2N6517 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 1
August 2010
2N6517
NPN Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• Collector Dissipation: PC(max) = 625mW
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 2N6517
2N6517C
350
400
V
V
VCEO Collector-Emitter Voltage 2N6517
2N6517C
350
400
V
V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Conditions Min. Max. Units
BVCBO Collector-Base Breakdown Voltage
2N6517
2N6517C
IC = 100µA, IE = 0
IC = 100µA, IE = 0
350
400
V
V
BVCEO Collector-Emitter Breakdown Voltage *
2N6517
2N6517C
IC = 1mA, IB = 0
IC = 1mA, IB = 0
350
400
V
V
BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V
ICBO Collector Cut-off Current VCB = 250V, IE = 0 50 nA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 50 nA
hFE DC Current Gain *
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517C
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 30mA
VCE = 10V, IC = 50mA
VCE = 10V, IC = 100mA
VCE = 10V, IC = 5mA
20
30
30
20
15
50
200
200
200
1. Emitter 2. Base 3. Collector
TO-92
1
2N6517 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 2
Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Symbol Parameter Conditions Min. Max. Units
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
IC = 20mA, IB = 2mA
IC = 30mA, IB = 3mA
IC = 50mA, IB = 5mA
0.3
0.35
0.5
1
V
V
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
IC = 20mA, IB = 2mA
IC = 30mA, IB = 3mA
0.75
0.85
0.9
V
V
V
Cob Output Capatitance VCB = 20V, IE = 0, f = 1MHz 6 pF
fTCurrent Gain Bandwidth Product * IC = 10mA, VCE = 20V, f = 20MHz 40 200 MHz
VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 10V 2 V
2N6517 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Saturation Voltage
Figure 3. Saturation Voltage Figure 4. Emitter Cut Off Current
Figure 5. Collector CutOff Current Figure 6. Base-Emitter On Voltage
1 10 100 1000
0.1
1
10
100
1000
VCE = 10V
Ta = 25oC
Ta = 75oC
Ta = 125oC
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
Ta = 25oC
Ta = 75oC
IC = 10 IB
Ta = 125oC
VCE(sat) [V], SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
1 10 100 1000
0.1
1
Ta = 125oC
Ta = 75oC
Ta = 25oC
IC = 10 IB
VBE(sat) [V], SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
123456
1E-3
0.01
0.1
1
10
100
Ta = 125oC
Ta = 75oC
Ta = 25oC
IEBO [nA], Emitter Cut Off Current
VEB [V], EMITTER-BASE VOLTAGE
50 100 150 200 250 300 350
0.1
1
10
100
1000
10000
Ta = 125oC
Ta = 75oC
Ta = 25oC
ICBO [nA], Collector CutOff Current
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 10V
Ta = 25oC
VBE(on) [V], BASE-EMITTER ON VOLTAGE
IC [mA], COLLECTOR CURRENT
2N6517 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 4
Typical Performance Characteristics (Continued)
Figure 7. Output Capacitance Figure 8. Input Capacitance
Figure 9. Current Gain Bandwidth Product Figure 10. Resistive Load Switching
Figure 11. Resistive Load Switching
0 20406080100
1.0
1.2
1.4
1.6
1.8
2.0
f = 1MHz
CCB [pF], Collector-Base Capacitance
VCB [V], COLLECTOR-BASE VOLTAGE
1.01.52.02.53.03.54.04.55.0
20
25
30
35
40
45
50
f = 1MHz
CEB [pF], Emitter-Base Capacitance
VEB [V], EMITTER-BASE VOLTAGE
1 10 100
1
10
100
fT [MHz], Current Gain Bandwidth
IC [mA], COLLECTOR CURRENT
10 100
10
100
1000
tON
td
tr
VCC=100V
IC=5IB1=-5IB2, Ta=25oC
td, tr & tON [ns], SWITCHING TIME
IC [mA], COLLECTOR CURRENT
10 100
10
100
1000
10000
tOFF
tf
tstg
VCC=100V
IC=5IB1=-5IB2, Ta=25oC
tstg, tf & tOFF [ns], SWITCHING TIME
IC [mA], COLLECTOR CURRENT
2N6517 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 5
Physical Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I49
