CY7C164A CY7C166A Features Functional Description e High speed The CY7C164A and CY7C166A are high- 20 ns performance CMOS static RAMs orga- nized as 16,384 by 4 bits. Easy memory ex- pansion is provided by an active LOW chip enable (CE) and three-state drivers. The CY7C166A has an active low output enable Output enable (OE) feature (7C166A) e CMOS for optimum speed/power Low active power 550 mw (OE) feature. Both devices have an auto- matic power-down feature, reducing the nent power power consumption by 60% when dese- 220 m lected, Writing to the device is accomplished when the chip enable (CE) and write enable TTL-compatible inputs and outputs Automatic power-down when 16K x 4 Static RAM through 1/03) is written into the memory location specified on the address pins (Ag through Aj3). Reading the device is accomplished by tak- ing chip enable (CE) LOW (and OF LOW for 7C166A), while write enable (WE) re- mains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data I/O pins. The I/O pins stay in high-impedance state when chip enable (CE) is HIGH, or output enable (OE) is HIGH for 7C166A). deselected (WE) inputs are both LOW (and the output A die coatis used to insure alpha immunity. enable (OE) is LOW for the 7C166A). Data on the four input/output pins (1/Og Logic Block Diagram Pin Configurations DIP DIP Top View Top View INPUT BUFFER Ay VO3 N As $ VO2 Ag 256 x 64x 4 a Top View As ARRAY a 10, i" he fi 299.99 Ag WO, 8 0 COLUMN cE e22EsE (08) aid < Ce le6a ONLY) C1e4A-1 C1B4A~4 Selection Guidel!] 7C164A-15 7C164A20 7C164A25 7C164A-35 7C166A15 7C164A20 7C166A-25 7C166A35 Maximum Access Time (ns) 15 20 25 35 Maximum Operating se Current (mA) Military 160 100 100 100 Maximum Standby a Current (mA) Military 40/20 40/20 40/20 30/20 Shaded area contains advanced information. Note: 1. For commercial specifications, see the CY7C164/CY7C166 datasheet. 2-167 SRAMs |S |CY7C164A ap: _ CY7C166A 3 SEMICONDUCTOR Maximum Ratings (Above which the useful life may be impaired. For user guidelines, | Output Current into Outputs (Low) ................ 20 mA not tested.) Static Discharge Voltage ........--........0000005 >2001V Storage Temperature ................- ~ 65C to +150C (per MIL-STD-883, Method 3015) Ambient Temperature with Latch-up Current 2020... 00 cece eee ee eee eee >200 mA Power Applied ...............00.00005 55C to +125C Operating Range Supply Voltage to Ground Potential ........ 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vec in High Z Statel) 200... 0.5V to +7.0V Milan 35C DSC SVE 10% DC Input Voltagel@) .. 