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DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996©
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES PACKAGE DIMENSIONS
•High fT(in milimeters)
fT = 5.5 GHz TYP.
•| S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA
•High speed switching characteristics
•Equivalent NPN transistor is the 2SC2351.
•Alternative of the 2SA1424.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C)
Parameter Symbol Rating Unit
Collector to Base Voltage VCB0 −20 V
Collector to Emitter Voltage VCE0 −12 V
Emitter to Base Voltage VEB0 −3.0 V
Collector Current IC−50 mA
Total Power Dissipation PT200 mW
Junct i on Temperature Ti150 °C
Storage Temperature Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
Collector Cutoff Current ICB0 VCB = −10 V −0.1 µA
Emitter Cutoff Current IEB0 VEB = −2 V −0.1 µA
DC Current Gain hFE VCE = −10 V, I C = −15 mA 20 40 100
Gain Bandwidth Produc t fTVCE = −10 V, IC = −15 m A 4.0 5.5 GHz
Collect or Capacitanc e Cre*VCB = −10 V, IE = 0, f = 1 MHz 0.5 1 pF
Insert i on Power Gain | S21e | 2VCE = −10 V, I C = −15 mA, f = 1.0 GHz 8.0 10.0 dB
Noise Figure NF VCE = −10 V, IC = −3.0 m A, f = 1 GHz 2.0 3 dB
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank FB
Marking T93
hFE 20 to 100
2.8+0.2
_
1.5 0.65
+0.1
–0.15
2
13
2.9+0.2
_
0.950.95 0.4
+0.1
–0.05
0.4
+0.1
–0.05
Marking
0.16
+0.1
–0.06
0.3
1.1 to 1.4
0 to 0.1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93
2
2SA1978
SWITCHING CHARACTERISTICS
Vin = 1 V
TYP
Turn-on Delay Time ton (delay) 1.10 ns
Rise Time tr0.77 ns
Turn off Delay Time toff (del ay) 0.40 ns
Fall Time tf0.79 ns
SWITCHING TIME MEASUREMENT CIRCUIT
V
CC
( – )
R
C1
R
C2
R
L1
V
OUT
R
L2
V
SS
( – )
50 Ω
R
E
V
EE
( + )
R
S
Sampling
Oscilloscope
V
in
V
OUT
20 ns
t
r
t
f
t
off (delay)
t
on (delay)
V
in
Vin = 1 V, V BB = −0. 5 V, RC1 = RC2
RSRCRL1 RL2 REVEE VCC
(Ω)(Ω)(Ω)(Ω)(Ω)(V)(V)
160 1 k 200 250 2.7 k 27 26.3
Parameter Symbol Unit
3
2SA1978
TYPICAL CHARACTERISTICS
050 100 200
100
200
TOTAL POWER DISSIPATION
VS.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mV
T
A
- Ambient Temperature - ˚C
150
300
400
I
C -
Collector Current - mA
NF - Noise Figure - dB
V
CE
= 10 V
f = 1 GH
Z
NOISE FIGURE
VS.
COLLECTOR CURRENT
1
0
2
4
6
10 100
–0.01 –1–0.1 –10 –100 –1000
–0.1
–1.0
–10
–0.01 –1–0.1 –10 –100 –1000
–0.1
–1.0
–10
COLLECTOR SATURATION AND BASE TO EMITTER
VOLTAGE
VS.
COLLECTOR CURRENT
I
C -
Collector Current - mAI
C -
Collector Current - mA
V
BE
(ON) - DC Base Voltage - V
V
CE
(sat)
- Collector Saturation Voltage - V
V
BE (sat)
- Base Satturation Voltage - V
0
6
14
1 10 100
I
C -
Collector Current - mA
S
21e
2
- Insertion Power Gain - dB
INSERTION GAIN vs. COLLECTOR CURRENT
f = 1 GH
Z
2
4
8
10
12
0
6
14
1 10 100
I
C -
Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f = 1 GH
Z
2
4
8
10
12
f
T
- Gain Bandwidth Product - GH
Z
V
CE
= –10 V
I
C
= 10 · I
B
V
CE
= –1 V
V
CE
= –10 V
V
CE
= –3 V
V
CE
= –1 V
V
CE
= –10 V
V
CE
= –3 V
V
CE
= –1 V
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
4
2SA1978
1 10 100
0
0.5
1
1.5
2
100
–10
10
20
30
200 300 500 1000 3000
0
f = 1 MHz
INSERTION GAIN vs. FREQUENCY
