8720C–SEEPR–7/12
Features
Low-voltage and standard-voltage operation
1.7V (VCC = 1.7V to 3.6V)
2.5V (VCC = 2.5V to 5.5V)
Internally organized as 65,536 x 8
2-wire serial interface
Schmitt Triggers, filtered inputs for noise suppression
Bidirectional data transfer protocol
400kHz (1.7V) and 1MHz (2.5V, 5.5V) compatibility
Write Protect pin for hardware data protection
128-byte page write mode
partial page writes allowed
Random and sequential read modes
Self-timed write cycle (5ms max)
High reliability
Endurance: 1,000,000 write cycles
Data retention: 40 years
Green package options (Pb/Halide-free/RoHS Compliant)
8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP, 8-pad UDFN, and
8-ball VFBGA packages
Die sale options: wafer form and tape and reel available
Description
The Atmel® AT24C512C provides 524,288 bits of Serial Electrically Erasable and
Programmable Read-Only Memory (EEPROM) organized as 65,536 words of eight bits
each. The cascadable feature of the device allows up to eight devices to share a
common 2-wire bus. The device is optimized for use in many industrial and commercial
applications where low-power and low-voltage operation are essential. The devices are
available in space-saving 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP,
8-pad UDFN, and 8-ball VFBGA packages. In addition, the entire family is available in
1.7V (1.7V to 3.6V) and 2.5V (2.5V to 5.5V) versions.
Atmel AT24C512C
I2C-Compatiable (2-wire) Serial EEPROM
512-Kbit (65,536 x 8)
DATASHEET
2
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
1. Pin Configurations and Pinouts
Figure 1. Pin Configurations
2. Absolute Maximum Ratings*
Pin Name Function
A0 - A2Address Inputs
GND Ground
SDA Serial Data
SCL Serial Clock Input
WP Write Protect
VCC Power Supply
1
2
3
4
8
7
6
5
A0
A1
A2
GND
VCC
WP
SCL
SDA
8-lead SOIC
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
A0
A1
A2
GND
8-pad UDFN
Bottom View
VCC
WP
SCL
SDA
A0
A1
A2
GND
1
2
3
4
8
7
6
5
8-ball VFBGA
Bottom View
1
2
3
4
8
7
6
5
A0
A1
A2
GND
VCC
WP
SCL
SD
A
8-lead TSSOP
Operating Temperature . . . . . . . . . . .–55°C to +125°C
Storage Temperature . . . . . . . . . . . .–65°C to +150°C
Voltage on any pin
with respect to ground . . . . . . . . . . . . . –1.0V to +7.0V
Maximum Operating Voltage . . . . . . . . . . . . . . . 6.25V
DC Output Current. . . . . . . . . . . . . . . . . . . . . . . 5.0mA
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only, and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
3
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
3. Block Diagram
4. Pin Descriptions
Serial Clock (SCL) — The SCL input is used to positive-edge clock data into each EEPROM device and negative-edge
clock data out of each device.
Serial Data (SDA) — The SDA pin is bidirectional for serial data transfer. This pin is open-drain driven, and may be
wire-ORed with any number of other open-drain or open-collector devices.
Device Addresses (A2, A1, A0) — The A2, A1, and A0 pins are device address inputs that are hardwired or left not
connected for compatibility with other Atmel AT24Cxx devices. When the pins are hardwired, as many as eight 512K
devices may be addressed on a single bus system (see Section 7. “Device Addressing” on page 9 for more details). If
these pins are left floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to capacitive
coupling that may appear during customer applications, Atmel recommends always connecting the address pins to a
known state. When using a pull-up resistor, Atmel recommends using 10k or less.
Write Protect (WP) — The Write Protect input, when connected to GND, allows normal write operations. When WP pin
is connected directly to VCC, all write operations to the memory are inhibited. If the pin is left floating, the WP pin will be
internally pulled down to GND; however, due to capacitive coupling that may appear during customer applications, Atmel
recommends always connecting the WP pin to a known state. When using a pull-up resistor, Atmel recommends using
10k or less.
