SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Data Sheet 3061, Rev. —
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability A B A
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
DO-41
Dim Min Max Min Max
A 25.4 — 1.000 —
B 4.06 5.21 0.159 0.205
C 0.71 0.864 0.028 0.034
D 2.00 2.72 0.079 0.107
In mm In inch
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol SB120 SB130 SB140 SB150 SB160 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 20 30 40 50 60 V
RMS Reverse Voltage VR(RMS) 14 21 28 35 42 V
Average Rectified Output Current (Note 1) @TL = 100°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 40 A
Forward Voltage @IF = 1.0A VFM 0.50 0.70 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 0.5
10 mA
Typical Junction Capacitance (Note 2) Cj 110 80 pF
Typical Thermal Resistance Junction to Lead RθJL 15 K/W
Typical Thermal Resistance Junction to Ambient (Note 1) RθJA 50 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
N
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
ote: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
SENSITRON
SEMICONDUCTOR
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SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Data Sheet 3061, Rev. —
SENSITRON
SEMICONDUCTOR
10
20
30
40
0
1 10 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half Sine-Wave
(JEDEC Method)
T = 150 C
j°
10
100
1000
0.1 1 10 100
C , JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
SB150 - SB160
SB120 - SB140
T = 25 C
f = 1.0MHz
j°
0 20 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 100 C
j°
T = 75 C
j°
T = 25 C
j°
100
10
1.0
0.1
0.01
0.001
0.1
1.0
10
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
20
0.50.1 0.9 1.3 1.7 2.1
T = 25 C
j°
I Pulse Width = 300 s
Fµ
SB150-SB160
SB120 - SB140
0
0.5
1.0
25 50 75 100 125 150
I AVERAGE FORWARD CURRENT (A)
(O),
T , LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L°
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1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
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party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
SENSITRON
SEMICONDUCTOR
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SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
3061,-
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