512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF - 8 Meg x 16 x 4 Banks MT46H16M32LF - 4 Meg x 32 x 4 Banks Features * * * * * * * * * * * * * * * * * * * * Options * VDD/VDDQ - 1.8V/1.8V - 1.8V/1.2V1 * Configuration - 32 Meg x 16 (8 Meg x 16 x 4 banks) - 16 Meg x 32 (4 Meg x 32 x 4 banks) * Row-size option - JEDEC-standard option - Reduced page-size option1 * Plastic green package - 60-ball VFBGA (8mm x 9mm) 2 - 90-ball VFBGA (10mm x 13mm) 3 - 90-ball VFBGA (9mm x 13mm) 3 * Timing - cycle time - 5ns @ CL = 3 - 5.4ns @ CL = 3 - 6ns @ CL = 3 - 7.5ns @ CL = 3 * Power - Standard IDD2/IDD6 - Low-power IDD2/IDD61 * Operating temperature range - Commercial (0 to +70C) - Industrial (-40C to +85C) * Design revision VDD/VDDQ = 1.70-1.95V 1.2V I/O option V DDQ = 1.14-1.30V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR)architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge-aligned with data for READs;centeraligned with data for WRITEs 4 internal banks for concurrent operation Data masks (DM) for masking write data--one mask per byte Programmable burst lengths (BL): 2, 4, 8, or 16 Concurrent auto precharge option is supported Auto refresh and self refresh modes 1.8V LVCMOS-compatible inputs On-chip temp sensor to control self refresh rate Partial-array self refresh (PASR) Deep power-down (DPD) Status read register (SRR) Selectable output drive strength (DS) Clock stop capability 64ms refresh Notes: Table 1: Key Timing Parameters (CL = 3) Speed Grade Clock Rate Access Time -5 200 MHz 5.0ns -54 185 MHz 5.0ns -6 166 MHz 5.0ns -75 133 MHz 6.0ns PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1 Marking H HC 32M16 16M32 LF LG BF CM CX -5 -54 -6 -75 None L None IT :B 1. Contact factory for availability. 2. Only available for x16 configuration. 3. Only available for x32 configuration. Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512Mb: x16, x32 Mobile LPDDR SDRAM Features Table 2: Configuration Addressing Architecture 32 Meg x 16 16 Meg x 32 Reduced Page Size 16 Meg x 32 Configuration 8 Meg x 16 x 4 banks 4 Meg x 32 x 4 banks 4 Meg x 32 x 4 banks Refresh count 8K 8K 8K Row addressing A[12:0] A[12:0] A[13:0] Column addressing A[9:0] A[8:0] A[7:0] Figure 1: 512Mb Mobile LPDDR Part Numbering MT 46 H 32M16 LF BF Micron Technology -6 IT :C Design Revision :C = Third generation Product Family Operating Temperature 46 = Mobile LPDDR Blank = Commercial (0C to +70C) Operating Voltage IT = Industrial (-40C to +85C) H = 1.8/1.8V AT = Automotive (-40C to +105C) Configuration Power 32 Meg x 16 Blank = Standard IDD2/IDD6 16 Meg x 32 Cycle Time (CL = 3) Addressing -5 = 5ns tCK LF = JEDEC-standard -54 = 5.4ns tCK LG = Reduced page size -6 = 6ns tCK -75 = 7.5ns tCK Package Codes BF = 60-ball (8mm x 9mm) VFBGA, "green" B5 = 90-ball (8mm x 13mm) VFBGA, "green" FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Micron's FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Features Contents General Description ......................................................................................................................................... 8 Functional Block Diagrams ............................................................................................................................... 9 Ball Assignments and Descriptions ................................................................................................................. 11 Package Dimensions ....................................................................................................................................... 15 Electrical Specifications .................................................................................................................................. 18 Electrical Specifications - IDD Parameters ........................................................................................................ 22 Electrical Specifications - AC Operating Conditions ......................................................................................... 26 Output Drive Characteristics ........................................................................................................................... 31 Functional Description ................................................................................................................................... 35 Commands .................................................................................................................................................... 36 DESELECT ................................................................................................................................................. 37 NO OPERATION ......................................................................................................................................... 37 LOAD MODE REGISTER ............................................................................................................................. 37 ACTIVE ...................................................................................................................................................... 37 READ ......................................................................................................................................................... 38 WRITE ....................................................................................................................................................... 39 PRECHARGE .............................................................................................................................................. 40 BURST TERMINATE ................................................................................................................................... 41 AUTO REFRESH ......................................................................................................................................... 41 SELF REFRESH ........................................................................................................................................... 42 DEEP POWER-DOWN ................................................................................................................................. 42 Truth Tables ................................................................................................................................................... 43 State Diagram ................................................................................................................................................ 48 Initialization .................................................................................................................................................. 49 Standard Mode Register .................................................................................................................................. 52 Burst Length .............................................................................................................................................. 53 Burst Type .................................................................................................................................................. 53 CAS Latency ............................................................................................................................................... 54 Operating Mode ......................................................................................................................................... 55 Extended Mode Register ................................................................................................................................. 56 Temperature-Compensated Self Refresh ...................................................................................................... 56 Partial-Array Self Refresh ............................................................................................................................ 57 Output Drive Strength ................................................................................................................................ 57 Status Read Register ....................................................................................................................................... 58 Bank/Row Activation ...................................................................................................................................... 60 READ Operation ............................................................................................................................................. 61 WRITE Operation ........................................................................................................................................... 72 PRECHARGE Operation .................................................................................................................................. 84 Auto Precharge ............................................................................................................................................... 84 Concurrent Auto Precharge ......................................................................................................................... 85 AUTO REFRESH Operation ............................................................................................................................. 90 SELF REFRESH Operation ............................................................................................................................... 91 Power-Down .................................................................................................................................................. 92 Deep Power-Down ..................................................................................................................................... 94 Clock Change Frequency ................................................................................................................................ 96 Revision History ............................................................................................................................................. 97 Rev. I, Production - 12/09 ........................................................................................................................... 97 Rev. H, Production - 03/09 .......................................................................................................................... 97 Rev. G, Production - 02/09 .......................................................................................................................... 97 Rev. F, Production - 10/08 ........................................................................................................................... 97 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Features Rev. E, Production - 8/08 ............................................................................................................................ Rev. D, Production - 05/08 .......................................................................................................................... Rev. C, Production - 03/08 .......................................................................................................................... Rev. B, Preliminary - 12/07 .......................................................................................................................... Rev. A, Advance - 7/07 ................................................................................................................................ Revision History for Commands, Operations, and Timing Diagrams ............................................................. Update - 05/08 ........................................................................................................................................... Update - 05/08 ........................................................................................................................................... Update - 03/08 ........................................................................................................................................... Update - 12/07 ........................................................................................................................................... Update - 07/07 ........................................................................................................................................... PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 4 97 97 98 98 98 98 98 98 99 99 99 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Features List of Tables Table 1: Key Timing Parameters (CL = 3) ........................................................................................................... 1 Table 2: Configuration Addressing ................................................................................................................... 2 Table 3: VFBGA Ball Descriptions ................................................................................................................... 13 Table 4: Absolute Maximum Ratings .............................................................................................................. 18 Table 5: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 18 Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions .................................................. 19 Table 7: Capacitance (x16, x32) ...................................................................................................................... 20 Table 8: IDD Specifications and Conditions (x16) ............................................................................................. 22 Table 9: IDD Specifications and Conditions (x32) ............................................................................................. 23 Table 10: IDD6 Specifications and Conditions .................................................................................................. 24 Table 11: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 26 Table 12: Target Output Drive Characteristics (Full Strength) ........................................................................... 31 Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 32 Table 14: 1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength) ............................................. 33 Table 15: Target Output Drive Characteristics (One-Half Strength) .................................................................. 34 Table 16: Truth Table - Commands ................................................................................................................ 36 Table 17: DM Operation Truth Table .............................................................................................................. 37 Table 18: Truth Table - Current State Bank n - Command to Bank n ................................................................ 43 Table 19: Truth Table - Current State Bank n - Command to Bank m ............................................................... 45 Table 20: Truth Table - CKE ........................................................................................................................... 47 Table 21: Burst Definition Table ..................................................................................................................... 53 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Features List of Figures Figure 1: 512Mb Mobile LPDDR Part Numbering .............................................................................................. 2 Figure 2: Functional Block Diagram (x16) ......................................................................................................... 