Table 4-1. Write Protect
Start
Stop
Logic
V
CC
GND
WP
SCL
SDA
A
2
A
1
A
0
Serial
Control
Logic
EN H.V. Pump/Timing
EEPROM
Data Recovery
Serial MUX
X DEC
DOUT/ACK
Logic
COMP
LOAD INC
Data Word
Addr/counter
Y DEC
R/W
DOUT
DIN
LOAD
Device
Address
Comparator
WP Pin
Status
Part of the Array Protected
Atmel AT24C512C
At VCC Full Array
At GND Normal Read/Write Operations
4
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
5. Memory Organization
Atmel AT24C512C, 512-Kbit Serial EEPROM: The 512K is internally organized as 512 pages of 128 bytes each.
Random word addressing requires a 16-bit data word address.
Table 5-1. Pin Capacitance(1)
Note: 1. This parameter is characterized and is not 100% tested.
Table 5-2. DC Characteristics
Note: 1. VIL min and VIH max are reference only, and are not tested.
Applicable over recommended operating range from TA = 25C, f = 1.0MHz, VCC = 1.7V to 3.6V or 2.5V to 5.5V
Symbol Test Condition Max Units Conditions
CI/O Input/Output Capacitance (SDA) 8 pF VI/O = 0V
CIN Input Capacitance (A0, A1, A2, SCL) 6 pF VIN = 0V
Applicable over recommended operating range from: TAI = –40C to +85C, VCC = 1.7V to 3.6V or 2.5V to 5.5V (unless
otherwise noted)
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.7 3.6 V
VCC2 Supply Voltage 2.5 5.5 V
ICC1 Supply Current VCC = 5.0V Read at 400kHz 2.0 mA
ICC2 Supply Current VCC = 5.0V Write at 400kHz 3.0 mA
ISB1 Standby Current
VCC = 1.7V
VIN = VCC or VSS
1.0 μA
VCC = 3.6V 3.0 μA
ISB2 Standby Current
VCC = 2.5V
VIN = VCC or VSS
2.0 μA
VCC = 5.5V 6.0 μA
ILI Input Leakage Current VIN = VCC or VSS 0.10 3.0 μA
ILO
Output Leakage
Current VOUT = VCC or VSS 0.05 3.0 μA
VIL Input Low Level(1) –0.6 VCC x 0.3 V
VIH Input High Level(1) VCC x 0.7 VCC + 0.5 V
VOL1 Output Low Level VCC = 1.7V IOL = 0.15mA 0.2 V
VOL2 Output Low Level VCC = 3.0V IOL = 2.1mA 0.4 V
5
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
Table 5-3. AC Characteristics
Notes: 1. This parameter is ensured by characterization only.
2. AC measurement conditions:
RL (connects to VCC): 1.3k (2.5V, 5V), 10k (1.7V)
Input pulse voltages: 0.3VCC to 0.7VCC
Input rise and fall times: 50ns
Input and output timing reference voltages: 0.5VCC
Applicable over recommended operating range from TAI = -40C to +85C, VCC = 1.7V to 3.6V or 2.5V to 5.5V (where
applicable), CL = 100pF (unless otherwise noted). Test conditions are listed in Note 2.
Symbol Parameter
1.7V 2.5V, 5.0V
UnitsMin Max Min Max
fSCL Clock Frequency, SCL 400 1000 kHz
tLOW Clock Pulse Width Low 1.3 0.4 μs
tHIGH Clock Pulse Width High 0.6 0.4 μs
tINoise Suppression Time(1) 100 50 ns
tAA Clock Low to Data Out Valid 0.05 0.9 0.05 0.55 μs
tBUF
Time the bus must be free before a new
transmission can start(1) 1.3 0.5 μs
tHD.STA Start Hold Time 0.6 0.25 μs
tSU.STA Start Set-up Time 0.6 0.25 μs
tHD.DAT Data In Hold Time 0 0 μs
tSU.DAT Data In Set-up Time 100 100 ns
tRInputs Rise Time(1) 0.3 0.3 μs
tFInputs Fall Time(1) 300 100 ns
tSU.STO Stop Set-up Time 0.6 0.25 μs
tDH Data Out Hold Time 50 50 ns
tWR Write Cycle Time 5 5 ms
Endurance(1) 25°C, Page Mode, 3.3V 1,000,000 Write Cycles
6
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
6. Device Operation
Clock and Data Transitions: The SDA pin is normally pulled high with an external device. Data on the SDA pin may
change only during SCL low time periods (see Figure 6-4 on page 8). Data changes during SCL high periods will indicate
a Start or Stop condition as defined below.