0.02... eee eee eee 05V to +7.0V may 7 >> Cto+ = Electrical Characteristics Over the Operating Rangel4] 7C164A~15 | 7C164A20 7CI66A15 | 7C166A-20 Parameter Description Test Conditions Min. | Max. | Min. | Max. | Unit Vou Output HIGH Voltage Vec = Min., log = 4.0mA 2.4 2.4 Vv VoL Output LOW Voltage Vec = Min., Io, = 8.0 mA 0.4 0.4 Vv Vin Input HIGH Voltage 2.2 Vcc 2,2 Vcc Vv Vit Input LOW Voltagel21 -3.0 | 08 | -3.0] 08 Vv Ix Input Load Current GND < V, < Vec -10 | +10 |} -10 | +10 nA loz Output Leakage GND Vo < Vcc, ~10 +10 10 +10 pA Current Output Disabled los Output Short Vcc = Max., Vout = GND 350 350 | mA Circuit Current!) Iec Vcc Operating Supply Vec = Max., Military 160 100 mA Current lout = OmA Ispi Automatic CEIS! Max. Vcc, CE > Vin Military 40 40 mA Power Down Current Min. Duty Cycle = 100% Isp2 Automatic CEI6! Max. Vcc, Military 20 20 mA Power Down Current CE > Vig 0.3V VIN = Vcc 0.3V or VIN < 0.3V Shaded area contains advanced information. Notes: 2. Minimum voltage is equal to 3.0V for pulse durations less than 30 ns. 3. Ta is the instant on case temperature. 4. See the last page of this specification for Group A subgroup testing information.; 5. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 6. Appull-up resistor to Vcc on the CE input is required to keep the de- vice deselected during Vcc power-up, otherwise Isp will exceed values given. 2-168a CY7C164A asf: CiPRESS CY7C166A SEMICONDUCTOR Electrical Characteristics Over the Operating Range |4l(continued) 7C164A25 7C164A-35 7C166A25 7C166A35 Parameter Description Test Conditions Min. | Max. | Min. Max. Unit Vou Output HIGH Voltage | Voc = Min., Ioy = 4.0mA 2.4 2.4 Vv VoL Output LOW Voltage Vcc = Min., Io, = 8.0 mA 0.4 0.4 Vv Vin Input HIGH Voltage 2.2 Vcc 2.2 Vcc Vv Vit Input LOW Voltagel21 -3.0 | 08 ~3.0 0.8 Vv Ix Input Load Current GND < Vi < Vcc -10 +10 10 +10 pA Toz OutputLeakage Current | GND < Vo < Vcc, Output Disabled -10 +10 -10 +10 pA los Output Short Vcc = Max., Vout = GND 350 -350 mA Circuit Current!) lec Vcc Operating Supply | Vcc = Max. I Iqgur=OmA | Military 100 100 mA Current Ispi Automatic CE[61 Max. Vcc, CE > Vig Military 40 30 mA Power Down Current Min. Duty Cycle = 100% Isp2 Automatic CE[] Max. Voc, Military 20 20 mA Power Down Current CE > Vig - 0.3V Vin = Vec 0.3V or Vin < 0.3V Capacitancel! Parameter Description Test Conditions Max. Unit CIN Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cout Output Capacitance Voc = 5.0V 10 pF Note: 7. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms oureur 30 pF INCLUDING JIG AND SCOPE Equivalent to: ALL INPUT PULSES 90% Ri 4812 R1 4812 OUTPUT f 3.0V 5 pF R2 GND i 360 i 255Q Lee i INCLUDING L <5ns > = = JIGAND = = (a) SCOPE (p) C164A-6 THEVENIN EQUIVALENT 167Q OUTPUT e__-+ww 0 1.73V 2-169 C164A-7 SRAMs >|a CY7C164A ie CY7C166A SEMICONDUCTOR Switching Characteristics Over the Operating Rangel* 8! 7C164A~15 7C164A20 7C164A25 7C164A-35 7C166A-15 7C166A20 7C166A25 7C166A~35 Parameter Description Min. | Max. | Min. | Max. Min. | Max. | Min. | Max. Unit READ CYCLE tre Read Cycle Time is 20 25 35 ns taa Address to Data Valid 15 20 25 35 ns toHA Output Hold from 3 3 3 3 ns Address Change tace CE LOW to Data Valid 15 20 25 35 ns (DoE OE LOW to Data Valid 7 10 12 15 ns (7C166A) / tLZOE OE LOW to Low Z 0 3 3 3 ns (7C166A) tyzoE OE HIGH to High Z 8 8 10 12 ns (7C166A) tLZCE CE LOW to Low ZI! 3 5 5 5 ns tHZCE CE HIGH to 8 8 10 15 ns High Z1. 