Low turn-on voltage
Fast switching
PN junction guard ring for transient and ESD protection
High speed switching applications
Circuit protecting
Voltage clamping
SOT-23
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
VRRM
VRWM
VR
40 V
Forward Continuous Current IFM 200 mA
Power Dissipation Pd 350 mW
Forward Surge Current IFSM 600 mA
Thermal Resistance, Junction to Ambient RθjA 357 °C/W
Operating Junction Temperature Range Tj -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
BAS40 Series
Schottky Diode
Applications
Features
•
•
•
•
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Maximum Ratings (TA = 25°C unless otherwise noted)
1/3
Schematic Diagram and Marking
BAS40 BAS40-04
BAS40-06
BAS40-05
Marking: 43 Marking: 44
Marking: 45 Marking: 46
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 40 - - V IRS= 10μA
Forward Voltage VF - -
380
1000
mV
tP<300μs,IF=1.0mA
tP<300μs,IF=40mA
Reverse Leakage Current IR - 20 200 nA tP<300μs,VR=30V
Junction Capacitance Cj - 4.0 5.0 pF VR=0V,f=1.0MHz
Reverse Recovery Time trr - - 5.0 ns
IF=IR=10mA to
IR=1.0mA,RL=100Ω
Electrical Characteristics (TA = 25°C unless otherwise noted)
Typical Characteristic Curves(TA = 25°C unless otherwise noted)
2/3
BAS40 Series
Schottky Diode
Sugguested Soldering Pad
Unit : mm
SOT-23
Dim Min Max
A 2.70 3.10
B 1.10 1.50
C 1.0 Typical
D 0.4 Typical
E 0.35 0.48
G 1.80 2.00
H 0.02 0.1
J 0.1 Typical
K 2.20 2.60
All Dimensions in mm
A
B
C
D
E
J
H
K
G
0.90
0.80
2.00
0.95 0.95
Package Outline Dimensions
3/3 Doc.USBAS40xYD1.0
www.goodarksemi.com
SOT-23
BAS40 Series
Schottky Diode