Start Condition: A high-to-low transition of SDA with SCL high is a Start condition, which must precede any other
command (see Figure 6-5 on page 8).
Stop Condition: A low-to-high transition of SDA with SCL high is a Stop condition. After a read sequence, the stop
command will place the EEPROM in a standby power mode (see Figure 6-5 on page 8).
Acknowledge: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The
EEPROM sends a zero during the ninth clock cycle to acknowledge that it has received each word.
Standby Mode: The AT24C512C features a low-power standby mode, which is enabled:
Upon power-up and
After the receipt of the Stop bit and the completion of any internal operations.
Software Reset: After an interruption in protocol, power loss, or system reset, any 2-wire part can be protocol reset by
following these steps:
1. Create a Start condition
2. Clock nine cycles
3. Create another Start condition followed by a Stop condition, as shown in Figure 6-1 below.
The device is ready for the next communication after the above steps have been completed.
Figure 6-1. Software Reset
SCL 9
Start
Bit Start
Bit
Stop
Bit
8321
SDA
Dummy Clock Cycles
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Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
Figure 6-2. Bus Timing
SCL: Serial Clock, SDA: Serial Data I/O
Figure 6-3. Write Cycle Timing
SCL: Serial Clock, SDA: Serial Data I/O
Notes: 1. The write cycle time, tWR, is the time from a valid Stop condition of a write sequence to the end of the internal
clear/write cycle.
SCL
SDA IN
SDA OUT
tF
tHIGH
tLOW tLOW
tR
tAA tDH tBUF
tSU.STO
tSU.DAT
tHD.DAT
tHD.STA
tSU.STA
tWR
(1)
Stop
Condition
Start
Condition
WORDN
ACK
8th Bit
SCL
SDA
8
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
Figure 6-4. Data Validity
Figure 6-5. Start and Stop Definition
Figure 6-6. Output Acknowledge
SDA
SCL
Data Stable Data Stable
Data
Change
SDA
SCL
Start Stop
SCL
Data In
Data Out
Start Acknowledge
9
8
1
9
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
7. Device Addressing
The 512K EEPROM requires an 8-bit device address word following a Start condition to enable the chip for a read or
write operation. The device address word consists of a mandatory ‘1010’ sequence for the first four most-significant
bits (see Figure 7-1 below). This is common to all 2-wire EEPROM devices.
The 512K uses the three device address bits, A2, A1, and A0, to allow as many as eight devices on the same bus. These
bits must compare to their corresponding hardwired input pins. The A2, A1, and A0 pins use an internal proprietary circuit
that biases them to a logic low condition if the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high,
and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a valid compare is not made, the device will
return to a standby state.
Figure 7-1. Device Address
8. Write Operations
Byte Write: A Byte Write operation requires two 8-bit data word addresses following the device address word and
acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero, and then the part is to
receive an 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero. The addressing
device, such as a microcontroller, then must terminate the write sequence with a Stop condition. At this time, the
EEPROM enters an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write
cycle, and the EEPROM will not respond until the write is complete (see Figure 9-1 on page 10).
Page Write: The 512-Kbit EEPROM is capable of 128-byte page writes.
A Page Write is initiated the same way as a byte write, but the microcontroller does not send a Stop condition after the
first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller
can transmit up to 127 more data words. The EEPROM will respond with a zero after each data word received. The
microcontroller must terminate the page write sequence with a Stop condition (see Figure 9-2 on page 10) and the
internally timed write cycle will begin.
The lower seven bits of the data word address are internally incremented following the receipt of each data word. The
higher data word address bits are not incremented, retaining the memory page row location. When the word address,
internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more
than 128 data words are transmitted to the EEPROM, the data word address will roll-over, and the previous data will be
overwritten. The address roll over during write is from the last byte of the current page to the first byte of the same page.
Acknowledge Polling: Once the internally-timed write cycle has started and the EEPROM inputs are disabled,
Acknowledge Polling can be initiated. This involves sending a Start condition followed by the device address word. The
read/write select bit is representative of the operation desired. Only if the internal write cycle has completed will the
EEPROM respond with a zero, allowing the read or write sequence to continue.
Data Security: AT24C512C has a hardware data protection scheme that allows the user to write protect the entire
memory when the WP pin is at VCC.