Cre - Collector Capacitance - pF
VCBO - Collector to Base Voltage - V
|S21e|2- Insertion Power Gain - dB
f - Frequency - MHz
VCE = –10 V
IC = –15 mA
VCE = 1 V
IC = –5 mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
–0.1
100
10
1
100
10
1
–1 –10 –100 –1000
hFE - DC Current Gain
Ic - Collector Current - mA
VCE = –10 V
–0.1 –1 –10 –100 –1000
Ic - Collector Current - mA
VCE = –3 V
VCE = –2 V
VCE = –1 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
hFE - DC Current Gain
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5
2SA1978
S-PARAMETER
3 GHZ
3 GHZ
VCE = –10 V, IC = –15 mA
f = 100 MHZ
f = 100 MHZ
VCE = –1 V, IC = –5 mA
3 GH
Z
V
CE
= –10 V, I
C
= –15 mA
V
CE
= –1 V, I
C
= –5 mA
100 MH
Z
100 MH
Z
3 GH
Z
S22
S11
6
2SA1978
S-PARAMETER
(VCE = 1 V, IC = 5 mA, Zo = 50 Ω)
fS
11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.527 − 47.1 10.5 149. 0.0359 70.6 0.881 − 21.1
200 0.468 − 83.4 8.37 128. 0.0584 58.7 0.716 − 34.2
300 0.427 − 109 6.63 114. 0.0729 53.6 0.586 − 40.9
400 0.407 − 128 5.36 104. 0.0835 52.1 0.503 − 44.3
500 0.393 − 143 4.46 96.6 0.0930 52.1 0.443 − 45.8
600 0.388 − 154 3.82 90.2 0.100 53.1 0.401 − 46.7
700 0.386 − 164 3.34 84.9 0.109 53.3 0.373 − 47.7
800 0.388 − 172 2.96 80.1 0.118 54.4 0.351 − 49.1
900 0.392 − 179 2.67 75.8 0.128 55.6 0.332 − 50.1
1000 0.394 174 2.43 71.6 0.137 56.4 0.319 − 51.4
1100 0.399 169 2.24 68.1 0.147 56.9 0.306 − 53.2
1200 0.405 163 2.07 64.6 0.158 57.2 0.298 − 54.5
1300 0.410 159 1.93 61.3 0.168 57.6 0.289 − 57.0
1400 0.416 154 1.81 58.0 0.179 57.7 0.280 − 59.3
1500 0.422 150 1.71 54.9 0.190 57.7 0.274 − 61.2
1600 0.431 147 1.62 52.0 0.201 57.7 0.267 − 64.4
1700 0.438 143 1.54 49.3 0.213 57.5 0.262 − 66.7
1800 0.445 140 1.47 46.6 0.224 57.2 0.259 − 70.3
1900 0.451 136 1.41 44.1 0.236 56.8 0.252 − 73.6
2000 0.460 133 1.35 41.5 0.248 56.3 0.247 − 76.3
2100 0.465 130 1.30 39.2 0.261 55.7 0.243 − 80.2
2200 0.473 127 1.26 36.9 0.273 55.1 0.239 − 84.4
2300 0.481 125 1.21 34.8 0.286 54.3 0.234 − 87.2
2400 0.487 122 1.17 32.5 0.299 53.3 0.235 − 91.9
2500 0.493 119 1.14 30.6 0.312 52.6 0.230 − 95.9
7
2SA1978
S-PARAMETER
(VCE = 3 V, IC = 5 mA, Zo = 50 Ω)
fS
11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.558 − 37.1 11.0 153. 0.0288 74.3 915 − 16.3
200 0.485 − 67.9 9.13 133. 0.0467 83.0 784 − 27.0
300 0.423 − 92.5 7.48 119. 0.0611 58.1 670 − 33.0
400 0.381 − 111 6.21 109. 0.0703 56.5 590 − 36.0
500 0.353 − 127 5.18 101. 0.0801 56.1 531 − 37.4
600 0.339 − 140 4.47 95.1 0.0880 56.7 490 − 38.1
700 0.329 − 151 3.92 89.9 0.0938 57.5 461 − 33.8
800 0.325 − 160 3.48 84.9 0.104 57.9 438 − 39.8
900 0.325 − 169 3.14 80.7 0.113 58.7 419 − 40.4
1000 0.326 − 176 2.87 76.9 0.122 59.5 408 − 41.6
1100 0.330 177 2.64 73.0 0.131 60.5 393 − 42.8
1200 0.335 170 2.44 69.6 0.140 61.2 386 − 44.0
1300 0.339 165 2.28 66.5 0.150 61.3 377 − 45.9
1400 0.345 160 2.13 63.3 0.160 61.9 366 − 47.5
1500 0.351 155 2.01 60.2 0.170 61.9 362 − 49.0
1600 0.360 151 1.90 57.4 0.181 61.8 354 − 51.0
1700 0.366 147 1.81 54.6 0.191 61.8 349 − 53.0
1800 0.374 143 1.72 52.0 0.202 61.7 344 − 55.5
1900 0.382 140 1.65 49.5 0.213 61.3 337 − 58.1
