InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors (0.9 to 1.67 m / 2.55 m) The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability. Signal processing circuits on the CMOS chip can be selected from two conversion efficiencies (CE) by external voltage. The image sensor operates over a wide dynamic range when CE=16 nV/e- and delivers high gain when CE=320 nV/e-. Features Applications Wide dynamic range Near infrared multichannel spectrophotometry Low noise and low dark current Radiation thermometry Two selectable conversion efficiencies Non-destructive inspection Anti-saturation circuit Related products CDS circuit *1 InGaAs multichannel detector head C8061-01, C8062-01 Offset compensation circuit Simple operation (by built-in timing generator) *2 Multichannel detector head controller C7557-01 High resolution: 25 m pitch (512 ch) Low cross-talk 256 ch: 1 video line 512 ch: 2 video lines *1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (programmable logic device) are used to input the required timing signals. However, the G9211 to G9214/G9205 to G9208 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. www.hamamatsu.com 1 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Selection guide Type no. Active area size (mm) Cooling G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9206-256W G9207-256W G9208-256W One-stage TE-cooled Two-stage TE-cooled Applicable multichannel detector head Number of total pixels Number of active pixels 12.8 x 0.25 12.8 x 0.50 12.8 x 0.25 256 512 256 512 256 512 256 512 C8061-01 256 256 C8062-01 Shape specifications Type no. G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9206-256W G9207-256W G9208-256W Pixel size [m (H) x m (V)] 50 x 250 25 x 250 50 x 500 25 x 500 Pixel size (m) 50 25 50 25 50 x 250 50 Details of active area (unit: m) Window material 28-pin metal (refer to the dimensionl outline) Sapphire glass with antireflective coating Block diagram CLK RESET Timing generator V Package Vdd Vss INP Vref Bias generator AD-TRIG Shift register Address switch Readout circuit Charge amp + sample-and-hold circuit CMOS IC VIDEO x H InGaAs photodiode array Number of pixels 256 512 x 30 10 H 50 25 V 250 Thermoelectric cooler + Thermoelectric cooler - Temperature monitor 500 KMIRC0033EA 250 500 KMIRC0040EA 2 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Absolute maximum ratings Parameter Operating temperature*3 Storage temperature*3 Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Symbol Topr Tstg Vdd, INP, Vref V V(RES) Vcsel Condition Chip temperature Chip temperature Ta=25 C Ta=25 C Ta=25 C Ta=25 C Min. -40 -40 -0.3 -0.3 -0.3 -0.3 Typ. - Max. +70 +85 +6 +6 +6 +6 Unit C C V V V V *3: Non condensation Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Recommended terminal voltage Parameter Symbol Vdd Vref INP Vss Supply voltage Element bias Ground Clock pulse voltage Reset pulse voltage High Low High Low V V(RES) Min. 4.9 3.5 Vdd - 0.5 0 Vdd - 0.5 0 Typ. 5.0 1.26 4.5 0 Vdd 0 Vdd 0 Max. 5.1 4.6 Vdd + 0.5 0.4 Vdd + 0.5 0.4 Unit V V V V Min. 0.1 0.0125 Vref - Typ. 45 90 f/8 4.5 1.26 Vref Max. 50 100 1 1 4 0.5 INP - Unit V V Electrical characteristics (Ta=25 C) Parameter Consumption current Clock frequency Video data rate Video output voltage Output offset voltage High Low Symbol 256 pixels I(Vdd) 512 pixels I(Vref) I(INP) f fV VH VL Vos mA mA mA MHz MHz V V V 3 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Electrical and optical characteristics (Ta=25 C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, Vf=5 V, CE=16 nV/e-, f=250 kHz) Parameter Symbol G9211 to G9214 series*4 Min. Typ. Max. Spectral response range 0.9 - 1.7 Peak sensitivity wavelength p - 1.55 - Photo sensitivity (=p) S 0.85 0.95 - G9205 to G9208 series*5 Type No. Min. Typ. Max. G9205 0.9 1.85 G9206 0.9 2.05 G9207 0.9 2.25 G9208 0.9 2.55 G9205 1.75 G9206 1.95 G9207 2.05 G9208 2.3 G9205 0.9 1.1 G9206 1.0 1.2 G9207 1.0 1.2 G9208 0.9 1.3 16 5 10 3 187.5 180 300 16666 5 Conversion efficiency CE 16 Photo response non-uniformity*6 PRNU 3 5 Saturation voltage Vsat 3 Saturation charge Qsat 187.5 Readout noise*7 N 180 300 Dynamic range D 16666 8 Defective pixels* 1 *4: T=25 C *5: T=-20 C *6: 50% of saturation, after dark output subtraction, excluding first and last pixels G9211 to G9214 series: integration time=10 ms, G9205 to G9208 series: integration time=3 ms *7: G9211 to G9214 series: integration time=10 ms, G9205 to G9208 series: integration time=0.8 ms *8: Pixels with photo response non-uniformity, readout noise or dark current higher than the maximum value Unit m m A/W nV/e% V MeV rms % Dark output characteristics (CE=16 nV/e-, G9211 to G9214 series: T=25 C, G9205 to G9208 series: T=-20 C) Parameter G9211-256S G9212-512S G9213-256S G9214-512S Dark output (dark output non-uniformity) G9205-256W G9206-256W G9207-256W G9208-256W G9211-256S G9212-512S G9213-256S G9214-512S Dark current G9205-256W G9206-256W G9207-256W G9208-256W Symbol VD ID Min. -1 -0.5 -2 -0.5 -6 -12 -80 -200 -10 -5 -20 -5 -60 -120 -800 -2000 Typ. 0.2 0.1 0.4 0.1 1.5 3 20 50 2 1 4 1 15 30 200 500 Max. 1 0.5 2 0.5 6 12 80 200 10 5 20 5 60 120 800 2000 Unit V/s pA 4 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Equivalent circuit 1 pixel High gain Low gain Shift register Offset compensation circuit CDS VIDEO Photodiode AD-TRIG Timing generator Vdd INP Vss CLK RESET Vref External input KMIRC0010ED 5 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Timing chart CLK (input) RESET (input) 8 x N clocks (Readout time) 2 clocks Integration time 8 clocks 8 clocks 10 clocks min. TRIGGER (output) VIDEO (output) 1 ch (n-1) ch 2 ch n ch KMIRC0016EA tr(clk) tf(clk) CLK t1 tr(RES) RESET t2 Blank period (10 clocks or more) tf(RES) Integration time Actual integration time AD_TRIG Reset Output t3 VIDEO Readout time for channel 1 Readout time for channel 2 Readout time for last channel KACCC0224JB Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times Reset pulse width Reset pulse rise/fall times Reset (rise) timing Reset (fall) timing Output settling time Symbol tpw(clk) tr(clk), tf(clk) tpw(RES) tr(RES), tf(RES) t1 t2 t3 Min. 0.1 100 0 6000 0 50 50 - Typ. 20 20 - Max. 4 100 100 600 Unit MHz ns ns ns ns ns ns ns 6 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Spectral response (Typ.) 1.5 Photo sensitivity (A/W) T=25 C T=-10 C T=-20 C G9201 G9204 G9211 G9214 G9414 1.0 G9207-256W G9208-256W to G9206-256W series to series series G9205-256W 0.5 0 0.5 2.5 2.0 1.5 1.0 Wavelength (m) 3.0 KMIRB0033EC Spectral transmittance characteristic of window material (typical example) (Ta=25 C) 100 Transmittance (%) 95 90 85 80 75 70 0.5 1.0 1.5 2.0 2.5 3.0 Wavelength (m) KMIRB0049EA 7 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Pin connection (top view) 256 PIXELS 512 PIXELS Cf SELECT RESET TE - TE + AD-TRIG-EVEN THERM THERM CASE CLK-EVEN AD-TRIG Vdd Vss INP CLK THERM THERM CASE RESET-EVEN TE + Vref Cf SELECT RESET-ODD TE AD-TRIG-ODD Vdd Vss INP CLK-ODD Vref VIDEO VIDEO-EVEN VIDEO-ODD KMIRC0013EA Terminal name CLK Input/Output Input (CMOS logic compatible) RESET Input (CMOS logic compatible) Vdd Vss INP Input Input Input Cf SELECT Input CASE THERM Output TE+, TE- Input AD-TRIG VIDEO Vref Output Output Input Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. The width of the reset pulse is integration time. Supply voltage for operating the signal processing circuit in the CMOS chip Ground for the signal processing circuit in the CMOS chip Reset voltage for the charge amplifier array in the CMOS chip Voltage that determines the conversion efficiency in the CMOS chip. Low gain (CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V. This terminal is electrically connected to the package. Thermistor for monitoring temperature inside the package Power supply terminal for the thermoelectric cooler that cools the photodiode array. No connection for room temperature operation type. Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Reset voltage for the offset compensation circuit in the CMOS chip Connection example InGaAs linear image sensor CLK RESET Buffer Vref VIDEO Vdd Cf SELECT INP AD-TRIG Vss Buffer KMIRC0012EA 8 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Specifications of TE-cooler (Ta=25 C, Vdd=5 V, INP=4.5 V) Parameter Condition TE-cooler allowable current TE-cooler allowable voltage Temperature difference*9 Thermistor resistance Thermistor power dissipation Symbol Ic Max. Vc Max. t Rth Pth *10 One-stage TE-cooler Min. Typ. Max. 1.8 5.0 40 4.85 5.00 5.15 0.2 Two-stage TE-cooler Min. Typ. Max. 2.8 4.0 50 4.85 5.00 5.15 0.2 Unit A V C k mW *9: This is a temperature difference between the surface of active area and the heat radiating portion of package. *10: One-stage thermoelectrically cooled type: Ic=1.4 A, two-stage thermoelectrically cooled type: Ic=2.6 A. TE-cooler temperature characteristics (Ta=25 C, Vdd=5 V, INP=4.5 V) (Typ. heatsink 0.5 C/W) Allowable voltage Temperature difference 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 0 0 1 (Typ. heatsink 0.4 C/W) 7 Allowable voltage Temperature difference 6 60 50 5 40 4 30 3 20 2 10 0 1 0 -10 0 Allowable voltage (V) 3.5 70 Temperature difference (C) 4.0 Allowable voltage (V) G9205 to G9208 series 2 -10 0 Allowable current (A) Temperature difference (C) G9211 to G9214 series 1 2 3 Allowable current (A) KMIRB0031EB KMIRB0032EB Thermistor temperature characteristic 5 Thermistor resistance () 10 104 A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1=R2 x exp B (1/T1 - 1/T2) R1: Resistance at T1 [K] R2: Resistance at T2 [K] B : B constant (B=3200 K 2%) 5 k 3% at 298 K 103 240 250 260 270 280 290 300 Temperature (K) KMIRB0041EA 9 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Dimensional outline (unit: mm) 63.5 0.15 53.3 0.15 38.1 0.15 2.54 0.15 35.6 0.15 R 1.59 27.2 0.15 20.3 0.15 1 2 14 Active area (left side 1ch) 6.4 1 1.0 0.2 C B Index mark A 15 3.0 0.15 10.2 0.15 22.9 0.15 25.4 0.15 28 2.54 0.15 0.45 0.05 Type no. A Photosensitive surface B C 5.8 0.2 3.4 0.3 G9205 to G9208 series 7.25 0.2 6.85 0.2 4.3 0.3 G9211 to G9214 series 6.15 0.2 Center accuracy of active area: 0.3 mm or less (with package center as reference point) Rotation accuracy of active area: 2 or less (with package center as reference point) Chip material: InGaAs Package material: FeNiCo alloy Lead treatment: Ni/Au plating Lead material: FeNiCo alloy Window material: sapphire Refractive index of window material: n=1.76 Window material thickness: 0.66 mm AR coat: coated (1.55 m peak) Window sealing method: brazing Cap sealing: welding KMIRA0011EB Multichannel detector head C8061-01, C8062-01 (sold separately) The C8061/C8062-01 series are high sensitivity multichannel detector heads for use with InGaAs linear image sensors. The C8061-01 is designed for the one-stage TE-cooled InGaAs linear image sensors and the C8062-01 for two-stage TE-cooled InGaAs linear image sensors. The C8061-01 and C8062-01 incorporate a low-noise driver/amplifier circuit that provide reliable operation from simple external signals. They also include a highly stable temperature controller that cools the sensor to a preset temperature level (C8061-01: Ts= -10 C, C806201: Ts= -20 C) as soon as the power is turned on. If the cooler fails and overheat occurs, the built-in protection circuit automatically turns off the power to maintain safety. Despite its compact size, the housing configuration is designed for good heat dissipation, and threaded mounting holes on the front panel allow connections to other devices such as monochromators. Controller for multichannel detector head C7557-01 is also available. The software supplied with the C7557-01 allows easy control of the multichannel detector head and data acquisition. Features Designed for InGaAs linear image sensor C8061-01: One-stage TE-cooled type C8062-01: Two-stage TE-cooled type Built-in driver/amplifier and temperature circuit Highly stable temperature controller Cooling temperature (Ta=10 to 30 C) fixed at -10 0.1 C (C8061-01), -20 0.1 C (C8062-01) Simple signal input operation Compact configuration 10 InGaAs linear image sensors G9211 to G9214/G9205 to G9208 Series Connection Shutter * timing pulse AC cable (100 to 240 V; included with the C7557-01) Trig. POWER Dedicated cable (Included with the C7557-01) SIGNAL I/O USB cable (Included with the C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0402EA Information described in this material is current as of January, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMIR1011E07 Jan. 2011 DN 11