HN2S03T
2004-02-27
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03T
High Speed Switching Application
Two independent diodes are mounted on Thin Extreme Super Mini Quad
package that are suitable for higher mounting densities.
Low forward voltage : VF (3) = 0.50V (typ.)
Low reverse current : IR= 0.5µA (max)
Small total capacitance : CT = 3.9pF (typ.)
Maximum Ratings (Q1, Q2 Common, Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage VRM 25 V
Reverse voltage VR 20 V
Maximum (peak) forward current IFM 100 * mA
Average forward current IO 50 * mA
Surge current (10ms) IFSM 1 * A
Power dissipation P 70 ** mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55∼125 °C
Operating temperature range Topr −40∼100 °C
* : Unit rating. Total rating = Unit rating x 1.5
**: Total rating
Electrical Characteristics (Q1, Q2 Common, Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― I
F = 1mA ― 0.33 ―
VF (2) ― I
F = 5mA ― 0.38 ―
Forward voltage
VF (3) ― I
F = 50mA ― 0.50 0.55
V
Reverse current IR ― V
R = 20V ― ― 0.5
µA
Total capacitance CT ― VR = 0, f = 1MHz ― 3.9 ― pF
0.2±0.05
0.9±0.05
1.2±0.05
0.8±0.05
1
23
1.2±0.05
4
0.12±0.05
0.52±0.05
JEDEC ―
JEITA ―
TOSHIBA ―
Weight: 1.5mg(Typ.)
Unit: mm
1. ANODE1
2. ANODE2
3. CATHODE2
4. CATHODE1
TESQ
HN2S03T
2004-02-27
2
Pin Assignment (Top View) Marking
1 2
3
4
Q1
Q2
A7
1 2
34
AMBIENT TEMPERATURE Ta (°C)
P – Ta
COLLECTOR POWER DISSIPATION PC (mW)
100
0 175125 100 50 150 7525
80
0
40
60
HN2S03T
2004-02-27
3
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EA
A
RESTRICTIONS ON PRODUCT USE