10] teu CE LOW to Power-Up 0 0 0 0 ns tpp CE HIGH to 15 20 20 20 ns Power-Down WRITE CYCLE!!! twe Write Cycle Time 15 20 20 25 ns tscE CE LOW to Write End 10 15 20 25 ns taw Address Set-Up to 10 15 20 25 ns Write End tHA Address Hold from 0 0 0 0 ns Write End tsa Address Set-Up to 0 0 0 0 ns Write Start tpwe WE Pulse Width 10 15 15 20 ns tsp Data Set-Up to 7 10 10 15 ns Write End typ Data Hold from 0 0 0 0 ns Write End tLZWE WE HIGH to Low ZDP} 3 5 5 5 ns tHzwe WE LOW to High ZI? 10] 7 7 7 10 ns Shaded area contains advanced information. Notes: 8. Test conditions assume signal transition time of Snsorless, timingref- 10. tyzce and tyzwe are specified with Cy, = 5 pF as in part (b) in AC Test erence levels of 1.5V, input pulse levels of 0 to 3.0V, and output load- ing of the specified Io, /Ioy and 30-pF load capacitance. At any given temperature and voltage condition, tyzcp is less than tizcs for any given device. These parameters are guaranteed and not 100% tested. 2-170 Loads, Transition is measured +500 mV from steady-state voltage. 11. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set- up and hold timing should be referenced to the rising edge of the sig- nal that terminates the write.=. CY7C164A = 7 CyPRESs CY7C166A SEMICONDUCTOR Switching Waveforms Read Cycle No. 1/12. 13] tac ADDRESS x taa | toHa DATA OUT PREVIOUS DATA VALID DATA VALID ci64a8 Read Cyele No, 2112. 14] tac CE a N. / tace OE 7C166 tpoe tyzoe toe > pt Hzce HIGH HIGH IMPEDANCE IMPEDANCE DATA OUT <eceY DATA VALID - tLzce a tpy PD Vec Icc SUPPLY 50% 50% CURRENT ISB C164A-9 Write Cycle No. 1 (WE Controlled)!11. 15] ADDRESS tpwe WE tsp tu DATA IN DATA-IN VALID tyzwe =| tLzwe | HIGH IMPEDANCE DATA VO DATA UNDEFINED SK CiI64A-10 Notes: 12. WE is HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. 13. Device is continuously selected, CE = Vj, (7C166A OE = Vy also). 15. 7C166A only: Data 1/O will be high impedance if OF = Vix. 2-171CY7C164A CY7C166A ap, CYPRESS SEMICONDUCTOR Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled)it): 15. 16] eae two ADDRESS Sv m . tsa tsce ; WX. YEZZZEEEEE HIGH IMPEDANCE DATA I/O Ci64A~11 Note: _ 16. IfCE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT vs, SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE => vs. OUTPUT VOLTAGE 1.4 1.2 = 120 ao a B12 10 2 100 3 lec 3 loc w 1.0 2 iva a a 0.8 5 80 oO Wos wu 4S S06 60 S o6 = z z 3 9 04 Sg 04 % 40 0.2 isp 0.2/ Isp a 20 0.0 0.0 3 0 40. 