MSB LSB
1 0 1 0 A2 A1 A0 R/W
10
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
9. Read Operations
Read operations are initiated the same way as write operations with the exception that the read/write select bit in the
device address word is set to one. There are three types of read operations: Current Address Read, Random Address
Read, and Sequential Read.
Current Address Read: The internal data word address counter maintains the last address accessed during the last
read or write operation, incremented by one. This address stays valid between operations as long as the chip power is
maintained. The address roll over during read is from the last byte of the last memory page to the first byte of the first
page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the
current address data word is serially clocked out on the SDA line. The microcontroller does not respond with an zero, but
does generate a following Stop condition (see Figure 9-3 on page 11).
Random Read: A Random Read requires an initial byte write sequence to load in the data word address. This is known
as a “dummy write” operation. Once the device address word and data word address are clocked in and acknowledged
by the EEPROM, the microcontroller must generate another Start condition. The microcontroller now initiates a current
address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device
address and serially clocks out the data word. The microcontroller does not respond with a zero, but does generate a
following Stop condition (see
Figure 9-4 on page 11).
Sequential Read: Sequential Reads are initiated by either a Current Address Read or a Random Address Read. After
the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an
acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the
memory address limit is reached, the data word address will roll-over and the sequential read will continue. The
Sequential Read operation is terminated when the microcontroller does not respond with a zero but does generate a
following Stop condition (see Figure 9-5 on page 11).
Figure 9-1. Byte Write
Figure 9-2. Page Write
S
T
A
R
T
W
R
I
T
E
S
T
O
P
Device
Address
First
Word Address
Second
Word Address Data
SDA Line
M
S
B
A
C
K
R
/
W
A
C
K
A
C
K
A
C
K
SDA Line
S
T
A
R
T
W
R
I
T
E
Device
Address
First
Word Address (n)
Second
Word Address (n) Data (n) Data (n + x)
M
S
B
A
C
K
R
/
W
A
C
K
A
C
K
A
C
K
A
C
K
S
T
O
P
11
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
Figure 9-3. Current Address Read
Figure 9-4. Random Read
Figure 9-5. Sequential Read
Data
Device
Address
S
T
A
R
T
R
E
A
D
S
T
O
P
A
C
K
M
S
B
R
/
W
N
O
A
C
K
SDA Line
SDA LINE
S
T
A
R
T
S
T
A
R
T
R
E
A
D
W
R
I
T
E
S
T
O
P
Device
Address
Second Word
Address
Device
Address
First Word
Address Data (n)
M
S
B
A
C
K
A
C
K
A
C
K
L
S
B
A
C
K
N
O
A
C
K
R
/
W
Dummy Write
R
/
W
SDA LINE
S
T
A
R
T
S
T
A
R
T
R
E
A
D
W
R
I
T
E
S
T
O
P
Device
Address
Second Word
Address
Device
Address
First Word
Address
Data (n + 1) Data (n + 2) Data (n + x)
Data (n)
M
S
B
A
C
K
A
C
K
A
C
K
L
S
B
A
C
K
A
C
K
A
C
K
A
C
K
N
O
A
C
K
R
/
W
Dummy Write
. . .
. . .
R
/
W
12
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
10. Ordering Code Detail
Atmel Designator
Product Family
Device Density
Device Revision
Shipping Carrier Option
Operating Voltage
Package Device Grade or
Wafer/Die Thickness
512 = 512k
B or blank = Bulk (tubes)
T = Tape and reel
M = 1.7V to 3.6V
D = 2.5V to 5.5V
H = Green, NiPdAu Lead Finish,
Industrial Temperature Range
(-40°C to +85°C)
U = Green, Matte Sn Lead Finish,
Industrial Temperature Range
(-40°C to +85°C)
11 = 11mil Wafer Thickness
Package Option
SS = JEDEC SOIC
S = EIAJ SOIC
X = TSSOP
MA = UDFN
C = VFBGA
WWU = Wafer Unsawn
AT24C512C-SSHM-B
13
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
11. Part Markings
DRAWING NO. REV.