9 Figure 3: Functional Block Diagram (x32) ....................................................................................................... 10 Figure 4: 60-Ball VFBGA - 8mm x 9mm (Top View) ......................................................................................... 11 Figure 5: 90-Ball VFBGA - 10mm x 13mm and 9mm x 13mm (Top View) .......................................................... 12 Figure 6: 60-Ball VFBGA (8mm x 9mm) .......................................................................................................... 15 Figure 7: 90-Ball VFBGA (10mm x 13mm) ....................................................................................................... 16 Figure 8: 90-Ball VFBGA (9mm x 13mm) ......................................................................................................... 17 Figure 9: Typical Self Refresh Current vs. Temperature .................................................................................... 25 Figure 10: ACTIVE Command ........................................................................................................................ 38 Figure 11: READ Command ........................................................................................................................... 39 Figure 12: WRITE Command ......................................................................................................................... 40 Figure 13: PRECHARGE Command ................................................................................................................ 41 Figure 14: DEEP POWER-DOWN Command ................................................................................................... 42 Figure 15: Simplified State Diagram ............................................................................................................... 48 Figure 16: Initialize and Load Mode Registers ................................................................................................. 50 Figure 17: Alternate Initialization with CKE LOW ............................................................................................ 51 Figure 18: Standard Mode Register Definition ................................................................................................. 52 Figure 19: CAS Latency .................................................................................................................................. 55 Figure 20: Extended Mode Register ................................................................................................................ 56 Figure 21: Status Read Register Timing ........................................................................................................... 58 Figure 22: Status Register Definition .............................................................................................................. 59 Figure 23: READ Burst ................................................................................................................................... 62 Figure 24: Consecutive READ Bursts .............................................................................................................. 63 Figure 25: Nonconsecutive READ Bursts ........................................................................................................ 64 Figure 26: Random Read Accesses .................................................................................................................. 65 Figure 27: Terminating a READ Burst ............................................................................................................. 66 Figure 28: READ-to-WRITE ............................................................................................................................ 67 Figure 29: READ-to-PRECHARGE .................................................................................................................. 68 Figure 30: Data Output Timing - tDQSQ, tQH, and Data Valid Window (x16) .................................................... 69 Figure 31: Data Output Timing - tDQSQ, tQH, and Data Valid Window (x32) .................................................... 70 Figure 32: Data Output Timing - tAC and tDQSCK .......................................................................................... 71 Figure 33: Data Input Timing ......................................................................................................................... 73 Figure 34: Write - DM Operation .................................................................................................................... 74 Figure 35: WRITE Burst ................................................................................................................................. 75 Figure 36: Consecutive WRITE-to-WRITE ....................................................................................................... 76 Figure 37: Nonconsecutive WRITE-to-WRITE ................................................................................................. 76 Figure 38: Random WRITE Cycles .................................................................................................................. 77 Figure 39: WRITE-to-READ - Uninterrupting ................................................................................................. 78 Figure 40: WRITE-to-READ - Interrupting ...................................................................................................... 79 Figure 41: WRITE-to-READ - Odd Number of Data, Interrupting ..................................................................... 80 Figure 42: WRITE-to-PRECHARGE - Uninterrupting ....................................................................................... 81 Figure 43: WRITE-to-PRECHARGE - Interrupting ........................................................................................... 82 Figure 44: WRITE-to-PRECHARGE - Odd Number of Data, Interrupting .......................................................... 83 Figure 45: Bank Read - With Auto Precharge ................................................................................................... 86 Figure 46: Bank Read - Without Auto Precharge .............................................................................................. 87 Figure 47: Bank Write - With Auto Precharge .................................................................................................. 88 Figure 48: Bank Write - Without Auto Precharge ............................................................................................. 89 Figure 49: Auto Refresh Mode ........................................................................................................................ 90 Figure 50: Self Refresh Mode .......................................................................................................................... 92 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Features Figure 51: Figure 52: Figure 53: Figure 54: Power-Down Entry (in Active or Precharge Mode) ........................................................................... Power-Down Mode (Active or Precharge) ........................................................................................ Deep Power-Down Mode ............................................................................................................... Clock Stop Mode ........................................................................................................................... PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 7 93 94 95 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM General Description General Description The 512Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. Each of the x16's 134,217,728-bit banks is organized as 8,192 rows by 1,024 columns by 16 bits. Each of the x32's 134,217,728-bit banks is organized as 8,192 rows by 512 columns by 32 bits. In the reduced page-size (LG) option, each of the x32's 134,217,728-bit banks are organized as 16,384 rows by 256 columns by 32 bits. Note: 1. Throughout this data sheet, various figures and text refer to DQs as "DQ." DQ should be interpreted as any and all DQ collectively, unless specifically stated otherwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the upper byte (DQ[15:8]), DM refers to UDM and DQS refers to UDQS. The x32 is divided into 4 bytes. For DQ[7:0], DM refers to DM0 and DQS refers to DQS0. For DQ[15:8], DM refers to DM1 and DQS refers to DQS1. For DQ[23:16], DM refers to DM2 and DQS refers to DQS2. For DQ[31:24], DM refers to DM3 and DQS refers to DQS3. 2. Complete functionality is described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. 3. Any specific requirement takes precedence over a general statement. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Functional Block Diagrams Functional Block Diagrams Figure 2: Functional Block Diagram (x16) CKE CK# CK WE# CAS# RAS# Command decode CS# Control logic Bank 1 Refresh counter Bank 2 Bank 3 Standard mode register Extended mode register Bank 0 rowaddress latch and decoder Rowaddress Mux Bank 0 memory array Data 16 32 Read latch Sense amplifiers 16 16 MUX DRVRS 2 DQS generator DQ[15:0] COL 0 I/O gating DM mask logic 2 Address BA0, BA1 Address register 2 Bank control logic CK 32 Mask 32 Column decoder Columnaddress counter/ latch Write FIFO and drivers CK out CK in 4 32 2 DQS Input registers LDQS, UDQS 2 2 2 2 16 16 16 16 RCVRS 16 LDM, UDM Data CK 2 COL 0 1 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Functional Block Diagrams Figure 3: Functional Block Diagram (x32) CKE CK# WE# CAS# RAS# Command decode CK CS# Control logic Bank 1 Refresh counter Bank 2 Bank 3 Standard mode register Extended mode register Bank 0 rowaddress latch and decoder Rowaddress MUX Bank 0 memory array Data 32 64 Read latch Sense amplifiers 32 32 MUX DRVRS 2 DQS generator DQ[31:0] COL 0 I/O gating DM mask logic 2 Address, BA0, BA1 Address register 2 Bank control logic CK 64 Mask 64 Column decoder Columnaddress counter/ latch Write FIFO and drivers CK out CK in 8 64 DQS Input registers 4 4 4 4 32 32 DQS0 DQS1 DQS2 DQS3 4 RCVRS 32 32 32 Data CK DM0 DM1 DM2 DM3 4 COL 0 1 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 4: 60-Ball VFBGA - 8mm x 9mm (Top View) 1 2 3 VSS DQ15 VDDQ 4 5 6 7 8 9 VSSQ VDDQ DQ0 VDD DQ13 DQ14 DQ1 DQ2 VSSQ VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ VDDQ DQ9 DQ10 DQ5 DQ6 TEST1 VSSQ UDQS DQ8 DQ7 LDQS VDDQ VSS UDM NC NC LDM VDD CKE CK CK# WE# CAS# RAS# A9 A11 A12 CS# BA0 BA1 A6 A7 A8 A10/AP A0 A1 VSS A4 A5 A2 A3 VDD A B C D E F G H J K Note: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. D9 is a test pin that must be tied to VSS or VSSQ in normal operations. 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Ball Assignments and Descriptions Figure 5: 90-Ball VFBGA - 10mm x 13mm and 9mm x 13mm (Top View) 1 2 3 VSS DQ31 VDDQ 4 5 6 7 8 9 VSSQ VDDQ DQ16 VDD DQ29 DQ30 DQ17 DQ18 VSSQ VSSQ DQ27 DQ28 DQ19 DQ20 VDDQ VDDQ DQ25 DQ26 DQ21 DQ22 TEST1 VSSQ DQS3 DQ24 DQ23 DQS2 VDDQ VDD DM3 NC CKE CK CK# WE# CAS# RAS# A9 A11 A12 CS# BA0 BA1 A6 A7 A8 A10/AP A0 A1 A4 DM1 A5 A2 DM0 A3 VSSQ DQS1 DQ8 DQ7 DQS0 VDDQ VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ VDDQ DQ13 DQ14 DQ1 DQ2 VSSQ VSS DQ15 VSSQ VDDQ DQ0 VDD A B C D E F DNU/A13 DM2 VSS G H J K L M N P R Note: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. D9 is a test pin that must be tied to VSS or VSSQ in normal operations. 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Ball Assignments and Descriptions Table 3: VFBGA Ball Descriptions Symbol Type Description CK, CK# Input Clock: CK is the system clock input. CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Input and output data is referenced to the crossing of CK and CK# (both directions of the crossing). CKE Input Clock enable: CKE HIGH activates, and CKE LOW deactivates, the internal clock signals, input buffers, and output drivers. Taking CKE LOW enables PRECHARGE power-down and SELF REFRESH operations (all banks idle), or ACTIVE power-down (row active in any bank). CKE is synchronous for all functions except SELF REFRESH exit. All input buffers (except CKE) are disabled during power-down and self refresh modes. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external bank selection on systems with multiple banks. CS# is considered part of the command code. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. UDM, LDM (60-ball) Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM balls are input-only, the DM loading is designed to match that of DQ and DQS balls. BA0, BA1 Input Bank address inputs: BA0 and BA1 define to which bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA0 and BA1 also determine which mode register is loaded during a LOAD MODE REGISTER command. A[12:0] (60-ball) Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ or WRITE commands, to select one location out of the memory array in the respective bank. During a PRECHARGE command, A10 determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA0, BA1) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE REGISTER command. DM[3:0] (90-ball) A[12:0] (90-ball) DQ[15:0] (60-ball) Input/ output Data input/output: Data bus for x16 and x32. Input/ output Data strobe: Output with read data, input with write data. DQS is edge-aligned with read data, center-aligned in write data. It is used to capture data. DQ[31:0] (90-ball) LDQS, UDQS (60-ball) DQS[3:0] (90-ball) PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Ball Assignments and Descriptions Table 3: VFBGA Ball Descriptions (Continued) PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Symbol Type VDDQ Supply DQ power supply. Description VSSQ Supply DQ ground. VDD Supply Power supply. VSS Supply Ground. NC - DNU/A13 Input Do not use. A13 if reduced page-size option is selected; otherwise, DNU. TEST Input Test pin: Must be tied to VSS or VSSQ in normal operations. No connect: May be left unconnected. 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Package Dimensions Figure 6: 60-Ball VFBGA (8mm x 9mm) 0.65 0.05 0.3 0.025 Seating plane A 0.1 A 60x O0.45 Dimensions apply to solder balls post-reflow. The pre-reflow balls are O0.42 on O0.4 SMD ball pads. Solder ball material: SAC105 (98.5% Sn, 1% Ag, 0.5% Cu) Substrate material: plastic laminate Mold compound: epoxy novolac 8 0.1 9 8 7 3 2 Micron logo to be lased ball A1 ID Ball A1 ID 4 0.05 1 A B C 3.6 4.5 0.05 D E 7.2 9 0.1 F G H J 0.8 TYP K 0.8 TYP 6.4 Note: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 3.2 1.0 MAX 1. All dimensions are in millimeters. 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 7: 90-Ball VFBGA (10mm x 13mm) 0.65 0.05 Seating plane A 0.1 A 90X O0.45 Dimensions apply to solder balls post-reflow. The pre-reflow balls are O0.42 on O0.4 SMD ball pads. Solder ball material: SAC105 (98.5% Sn, 1% Ag, 0.5% Cu) Substrate material: plastic laminate 10 0.1 Mold compound: epoxy novolac Ball A1 ID 5 0.05 9 8 7 3 2 Ball A1 ID 1 A B C D 5.6 6.5 0.05 E F G 11.2 13 0.1 H J K L M N P 0.8 TYP R 0.8 TYP 3.2 6.4 Note: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1.0 MAX 1. All dimensions are in millimeters. 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 8: 90-Ball VFBGA (9mm x 13mm) Seating plane 0.12 A 0.65 0.1 A 90X O0.45 Solder ball material: SAC105. Dimensions apply to solder balls postreflow on O0.4 SMD ball pads. 9 8 7 Ball A1 ID 3 2 1 Ball A1 ID A B C D E F G 11.2 CTR H 13 0.1 J K L M N P 0.8 TYP R 0.8 TYP 1.0 MAX 6.4 CTR 0.25 MIN 9 0.1 Note: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. All dimensions are in millimeters. 