] CEQ a 1:6 | 1:8 9 4:8 | 4: | 4:8 | 1:8 | 1:8 | 1:8 it : e : 3 : : : so (I 9] cea AD MUX | MUX J MUX | MUX | MUX | MUX | MUX | MUX a 77 [18] ce4 Ag ag 17] og | | | I | | I 1 BP 18] O7 _ 8 3-STATE DRIVERS 02 [19 Ee ce og [i a] 5 yy Ft Ee Eo GND 7 113] 04 Oy O02 O3 OF OF OG C7 Og OUTPUT LINES March 31, 1992 1077 853-0260 06265Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM (512 x 8) 828141 Dc ELECTRICAL CHARACTERISTICS -55C <Ta< +125 C, 4.5V < Veco < 5.5V SYMBOL PARAMETER TEST CONDITIONS? 2 LIMITS UNIT Min | Typ | Max Input voltage Vit Low 0.8 Vv Vin High 2.0 v Vik Clamp Veo = 4.5V, |) =-18MA -0.8 1.2 Vv Output voltage Voc = 4.5V, CE; 2 = Low, CE3,4 = High Voi Low lo = 9.6mMA 05 v Vou High Io = -2mA 2.4 v input current Vec = 5.5V lie Low V| = 0.45V -150 pA by High V, = 5.5V 40 pA Output current Veco = 5.5V loz Hi-Z state CE, 2 = High, CE3,4 = Low, Vo =5.5V +40 pA CE, 2 = High, CE3,4 = Low, Vg = 0.4V -40 pA los Short circuit? CE, 2 = Low, CE3 4 = High, Vo = OV 15 -85 mA Voc = 5.5V, High Stored Supply current CE12 = High, CE aa = Low loc Veo = 5.5 125 185 mA Capacitance Veo = 5.0V, CE; 2 = High Cin Input V, = 2.0V 5 10 pF Court Output Vo =2.0V 8 13 pF AC ELECTRICAL CHARACTERISTICS 55C < Ta <+125C, 4.5V s Voc < 5.5V SYMBOL PARAMETER TO FROM LIMITS UNIT Min Typ* Max taa | Output Address 50 90 ns toe Access time Output Chip enable 20 50 ns tcp Disable time Output Chip disable 20 50 ns NOTES: 1. Positive current is defined as into the terminal referenced. 2. Alt voltages with respect to network ground, 3. Duration of short circuit should not exceed 1 second. 4. Tested at an address cycte time of tps. | 5. Typical values are at Voc = 5V, Ta = +25 C. 6. Guaranteed, but not tested. March 31. 1992 1078Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM (512 x 8) 828141 TEST LOAD CIRCUITS VOLTAGE WAVEFORMS Voc ay tw | a Ov I sare Nw wf Ol ao o.3V 0.3V ov Ootat O*T a2 a 5.0V K THLE smu) rc ont ag TLHGr) trautn | um Ry 27 a 3.0V O15 our PULSE vu a) oo . 0.39 ! w 0.3 ov oel as osfo Ro & o te: Teo GNCLUDES SCOPE Input Pulse Definitions oe]ces cEs| == <= CAPACITANCE) GNO aL INPUT PULSE CHARACTERISTICS . vu Rep. Rate | Pulse Width | try trae NOTE: Ry = 4700, Rg = 10000, CL = S0pF 1.8V iMHz 500ns <6ns sons TIMING DIAGRAMS 3.0V ADDRESS *K vu ov 3.0V You VM You ma Veg = 1.5V 3.0V ADDRESS ov 3.0v ov You HZ You HLZ Ym tee Vy = 1.5V March 31, 1992 1079