TITLE
Catalog Number Truncation
AT24C512C Truncation Code: 2FC
AAAAAAAA
2FC% @
ATMLHYWW
8-lead SOIC 8-lead TSSOP
AAAAAAA
2FC% @
ATHYWW
8-lead UDFN
2FC
H%@
YXX
2.0 x 3.0 mm Body
8-lead EIAJ
AAAAAAAA
2FC% @
ATMLHYWW
1.5 x 2.0 mm Body
8-ball VFBGA
PIN 1
2FCU
YMXX
Note 2: Package drawings are not to scale
Note 1: designates pin 1
Package Mark Contact:
DL-CSO-Assy_eng@atmel.com
24C512CSM D
7/11/12
24C512CSM, AT24C512C Package Marking Information
Date Codes Voltages
Y = Year M = Month WW = Work Week of Assembly % = Minimum Voltage
2: 2012 6: 2016 A: January 02: Week 2 D: 2.5V min
3: 2013 7: 2017 B: February 04: Week 4 M: 1.7V min
4: 2014 8: 2018 ... ...
5: 2015 9: 2019 L: December 52: Week 52
Country of Assembly Lot Number Grade/Lead Finish Material
@ = Country of Assembly AAA...A = Atmel Wafer Lot Number U: Industrial/Matte Tin
H: Industrial/NiPdAu
Trace Code Atmel Truncation
XX = Trace Code (Atmel Lot Numbers Correspond to Code) AT: Atmel
Example: AA, AB.... YZ, ZZ ATM: Atmel
ATML: Atmel
AT24C512C: Package Marking Information
14
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
12. Ordering Codes
Atmel AT24C512C Ordering Information
Notes: 1. B = Bulk
2. T = Tape and reel
SOIC = 4K per reel,
TSSOP, UDFN, and VFBGA = 5K per reel
3. For wafer sales, please contact Atmel sales.
Ordering Code Voltage Package Operation Range
AT24C512C-SSHM-B(1) (NiPdAu Lead Finish) 1.7V to 3.6V 8S1
Lead-free/Halogen-free/
Industrial Temperature
(40 to 85C)
AT24C512C-SSHM-T(2) (NiPdAu Lead Finish) 1.7V to 3.6V 8S1
AT24C512C-SSHD-B(1) (NiPdAu Lead Finish) 2.5V to 5.5V 8S1
AT24C512C-SSHD-T(2) (NiPdAu Lead Finish) 2.5V to 5.5V 8S1
AT24C512C-SHM-B(1) (NiPdAu Lead Finish) 1.7V to 3.6V 8S2
AT24C512C-SHM-T(2) (NiPdAu Lead Finish) 1.7V to 3.6V 8S2
AT24C512C-SHD-B(1) (NiPdAu Lead Finish) 2.5V to 5.5V 8S2
AT24C512C-SHD-T(2) (NiPdAu Lead Finish) 2.5V to 5.5V 8S2
AT24C512C-XHM-B(1) (NiPdAu Lead Finish) 1.7V to 3.6V 8X
AT24C512C-XHM-T(2) (NiPdAu Lead Finish) 1.7V to 3.6V 8X
AT24C512C-XHD-B(1) (NiPdAu Lead Finish) 2.5V to 5.5V 8X
AT24C512C-XHD-T(2) (NiPdAu Lead Finish) 2.5V to 5.5V 8X
AT24C512C-MAHM-T(2) (NiPdAu Lead Finish) 1.7V to 3.6V 8MA2
AT24C512C-CUM-T(2) 1.7V to 3.6V 8U2-1
AT24C512C-WWU11M(3) 1.7V to 3.6V Die Sale Industrial Temperature
(40 to 85C)
Package Type
8S1 8-lead, 0.150” wide, Plastic Gull Wing, Small Outline (JEDEC SOIC)
8S2 8-lead, 0.208” wide, Plastic Gull Wing, Small Outline (EIAJ SOIC)
8X 8-lead, 4.4mm body, Plastic Thin Shrink Small Outline (TSSOP)
8MA2 8-pad, 2.00mm x 3.00mm body, 0.50mm Pitch, Ultra Thin Dual No Lead (UDFN)
8U2-1 8-ball, 2.35 x 3.73mm body, 0.75mm pitch, Small Die Ball Grid Array (VFBGA)
15
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
13. Package Information
13.1 8S1 — 8-lead JEDEC SOIC
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 0.25
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 0.25
D 4.80 5.05
E1 3.81 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
Ø
Ø
Ø
E
1
N
TOP VIEW
C
E1
END VIEW
A
b
L
A1
e
D
SIDE VIEW
Package Drawing Contact:
packagedrawings@atmel.com
8S1 G
6/22/11
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) SWB
16
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
13.2 8S2 — 8-lead EIAJ SOIC
TITLE DRAWING NO. GPC REV.
