2SK2534 Ordering number : EN8612 SANYO Semiconductors DATA SHEET 2SK2534 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit 250 V 30 V 16 A Drain Current (Pulse) ID IDP PW10s, duty cycle1% 64 A Allowable Power Dissipation PD Tc=25C 50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs Conditions Ratings min typ max Unit ID=1mA, VGS=0V 250 V IG= 100A, VDS=0V 30 V VDS=250V, VGS=0V 1.0 mA VGS= 25V, VDS=0V 10 A 3.0 V VDS=10V, ID=1mA 2.0 VDS=10V, ID=8A 8.5 14 S Continued on next page. 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If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408QA TI IM TC-00001320 No.8612-1/3 2SK2534 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on) Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Diode Forward Voltage VSD Diode Reverse Recovery Time trr Ratings Conditions min typ ID=8A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz Unit max 130 180 m 1950 pF 455 pF VDS=20V, f=1MHz See specified Test Circuit. 185 pF 28 ns See specified Test Circuit. 96 ns See specified Test Circuit. 500 ns See specified Test Circuit. 150 ns IS=16A, VGS=0V IS=16A, di / dt=100A / s 180 Package Dimensions 1.0 1.5 V ns Switching Time Test Circuit unit : mm (typ) 7002-001 VDD=100V VIN 10V 0V 0.6 D 1 2 G 0.3 0.6 1.0 2.54 6.2 5.2 5.08 2SK2534 1 : Gate 2 : Source 3 : Drain 7.8 2.5 10.0 6.0 VOUT PW=10s D.C.1% 0.7 1.2 4.2 1.0 2.54 ID=8A RL=12.5 VIN 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 P.G 50 S SANYO : ZP ASO Drain Current, ID -- A 100 7 5 IDP=64A 3 2 DC op er 3 2 ati on 1.0 7 5 3 2 PW10s 1 0 10 s 0 s 1m s 1 10 0ms 0m s ID=16A 10 7 5 Operation in this area is limited by RDS(on). Tc=25C Single pulse 0.1 0.1 2 3 5 7 1.0 PD -- Tc 60 Allowable Power Dissipation, PD -- W 2 50 40 30 20 10 0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V 2 3 5 IT11458 0 20 40 60 80 100 120 Case Temperature, Ta -- C 140 160 IT11459 No.8612-2/3 2SK2534 Note on usage : Since the 2SK2534 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No.8612-3/3