NDT452APD84Z - Fairchild Semiconductor Corporation

June 1996

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

________________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter NDT452AP Units

VDSS Drain-Source Voltage -30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current - Continuous (Note 1a) -5 A

- Pulsed - 15

PDMaximum Power Dissipation (Note 1a) 3W

(Note 1b) 1.3

(Note 1c) 1.1

TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

* Order option J23Z for cropped center drain lead.

NDT452AP Rev. B1

-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V

RDS(ON) = 0.1Ω @ VGS = -4.5V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V

IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.6 -2.8 V

TJ = 125°C -0.7 -1.2 -2.2

RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -5.0 A 0.052 0.065 Ω

TJ = 125°C 0.075 0.13

VGS = -4.5 V, ID = -4.3 A 0.085 0.1

ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V -15 A

VGS = -4.5 V, VDS = -5 V -5

gFS Forward Transconductance VDS = -10 V, ID = -5.0 A 7S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -15 V, VGS = 0 V,

f = 1.0 MHz 690 pF

Coss Output Capacitance 430 pF

Crss Reverse Transfer Capacitance 160 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDD = -10 V, ID = -1 A,

VGEN = -10 V, RGEN = 6 Ω9 20 ns

trTurn - On Rise Time 20 30 ns

tD(off) Turn - Off Delay Time 40 50 ns

tfTurn - Off Fall Time 19 40 ns

QgTotal Gate Charge VDS = -10 V,

ID = -5.0 A, VGS = -10 V 22 30 nC

Qgs Gate-Source Charge 3.2 nC

Qgd Gate-Drain Charge 5.2 nC

NDT452AP Rev. B1

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -2.5 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A (Note 2) -0.85 -1.2 V

trr Reverse Recovery Time VGS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs 100 ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

PD(t)=TJ−TA

RθJA(t)=TJ−TA

RθJC+RθCA(t)=ID

2(t)×RDS(ON)TJ

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.

b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT452AP Rev. B1

1a 1b 1c

NDT452AP Rev. B1

-4-3-2-10

-20

-15

-10

-5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

-4.0

-6.0 -5.0

-3.5

-3.0

-4.5

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = -10V

I = -5.0A

R , NORMALIZED

DS(ON)

-50 -25 025 50 75 100 125 150

0.6

0.7

0.8

0.9

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

I = -250µA

V = V

DS GS

V , NORMALIZED

-20-16-12-8-40

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(on)

V = -3.5V

-10

-5.0

-6.0

- 4.0

-4.5

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with

Temperature.

-6-5-4-3-2-1

-20

-15

-10

-5

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = -10V

T = -55°C

25°C

125°C

-20-16-12-8-40

0.5

1.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(on)

V = -10V

T = 125°C

25°C

-55°C

NDT452AP Rev. B1

-50 -25 025 50 75 100 125 150

0.94

0.96

0.98

1.02

1.04

1.06

1.08

1.1

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = -250µA

BV , NORMALIZED

DSS

J00.4 0.8 1.2 1.6 2

0.001

0.01

0.1

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J25°C -55°C

V = 0V

0 5 10 15 20 25

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

I = -5.0A

DV = -5V

DS -10V -20V

0.1 0.2 0.5 1 2 5 10 30

100

200

300

500

1000

2000

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

iss

f = 1 MHz

V = 0V

oss

rss

Figure 7. Breakdown Voltage Variation with

Temperature. Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

Typical Electrical Characteristics

-VDD

VOUT

VGS DUT

VIN

RGEN G

Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.

10%

50%

90%

10%

90%

50%

VIN

VOUT

on off

d(off) f

d(on)

t t

ttt

INVERTED

10%

PULSE WIDTH

NDT452AP Rev. B1

Typical Thermal Characteristics

-20-16-12-8-40

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

25°C

V = -10V

125°C

Figure 13. Transconductance Variation with Drain

Current and Temperature.

00.2 0.4 0.6 0.8 1

0.5

1.5

2.5

3.5

2oz COPPER MOUNTING PAD AREA (in )

STEADY-STATE POWER DISSIPATION (W)

4.5"x5" FR-4 Board

T = 25 C

Still Air

Figure 14. SOT-223 Maximum Steady- tate

Power Dissipation versus Copper

Mounting Pad Area.

Figure 16. Maximum Safe Operating Area.

00.2 0.4 0.6 0.8 1

2oz COPPER MOUNTING PAD AREA (in )

I , STEADY-STATE DRAIN CURRENT (A)

4.5"x5" FR-4 Board

T = 25 C

Still Air

V = -10V

0.1 0.2 0.5 1 2 5 10 30 50

0.01

0.05

0.1

0.5

- V , DRAIN-SOURCE CURRENT (V)

-I , DRAIN CURRENT (A)

10ms

100ms

10s

100us

1ms

RDS(ON) LIMIT

V = -10V

SINGLE PULSE

R = See Note 1c

T = 25°C

θJA

Figure 15. Maximum Steady-State Drain

Current versus Copper Mounting Pad

Area.

Figure 17. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

R (t) = r(t) * R

R = See Note 1 c

θJA

T - T = P * R (t)

θJA

P(pk)

1 t

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

Rev. H4



ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E2CMOSTM

EnSignaTM

FACT™

FACT Quiet Series™

SMART START™

STAR*POWER™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

UltraFET



STAR*POWER is used under license

VCX™