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Table 4: Absolute Maximum Ratings Note 1 applies to all parameters in this table Parameter Symbol Min Max Unit VDD/VDDQ supply voltage relative to VSS VDD/VDDQ -1.0 2.4 V Voltage on any pin relative to VSS VIN -0.5 2.4 or (VDDQ + 0.3V), whichever is less V Storage temperature (plastic) TSTG -55 +150 C Note: 1. VDD and VDDQ must be within 300mV of each other at all times. VDDQ must not exceed VDD. Table 5: AC/DC Electrical Characteristics and Operating Conditions Notes 1-5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70-1.95V Parameter/Condition Symbol Min Max Unit Notes Supply voltage VDD 1.70 1.95 V 6, 7 I/O supply voltage VDDQ 1.70 1.95 V 6, 7 Input voltage high VIH 0.8 x VDDQ VDDQ + 0.3 V 8, 9 Input voltage low VIL -0.3 0.2 x VDDQ V 8, 9 VIN -0.3 VDDQ + 0.3 V 10 DC input differential voltage VID(DC) 0.4 x VDDQ VDDQ + 0.6 V 10, 11 AC input differential voltage VID(AC) 0.6 x VDDQ VDDQ + 0.6 V 10, 11 VIX 0.4 x VDDQ 0.6 x VDDQ V 10, 12 DC input high voltage VIH(DC) 0.7 x VDDQ VDDQ + 0.3 V 8, 9, 13 DC input low voltage VIL(DC) -0.3 0.3 x VDDQ V 8, 9, 13 AC input high voltage VIH(AC) 0.8 x VDDQ VDDQ + 0.3 V 8, 9, 13 AC input low voltage VIL(AC) -0.3 0.2 x VDDQ V 8, 9, 13 DC output high voltage: Logic 1 (IOH = -0.1mA) VOH 0.9 x VDDQ - V DC output low voltage: Logic 0 (IOL = 0.1mA) VOL - 0.1 x VDDQ V II -1 1 A Address and command inputs Clock inputs (CK, CK#) DC input voltage AC differential crossing voltage Data inputs Data outputs Leakage current Input leakage current Any input 0V VIN VDD (All other pins not under test = 0V) PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications Table 5: AC/DC Electrical Characteristics and Operating Conditions (Continued) Notes 1-5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70-1.95V Parameter/Condition Symbol Min Output leakage current (DQ are disabled; 0V VOUT VDDQ) IOZ Max Unit -5 5 A Notes Operating temperature Commercial TA 0 +70 C Industrial TA -40 +85 C Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions Notes 1-5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70-1.95V Parameter/Condition Symbol Min Max Unit Notes Supply voltage VDD 1.70 1.95 V 6, 7 I/O supply voltage VDDQ 1.14 1.30 V 6, 7 Input voltage high VIH 0.9 x VDDQ VDDQ + 0.2 V 8, 9 Input voltage low VIL -0.2 0.1 x VDDQ V 8, 9 Address and command inputs Clock inputs (CK, CK#) DC input voltage VIN -0.2 VDDQ + 0.2 V 10 DC input differential voltage VID(DC) 0.4 x VDDQ VDDQ + 0.4 V 10, 11 AC input differential voltage VID(AC) 0.6 x VDDQ VDDQ + 0.4 V 10, 11 VIX 0.4 x VDDQ 0.6 x VDDQ V 10, 12 DC input high voltage VIH(DC) 0.8 x VDDQ VDDQ + 0.2 V 8, 9, 13 DC input low voltage VIL(DC) -0.2 0.2 x VDDQ V 8, 9, 13 AC input high voltage VIH(AC) 0.9 x VDDQ VDDQ + 0.2 V 8, 9, 13 AC input low voltage VIL(AC) -0.2 0.1 x VDDQ V 8, 9, 13 DC output high voltage: Logic 1 (IOH = -0.1mA) VOH 0.9 x VDDQ - V DC output low voltage: Logic 0 (IOL = 0.1mA) VOL - 0.1 x VDDQ V Input leakage current Any input 0V VIN VDD (All other pins not under test = 0V) II -1 1 A Output leakage current (DQ are disabled; 0V VOUT VDDQ) IOZ -5 5 A AC differential crossing voltage Data inputs Data outputs Leakage current Operating temperature Commercial TA 0 +70 C Industrial TA -40 +85 C Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. All voltages referenced to VSS. 2. All parameters assume proper device initialization. 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications 3. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 4. Outputs measured with equivalent load; transmission line delay is assumed to be very 50 I/O 20pF Full drive strength 5. 6. 7. 8. 50 I/O 10pF Half drive strength small: Timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VDDQ/2 (or to the crossing point for CK/CK#). The output timing reference voltage level is VDDQ/2. Any positive glitch must be less than one-third of the clock cycle and not more than +200mV or 2.0V, whichever is less. Any negative glitch must be less than one-third of the clock cycle and not exceed either -150mV or +1.6V, whichever is more positive. VDD and VDDQ must track each other and VDDQ must be less than or equal to VDD. To maintain a valid level, the transitioning edge of the input must: 8a. Sustain a constant slew rate from the current AC level through to the target AC level, VIL(AC) Or VIH(AC). 8b. Reach at least the target AC level. 9. 10. 11. 12. 13. 8c. After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC). VIH overshoot: VIH(MAX) = VDDQ + 1.0V for a pulse width 3ns and the pulse width cannot be greater than one-third of the cycle rate. VIL undershoot: VIL(MIN) = -1.0V for a pulse width 3ns and the pulse width cannot be greater than one-third of the cycle rate. CK and CK# input slew rate must be 1 V/ns (2 V/ns if measured differentially). VID is the magnitude of the difference between the input level on CK and the input level on CK#. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same. DQ and DM input slew rates must not deviate from DQS by more than 10%. 50ps must be added to tDS and tDH for each 100 mV/ns reduction in slew rate. If slew rate exceeds 4 V/ns, functionality is uncertain. Table 7: Capacitance (x16, x32) Note 1 applies to all the parameters in this table Parameter Symbol Min Max Unit Input capacitance: CK, CK# CCK 2.0 4.0 pF Delta input capacitance: CK, CK# CDCK - 0.5 pF Input capacitance: command and address CI 2.0 4.0 pF Delta input capacitance: command and address CDI - 1.0 pF Input/output capacitance: DQ, DQS, DM CIO 2.0 4.5 pF Delta input/output capacitance: DQ, DQS, DM CDIO - 1.0 pF Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Notes 2 2 3 1. This parameter is sampled. VDD/VDDQ = 1.70-1.95V, f = 100 MHz, TA = 25C, VOUT(DC) = VDDQ/2, VOUT (peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. 2. The input capacitance per pin group will not differ by more than this maximum amount for any given device. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications 3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any given device. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - IDD Parameters Electrical Specifications - IDD Parameters Table 8: IDD Specifications and Conditions (x16) Notes 1-5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70-1.95V Max Parameter/Condition Symbol -5 -54 -6 -75 Unit Notes Operating 1 bank active precharge current: tRC = tRC (MIN); tCK = tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Address inputs are switching every 2 clock cycles; Data bus inputs are stable IDD0 70 65 60 50 mA 6 Precharge power-down standby current: All banks idle, CKE is LOW; CS is HIGH, tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2P 300 300 300 300 A 7, 8 Precharge power-down standby current: Clock stopped; All banks idle; CKE is LOW; CS is HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2PS 300 300 300 300 A 7 Precharge nonpower-down standby current: All banks idle CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2N 15 15 15 12 mA 9 Precharge nonpower-down standby current: Clock stopped; All banks idle, CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2NS 8 8 8 8 mA 9 Active power-down standby current: 1 bank active, CKE = LOW; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3P 3 3 3 3 mA 8 Active power-down standby current: Clock stopped; 1 bank active, CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3PS 2 2 2 2 mA Active nonpower-down standby: 1 bank active, CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3N 15 15 15 15 mA 6 Active nonpower-down standby: Clock stopped; 1 bank active, CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3NS 8 8 8 8 mA 6 Operating burst read: 1 bank active; BL = 4; tCK = tCK (MIN); Continuous READ bursts; IOUT = 0mA; Address inputs are switching every 2 clock cycles; 50% data changing each burst IDD4R 115 110 105 90 mA 6 Operating burst write: 1 bank active; BL = 4; tCK = tCK (MIN); Continuous WRITE bursts; Address inputs are switching; 50% data changing each burst IDD4W 115 110 105 90 mA 6 IDD5 105 105 100 100 mA 10 IDD5A 3 3 3 3 mA 10, 11 A 7, 13 tRFC = 110ns Auto refresh: Burst refresh; CKE = HIGH; Address and control inputs are switching; Data bus tRFC = tREFI inputs are stable Deep power-down current: Address and control balls are stable; Data bus inputs are stable PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 22 IDD8 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - IDD Parameters Table 9: IDD Specifications and Conditions (x32) Notes 1-5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70-1.95V Max Parameter/Condition Symbol -5 -54 -6 -75 Unit Notes Operating 1 bank active precharge current: (MIN); = (MIN); CKE is HIGH; CS is HIGH between valid commands; Address inputs are switching every 2 clock cycles; Data bus inputs are stable IDD0 70 65 60 50 mA 6 Precharge power-down standby current: All banks idle; CKE is LOW; CS is HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2P 300 300 300 300 A 7, 8 Precharge power-down standby current: Clock stopped; All banks idle; CKE is LOW; CS is HIGH, CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2PS 300 300 300 300 A 7 Precharge nonpower-down standby current: All banks idle CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2N 15 15 15 12 mA 9 Precharge nonpower-down standby current: Clock stopped; All banks idle, CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2NS 8 8 8 8 mA 9 Active power-down standby current: 1 bank active, CKE = LOW; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3P 3 3 3 3 mA 8 Active power-down standby current: Clock stopped; 1 bank active, CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3PS 2 2 2 2 mA Active nonpower-down standby: 1 bank active; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3N 15 15 15 15 mA 6 Active nonpower-down standby: Clock stopped; 1 bank active, CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3NS 8 8 8 8 mA 6 Operating burst read: 1 bank active; BL = 4; CL = 3; tCK = tCK (MIN); Continuous READ bursts; IOUT = 0mA; Address inputs are switching every 2 clock cycles; 50% data changing each burst IDD4R 125 120 115 100 mA 6 Operating burst write: One bank active; BL = 4; tCK = tCK (MIN); Continuous WRITE bursts; Address inputs are switching; 50% data changing each burst IDD4W 125 120 115 100 mA 6 IDD5 105 105 100 100 mA 10 IDD5A 3 3 3 3 mA 10, 11 A 7, 13 tRC = tRC tCK tCK tRFC = 110ns Auto refresh: Burst refresh; CKE = HIGH; Address and control inputs are switching; Data bus tRFC = tREFI inputs are stable Deep power-down current: Address and control pins are stable; Data bus inputs are stable PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 23 IDD8 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - IDD Parameters Table 10: IDD6 Specifications and Conditions Notes 1-5, 7, and 12 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70-1.95V Parameter/Condition Symbol Low Power Self refresh CKE = LOW; tCK = tCK (MIN); Address and control inputs are stable; Data bus inputs are stable Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Standard Units 500 700 A Full array, 45C 250 390 A 1/2 array, 85C 400 520 A 1/2 array, 45C 220 310 A 1/4 array, 85C 350 430 A 1/4 array, 45C 205 275 A 1/8 array, 85C 350 430 A 1/8 array, 45C 205 275 A 1/16 array, 85C 325 375 A 1/16 array, 45C 200 250 A Full array, 85C IDD6 1. All voltages referenced to VSS. 2. Tests for IDD characteristics may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VDDQ/2 (or to the crossing point for CK/CK#). The output timing reference voltage level is VDDQ/2. 4. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time with the outputs open. 5. IDD specifications are tested after the device is properly initialized and values are averaged at the defined cycle rate. 6. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value for the respective parameter. tRAS (MAX) for IDD measurements is the largest multiple of tCK that meets the maximum absolute value for tRAS. 7. Measurement is taken 500ms after entering into this operating mode to allow settling time for the tester. 8. VDD must not vary more than 4% if CKE is not active while any bank is active. 9. IDD2N specifies DQ, DQS, and DM to be driven to a valid high or low logic level. 10. CKE must be active (HIGH) during the entire time a REFRESH command is executed. From the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge until tRFC later. 11. This limit is a nominal value and does not result in a fail. CKE is HIGH during REFRESH command period (tRFC [MIN]) else CKE is LOW (for example, during standby). 12. Values for IDD6 85C are guaranteed for the entire temperature range. All other IDD6 values are estimated. 13. Typical values at 25C, not a maximum value. 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - IDD Parameters Current (A) Figure 9: Typical Self Refresh Current vs. Temperature 700 650 600 550 500 450 400 350 300 250 200 150 100 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 Temperature (C) Full array 1/2 array 1/4 array 1/8 array 1/16 array PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - AC Operating Conditions Electrical Specifications - AC Operating Conditions Table 11: Electrical Characteristics and Recommended AC Operating Conditions Notes 1-9 apply to all parameters in this table; VDD/VDDQ = 1.70-1.95V -5 -54 Parameter Access window of DQ from CK/CK# CL = 2 Clock cycle time CL = 3 -6 -75 Symbol Min Max Min Max Min Max Min Max Unit tAC 2.0 5.0 2.0 5.0 2.0 5.0 2.0 6.0 ns 2.0 6.5 2.0 6.5 2.0 6.5 2.0 6.5 5 - 5.4 - 6 - 7.5 - CL = 3 tCK CL = 2 CK high-level width ns 12 - 12 - 12 - 12 - tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK CKE minimum pulse width (high and low) tCKE 1 - 1 - 1 - 1 - tCK Auto precharge write recovery + precharge time tDAL - - - - - - - - DQ and DM input hold time relative to DQS fast slew rate tDH 0.48 - 0.54 - 0.6 - 0.8 - DQ and DM input hold time relative to DQS slow slew rate tDH s 0.58 - 0.64 - 0.7 - 0.9 - DQ and DM input setup time relative to DQ fast slew rate tDS f 0.48 - 0.54 - 0.6 - 0.8 - DQ and DM input setup time relative to DQS slow slew rate tDS s 0.58 - 0.64 - 0.7 - 0.9 - tDIPW 1.4 - 1.4 - 1.4 - 1.4 tDQSCK 2.0 5.0 2.0 5.0 2.0 5.0 2.0 6.5 2.0 6.5 2.0 CK low-level width DQ and DM input pulse width (for each input) Access window of DQS from CK/CK# CL = 3 f CL = 2 13, 14, 15 ns 13, 14, 15 - ns 16 2.0 6.0 ns 6.5 2.0 6.5 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQS input low pulse width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQS-DQ skew, DQS to last DQ valid, per group, per access tDQSQ - 0.4 - 0.45 - 0.5 - 0.6 ns WRITE command to first DQS latching transition tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK tDSH 0.2 - 0.2 - 0.2 - 0.2 - tCK 26 11 ns tDQSH PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 10 12 DQS input high pulse width DQS falling edge from CK rising - hold time Notes 13, 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - AC Operating Conditions Table 11: Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes 1-9 apply to all parameters in this table; VDD/VDDQ = 1.70-1.95V -5 -54 Parameter Symbol Min DQS falling edge to CK rising - setup time tDSS 0.2 Data valid output window DVW tQH Half-clock period tHP tCH, Max - - tDQSQ - tCL Data-out High-Z window from CK/CK# CL = 3 tHZ CL = 2 Min -6 Max 0.2 Min - tQH 0.2 - tDQSQ tCH, tCH, - Max - tQH tCL -75 - tDQSQ - tCL Min 0.2 tQH tCH, Max Unit - tCK - tDQSQ Notes ns 17 - ns 18 ns 19, 20 tCL - 5.0 - 5.0 - 5.0 - 6.0 - 6.5 - 6.5 - 6.5 - 6.5 Data-out Low-Z window from CK/CK# tLZ 1.0 - 1.0 - 1.0 - 1.0 - ns 19 Address and control input hold time fast slew rate tIH 0.9 - 1.0 - 1.1 - 1.3 - ns 15, 21 Address and control input hold time slow slew rate tIH S 1.1 - 1.2 - 1.3 - 1.5 - Address and control input setup time fast slew rate tIS F 0.9 - 1.0 - 1.1 - 1.3 - ns 15, 21 Address and control input setup time slow slew rate tIS 1.1 - 1.2 - 1.3 - 1.5 - Address and control input pulse width tIPW 2.3 - 2.4 - 2.4 - 2.6 - ns 16 LOAD MODE REGISTER command cycle time tMRD 2 - 2 - 2 - 2 - tCK DQ-DQS hold, DQS to first DQ to go nonvalid, per access tQH - ns F S tHP - - tQHS tHP - tHP - tQHS - - tQHS tHP - 13, 17 tQHS Data hold skew factor tQHS - 0.5 - 0.5 - 0.65 - 0.75 ns ACTIVE-to-PRECHARGE command tRAS 40 70,000 42 70,000 42 70,000 45 70,000 ns 22 ACTIVE to ACTIVE/ ACTIVE to AUTO REFRESH command period tRC 55 - 59.4 - 60 - 67.5 - ns 23 Active-to-read or write delay tRCD 15 - 16.2 - 18 - 22.5 - ns Refresh period tREF - 64 - 64 - 64 - 64 ms Average periodic refresh interval tREFI - 7.8 - 7.8 - 7.8 - 7.8 s PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 27 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - AC Operating Conditions Table 11: Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes 1-9 apply to all parameters in this table; VDD/VDDQ = 1.70-1.95V -5 -54 Parameter -6 -75 Symbol Min Max Min Max Min Max Min Max Unit tRFC 72 - 72 - 72 - 72 - ns tRP 15 - 16.2 - 18 - 22.5 - ns AUTO REFRESH command period PRECHARGE command period Notes DQS read preamble CL = 3 tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK DQS read preamble CL = 2 tRPRE 0.5 1.1 0.5 1.1 0.5 1.1 0.5 1.1 tCK DQS read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK Active bank a to active bank b command tRRD 10 - 10.8 - 12 - 15 - ns Read of SRR to next valid command tSRC CL + 1 - CL + 1 - CL + 1 - CL + 1 - tCK SRR to read tSRR 2 - 2 - 2 - 2 - tCK DQS write preamble tWPRE 0.25 - 0.25 - 0.25 - 0.25 - tCK DQS write preamble setup time tWPRES 0 - 0 - 0 - 0 - ns 25, 26 DQS write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK 27 tWR 15 - 15 - 15 - 15 - ns 28 Write recovery time Internal WRITE-to-READ command delay tWTR 2 - 2 - 2 - 1 - tCK Exit power-down mode to first valid command tXP 2 - 2 - 1 - 1 - tCK Exit self refresh to first valid command tXSR 120 - 120 - 120 - 120 - ns Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 29 1. All voltages referenced to VSS. 2. All parameters assume proper device initialization. 