Package Drawing Contact:
packagedrawings@atmel.com
8S2 STN F
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
4/15/08
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. Determines the true geometric position.
4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 4
C 0.15 0.35 4
D 5.13 5.35
E1 5.18 5.40 2
E 7.70 8.26
L 0.51 0.85
q
e 1.27 BSC 3
q
q
1
1
N
N
E
E
TOP VIEW
TOP VIEW
C
C
E1
E1
END VIEW
END VIEW
A
A
b
b
L
L
A1
A1
e
e
D
D
SIDE VIEW
SIDE VIEW
17
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
13.3 8X — 8-lead TSSOP
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A - - 1.20
A1 0.05 - 0.15
A2 0.80 1.00 1.05
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
b 0.19 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
C 0.09 - 0.20
Side View
End View
Top View
A2
A
L
L1
D
1
E1
N
b
Pin 1 indicator
this corner
E
e
Notes: 1. This drawing is for general information only.
Refer to JEDEC Drawing MO-153, Variation AA, for proper
dimensions, tolerances, datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate
burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15mm (0.006in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions.
Inter-lead Flash and protrusions shall not exceed 0.25mm
(0.010in) per side.
4. Dimension b does not include Dambar protrusion.
Allowable Dambar protrusion shall be 0.08mm total in excess
of the b dimension at maximum material condition. Dambar
cannot be located on the lower radius of the foot. Minimum
space between protrusion and adjacent lead is 0.07mm.
5. Dimension D and E1 to be determined at Datum Plane H.
Package Drawing Contact:
packagedrawings@atmel.com
8X D
6/22/11
8X, 8-lead 4.4mm Body, Plastic Thin
Shrink Small Outline Package (TSSOP) TNR
C
A1
18
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
13.4 8MA2 — 8-pad UDFN
TITLE DRAWING NO. GPC REV.
Package Drawing Contact:
packagedrawings@atmel.com
8MA2YNZ B
8MA2, 8-pad, 2 x 3 x 0.6 mm Body, Thermally
Enhanced Plastic Ultra Thin Dual Flat No
Lead Package (UDFN)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 2.00 BSC
E 3.00 BSC
D2 1.40 1.50 1.60
E2 1.20 1.30 1.40
A 0.50 0.55 0.60
A1 0.0 0.02 0.05
A2 0.55
C 0.152 REF
L 0.30 0.35 0.40
e 0.50 BSC
b 0.18 0.25 0.30 3
K 0.20 – –
7/15/11
D2
E2
E
e (6x)
L (8x)
b (8x)
Pin#1 ID
A
A1
A2
Pin 1 ID
D
C
K
8
7
6
5
1
2
3
4
1
2
3
4
8
7
6
5
19
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
13.5 8U2-1 — 8-ball VFBGA
DRAWING NO. REV. TITLE GPC
Package Drawing Contact:
packagedrawings@atmel.com
8U2-1 F
3/20/12
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
VFBGA Package GWW
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A 0.81 0.91 1.00
A1 0.15 0.20 0.25
A2 0.40 0.45 0.50
b 0.25 0.30 0.35
D 2.35 BSC
E 3.73 BSC
e 0.75 BSC
e1 0.74 REF
d 0.75 BSC
d1 0.80 REF
2. Dimension 'b' is measured at the maximum solder ball diameter.
1. This drawing is for general
3. Solder ball composition shall be 95.5Sn-4.0Ag-.5Cu.
Notes:
A
d
0.08 C
C
f0.10 C
A1
A2
Øb
j n
0.15
m
CAB
j n
0.08
m
C
A
(4X)
d
0.10
B
A1 BALL
PAD
CORNER
D
E
SIDE VIEW
TOP VIEW
e
(e1)
d
21
D
C
B
A
A1 BALL PAD CORNER
(d1)
8 SOLDER BALLS
BOTTOM VIEW
20
Atmel AT24C512C [DATASHEET]
8720C–SEEPR–7/12
14. Revision History
Doc. Rev. Date Comments
8720C 07/2012
Update part markings.
Update package drawings.
Update template.
8720B 12/2010 Replace part markings with single page standard marking.
Remove five ordering code variations.
8720A 09/2010 Initial document release.
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