BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor MMBTH10
Document number: BL/SSSTC125 www.galaxycn.com
Rev.A 1
FEATURES Pb
Lead-free
z High transition frequency.
z Power dissipation.(PC=350mW)
APPLICATIONS
z VHF/UHF Transistor.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTH10 3EM SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 3 V
ICCollector Current -Continuous 50 mA
PCCollector Dissipation 350 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 B25 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 3
V
Collector cut-off current ICBO VCB=25V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=2V,IC=0 0.1 μA
DC current gain hFE VCE=10V,IC=4.0mA 60
Collector-emitter saturation voltage VCE(sat) IC=4.0mA, IB= 0.4mA B 0.5 V
Base-emitter on voltage VBE(on) IC=4.0mA, VCE=10V 0.95 V
Transition frequency fT
VCE=10V, IC= 4.0mA
f=100MHz 650 MHz
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor MMBTH10
Document number: BL/SSSTC125 www.galaxycn.com
Rev.A 2
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor MMBTH10
Document number: BL/SSSTC125 www.galaxycn.com
Rev.A 3
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
G
K
H
J
E
D
C
B
A
PACKAGE INFORMATION
Device Package Shipping
MMBTH10 SOT-23 3000/Tape&Reel