3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage ranges specified. 4. The circuit shown below represents the timing reference load used in defining the relevant timing parameters of the device. It is not intended to be either a precise representation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to system environment. Specifications are correlated to production test conditions (generally a coaxial transmission line terminated at the tester electronics). For the half-strength driver with a nominal 10pF load, parameters tAC and tQH are expected to be in the same range. However, these parameters are not subject to production test but are estimated by design/characterization. Use of IBIS or other simulation tools for system design validation is suggested. 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - AC Operating Conditions I/O 50 20pF Full drive strength I/O 50 10pF Half drive strength 5. The CK/CK# input reference voltage level (for timing referenced to CK/CK#) is the point at which CK and CK# cross; the input reference voltage level for signals other than CK/CK# is VDDQ/2. 6. A CK and CK# input slew rate 1 V/ns (2 V/ns if measured differentially) is assumed for all parameters. 7. All AC timings assume an input slew rate of 1 V/ns. 8. CAS latency definition: with CL = 2, the first data element is valid at (tCK + tAC) after the clock at which the READ command was registered; for CL = 3, the first data element is valid at (2 x tCK + tAC) after the first clock at which the READ command was registered. 9. Timing tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VDDQ/2 or to the crossing point for CK/CK#. The output timing reference voltage level is VDDQ/2. 10. Clock frequency is only permitted to change during clock stop, power-down, or self refresh mode. 11. In cases where the device is in self refresh mode for tCKE, tCKE starts at the rising edge of the clock and ends when CKE transitions HIGH. 12. tDAL = (tWR/tCK) + (tRP/tCK): for each term, if not already an integer, round up to the next highest integer. 13. Referenced to each output group: for x16, LDQS with DQ[7:0]; and UDQS with DQ[15:8]. For x32, DQS0 with DQ[7:0]; DQS1 with DQ[15:8]; DQS2 with DQ[23:16]; and DQS3 with DQ[31:24]. 14. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less than 1.0 V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100 mV/ns reduction in slew rate. If the slew rate exceeds 4 V/ns, functionality is uncertain. 15. The transition time for input signals (CAS#, CKE, CS#, DM, DQ, DQS, RAS#, WE#, and addresses) are measured between VIL(DC) to VIH(AC) for rising input signals and VIH(DC) to VIL(AC) for falling input signals. 16. These parameters guarantee device timing but are not tested on each device. 17. The valid data window is derived by achieving other specifications: tHP (tCK/2), tDQSQ, and tQH (tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycle variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. 18. tHP (MIN) is the lesser of tCL (MIN) and tCH (MIN) actually applied to the device CK and CK# inputs, collectively. 19. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (tHZ) or begins driving (tLZ). 20. tHZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition. 21. Fast command/address input slew rate 1 V/ns. Slow command/address input slew rate 0.5 V/ns. If the slew rate is less than 0.5 V/ns, timing must be derated: tIS has an additional 50ps per each 100 mV/ns reduction in slew rate from the 0.5 V/ns. tIH has 0ps added, therefore, it remains constant. If the slew rate exceeds 4.5 V/ns, functionality is uncertain. 22. READs and WRITEs with auto precharge must not be issued until tRAS (MIN) can be satisfied prior to the internal PRECHARGE command being issued. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications - AC Operating Conditions 23. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in reduction of the product lifetime. 24. The refresh period equals 64ms. This equates to an average refresh rate of 7.8125s. 25. This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. 26. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic low) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS. 27. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 28. At least 1 clock cycle is required during tWR time when in auto precharge mode. 29. Clock must be toggled a minimum of two times during the tXSR period. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Output Drive Characteristics Table 12: Target Output Drive Characteristics (Full Strength) Notes 1-2 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 2.80 18.53 -2.80 -18.53 0.20 5.60 26.80 -5.60 -26.80 0.30 8.40 32.80 -8.40 -32.80 0.40 11.20 37.05 -11.20 -37.05 0.50 14.00 40.00 -14.00 -40.00 0.60 16.80 42.50 -16.80 -42.50 0.70 19.60 44.57 -19.60 -44.57 0.80 22.40 46.50 -22.40 -46.50 0.85 23.80 47.48 -23.80 -47.48 0.90 23.80 48.50 -23.80 -48.50 0.95 23.80 49.40 -23.80 -49.40 1.00 23.80 50.05 -23.80 -50.05 1.10 23.80 51.35 -23.80 -51.35 1.20 23.80 52.65 -23.80 -52.65 1.30 23.80 53.95 -23.80 -53.95 1.40 23.80 55.25 -23.80 -55.25 1.50 23.80 56.55 -23.80 -56.55 1.60 23.80 57.85 -23.80 -57.85 1.70 23.80 59.15 -23.80 -59.15 1.80 - 60.45 - -60.45 1.90 - 61.75 - -61.75 Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. Based on nominal impedance of 25 (full strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Table 13: Target Output Drive Characteristics (Three-Quarter Strength) Notes 1-3 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 1.96 12.97 -1.96 -12.97 0.20 3.92 18.76 -3.92 -18.76 0.30 5.88 22.96 -5.88 -22.96 0.40 7.84 25.94 -7.84 -25.94 0.50 9.80 28.00 -9.80 -28.00 0.60 11.76 29.75 -11.76 -29.75 0.70 13.72 31.20 -13.72 -31.20 0.80 15.68 32.55 -15.68 -32.55 0.85 16.66 33.24 -16.66 -33.24 0.90 16.66 33.95 -16.66 -33.95 0.95 16.66 34.58 -16.66 -34.58 1.00 16.66 35.04 -16.66 -35.04 1.10 16.66 35.95 -16.66 -35.95 1.20 16.66 36.86 -16.66 -36.86 1.30 16.66 37.77 -16.66 -37.77 1.40 16.66 38.68 -16.66 -38.68 1.50 16.66 39.59 -16.66 -39.59 1.60 16.66 40.50 -16.66 -40.50 1.70 16.66 41.41 -16.66 -41.41 1.80 - 42.32 - -42.32 1.90 - 43.23 - -43.23 Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. Based on nominal impedance of 37 (three-quarter drive strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 3. Contact factory for availability of three-quarter drive strength. 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Table 14: 1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength) Notes 1-3 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 1.96 9.38 -1.96 -9.38 0.20 3.92 12.97 -3.92 -12.97 0.30 5.88 15.87 -5.88 -15.87 0.40 7.84 18.33 -7.84 -18.33 0.50 9.80 20.34 -9.80 -20.34 0.60 11.10 22.63 -11.10 -22.63 0.70 11.10 25.03 -11.10 -25.03 0.80 11.10 27.14 -11.10 -27.14 0.90 11.10 29.91 -11.10 -29.91 1.00 11.10 32.18 -11.10 -32.18 1.10 11.10 34.95 -11.10 -34.95 1.20 11.10 37.78 -11.10 -37.78 1.30 - 40.58 - -40.58 Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. Based on nominal impedance of 37 (three-quarter drive strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 3. Contact factory for availability of three-quarter drive strength. 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Table 15: Target Output Drive Characteristics (One-Half Strength) Notes 1-3 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 1.27 8.42 -1.27 -8.42 0.20 2.55 12.30 -2.55 -12.30 0.30 3.82 14.95 -3.82 -14.95 0.40 5.09 16.84 -5.09 -16.84 0.50 6.36 18.20 -6.36 -18.20 0.60 7.64 19.30 -7.64 -19.30 0.70 8.91 20.30 -8.91 -20.30 0.80 10.16 21.20 -10.16 -21.20 0.85 10.80 21.60 -10.80 -21.60 0.90 10.80 22.00 -10.80 -22.00 0.95 10.80 22.45 -10.80 -22.45 1.00 10.80 22.73 -10.80 -22.73 1.10 10.80 23.21 -10.80 -23.21 1.20 10.80 23.67 -10.80 -23.67 1.30 10.80 24.14 -10.80 -24.14 1.40 10.80 24.61 -10.80 -24.61 1.50 10.80 25.08 -10.80 -25.08 1.60 10.80 25.54 -10.80 -25.54 1.70 10.80 26.01 -10.80 -26.01 1.80 - 26.48 - -26.48 1.90 - 26.95 - -26.95 Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. Based on nominal impedance of 55 (one-half drive strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 3. The I-V curve for one-quarter drive strength is approximately 50% of one-half drive strength. 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Functional Description Functional Description The Mobile LPDDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O. Single read or write access for the device consists of a single 2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clockcycle data transfers at the I/O. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the device during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 device has two data strobes, one for the lower byte and one for the upper byte; the x32 device has four data strobes, one per byte. The LPDDR device operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Read and write accesses to the device are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The device provides for programmable READ or WRITE burst lengths of 2, 4, 8, or 16. An auto precharge function can be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of LPDDR supports concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation time. An auto refresh mode is provided, along with a power-saving power-down mode. Deep power-down mode is offered to achieve maximum power reduction by eliminating the power of the memory array. Data will not be retained after the device enters deep power-down mode. Two self refresh features, temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR), offer additional power savings. TCSR is controlled by the automatic on-chip temperature sensor. PASR can be customized using the extended mode register settings. The two features can be combined to achieve even greater power savings. The DLL that is typically used on standard DDR devices is not necessary on LPDDR devices. It has been omitted to save power. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands Commands A quick reference for available commands is provided in Table 16 and Table 17 (page 37), followed by a written description of each command. Three additional truth tables (Table 18 (page 43), Table 19 (page 45), and Table 20 (page 47)) provide CKE commands and current/next state information. Table 16: Truth Table - Commands CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN; all states and sequences not shown are reserved and/or illegal Name (Function) CS# RAS# CAS# WE# Address Notes DESELECT (NOP) H X X X X 1 NO OPERATION (NOP) L H H ACTIVE (select bank and activate row) L L H H X 1 H Bank/row 2 READ (select bank and column, and start READ burst) L H L H Bank/column 3 WRITE (select bank and column, and start WRITE burst) L H L L Bank/column 3 BURST TERMINATE or DEEP POWER-DOWN (enter deep power-down mode) L H H L X 4, 5 PRECHARGE (deactivate row in bank or banks) L L H L Code 6 AUTO REFRESH (refresh all or single bank) or SELF REFRESH (enter self refresh mode) L L L H X 7, 8 LOAD MODE REGISTER L L L L Op-code 9 Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. DESELECT and NOP are functionally interchangeable. 2. BA0-BA1 provide bank address and A[0:I] provide row address (where I = the most significant address bit for each configuration). 3. BA0-BA1 provide bank address; A[0:I] provide column address (where I = the most significant address bit for each configuration); A10 HIGH enables the auto precharge feature (nonpersistent); A10 LOW disables the auto precharge feature. 4. Applies only to READ bursts with auto precharge disabled; this command is undefined and should not be used for READ bursts with auto precharge enabled and for WRITE bursts. 5. This command is a BURST TERMINATE if CKE is HIGH and DEEP POWER-DOWN if CKE is LOW. 6. A10 LOW: BA0-BA1 determine which bank is precharged. A10 HIGH: all banks are precharged and BA0-BA1 are "Don't Care." 7. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW. 8. Internal refresh counter controls row addressing; in self refresh mode all inputs and I/Os are "Don't Care" except for CKE. 9. BA0-BA1 select the standard mode register, extended mode register, or status register. 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands Table 17: DM Operation Truth Table DM DQ Notes Write enable Name (Function) L Valid 1, 2 Write inhibit H X 1, 2 1. Used to mask write data; provided coincident with the corresponding data. 2. All states and sequences not shown are reserved and/or illegal. Notes: DESELECT The DESELECT function (CS# HIGH) prevents new commands from being executed by the device. Operations already in progress are not affected. NO OPERATION The NO OPERATION (NOP) command is used to instruct the selected device to perform a NOP. This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. LOAD MODE REGISTER The mode registers are loaded via inputs A[0:n]. See mode register descriptions in Standard Mode Register and Extended Mode Register. The LOAD MODE REGISTER command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. ACTIVE The ACTIVE command is used to activate a row in a particular bank for a subsequent access. The values on the BA0 and BA1 inputs select the bank, and the address provided on inputs A[0:n] selects the row. This row remains active for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands Figure 10: ACTIVE Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address Row BA0, BA1 Bank Don't Care READ The READ command is used to initiate a burst read access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where I = the most significant column address bit for each configuration) selects the starting column location. The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands Figure 11: READ Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address Column EN AP A10 DIS AP BA0, BA1 Bank Don't Care 1. EN AP = enable auto precharge; DIS AP = disable auto precharge. Note: WRITE The WRITE command is used to initiate a burst write access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where I = the most significant column address bit for each configuration) selects the starting column location. The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. Input data appearing on the DQ is written to the memory array, subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. If a WRITE or a READ is in progress, the entire data burst must be complete prior to stopping the clock (see Clock Change Frequency (page 96)). A burst completion for WRITEs is defined when the write postamble and tWR or tWTR are satisfied. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands Figure 12: WRITE Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address Column EN AP A10 DIS AP BA0, BA1 Bank Don't Care Note: 1. EN AP = enable auto precharge; DIS AP = disable auto precharge. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks will be precharged, and in the case where only one bank is precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as "Don't Care." After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands Figure 13: PRECHARGE Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address All banks A10 Single bank BA0, BA1 Bank Don't Care 1. If A10 is HIGH, bank address becomes "Don't Care." Note: BURST TERMINATE The BURST TERMINATE command is used to truncate READ bursts with auto precharge disabled. The most recently registered READ command prior to the BURST TERMINATE command will be truncated, as described in READ Operation. The open page from which the READ was terminated remains open. AUTO REFRESH AUTO REFRESH is used during normal operation of the device and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH command is nonpersistent and must be issued each time a refresh is required. Addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during an AUTO REFRESH command. For improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. The auto refresh period begins when the AUTO REFRESH command is registered and ends tRFC later. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Commands SELF REFRESH The SELF REFRESH command is used to place the device in self refresh mode; self refresh mode is used to retain data in the memory device while the rest of the system is powered down. When in self refresh mode, the device retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command, except that CKE is disabled (LOW). After the SELF REFRESH command is registered, all inputs to the device become "Don't Care" with the exception of CKE, which must remain LOW. Micron recommends that, prior to self refresh entry and immediately upon self refresh exit, the user perform a burst auto refresh cycle for the number of refresh rows. Alternatively, if a distributed refresh pattern is used, this pattern should be immediately resumed upon self refresh exit. DEEP POWER-DOWN The DEEP POWER-DOWN (DPD) command is used to enter DPD mode, which achieves maximum power reduction by eliminating the power to the memory array. Data will not be retained when the device enters DPD mode. The DPD command is the same as a BURST TERMINATE command with CKE LOW. Figure 14: DEEP POWER-DOWN Command CK# CK CKE CS# RAS# CAS# WE# Address BA0, BA1 Don't Care PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Truth Tables Truth Tables Table 18: Truth Table - Current State Bank n - Command to Bank n Notes 1-6 apply to all parameters in this table Current State CS# RAS# CAS# WE# Command/Action Any Idle Row active Read (auto precharge disabled) Write (auto precharge disabled) Notes H X X X DESELECT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) L L H H ACTIVE (select and activate row) L L L H AUTO REFRESH L L L L LOAD MODE REGISTER 7 L H L H READ (select column and start READ burst) 10 L H L L WRITE (select column and start WRITE burst) 10 L L H L PRECHARGE (deactivate row in bank or banks) 8 L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE (truncate READ burst, start PRECHARGE) 8 L H H L BURST TERMINATE 9 L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE (truncate WRITE burst, start PRECHARGE) Notes: 7 10 10, 12 10, 11 10 8, 11 1. This table applies when CKEn - 1 was HIGH, CKEn is HIGH and after tXSR has been met (if the previous state was self refresh), after tXP has been met (if the previous state was power-down), or after a full initialization (if the previous state was deep power-down). 2. This table is bank-specific, except where noted (for example, the current state is for a specific bank and the commands shown are supported for that bank when in that state). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated with auto precharge disabled and has not yet terminated or been terminated. Write: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated or been terminated. 4. The states listed below must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or supported commands to the other bank, must be issued on any clock edge occurring during these states. Supported commands to any other bank are determined by that bank's current state. Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank will be in the idle state. Row activating: Starts with registration of an ACTIVE command and ends when tRCD is met. After tRCD is met, the bank will be in the row active state. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Truth Tables Read with auto-precharge enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. Write with auto-precharge enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. 5. The states listed below must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC is met. After tRFC is met, the device will be in the all banks idle state. Accessing mode register: Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met. After tMRD is met, the device will be in the all banks idle state. Precharging all: Starts with registration of a PRECHARGE ALL command and ends when is met. After tRP is met, all banks will be in the idle state. All states and sequences not shown are illegal or reserved. Not bank-specific; requires that all banks are idle, and bursts are not in progress. May or may not be bank-specific; if multiple banks need to be precharged, each must be in a valid state for precharging. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of bank. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. Requires appropriate DM masking. A WRITE command can be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE command. tRP 6. 7. 8. 9. 10. 11. 12. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Truth Tables Table 19: Truth Table - Current State Bank n - Command to Bank m Notes 1-6 apply to all parameters in this table Current State CS# RAS# CAS# WE# Command/Action Any H X X X DESELECT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) Idle X X X X Any command supported to bank m Row activating, active, or precharging L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) Read (auto precharge disabled) Write (auto precharge disabled) Read (with auto precharge) Write (with auto precharge) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) Notes 7 7 L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE Notes: 1. This table applies when CKEn - 1 was HIGH, CKEn is HIGH and after tXSR has been met (if the previous state was self refresh), after tXP has been met (if the previous state was power-down) or after a full initialization (if the previous state was deep power-down). 2. This table describes alternate bank operation, except where noted (for example, the current state is for bank n and the commands shown are those supported for issue to bank m, assuming that bank m is in such a state that the given command is supported). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated and has not yet terminated or been terminated. Write: A WRITE burst has been initiated and has not yet terminated or been terminated. 3a. Both the read with auto precharge enabled state or the write with auto precharge enabled state can be broken into two parts: the access period and the precharge period. For read with auto precharge, the precharge period is defined as if the same burst was PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Truth Tables executed with auto precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For write with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. The access period starts with registration of the command and ends when the precharge period (or tRP) begins. This device supports concurrent auto precharge such that when a read with auto precharge is enabled or a write with auto precharge is enabled, any command to other banks is supported, as long as that command does not interrupt the read or write data transfer already in process. In either case, all other related limitations apply (i.e., contention between read data and write data must be avoided). 3b. The minimum delay from a READ or WRITE command (with auto precharge enabled) to a command to a different bank is summarized below. From Command Minimum Delay (with Concurrent Auto Precharge) To Command WRITE with Auto Precharge READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE ACTIVE [1 + (BL/2)] tCK + tWTR (BL/2) tCK 1 tCK 1 tCK READ with Auto Precharge READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE ACTIVE (BL/2) x tCK [CL + (BL/2)] tCK 1 tCK 1 tCK 4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all banks are idle. 5. All states and sequences not shown are illegal or reserved. 6. Requires appropriate DM masking. 7. A WRITE command can be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE command. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Truth Tables Table 20: Truth Table - CKE Notes 1-4 apply to all parameters in this table Current State CKEn - 1 CKEn COMMANDn ACTIONn Notes Active power-down L L X Maintain active power-down Deep power-down L L X Maintain deep power-down Precharge power-down L L X Maintain precharge power-down Self refresh L L X Maintain self refresh Active power-down L H DESELECT or NOP Exit active power-down 5 Deep power-down L H DESELECT or NOP Exit deep power-down 6 Precharge power-down L H DESELECT or NOP Exit precharge power-down Self refresh L H DESELECT or NOP Exit self refresh Bank(s) active H L DESELECT or NOP Active power-down entry All banks idle H L BURST TERMINATE Deep power-down entry All banks idle H L DESELECT or NOP Precharge power-down entry All banks idle H L AUTO REFRESH Self refresh entry H H See Table 19 (page 45) H H See Table 19 (page 45) Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 5, 7 1. CKEn is the logic state of CKE at clock edge n; CKEn - 1 was the state of CKE at the previous clock edge. 2. Current state is the state of the DDR SDRAM immediately prior to clock edge n. 3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn. 4. All states and sequences not shown are illegal or reserved. 5. DESELECT or NOP commands should be issued on each clock edge occurring during the tXP or tXSR period. 6. After exiting deep power-down mode, a full DRAM initialization sequence is required. 7. The clock must toggle at least two times during the tXSR period. 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM State Diagram State Diagram Figure 15: Simplified State Diagram Power on Power applied Self refresh DPDX PRE Deep powerdown PREALL SRR Idle: all banks precharged LMR LMR EMR READ SRR DPD LMR READ SREFX SREF Auto refresh AREF CKEL CKEH Active powerdown Precharge powerdown ACT CKEH CKEL Row active Burst terminate READ WRITE BST WRITE WRITE A READ READ A READ WRITING READING WRITE WRITE A WRITING PRE READ A WRITE A PRE PRE PRE READ A READING Precharging Automatic sequence Command sequence ACT = ACTIVE AREF = AUTO REFRESH BST = BURST TERMINATE CKEH = Exit power-down CKEL = Enter power-down DPD = Enter deep power-down PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN DPDX = Exit deep power-down EMR = LOAD EXTENDED MODE REGISTER LMR = LOAD MODE REGISTER PRE = PRECHARGE PREALL = PRECHARGE all banks READ = READ w/o auto precharge 48 READ A = READ w/ auto precharge SREF = Enter self refresh SREFX = Exit self refresh SRR = STATUS REGISTER READ WRITE = WRITE w/o auto precharge WRITE A = WRITE w/ auto precharge Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Initialization Initialization Prior to normal operation, the device must be powered up and initialized in a predefined manner. Using initialization procedures other than those specified will result in undefined operation. If there is an interruption to the device power, the device must be re-initialized using the initialization sequence described below to ensure proper functionality of the device. To properly initialize the device, this sequence must be followed: 1. The core power (VDD) and I/O power (VDDQ) must be brought up simultaneously. It is recommended that V DD and V DDQ be from the same power source, or V DDQ must never exceed V DD. Standard initialization requires that CKE be asserted HIGH (see Figure 16 (page 50)). Alternatively, initialization can be completed with CKE LOW provided that CKE transitions HIGH tIS prior to T0 (see Figure 17 (page 51)). 2. When power supply voltages are stable and the CKE has been driven HIGH, it is safe to apply the clock. 3. When the clock is stable, a 200s minimum delay is required by the Mobile LPDDR prior to applying an executable command. During this time, NOP or DESELECT commands must be issued on the command bus. 4. Issue a PRECHARGE ALL command. 5. Issue NOP or DESELECT commands for at least tRP time. 6. Issue an AUTO REFRESH command followed by NOP or DESELECT commands for at least tRFC time. Issue a second AUTO REFRESH command followed by NOP or DESELECT commands for at least tRFC time. Two AUTO REFRESH commands must be issued. Typically, both of these commands are issued at this stage as described above. 7. Using the LOAD MODE REGISTER command, load the standard mode register as desired. 8. Issue NOP or DESELECT commands for at least tMRD time. 9. Using the LOAD MODE REGISTER command, load the extended mode register to the desired operating modes. Note that the sequence in which the standard and extended mode registers are programmed is not critical. 10. Issue NOP or DESELECT commands for at least tMRD time. After steps 1-10 are completed, the device has been properly initialized and is ready to receive any valid command. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Initialization Figure 16: Initialize and Load Mode Registers (( )) VDD (( )) VDDQ T1 T0 CK# (( )) (( )) CK LVCMOS HIGH LEVEL CKE (( )) (( )) Command1 (( )) (( )) tCH tIS NOP2 tCL Ta0 Tb0 Tc0 Td0 Te0 Tf0 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) tIH PRE NOP tCK (( )) (( )) (( )) (( )) AR AR (( )) (( )) LMR (( )) (( )) LMR (( )) (( )) ACT3 (( )) (( )) DM (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) Address (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) A10 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) BA0, BA1 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) DQS (( )) High-Z (( )) (( )) (( )) (( )) (( )) (( )) DQ (( )) High-Z (( )) (( )) (( )) (( )) (( )) (( )) tRFC4 tRFC4 tMRD4 (( )) (( )) tIS All banks tIS T = 200s tIH tRP4 Power-up: VDD and CK stable Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN (( )) (( )) Op-code (( )) (( )) Row (( )) (( )) (( )) (( )) Op-code (( )) (( )) Row (( )) (( )) (( )) (( )) BA0 = L, BA1 = H (( )) (( )) Bank (( )) (( )) tIH Op-code tIS (( )) (( )) tIH Op-code tIS (( )) (( )) NOP3 tIH BA0 = L, BA1 = L Load standard mode register tMRD4 Load extended mode register Don't Care 1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO REFRESH command; ACT = ACTIVE command. 