45 #50 55 60 55 25 125 00 10 20 30 40 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) NORMALIZED ACCESS TIME NORMALIZED ACCESS TIME OUTPUT SINK CURRENT vs. SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE vs. OUTPUT VOLTAGE 14 16 z 140 120 13 14 5 & 3 i 100 O12 a ea N 12 B 80 5 N Zz 14 2 ca x = 3 2 60 & 2 1.0 5 S10 9 Voc = 5.0V 5 40 0.9 08 5 20 : o 0.8 0.6 Q 4.0 45 5.0 5.5 6.0 ~55 25 125 0.0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) 2-172an CY7C164A = CY7C166A Z SEMICONDUCTOR Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE ys. SUPPLY VOLTAGE ys. OUTPUT LOADING. NORMALIZED Icc vs. CYCLE TIME 3.0 30.0 4.25 T Voc = 8.0V 25 25.0 Ta = 25C 2 a 38 Vin = 0.5V GQ 20 20.0 B 1.00 N 2 N = 15 < 150 = = 5 . = 5 a 5 $10 10.0 Veo = 4.5V 5 0.75 i 05 5.0 Ta = 25C Le 0.0 0.50 00 #10 20 30 40 5.0 0 200 400 600 800 1000 10 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) CY7C164A Truth Table CY7C166A Truth Table CE | WE | Inputs/Outputs Mode CE | WE | OF | Inputs/Outputs Mode H | X | HighZ Deselect/Power-Down H | X | X | HighZ Deselect/Power-Down L | H | Data Out Read L | H | L | Data Out Read L | L | DatalIn Write L tL | X | DatalIn Write L | H | H | HighZ Deselect Address Designators Address Address CY7C164A CY7C166A Name Function Pin Number | Pin Number AS X3 1 1 A6 x4 2 2 AT x5 3 3 A8 X6 4 4 AQ X7 5 5 Al0 5 6 6 All Y4 7 7 Al2 YO 8 8 Al3 Y1 9 9 AO Y2 17 19 Al Y3 18 20 A2 X0 19 21 A3 Xl 20 22 A4 X2 21 23 2-173S_ CY7C164A = Bronce CY7C166A ' SEMICONDUCTOR Ordering Information Speed Package Package Operating (ns) Ordering Code Type Type Range 15 CY7C164A15DMB D10 22-Lead (300-Mil) CerDIP Military CY7C164A~15LMB L52 22-Pin Rectangular Leadless Chip Carrier 20 CY7C164A~20DMB D10 22-Lead (300-Mil) CerDIP Military CY7C164A-20LMB L52 22-Pin Rectangular Leadless Chip Carrier 25 CY7C164A25DMB D10 22-Lead (300-Mil) CerDIP Military CY7C164A25LMB L52 22-Pin Rectangular Leadless Chip Carrier 35 CY7C164A35DMB D10 22-Lead (300-Mil) CerDIP Military CY7C164A35LMB LS2 22-Pin Rectangular Leadless Chip Carrier Speed Package Package Operating (ns) Ordering Code Type Type Range 15 CY7C166A~15DMB D4 24-Lead (300-Mil) CerDIP Military CY7C166A1SLMB 154 28-Pin Rectangular Leadless Chip Carrier 20 CY7C166A20DMB D14 24-Lead (300-Mil) CerDIP Military CY7C166A20LMB L54 28-Pin Rectangular Leadless Chip Carrier 25 CY7C166A25DMB Di4 24-Lead (300-Mil) CerDIP Military CY7C166A25LMB L54 28-Pin Rectangular Leadless Chip Carrier 35 CY7C166A-35DMB D4 24-Lead (300-Mil) CerDIP Military CY7C166A35LMB L354 28-Pin Rectangular Leadless Chip Carrier Shaded area contains advanced information. : MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Switching Characteristics Parameter Subgroups Parameter Subgroups Vou 1, 2,3 READ CYCLE VoL 1, 2,3 trc 7, 8,9, 10, 11 Vin 1, 2,3 taa 7, 8, 9, 10, 11 Vir, Max. 1, 2,3 toHA 7, 8, 9, 10, 11 lx 1, 2,3 tACE 7, 8, 9, 10, 11 loz 1,2,3 tool!) 7, 8, 9, 10, 11 los 1,2,3 WRITE CYCLE Ice 1,2,3 twe 7, 8,9, 10, 11 Ispi 1,2,3 tscE 7, 8,9, 10, 11 Ispj 1,2,3 taw 7, 8, 9, 10, 11 tHa 7, 8,9, 10, 11 Document #: 38-00113-C tsa 7, 8, 9, 10, 11 tpwE 7, 8,9, 10, 11 tsp 7, 8, 9, 10, 11 typ 7, 8, 9, 10, 11 Note: 17. 7C166A only. 2-174