SB120 - SB160 SENSITRON SEMICONDUCTOR 1.0A SCHOTTKY BARRIER RECTIFIER Data Sheet 3061, Rev. -- Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications A B A C D Mechanical Data Dim Min DO-41 Max Min A 25.4 -- 1.000 -- B 4.06 5.21 0.159 0.205 C 0.71 0.864 0.028 0.034 D 2.00 2.72 0.107 Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.34 grams (approx.) Mounting Position: Any Marking: Type Number 0.079 In mm Maximum Ratings and Electrical Characteristics Max In inch @TA=25C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) SB120 SB130 SB140 SB150 SB160 Unit VRRM VRWM VR 20 30 40 50 60 V VR(RMS) 14 21 28 35 42 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 40 A Forward Voltage VFM Peak Reverse Current At Rated DC Blocking Voltage @TL = 100C Symbol @IF = 1.0A @TA = 25C @TA = 100C Typical Junction Capacitance (Note 2) 0.50 0.5 10 IRM Cj 0.70 110 V mA 80 pF Typical Thermal Resistance Junction to Lead RJL 15 K/W Typical Thermal Resistance Junction to Ambient (Note 1) RJA 50 K/W Tj, TSTG -65 to +150 C Operating and Storage Temperature Range Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* SB120 - SB160 SENSITRON SEMICONDUCTOR 1.0A SCHOTTKY BARRIER RECTIFIER IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 0.5 0 25 50 75 100 125 20 SB120 - SB140 10 SB150 - SB160 1.0 Tj = 25C IF Pulse Width = 300s 0.1 150 0.1 TL, LEAD TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 0.5 0.9 1.3 1.7 2.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 40 Single Half Sine-Wave (JEDEC Method) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) Tj = 150C 30 20 10 Tj = 25C f = 1.0MHz SB120 - SB140 100 SB150 - SB160 10 0 1 10 0.1 100 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) I(O), AVERAGE FORWARD CURRENT (A) Data Sheet 3061, Rev. -- 100 10 Tj = 100C 1.0 Tj = 75C 0.1 0.01 0.001 Tj = 25C 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* SENSITRON SEMICONDUCTOR 3061, - - SB160 SB120 1.0A SCHOTTKY BARRIER RECTIFIER DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. * * * * * * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0*