2. NOP or DESELECT commands are required for at least 200s. 3. Other valid commands are possible. 4. NOPs or DESELECTs are required during this time. 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Initialization Figure 17: Alternate Initialization with CKE LOW (( )) VDD (( )) VDDQ T1 T0 CK# (( )) (( )) CK tCH tCL tIS CKE 1 Command LVCMOS LOW level 2 NOP (( )) (( )) (( )) (( )) tIS Ta0 Tb0 Tc0 Td0 Te0 Tf0 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) tIH NOP PRE (( )) (( )) (( )) (( )) AR AR (( )) (( )) LMR (( )) (( )) LMR (( )) (( )) ACT3 (( )) (( )) NOP3 T = 200s Don't Care Power up: VDD and CK stable Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO REFRESH command; ACT = ACTIVE command. 2. NOP or DESELECT commands are required for at least 200s. 3. Other valid commands are possible. 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Standard Mode Register The standard mode register bit definition enables the selection of burst length, burst type, CAS latency (CL), and operating mode, as shown in Figure 18. Reserved states should not be used as this may result in setting the device into an unknown state or cause incompatibility with future versions of LPDDR devices. The standard mode register is programmed via the LOAD MODE REGISTER command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is programmed again, until the device goes into deep power-down mode, or until the device loses power. Reprogramming the mode register will not alter the contents of the memory, provided it is performed correctly. The mode register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait tMRD before initiating the subsequent operation. Violating any of these requirements will result in unspecified operation. Figure 18: Standard Mode Register Definition BA1 BA0 An ... A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 n + 2 n + 1 n ... 10 9 8 Operating Mode 0 0 7 6 5 4 3 2 1 0 CAS Latency BT Burst Length 0 0 Standard mode register 0 1 Status register 0 0 1 0 Extended mode register 0 1 1 Reserved 0 M2 M1 M0 M3 = 0 M3 = 1 0 Reserved Reserved 0 1 2 2 1 0 4 4 0 1 1 8 8 1 0 0 16 16 1 0 1 Reserved Reserved 0 0 0 0 0 Normal operation 1 1 0 Reserved Reserved - - - - - All other states reserved 1 1 1 Reserved Reserved Mn ... M10 M9 M8 M7 Operating Mode M6 M5 M4 0 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Standard mode register (Mx) Burst Length Mn + 2 Mn + 1 Mode Register Definition Note: Address bus 0 0 CAS Latency M3 Reserved 0 Sequential 1 Interleaved 0 0 1 Reserved 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved Burst Type 1. The integer n is equal to the most significant address bit. 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Burst Length Read and write accesses to the device are burst-oriented, and the burst length (BL) is programmable. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4, 8, or 16 locations are available for both sequential and interleaved burst types. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap when a boundary is reached. The block is uniquely selected by A[i:1] when BL = 2, by A[i:2] when BL = 4, by A[i:3] when BL = 8, and by A[i:4] when BL = 16, where Ai is the most significant column address bit for a given configuration. The remaining (least significant) address bits are used to specify the starting location within the block. The programmed burst length applies to both READ and WRITE bursts. Burst Type Accesses within a given burst can be programmed to be either sequential or interleaved via the standard mode register. The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address. Table 21: Burst Definition Table Burst Length Order of Accesses Within a Burst Starting Column Address 2 Type = Interleaved 0 0-1 0-1 1 1-0 1-0 A0 4 8 16 Type = Sequential A3 A1 A0 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 A2 A1 A0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 1 1 1 A2 A1 A0 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Table 21: Burst Definition Table (Continued) Burst Length Order of Accesses Within a Burst Starting Column Address Type = Sequential Type = Interleaved 0 0 0 0 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 0 0 0 1 1-2-3-4-5-6-7-8-9-A-B-C-D-E-F-0 1-0-3-2-5-4-7-6-9-8-B-A-D-C-F-E 0 0 1 0 2-3-4-5-6-7-8-9-A-B-C-D-E-F-0-1 2-3-0-1-6-7-4-5-A-B-8-9-E-F-C-D 0 0 1 1 3-4-5-6-7-8-9-A-B-C-D-E-F-0-1-2 3-2-1-0-7-6-5-4-B-A-9-8-F-E-D-C 0 1 0 0 4-5-6-7-8-9-A-B-C-D-E-F-0-1-2-3 4-5-6-7-0-1-2-3-C-D-E-F-8-9-A-B 0 1 0 1 5-6-7-8-9-A-B-C-D-E-F-0-1-2-3-4 5-4-7-6-1-0-3-2-D-C-F-E-9-8-B-A 0 1 1 0 6-7-8-9-A-B-C-D-E-F-0-1-2-3-4-5 6-7-4-5-2-3-0-1-E-F-C-D-A-B-8-9 0 1 1 1 7-8-9-A-B-C-D-E-F-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0-F-E-D-C-B-A-9-8 1 0 0 0 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 1 0 0 1 9-A-B-C-D-E-F-0-1-2-3-4-5-6-7-8 9-8-B-A-D-C-F-E-1-0-3-2-5-4-7-6 1 0 1 0 A-B-C-D-E-F-0-1-2-3-4-5-6-7-8-9 A-B-8-9-E-F-C-D-2-3-0-1-6-7-4-5 1 0 1 1 B-C-D-E-F-0-1-2-3-4-5-6-7-8-9-A B-A-9-8-F-E-D-C-3-2-1-0-7-6-5-4 1 1 0 0 C-D-E-F-0-1-2-3-4-5-6-7-8-9-A-B C-D-E-F-8-9-A-B-4-5-6-7-0-1-2-3 1 1 0 1 D-E-F-0-1-2-3-4-5-6-7-8-9-A-B-C D-C-F-E-9-8-B-A-5-4-7-6-1-0-3-2 1 1 1 0 E-F-0-1-2-3-4-5-6-7-8-9-A-B-C-D E-F-C-D-A-B-8-9-6-7-4-5-2-3-0-1 1 1 1 1 F-0-1-2-3-4-5-6-7-8-9-A-B-C-D-E F-E-D-C-B-A-9-8-7-6-5-4-3-2-1-0 CAS Latency The CAS latency (CL) is the delay, in clock cycles, between the registration of a READ command and the availability of the first output data. The latency can be set to 2 or 3 clocks, as shown in Figure 19 (page 55). For CL = 3, if the READ command is registered at clock edge n, then the data will be nominally available at (n + 2 clocks + tAC). For CL = 2, if the READ command is registered at clock edge n, then the data will be nominally available at (n + 1 clock + tAC). PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Figure 19: CAS Latency CK# T0 T1 READ NOP T1n T2 T2n T3 T3n CK Command NOP NOP tAC CL - 1 CL = 2 DQS DQ CK# DOUT n DOUT n+1 DOUT n+2 DOUT n+3 T2n T3 T3n T0 T1 T2 READ NOP NOP CK Command NOP tAC CL - 1 CL = 3 DQS DOUT n DQ Transitioning Data DOUT n+1 Don't Care Operating Mode The normal operating mode is selected by issuing a LOAD MODE REGISTER command with bits A[n:7] each set to zero, and bits A[6:0] set to the desired values. All other combinations of values for A[n:7] are reserved for future use. Reserved states should not be used because unknown operation or incompatibility with future versions may result. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Extended Mode Register Extended Mode Register The EMR controls additional functions beyond those set by the mode registers. These additional functions include drive strength, TCSR, and PASR. The EMR is programmed via the LOAD MODE REGISTER command with BA0 = 0 and BA1 = 1. Information in the EMR will be retained until it is programmed again, the device goes into deep power-down mode, or the device loses power. Figure 20: Extended Mode Register BA1 BA0 An n+ 2 n+ 1 n 0 1 En + 2 En + 1 0 0 0 1 1 0 1 1 En 0 - Mode Register Definition Standard mode register Status register Extended mode register Reserved ... 0 - E10 E9 0 0 - - E8 0 - E7-E0 Valid - ... A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 9 ... 10 Operation E7 0 0 0 0 1 1 1 1 8 7 E6 0 0 1 1 0 0 1 1 E5 0 1 0 1 0 1 0 1 6 DS 5 4 3 TCSR1 2 1 PASR A0 0 Address bus Extended mode register (Ex) Drive Strength Full strength 1/2 strength 1/4 strength 3/4 strength 3/4 strength Reserved Reserved Reserved Normal AR operation All other states reserved E2 0 0 E1 0 0 E0 0 1 Partial-Array Self Refresh Coverage Full array 1/2 array 0 0 1 1 1 1 1 1 0 0 1 1 0 1 0 1 0 1 1/4 array Reserved Reserved 1/8 array 1/16 array Reserved 1. On-die temperature sensor is used in place of TCSR. Setting these bits will have no effect. 2. The integer n is equal to the most significant address bit. Notes: Temperature-Compensated Self Refresh This device includes a temperature sensor that is implemented for automatic control of the self refresh oscillator. Programming the temperature-compensated self refresh (TCSR) bits will have no effect on the device. The self refresh oscillator will continue to refresh at the optimal factory-programmed rate for the device temperature. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Extended Mode Register Partial-Array Self Refresh For further power savings during self refresh, the partial-array self refresh (PASR) feature enables the controller to select the amount of memory to be refreshed during self refresh. The refresh options include: * * * * * Full array: banks 0, 1, 2, and 3 One-half array: banks 0 and 1 One-quarter array: bank 0 One-eighth array: bank 0 with row address most significant bit (MSB) = 0 One-sixteenth array: bank 0 with row address MSB = 0 and row address MSB - 1 = 0 READ and WRITE commands can still be issued to the full array during standard operation, but only the selected regions of the array will be refreshed during self refresh. Data in regions that are not selected will be lost. Output Drive Strength Because the device is designed for use in smaller systems that are typically point-topoint connections, an option to control the drive strength of the output buffers is provided. Drive strength should be selected based on the expected loading of the memory bus. The output driver settings are 25, 37, and 55 internal impedance for full, threequarter, and one-half drive strengths, respectively. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Status Read Register Status Read Register The status read register (SRR) is used to read the manufacturer ID, revision ID, refresh multiplier, width type, and density of the device, as shown in Figure 22 (page 59). The SRR is read via the LOAD MODE REGISTER command with BA0 = 1 and BA1 = 0. The sequence to perform an SRR command is as follows: 1. The device must be properly initialized and in the idle or all banks precharged state. 2. Issue a LOAD MODE REGISTER command with BA[1:0] = 01 and all address pins set to 0. 3. Wait tSRR; only NOP or DESELECT commands are supported during the tSRR time. 4. Issue a READ command. 5. Subsequent commands to the device must be issued tSRC after the SRR READ command is issued; only NOP or DESELECT commands are supported during tSRC. SRR output is read with a burst length of 2. SRR data is driven to the outputs on the first bit of the burst, with the output being "Don't Care" on the second bit of the burst. Figure 21: Status Read Register Timing CK# T0 T1 T2 CK Command T3 T4 T5 T6 tSRR PRE1 NOP LMR T8 tSRC NOP2 READ NOP NOP NOP Valid tRP Address 0 BA0 = 1 BA1 = 0 BA0, BA1 CL = 33 DQS Note 5 SRR out4 DQ Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. All banks must be idle prior to status register read. 2. NOP or DESELECT commands are required between the LMR and READ commands (tSRR), and between the READ and the next VALID command (tSRC). 3. CAS latency is predetermined by the programming of the mode register. CL = 3 is shown as an example only. 4. Burst length is fixed to 2 for SRR regardless of the value programmed by the mode register. 5. The second bit of the data-out burst is a "Don't Care." 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Status Read Register Figure 22: Status Register Definition DQ31...DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 S31..S16 S15 S14 S13 S12 S11 S10 S9 S8 15 14 13 12 11 10 9 31..16 8 Type Width Refresh Rate Density Reserved1 S15 S14 S13 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 1 0 1 0 1 1 1 0 1 S12 0 1 128Mb 256Mb 512Mb 1Gb 2Gb Reserved Reserved Reserved LPDDR LPDDR2 S10 0 0 0 S9 0 0 1 S8 0 1 0 0 1 1 1 1 0 0 1 1 0 1 0 1 1 1 S7 S6 S5 S4 S3 S2 S1 S0 0 7 6 5 4 3 2 1 Revision ID Manufacturer ID Density Device Type S11 0 1 Device Width 16 bits 32 bits Refresh Multiplier2 Reserved Reserved Reserved 2X 1X Reserved 0.25X Reserved Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN DQ0 S7 0 S6 0 S5 0 S4 0 ... ... ... ... X X X X I/O bus (CLK L->H edge) Status register Manufacturer ID Reserved S3 0 0 0 S2 0 0 0 S1 0 0 1 S0 0 1 0 0 0 0 0 0 1 1 1 1 1 0 0 1 0 1 0 0 1 1 1 Infineon Elpida Reserved Reserved Reserved Reserved 1 1 1 1 0 0 0 0 0 0 Winbond 0 1 1 1 0 1 ESMT NVM Reserved 1 1 0 0 Reserved 1 1 1 1 1 1 0 1 1 1 0 1 Reserved Reserved Micron Samsung Revision ID The manufacturer's revision number starts at `0000' and increments by `0001' each time a change in the specification (AC timings or feature set), IBIS (pullup or pull-down characteristics), or process occurs. 1. Reserved bits should be set to 0 for future compatibility. 2. Refresh multiplier is based on the memory device on-board temperature sensor. Required average periodic refresh interval = tREFI x multiplier. 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Bank/Row Activation Bank/Row Activation Before any READ or WRITE commands can be issued to a bank within the device, a row in that bank must be opened. This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see the ACTIVE Command figure). After a row is opened with the ACTIVE command, a READ or WRITE command can be issued to that row, subject to the tRCD specification. A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been precharged. The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation READ Operation READ burst operations are initiated with a READ command, as shown in Figure 11 (page 39). The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the READ commands used in the following illustrations, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address will be available following the CL after the READ command. Each subsequent data-out element will be valid nominally at the next positive or negative clock edge. Figure 23 (page 62) shows general timing for each possible CL setting. DQS is driven by the device along with output data. The initial LOW state on DQS is known as the read preamble; the LOW state coincident with the last data-out element is known as the read postamble. The READ burst is considered complete when the read postamble is satisfied. Upon completion of a burst, assuming no other commands have been initiated, the DQ will go to High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window is depicted in Figure 30 (page 69) and Figure 31 (page 70). A detailed explanation of tDQSCK (DQS transition skew to CK) and tAC (data-out transition skew to CK) is depicted in Figure 32 (page 71). Data from any READ burst can be truncated by a READ or WRITE command to the same or alternate bank, by a BURST TERMINATE command, or by a PRECHARGE command to the same bank, provided that the auto precharge mode was not activated. Data from any READ burst can be concatenated with or truncated with data from a subsequent READ command. In either case, a continuous flow of data can be maintained. The first data element from the new burst either follows the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new READ command should be issued x cycles after the first READ command, where x equals the number of desired data element pairs (pairs are required by the 2n-prefetch architecture). This is shown in Figure 24 (page 63). A READ command can be initiated on any clock cycle following a previous READ command. Nonconsecutive read data is shown in Figure 25 (page 64). Full-speed random read accesses within a page (or pages) can be performed as shown in Figure 26 (page 65). Data from any READ burst can be truncated with a BURST TERMINATE command, as shown in Figure 27 (page 66). The BURST TERMINATE latency is equal to the READ (CAS) latency; for example, the BURST TERMINATE command should be issued x cycles after the READ command, where x equals the number of desired data element pairs (pairs are required by the 2n-prefetch architecture). Data from any READ burst must be completed or truncated before a subsequent WRITE command can be issued. If truncation is necessary, the BURST TERMINATE command must be used, as shown in Figure 28 (page 67). A READ burst can be followed by, or truncated with, a PRECHARGE command to the same bank, provided that auto precharge was not activated. The PRECHARGE command should be issued x cycles after the READ command, where x equals the number of desired data element pairs. This is shown in Figure 29 (page 68). Following the PRECHARGE command, a subsequent PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation command to the same bank cannot be issued until tRP is met. Part of the row precharge time is hidden during the access of the last data elements. Figure 23: READ Burst CK# T0 T1 READ NOP T1n T2 T2n T3 T3n T4 T5 NOP NOP T4 T5 NOP NOP CK Command Address NOP NOP Bank a, Col n CL = 2 DQS DQ CK# DOUT n1 T0 T1 T2 READ NOP NOP DOUT n + 1 DOUT n + 2 T2n T3 DOUT n + 3 T3n CK Command Address NOP Bank a, Col n CL = 3 DQS DQ DOUT n DOUT n + 1 DOUT n + 2 DOUT n + 3 Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. DOUT n = data-out from column n. 2. BL = 4. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 24: Consecutive READ Bursts T0 T1 Command READ NOP Address Bank, Col n CK# T1n T2 T2n T3 T3n T4 T4n T5 T5n CK READ NOP NOP NOP Bank, Col b CL = 2 DQS DQ DOUT n1 DOUT n+1 T2n T0 T1 T2 Command READ NOP READ Address Bank, Col n CK# DOUT n+2 DOUT n+3 DOUT b T3 T3n T4 DOUT b+1 T4n DOUT b+2 T5 DOUT b+3 T5n CK NOP NOP NOP Bank, Col b CL = 3 DQS DOUT n DQ DOUT n+1 DOUT n+2 Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN DOUT n+3 DOUT b DOUT b+1 Transitioning Data 1. DOUTn (or b) = data-out from column n (or column b). 2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the first). 3. Shown with nominal tAC, tDQSCK, and tDQSQ. 4. Example applies only when READ commands are issued to same device. 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 25: Nonconsecutive READ Bursts T0 T1 Command READ NOP Address Bank, Col n CK# T1n T2 T2n T3 T3n T4 T4n T5 T5n T6 CK NOP NOP READ NOP NOP Bank, Col b CL = 2 CL = 2 DQS DOUT n1 DQ T0 T1 Command READ NOP Address Bank, Col n CK# T1n T2 DOUT n+1 T2n DOUT n+2 DOUT n+3 T3 T3n DOUT b T4 T4n T5 DOUT b+1 T5n DOUT b+2 T6 CK NOP READ NOP NOP NOP Bank, Col b CL = 3 CL = 3 DQS DOUT n DQ Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. DOUT n+1 DOUT n+3 DOUT b Don't Care Transitioning Data DOUT n+2 DOUTn (or b) = data-out from column n (or column b). BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first). Shown with nominal tAC, tDQSCK, and tDQSQ. Example applies when READ commands are issued to different devices or nonconsecutive READs. 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 26: Random Read Accesses T0 T1 Command READ READ READ READ Address Bank, Col n Bank, Col x Bank, Col b Bank, Col g CK# T1n T2 T2n T3 T3n T4 T4n T5 T5n CK NOP NOP CL = 2 DQS DQ CK# T0 T1 T1n DOUT n1 DOUT n+1 T2 T2n DOUT x DOUT x+1 DOUT b T3 T3n T4 DOUT b+1 T4n DOUT g T5 DOUT g+1 T5n CK Command READ READ READ READ Address Bank, Col n Bank, Col x Bank, Col b Bank, Col g NOP NOP CL = 3 DQS DOUT n DQ DOUT n+1 DOUT x Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. DOUT x+1 DOUT b DOUT b+1 Transitioning Data DOUTn (or x, b, g) = data-out from column n (or column x, column b, column g). BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous). READs are to an active row in any bank. Shown with nominal tAC, tDQSCK, and tDQSQ. 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 27: Terminating a READ Burst T0 T1 Command READ1 BST2 Address Bank a, Col n CK# T1n T2 T2n T3 T4 T5 NOP NOP NOP T4 T5 NOP NOP CK NOP CL = 2 DQS DOUT n DQ3 CK# T0 DOUT n+1 T1 T2 T2n BST2 NOP T3 T3n CK Command READ1 Address Bank a, Col n NOP CL = 3 DQS DOUT n DQ3 DOUT n+1 Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. 5. Transitioning Data BL = 4, 8, or 16. BST = BURST TERMINATE command; page remains open. DOUTn = data-out from column n. Shown with nominal tAC, tDQSCK, and tDQSQ. CKE = HIGH. 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 28: READ-to-WRITE CK# T0 T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n CK Command Address READ1 BST2 WRITE1 NOP Bank, Col n NOP NOP Bank, Col b tDQSS CL = 2 (NOM) DQS DOUT n DOUT n+1 T1 T2 T2n BST2 NOP DQ3,4 DIN b DIN b+1 DIN b+2 DIN b+3 T4 T4n T5 T5n DM CK# T0 T3 T3n CK Command Address READ1 WRITE1 NOP Bank, Col n NOP Bank, Col b tDQSS CL = 3 (NOM) DQS DOUT n DQ3,4 DOUT n+1 DIN b DIN b+1 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST command shown can be NOP). 2. BST = BURST TERMINATE command; page remains open. 3. DOUTn = data-out from column n. 4. DINb = data-in from column b. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. 6. CKE = HIGH. 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 29: READ-to-PRECHARGE CK# T0 T1 T1n T2 T2n T3 T3n T4 T5 NOP ACT3 CK Command READ1 Address Banka, Col n PRE2 NOP NOP Bank a, (a or all) Bank a, Row tRP CL = 2 DQS DQ4 CK# T0 T1 T1n DOUT n DOUT n+1 DOUT n+2 T2 T2n T3 DOUT n+3 T3n T4 T5 NOP ACT3 CK Command READ1 Address Banka, Col n PRE2 NOP NOP Bank a, (a or all) Bank a, Row tRP CL = 3 DQS DOUT n DQ4 DOUT n+1 DOUT n+2 Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. 5. 6. 7. DOUT n+3 Transitioning Data BL = 4, or an interrupted burst of 8 or 16. PRE = PRECHARGE command. ACT = ACTIVE command. DOUTn = data-out from column n. Shown with nominal tAC, tDQSCK, and tDQSQ. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out. A READ command with auto precharge enabled, provided tRAS (MIN) is met, would cause a precharge to be performed at x number of clock cycles after the READ command, where x = BL/2. 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 30: Data Output Timing - tDQSQ, tQH, and Data Valid Window (x16) CK# CK T1 T2 tHP1 tHP1 T2n T3 tHP1 tDQSQ2 tHP1 T3n tHP1 tDQSQ2 T4 tHP1 tDQSQ2 tDQSQ2 LDQS3 tQH5 tQH5 tQH5 Lower Byte DQ (Last data valid)4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (First data no longer valid)4 tQH5 DQ (Last data valid)4 T2 T2n T3 T3n DQ (First data no longer valid)4 T2 T2n T3 T3n DQ[7:0] and LDQS, collectively6 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window tDQSQ2 tDQSQ2 tDQSQ2 tDQSQ2 UDQS3 tQH5 tQH5 tQH5 Upper Byte DQ (Last data valid)7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ (First data no longer valid)7 tQH5 DQ (Last data valid)7 T2 T2n DQ (First data no longer valid)7 T2 T2n collectively6 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window DQ[15:8] and UDQS, Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN T3 T3 T3n T3n 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active. 2. tDQSQ is derived at each DQS clock edge and is not cumulative over time and begins with DQS transition and ends with the last valid DQ transition. 3. DQ transitioning after DQS transitions define the tDQSQ window. LDQS defines the lower byte and UDQS defines the upper byte. 4. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7. 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transitions and is defined as tQH - tDQSQ. 7. DQ8, DQ9, DQ10, DQ11, DQ12, DQ13, DQ14, or DQ15. 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 31: Data Output Timing - tDQSQ, tQH, and Data Valid Window (x32) CK# CK T1 T2 tHP1 tHP1 T2n tHP1 T3 tHP1 T3n T4 tHP1 tHP1 tDQSQ2,3 tDQSQ2,3 tDQSQ2,3 tDQSQ2,3 tQH5 tQH5 tQH5 tQH5 DQS0/DQS1/DQS2/DQS3 T2n T3 T3n DQ (First data no longer valid) T2 T2n T3 T3n DQ and DQS, collectively6,7 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Byte 3 T2 Byte 2 DQ (Last data valid) Byte 1 Byte 0 DQ (Last data valid)4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (First data no longer valid)4 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active. 2. DQ transitioning after DQS transitions define the tDQSQ window. 3. tDQSQ is derived at each DQS clock edge and is not cumulative over time; it begins with DQS transition and ends with the last valid DQ transition. 4. Byte 0 is DQ[7:0], byte 1 is DQ[15:8], byte 2 is DQ[23:16], byte 3 is DQ[31:24]. 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transition and is tQH - tDQSQ. 7. DQ[7:0] and DQS0 for byte 0; DQ[15:8] and DQS1 for byte 1; DQ[23:16] and DQS2 for byte 2; DQ[31:23] and DQS3 for byte 3. 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 32: Data Output Timing - tAC and tDQSCK CK# T0 T1 T2 NOP1 NOP1 T3 T2n T3n T4 T4n T5 T5n T6 CK Command READ NOP1 NOP1 NOP1 NOP1 CL = 3 tLZ tHZ tDQSCK tDQSCK tRPRE tRPST DQS or LDQS/UDQS2 tLZ All DQ values, collectively3 T2 tAC4 T2n T3 tAC4 T3n T4 T4n T5 T5n tHZ Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. Commands other than NOP can be valid during this cycle. DQ transitioning after DQS transitions define tDQSQ window. All DQ must transition by tDQSQ after DQS transitions, regardless of tAC. tAC is the DQ output window relative to CK and is the long-term component of DQ skew. 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation WRITE Operation WRITE bursts are initiated with a WRITE command, as shown in Figure 12 (page 40). The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the WRITE commands used in the following illustrations, auto precharge is disabled. Basic data input timing is shown in Figure 33 (page 73) (this timing applies to all WRITE operations). Input data appearing on the data bus is written to the memory array subject to the state of data mask (DM) inputs coincident with the data. If DM is registered LOW, the corresponding data will be written; if DM is registered HIGH, the corresponding data will be ignored, and the write will not be executed to that byte/column location. DM operation is illustrated in Figure 34 (page 74). During WRITE bursts, the first valid data-in element will be registered on the first rising edge of DQS following the WRITE command, and subsequent data elements will be registered on successive edges of DQS. The LOW state of DQS between the WRITE command and the first rising edge is known as the write preamble; the LOW state of DQS following the last data-in element is known as the write postamble. The WRITE burst is complete when the write postamble and tWR or tWTR are satisfied. The time between the WRITE command and the first corresponding rising edge of DQS (tDQSS) is specified with a relatively wide range (75%-125% of one clock cycle). All WRITE diagrams show the nominal case. Where the two extreme cases (that is, tDQSS [MIN] and tDQSS [MAX]) might not be obvious, they have also been included. Figure 35 (page 75) shows the nominal case and the extremes of tDQSS for a burst of 4. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will be ignored. Data for any WRITE burst can be concatenated with or truncated by a subsequent WRITE command. In either case, a continuous flow of input data can be maintained. The new WRITE command can be issued on any positive edge of clock following the previous WRITE command. The first data element from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new WRITE command should be issued x cycles after the first WRITE command, where x equals the number of desired data element pairs (pairs are required by the 2n-prefetch architecture). Figure 36 (page 76) shows concatenated bursts of 4. An example of nonconsecutive WRITEs is shown in Figure 37 (page 76). Full-speed random write accesses within a page or pages can be performed, as shown in Figure 38 (page 77). Data for any WRITE burst can be followed by a subsequent READ command. To follow a WRITE without truncating the WRITE burst, tWTR should be met, as shown in Figure 39 (page 78). Data for any WRITE burst can be truncated by a subsequent READ command, as shown in Figure 40 (page 79). Note that only the data-in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in Figure 41 (page 80). Data for any WRITE burst can be followed by a subsequent PRECHARGE command. To follow a WRITE without truncating the WRITE burst, tWR should be met, as shown in Figure 42 (page 81). PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Data for any WRITE burst can be truncated by a subsequent PRECHARGE command, as shown in Figure 43 (page 82) and Figure 44 (page 83). Note that only the data-in pairs that are registered prior to the tWR period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in Figure 43 (page 82) and Figure 44 (page 83). After the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Figure 33: Data Input Timing T01 CK# T1 T1n T2 T2n T3 CK tDSH2 tDQSS tDSS3 tDSH2 tDSS3 tDQSL tDQSH tWPST DQS4 tWPRES tWPRE DIN b DQ DM5 tDS tDH Transitioning Data Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. Don't Care WRITE command issued at T0. (MIN) generally occurs during tDQSS (MIN). tDSS (MIN) generally occurs during tDQSS (MAX). For x16, LDQS controls the lower byte; UDQS controls the upper byte. For x32, DQS0 controls DQ[7:0], DQS1 controls DQ[15:8], DQS2 controls DQ[23:16], and DQS3 controls DQ[31:24]. 5. For x16, LDM controls the lower byte; UDM controls the upper byte. For x32, DM0 controls DQ[7:0], DM1 controls DQ[15:8], DM2 controls DQ[23:16], and DM3 controls DQ[31:24]. tDSH 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 34: Write - DM Operation CK T1 T0 CK# tIS tIH tIS tIH T2 tCH tCK T3 T4 WRITE2 NOP1 T4n T5 T5n T6 T7 NOP1 NOP11 T8 tCL CKE Command NOP1 ACTIVE tIS Address NOP1 Row Col n Row tIS BA0, BA1 PRE3 tIH tIS A10 NOP1 tIH All banks Note 4 One bank tIH Bank x Bank x5 Bank x tRCD tDQSS tWR (NOM) tRP tRAS DQS tWPRE tWPRES DIN n DQ6 tDQSL tDQSH tWPST DIN n+2 DM tDS Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN tDH Don't Care Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. PRE = PRECHARGE. 4. Disable auto precharge. 5. Bank x at T8 is "Don't Care" if A10 is HIGH at T8. 6. DINn = data-in from column n. 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 35: WRITE Burst CK# T0 T1 T2 WRITE1,2 NOP NOP T2n T3 CK Command Address t DQSS (NOM) NOP Bank a, Col b tDQSS DQS DIN b DQ3 DIN b+1 DIN b+2 DIN b+3 DM t DQSS (MIN) tDQSS DQS DQ3 DIN b DIN b+1 DIN b+2 DIN b+3 DIN b DIN b+1 DIN b+2 DM t DQSS (MAX) tDQSS DQS DQ3 DIN b+3 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. An uninterrupted burst of 4 is shown. 2. A10 is LOW with the WRITE command (auto precharge is disabled). 3. DINb = data-in for column b. 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 36: Consecutive WRITE-to-WRITE CK# T0 T1 WRITE1, 2 NOP T1n T2 T2n T3 T3n T4 T4n T5 CK Command Address WRITE1, 2 Bank, Col b tDQSS NOP NOP NOP Bank, Col n (NOM) DQS DIN b DQ3 DIN b+1 DIN b+2 DIN b+3 DIN n DIN n+1 DIN n+2 DIN n+3 DM Don't Care Notes: Transitioning Data 1. Each WRITE command can be to any bank. 2. An uninterrupted burst of 4 is shown. 3. DINb (n) = data-in for column b (n). Figure 37: Nonconsecutive WRITE-to-WRITE CK# T0 T1 WRITE1, 2 NOP T1n T2 T2n T3 T4 T4n T5 T5n CK Command Address WRITE1,2 NOP Bank, Col b tDQSS NOP NOP Bank, Col n (NOM) DQS DIN b DQ3 DIN b+1 DIN b+2 DIN b+3 DIN n DIN n+1 DIN n+2 DIN n+3 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. Each WRITE command can be to any bank. 2. An uninterrupted burst of 4 is shown. 3. DINb (n) = data-in for column b (n). 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 38: Random WRITE Cycles CK# T0 T1 T1n T2 T2n T3 T3n T4 WRITE1,2 WRITE1,2 WRITE1,2 WRITE1,2 WRITE1,2 Bank, Col b Bank, Col x Bank, Col n Bank, Col a Bank, Col g T4n T5 T5n CK Command Address tDQSS NOP (NOM) DQS DIN b DQ3,4 DIN b' DIN x DIN x' DIN n DIN n' DIN a DIN a' DIN g DIN g' DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. Transitioning Data Each WRITE command can be to any bank. Programmed BL = 2, 4, 8, or 16 in cases shown. DINb (or x, n, a, g) = data-in for column b (or x, n, a, g). b' (or x, n, a, g) = the next data-in following DINb (x, n, a, g) according to the programmed burst order. 