2000 0.390 137 1.58 47.0 0.223 61.0 334 − 60.4
2100 0.396 133 1.52 44.6 0.233 60.4 328 − 63.0
2200 0.404 130 1.46 42.4 0.243 60.2 321 − 65.9
2300 0.413 127 1.41 40.2 0.251 59.4 318 − 68.3
2400 0.418 125 1.36 38.0 0.273 58.9 314 − 72.1
2500 0.427 122 1.32 35.9 0.255 58.2 303 − 74.8
8
2SA1978
S-PARAMETER
(VCE = 10 V, IC = 5 mA, Zo = 50 Ω)
fS
11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.529 − 28.8 11.3 156. 0.0234 75.4 0.939 − 12.8
200 0.548 − 53.5 9.70 138. 0.0412 67.4 0.836 − 21.7
300 0.463 − 73.9 8.20 124. 0.0530 62.1 0.739 − 27.2
400 0.400 − 91.4 6.94 114. 0.0620 59.7 0.666 − 29.9
500 0.349 − 106 5.86 106. 0.0712 58.9 0.608 − 31.4
600 0.316 − 119 5.09 100. 0.0793 59.8 0.567 − 31.9
700 0.292 − 131 4.49 94.6 0.0860 59.6 0.539 − 32.7
800 0.277 − 141 4.00 89.7 0.0938 60.4 0.516 − 33.5
900 0.267 − 152 3.63 85.4 0.101 61.3 0.498 − 34.2
1000 0.261 − 160 3.31 81.5 0.109 61.9 0.485 − 35.1
1100 0.259 − 169 3.04 77.9 0.117 62.8 0.472 − 35.9
1200 0.260 − 177 2.82 74.5 0.125 63.2 0.463 − 36.9
1300 0.263 176 2.63 71.3 0.133 63.9 0.455 − 38.4
1400 0.267 169 2.46 68.2 0.143 64.4 0.448 − 39.5
1500 0.272 164 2.32 65.3 0.152 64.5 0.440 − 40.8
1600 0.280 159 2.20 62.5 0.161 64.6 0.434 − 42.5
1700 0.286 154 2.09 59.8 0.171 64.9 0.428 − 44.1
1800 0.293 149 1.99 57.3 0.191 64.8 0.423 − 46.0
1900 0.300 145 1.90 54.8 0.192 64.4 0.417 − 47.8
2000 0.308 141 1.82 52.3 0.201 64.5 0.413 − 49.7
2100 0.315 138 1.75 49.9 0.212 63.9 0.408 − 51.9
2200 0.325 134 1.68 47.6 0.223 63.8 0.402 − 54.3
2300 0.333 131 1.63 45.5 0.235 63.2 0.397 − 56.1
2400 0.341 128 1.57 43.3 0.246 62.7 0.395 − 58.7
2500 0.348 125 1.52 41.2 0.258 62.1 0.388 − 61.0
9
2SA1978
S-PARAMETER
(VCE = 10 V, IC = 15 mA, Zo = 50 Ω)
fS
11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.354 − 46.6 17.87 147. 0.0190 74.6 866 − 18.3
200 0.290 − 81.8 13.45 125. 0.0317 70.0 708 − 26.9
300 0.247 − 107 10.35 113. 0.0420 68.4 601 − 29.8
400 0.226 − 126 8.294 104. 0.0518 68.3 539 − 30.5
500 0.215 − 141 6.799 97.8 0.0626 69.8 497 − 30.2
600 0.210 − 154 5.805 92.4 0.0720 70.8 470 − 30.1
700 0.208 − 164 5.050 88.1 0.0820 71.0 450 − 30.2
800 0.211 − 172 4.475 84.1 0.0919 70.9 435 − 30.6
900 0.215 179 4.008 80.5 0.102 70.9 423 − 31.1
1000 0.218 172 3.647 77.2 0.112 70.7 415 − 32.2
1100 0.225 166 3.345 74.2 0.121 70.9 405 − 32.9
1200 0.232 160 3.086 71.1 0.133 70.3 400 − 34.2
1300 0.237 156 2.871 68.4 0.143 70.2 394 − 35.7
1400 0.244 151 2.685 65.7 0.153 69.7 386 − 36.8
1500 0.251 147 2.532 63.2 0.165 69.2 381 − 38.4
1600 0.261 143 2.392 60.5 0.174 68.7 376 − 39.9
1700 0.268 140 2.265 58.2 0.185 68.0 373 − 41.6
1800 0.276 137 2.155 55.7 0.196 67.3 366 − 43.7
1900 0.284 134 2.059 53.5 0.207 66.5 360 − 45.7
2000 0.292 131 1.974 51.1 0.219 65.8 356 − 47.5
2100 0.299 128 1.897 49.0 0.230 65.1 350 − 49.7
2200 0.308 125 1.826 46.9 0.242 64.2 345 − 51.8
2300 0.317 123 1.763 44.7 0.252 63.3 341 − 53.8
2400 0.324 121 1.697 42.7 0.264 62.4 337 − 56.7
2500 0.332 119 1.646 40.7 0.276 61.5 331 − 58.8
2SA1978
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
W hile NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of a
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
