INTERSIL FEATURES Gate Lead Available for Nulling Charge Injection Voltage @ Expansion Capability Available @ Each Channel CompleteInterfaces With Most Integrated Logic @ Low OFF power dissipation, 1 mW @ Low rosion), 102 Max on 1H5005 GENERAL DESCRIPTION These switching circuits contain two channels in one pack- age, each channel consisting of a driver circuit controlling a SPST junction FET switch. The driver interfaces DTL, TTL, of RTL togic signals for multiplexing, commutating, and D/A converter applications, which permits logic design IH5005 IH5007 2-Channel Drivers with SPST FET Switches Gate Available AND directly with the switch function. Logic 1 at the input turns the FET switch ON, and Logic 0 turns it OFF. The gate lead of the FETs has been brought out to enable the application of a referral resistor for nulling offset voltage due to charge injection. Driver points are brought out to provide for the addition of external FETs for expansion capability. . PIN CONFIGURATIONS oriver [] uf] si []2 1a[] ns D1 QU 12 1 vo NIC 0 4 " i vt 83 q il VAEF (ENABLE) D3 Cl | iNy ORIVER [ ij G3 _ a = = ~~ ae oo OUTLINE DWG DD, PD, JD Vrer(ENABLE) INA G3 OUTLINE DWG FD-2 SCHEMATIC AND LOGIC DIAGRAMS 1H5005 (rpsion) = 10Q) 1H5006 (rpsjon) = 302) 1H5007 (rpsion) = 802) ve rn ' yo a 4 yh. : tLo4 : Va (ENABLED ORDERING INFORMATION iH5005 MM FD LL Package DD 14-Pin Ceramic DIP (Special Order Onty) FD 14-Pin Flat Pack PD - 14-Pin Prastic JD 14-Pin CERDIP Temperature Range M = Military |-55C to +125C) (= Industrial (-20C to +85Cl = Commercial (0C to +70C) - Device Type NOTE: Military temperature range not available in plastic package. ve ------4 Va (ENABLEDIH5005 1H5007 DINTERSIL ABSOLUTE MAXIMUM RATINGS NOTE: Dissipation rating assumes device is mounted with ail leads . _ + welded ar soldered to printed circuit board in ambient tem- Analog Signal Voltage (Va - V7 or V" - Va) . 30V perature below 70C. For higher ternperature, derate at Total Supply Voltage (V+ ~ V7) 36V rate of 10 MW/C, Pas. Supply Voltage to Ref. Voltage (vt - Va) 25V Poe Divpation iNote) Voltage (Va - W") 750 CW Stresses above those listed under Absolute Maximum. Ratings Current (Any Terminal) 30 mA may cause permanent damage to the device. These are stress Storage Temperature -65C to +150C ratings only, and functional operation of the device at these or Operating Temperature -65C to 125C any other conditions above those indicated in the operational Lead Temperature (soldering, 10 sec.) 300C sections of the specifications is not implied. Exposure to abso- lute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Applied Voltages for al! tests V+ = +12V, V = 18V, VR = 0. Input test condition which guarantees FET switch ON or OFF as specified is used for output and power supply specifications. ABSOLUTE MAX. LIMIT SYMBOL CHARACTERISTIC TYPE = s = UNITS TEST CONDITIONS (NOTE) -55 26 125 Vinton) input VoltageON 29min] 25 min! Zu min} Volts [V7 =-12V 5 ViN(IoFF) Input Voltage--OF F | 4 1.0 0.6 | Volts | V~ =~-12V & All Circuits - = [tintony input Current 120 60 60 HA [Vin = 2.5V linworF) Input Leakage Current 0.1 0.1 2 HA LVin = 0.8V 1HS007 80 80 150 2 FOSION} Drain-Source On Resistance | IH5006 30 30 50 2 Vp = 10V, Ig = 1 mA 5 tH5005 10 10 20 Q E Hoon t Ison) | Drive Leakage Current : 2 100 nA [Vp 2 Vs =-10V 2 | Isorey Source Leakage Current 1H5006 J 100 n& [Vs = 10V, Vp = -10V x {HS007 P| lore) Drain Leakage Current 1 100 nA [Vo = 10V, Vg = -10V = Ipion) + Iscon | Drive Leakage Current 2 100 nA |Vp = Vs = -10V Istorr) Source Leakage Current +H5005 10 1000 nA | Vg = 10V, Vp = -10V IpiorF} Drain Leakage Current 4 10 1000 nA |Vp = 10V, Vs = -10V \+ Positive Power Supply 3 mA Drain Current Ir Negative Power Supply 18 mA } One Driver ON, Viy = 2.5V > Drain Current al a Reference Power Supply -14 S |'rRee Drain Current a ma P P Suppl All Circuits x + asitive Power Supply A = ' LK Leakage Current 25 Hv a _ Negative Power Supply _ h . CuK Leakage Current 25 BA Both Drivers OFF, Vin = 0.8V Reference Power Supply -25 A IRLK Leakage Current 2 # t, Turn-ON Time 1.0 1.5 HS gt 1H5005 = | toff Turn-OFF Time 2.5 3.7 hts oS See Page 3 t& | ton Turn-ON Time 1H5006 05 0.8 Ls 5 totf Turn-OFF Time 145007 1.0 15 Ls co }Pon ON Driver Power 175 mW | Both Inputs Vig = 2.5 = All Circuits 2 Pore OFF Driver Power 1 mW | Both inputs Viy = 1.0 e Gate Source Forward : ua ircui Z ' BU , = w I VGssr Voitage All Circuits 15 Volts | Ig = 1.0 mA, Vos = 9 Qo Peak-Peak Voltage +3V 3 \vpe at Expansion All Circuits 3 Volts | Vin = wf L_ & Ourputs vt = +18V, V7 = -18V, RL = 102 NOTE: (OFF) and (ON) subscript notation refers to the conduction state of the FET switch for the given test. 3-88IHS5005 1IH5007 SWITCHING TIMES {at 25C) *e* 1ov a6 ov 90% vw tors ov ourrut Varol oo ton a10v Wav Va s10V i oO -1Bv $O0 TYPICAL CHARACTERISTICS (per channel) Vin THRESHOLD vs TEMPERATURE Vin INPUT THRESHOLD (V} 0 -76 -25 25 78 125 TEMPERATURE (C) ON SUPPLY CURRENT vs TEMPERATURE 2.6 1000 = + q 1 = 22 100 5 18 = ta < ind = 14 = 3 $10 g > 10 2 = & 2 6 1 Zz 2 02 0.1 ~75 -50 -25 G 25 50 75 100 126 25 TEMPERATURE (C) Ip(orr) vs TEMPERATURE 45 65 85 9105 TEMPERATURE {C} 3-89 [INTERSIL OFF MODEL source it 17 pF (OTHERS! onan ON MODEL fon SOURCE Qmmree $= trr << <)DRAIING ton CD HE 05 pF 4 T DS(ON) VS TEMPERATURE (Normalized to 25C Value) 2 Yo Vin = 2,5V to Va =0 XN + o vv =412V e VO = -18V o uw N a 4 = x 3 I 3 0 -75 25 25 75 125 TEMPERATURE (C} OFF SUPPLY CURRENT vs TEMPERATURE 10 0.1 OFF SUPPLY CURRENT (nA) 0.01 125 25 45 65 85 105 = 125 TEMPERATURE (C)IH5005 5007 INTERSIL APPLICATION Expansion Capability |1H5005 1340 Vina Vint ov Ov Va (ENABLE) 910 Vins