Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6760
JANTXV2N6760
Features:
■Avalanche Energy Rating
■Dynamic dv/dt Rating
■Simple Drive Requirements
■Ease of Paralleling
■Hermetically Sealed
N-CHANNEL
Provisional Data Sheet No. PD-9.335E
400 V olt, 1.00ΩΩ
ΩΩ
Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability . They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
JANTX2N6760
JANTXV2N6760
[REF:MIL-PRF-19500/542]
[GENERIC:IRF330]
HEXFET
®
POWER MOSFET
Absolute Maximum Ratings
Parameter JANTX2N6760, JANTXV2N6760 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5.5
ID @ VGS = 10V, T C = 100°C Continuous Drain Current 3.5
IDM Pulsed Drain Current ➀22
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.60 W/K ➄
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁1.7 mJ
IAR Avalanche Current ➀5.5 A
EAR Repetitive Avalanche Energy ➀—mJ
dv/dt Peak Diode Recovery dv/dt ➂4.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300
(0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight 11.5 (typical) g
oC
A
5.5A
1.00Ω
400V
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Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case — — 1.67
RthJA Junction-to-Ambient — — 30 K/ W Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ISContinuous Source Current (Body Diode) — — 5. 5 Modified MOSFET symbol showing the
ISM Pulse Source Current (Body Diode) ➀—— 22 integral reverse p-n junction rectifier.
VSD Diode Forward Voltage — — 1. 5 V Tj = 25°C, IS = 5.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 700 ns Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 6. 2 µCV
DD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0 mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
RDS(on) Static Drain-to-Source — — 1.00 VGS = 10V, ID = 3.5A
On-State Resistance — — 1.22 ΩVGS = 10V, ID = 5.5A
VGS(th) Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.9 — — S ( )V
DS > 15V, IDS = 3.5A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 1 00 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge 17 — 39 VGS = 10V, ID = 5.5A
Qgs Gate-to-Source Charge 2.0 — 6.0 VDS = Max. Rating x 0.5
Qgd Gate-to-Drain (“Miller”) Charge 8 .0 — 20 see figures 6 and 13
td(on) Turn-On Delay Time — — 30 VDD = 200V, ID = 5.5A,
trRise Time — — 40 RG = 7.5Ω, VGS = 10V
td(off) Turn-Off Delay Time — — 8 0
tfFall Time — — 35 see figure 10
LDInternal Drain Inductance — 5. 0 —
LSInternal Source Inductance — 13.0 —
Ciss Input Capacitance — 620 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 2 0 0 — f = 1.0 MHz
Crss Reverse Transfer Capacitance — 75 — see figure 5
JANTX2N6760, JANTXV2N6760 Device
Ω
➃
µA
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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Fig. 1 — Typical Output Characteristics
TC = 25°C Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 3 — Typical T ransfer Characteristics Fig. 4 — Normalized On-Resistance Vs.Temperature
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
JANTX2N6760, JANTXV2N6760 Device
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Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit
Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — Unclamped Inductive Waveforms
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
JANTX2N6760, JANTXV2N6760 Device
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Case Outline and Dimensions — TO-204AA (Modified TO-3)
➀Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁@ VDD = 50V , Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = 5.5A, VGS = 10V , 25 ≤ RG ≤ 200Ω
➂ISD ≤ 5.5A, di/dt ≤ 90A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
➃Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄K/W = °C/W
W/K = W/°C
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 10/96
JANTX2N6760, JANTXV2N6760 Device
Fig. 13b — Basic Gate Charge Waveform
All dimensions are shown millimeters (inches)
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