September 2008 Rev 2 1/9
9
TIP35CP
TIP36CP
Complementary power transistors
Features
■Low collector-emitter saturation voltage
■Complementary NPN-PNP transistors
Applications
■General purpose
■Audio amplifier
Description
The devices are manufactured in planar
technology with “base island” layout. The
resulting transistors show exceptional high gain
performance coupled with very low saturation
voltage.
.
Figure 1. Internal schematic diagrams
Table 1. Device summary
TO-3P
1
2
3
Order code Marking Package Packaging
TIP35CP TIP35CP
TO-3P Tube
TIP36CP TIP36CP
www.st.com
Electrical ratings TIP35CP - TIP36CP
2/9
1 Electrical ratings
For PNP type voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
NPN TIP35CP
PNP TIP36CP
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 25 A
ICM Collector peak current (tP < 5 ms) 50 A
IBBase current 5 A
Ptot Total dissipation at Tcase = 25 °C 125 W
Tstg Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1 °C/W
TIP35CP - TIP36CP Electrical characteristics
3/9
2 Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICEO
Collector cut-off current
(IB = 0) VCE = 60 V 1mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 1mA
ICES
Collector cut-off current
(VBE = 0) VCE = 100 V 0.7 mA
VCEO(sus)(1)
1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.
For PNP type voltage and current are negative.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA 100 V
VCE(sat)(1) Collector-emitter
saturation voltage
IC = 15 A __ IB = 1.5 A
IC = 25 A _ IB = 5 A
1.8
4
V
V
VBE(on)(1) Base-emitter voltage IC = 15 A __ VCE = 4 V
IC = 25 A _ VCE = 4 V
2
4
V
V
hFE (1) DC current gain IC = 1.5 A_ VCE = 4 V
IC = 15 A __ VCE = 4 V
25
10 50
fTTransition frequency IC = 1 A_ VCE = 10 V
f = 1 MHz 3MHz
Electrical characteristics TIP35CP - TIP36CP
4/9
2.1 Electrical characteristic (curves)
Figure 2. DC current gain for NPN type Figure 3. DC current gain for PNP type
Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type
Figure 6. Collector-emitter saturation
voltage for NPN type
Figure 7. Collector-emitter saturation
voltage for PNP type
TIP35CP - TIP36CP Electrical characteristics
5/9
Figure 8. Base-emitter saturation
voltage for NPN type
Figure 9. Base-emitter saturation
voltage for PNP type
Figure 10. Base-emitter on voltage for
NPN type
Figure 11. Base-emitter on voltage for
PNP type
Package mechanical data TIP35CP - TIP36CP
6/9
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
TIP35CP - TIP36CP Package mechanical data
7/9
DIM. mm.
MIN. TYP MAX.
A4.6 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
P 3.10 3.30
Q5
Q1 3.80
TO-3P Mechanical data
TIP35CP - TIP36CP
9/9
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