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 39: WRITE-to-READ - Uninterrupting CK# T0 T1 WRITE2,3 NOP T1n T2 T2n T3 T4 T5 READ NOP T5n T6 T6n CK Command1 NOP NOP NOP tWTR4 Address t DQSSnom Bank a, Col b Bank a, Col n tDQSS CL = 2 DQS DIN b DQ5 DIN b+1 DIN b+2 DIN b+3 DOUT n DOUT n+1 DOUT n DOUT n+1 DOUT n DOUT n+1 DM t DQSSmin tDQSS CL = 2 DQS DIN b DQ5 DIN b+1 DIN b+2 DIN b+3 DM t DQSSmax tDQSS CL = 2 DQS DIN b DQ5 DIN b+1 DIN b+2 DIN b+3 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. The READ and WRITE commands are to the same device. However, the READ and WRITE commands may be to different devices, in which case tWTR is not required and the READ command could be applied earlier. 2. A10 is LOW with the WRITE command (auto precharge is disabled). 3. An uninterrupted burst of 4 is shown. 4. tWTR is referenced from the first positive CK edge after the last data-in pair. 5. DINb = data-in for column b; DOUTn = data-out for column n. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 40: WRITE-to-READ - Interrupting CK# T0 T1 WRITE1,2 NOP T1n T2 T2n T3 T4 T5 NOP NOP T5n T6 T6n CK Command NOP READ NOP tWTR3 Address t DQSS (NOM) Bank a, Col b Bank a, Col n tDQSS CL = 3 DQS4 DIN b+1 DIN b DQ5 DOUT n DOUT n+1 DM t DQSS (MIN) tDQSS CL = 3 DQS4 DIN b DQ5 DIN b+1 DOUT n DOUT n+1 DM t DQSS (MAX) tDQSS CL = 3 DQS4 DIN b DQ5 DIN b+1 DOUT n DOUT n+1 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. 5. Transitioning Data An interrupted burst of 4 is shown; 2 data elements are written. A10 is LOW with the WRITE command (auto precharge is disabled). tWTR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T2 and T2n (nominal case) to register DM. DINb = data-in for column b; DOUTn = data-out for column n. 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 41: WRITE-to-READ - Odd Number of Data, Interrupting CK# T0 T1 WRITE2 NOP T1n T2 T2n T3 T4 T5 NOP NOP T5n T6 T6n CK Command1 NOP READ NOP tWTR3 Address t DQSS (NOM) Bank a, Col b Bank a, Col b tDQSS CL = 3 DQS4 DIN b DQ5 DOUT n DOUT n+1 DM t DQSS (MIN) tDQSS CL = 3 DQS4 DIN b DQ5 DOUT n DOUT n+1 DM t DQSS (MAX) tDQSS CL = 3 DQS4 DOUT n DIN b DQ5 DOUT n+1 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. 5. Transitioning Data An interrupted burst of 4 is shown; 1 data element is written, 3 are masked. A10 is LOW with the WRITE command (auto precharge is disabled). tWTR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T2 and T2n (nominal case) to register DM. DINb = data-in for column b; DOUTn = data-out for column n. 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 42: WRITE-to-PRECHARGE - Uninterrupting CK# T0 T1 T1n WRITE2,4 NOP T2 T2n T3 T4 T5 T6 NOP NOP PRE3,4 NOP CK Command1 NOP tWR5 Address t DQSS (NOM) Bank a, Col b Bank (a or all) tDQSS DQS DIN b DQ6 DIN b+1 DIN b+2 DIN b+3 DM t DQSS (MIN) tDQSS DQS DIN b DQ6 DIN b+1 DIN b+2 DIN b+3 DIN b DIN b+1 DIN b+2 DM t DQSS tDQSS (MAX) DQS DQ6 DIN b+3 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. 2. 3. 4. An uninterrupted burst 4 of is shown. A10 is LOW with the WRITE command (auto precharge is disabled). PRE = PRECHARGE. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE and WRITE commands can be to different devices; in this case, tWR is not required and the PRECHARGE command can be applied earlier. 5. tWR is referenced from the first positive CK edge after the last data-in pair. 6. DINb = data-in for column b. 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 43: WRITE-to-PRECHARGE - Interrupting CK# T0 T1 T1n WRITE2 NOP T2 T2n T3 T3n T4 T4n T5 T6 NOP NOP CK Command1 NOP NOP PRE3 tWR4 Bank a, Col b Address t DQSS (NOM) Bank (a or all) tDQSS DQS5 DIN b DQ6 DIN b+1 DM t DQSS (MIN) tDQSS DQS5 DIN b DQ6 DIN b+1 DM t DQSS (MAX) tDQSS DQS5 DIN b DQ6 DIN b+1 DM Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. 5. 6. Transitioning Data An interrupted burst of 8 is shown; two data elements are written. A10 is LOW with the WRITE command (auto precharge is disabled). PRE = PRECHARGE. tWR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T4 and T4n to register DM. DINb = data-in for column b. 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 44: WRITE-to-PRECHARGE - Odd Number of Data, Interrupting CK# T0 T1 WRITE2 NOP T1n T2 T2n T3 T3n T4 T4n T5 T6 PRE3 NOP CK Command1 NOP NOP NOP tWR4 Address t DQSS (NOM) Bank a, Col b Bank (a or all) tDQSS DQS5, 6 DIN b DQ7 DM6 t DQSS (MIN) tDQSS DQS5, 6 DIN b DQ7 DM6 t DQSS (MAX) tDQSS DQS5, 6 DIN b DQ7 DM6 Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. 2. 3. 4. 5. 6. 7. Transitioning Data An interrupted burst of 8 is shown; one data element is written. A10 is LOW with the WRITE command (auto precharge is disabled). PRE = PRECHARGE. tWR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T4 and T4n to register DM. If a burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n. DINb = data-in for column b. 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM PRECHARGE Operation PRECHARGE Operation The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks will be precharged, and in the case where only one bank is precharged (A10 = LOW), inputs BA0 and BA1 select the bank. When all banks are precharged (A10 = HIGH), inputs BA0 and BA1 are treated as "Don't Care." After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command will be treated as a NOP if there is no open row in that bank (idle state), or if the previously open row is already in the process of precharging. Auto Precharge Auto precharge is a feature that performs the same individual bank PRECHARGE function described previously, without requiring an explicit command. This is accomplished by using A10 to enable auto precharge in conjunction with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or WRITE command is automatically performed upon completion of the READ or WRITE burst. Auto precharge is nonpersistent; it is either enabled or disabled for each individual READ or WRITE command. Auto precharge ensures that the precharge is initiated at the earliest valid stage within a burst. This earliest valid stage is determined as if an explicit PRECHARGE command was issued at the earliest possible time without violating tRAS (MIN), as described for each burst type in Table 19 (page 45). The READ with auto precharge enabled state or the WRITE with auto precharge enabled state can each be broken into two parts: the access period and the precharge period. The access period starts with registration of the command and ends where tRP (the precharge period) begins. For READ with auto precharge, the precharge period is defined as if the same burst was executed with auto precharge disabled, followed by the earliest possible PRECHARGE command that still accesses all the data in the burst. For WRITE with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. In addition, during a WRITE with auto precharge, at least one clock is required during tWR time. During the precharge period, the user must not issue another command to the same bank until tRP is satisfied. This device supports tRAS lock-out. In the case of a single READ with auto precharge or single WRITE with auto precharge issued at tRCD (MIN), the internal precharge will be delayed until tRAS (MIN) has been satisfied. Bank READ operations with and without auto precharge are shown in Figure 45 (page 86) and Figure 46 (page 87). Bank WRITE operations with and without auto precharge are shown in Figure 47 (page 88) and Figure 48 (page 89). PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Concurrent Auto Precharge This device supports concurrent auto precharge such that when a READ with auto precharge is enabled or a WRITE with auto precharge is enabled, any command to another bank is supported, as long as that command does not interrupt the read or write data transfer already in process. This feature enables the precharge to complete in the bank in which the READ or WRITE with auto precharge was executed, without requiring an explicit PRECHARGE command, thus freeing the command bus for operations in other banks. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 45: Bank Read - With Auto Precharge CK# T1 T0 T2 T3 T4 T5 T5n T6 T6n T7 T8 CK tIS tCK tIH tCH tCL CKE tIS Command tIH NOP1 ACTIVE NOP1 READ2 NOP1 NOP1 NOP1 NOP1 ACTIVE tIH tIS Address Row A10 Row Col n Row Note 3 Row tIS tIS BA0, BA1 tIH tIH Bank x Bank x Bank x tRCD tRP tRAS tRC DM CL = 2 Case 1: tAC (MIN) and tDQSCK (MIN) tDQSCK tRPRE (MIN) tRPST DQS4 tLZ tAC (MIN) (MIN) DOUT n DQ4,5 tLZ Case 2: tAC (MAX) and tDQSCK (MAX) DOUT n+1 DOUT x DOUT x+1 (MIN) tRPRE tDQSCK tRPST (MAX) DQS4 DOUT n DQ4,5 tAC (MAX) DOUT n+1 DOUT x tHZ DOUT x+1 (MAX) Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. Enable auto precharge. 4. Refer to Figure 30 (page 69) and Figure 31 (page 70) for detailed DQS and DQ timing. 5. DOUT n = data-out from column n. 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 46: Bank Read - Without Auto Precharge CK# T1 T0 T2 T3 T4 T5 T5n READ2 NOP1 PRE3 T6 T6n T7 T8 NOP1 ACTIVE CK tIS tIH tIS tIH tCK tCH tCL CKE Command NOP1 NOP1 ACTIVE tIS Row Address Col n tIS A10 NOP1 tIH Row Row tIH All banks Row Note 4 One bank tIS BA0, BA1 tIH Bank x Bank x5 Bank x Bank x tRCD tRP tRAS6 tRC DM CL = 2 Case 1: tAC (MIN) and tDQSCK (MIN) tDQSCK tRPRE tRPST (MIN) DQS7 tLZ (MIN) tAC (MIN) DOUT n DQ7,8 tLZ DOUT n+1 DOUT n+2 DOUT n+3 (MIN) Case 2: tAC (MAX) and tDQSCK (MAX) tRPRE tDQSCK tRPST (MAX) DQS7 DOUT n DQ7,8 tAC (MAX) DOUT n+1 DOUT n+2 DOUT n+3 tHZ (MAX) Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. PRE = PRECHARGE. 4. Disable auto precharge. 5. Bank x at T5 is "Don't Care" if A10 is HIGH at T5. 6. The PRECHARGE command can only be applied at T5 if tRAS (MIN) is met. 7. Refer to Figure 30 (page 69) and Figure 31 (page 70) for DQS and DQ timing details. 8. DOUTn = data out from column n. 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 47: Bank Write - With Auto Precharge CK# CK T1 T0 tIS T2 tIH tCK T3 tCH T4 T4n T5 T5n T6 T7 T8 tCL CKE tIS Command tIH NOP4 NOP4 ACTIVE tIS WRITE2 NOP4 NOP4 NOP4 NOP4 NOP4 tIH Address Row A10 Row Col n Note 3 tIS BA0, BA1 tIS tIH tIH Bank x Bank x tRCD tDQSS tWR (NOM) tRP tRAS DQS tWPRE tWPRES tDQSL tDQSH tWPST DIN b DQ1 DM tDS Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN tDH Don't Care Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. Enable auto precharge. 4. DINn = data-out from column n. 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 48: Bank Write - Without Auto Precharge CK T1 T0 CK# tIS T2 tIH tCK T3 tCH T4 T4n T5 T5n T6 T7 T8 NOP1 NOP1 PRE3 tCL CKE tIS Command tIH NOP1 ACTIVE tIS Address NOP1 WRITE2 tIH Row Col n tIS A10 Row tIS BA0, BA1 NOP1 NOP1 tIH All banks Note 4 One bank tIH Bank x5 Bank x Bank x tWR tRCD tRP tRAS tDQSS (NOM) DQS tWPRES tWPRE tDQSL tDQSH tWPST DIN b DQ6 DM tDS tDH Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN Don't Care Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. PRE = PRECHARGE. 4. Disable auto precharge. 5. Bank x at T8 is "Don't Care" if A10 is HIGH at T8. 6. DOUTn = data-out from column n. 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM AUTO REFRESH Operation AUTO REFRESH Operation Auto refresh mode is used during normal operation of the device and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH command is nonpersistent and must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during an AUTO REFRESH command. For improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. The auto refresh period begins when the AUTO REFRESH command is registered and ends tRFC later. Figure 49: Auto Refresh Mode T0 T2 T1 T3 T4 CK# CK tIS tCK tIH CKE tCL tIH NOP 2 NOP2 PRE Ta0 Ta1 )) (( )) Valid tIS Command1 tCH (( )) (( )) NOP2 AR )) (( )) NOP2, 3 AR4 (( )) (( )) Tb0 )) (( )) Valid (( )) (( )) NOP2, 3 Tb1 Tb2 NOP2 ACTIVE (( )) (( )) (( )) (( )) Row (( )) (( )) (( )) (( )) Row (( )) (( )) (( )) (( )) Bank DQS6 (( )) (( )) (( )) (( )) DQ6 (( )) (( )) (( )) (( )) DM6 (( )) (( )) (( )) (( )) Address All banks A10 One bank BA0, BA1 Bank(s)5 tRP tRFC tRFC4 Don't Care 1. PRE = PRECHARGE; AR = AUTO REFRESH. 2. NOP commands are shown for ease of illustration; other commands may be valid during this time. CKE must be active during clock positive transitions. 3. NOP or COMMAND INHIBIT are the only commands supported until after tRFC time; CKE must be active during clock positive transitions. 4. The second AUTO REFRESH is not required and is only shown as an example of two back-to-back AUTO REFRESH commands. 5. Bank x at T1 is "Don't Care" if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (for example, must precharge all active banks). 6. DM, DQ, and DQS signals are all "Don't Care"/High-Z for operations shown. Notes: Although it is not a JEDEC requirement, CKE must be active (HIGH) during the auto refresh period to provide support for future functional features. The auto refresh period begins when the AUTO REFRESH command is registered and ends tRFC later. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM SELF REFRESH Operation SELF REFRESH Operation The SELF REFRESH command can be used to retain data in the device while the rest of the system is powered down. When in self refresh mode, the device retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command, except that CKE is disabled (LOW). All command and address input signals except CKE are "Don't Care" during self refresh. During self refresh, the device is refreshed as defined in the extended mode register. (see Partial-Array Self Refresh (page 57).) An internal temperature sensor adjusts the refresh rate to optimize device power consumption while ensuring data integrity. (See Temperature-Compensated Self Refresh (page 56).) The procedure for exiting self refresh requires a sequence of commands. First, CK must be stable prior to CKE going HIGH. When CKE is HIGH, the device must have NOP commands issued for tXSR to complete any internal refresh already in progress. During SELF REFRESH operation, refresh intervals are scheduled internally and may vary. These refresh intervals may differ from the specified tREFI time. For this reason, the SELF REFRESH command must not be used as a substitute for the AUTO REFRESH command. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 50: Self Refresh Mode T0 CK# T1 CK1 tCH tIS tIH tCL tCKE tIS CKE1,2 tIS Command Ta01 Ta1 tCK tIS AR3 (( )) (( )) (( )) (( )) NOP (( )) (( )) Address (( )) (( )) (( )) (( )) DQS (( )) (( )) (( )) (( )) DQ (( )) (( )) (( )) (( )) DM (( )) (( )) (( )) (( )) tRP4 Tb0 (( )) (( )) (( )) tIH NOP (( )) (( )) Valid tIS tIH Valid tXSR5 Enter self refresh mode Exit self refresh mode Don't Care 1. Clock must be stable, cycling within specifications by Ta0, before exiting self refresh mode. 2. CKE must remain LOW to remain in self refresh. 3. AR = AUTO REFRESH. 4. Device must be in the all banks idle state prior to entering self refresh mode. 5. Either a NOP or DESELECT command is required for tXSR time with at least two clock pulses. Notes: Power-Down Power-down is entered when CKE is registered LOW. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates all input and output buffers, including CK and CK# and excluding CKE. Exiting power-down requires the device to be at the same voltage as when it entered power-down and received a stable clock. Note that the power-down duration is limited by the refresh requirements of the device. When in power-down, CKE LOW must be maintained at the inputs of the device, while all other input signals are "Don't Care." The power-down state is synchronously exited when CKE is registered HIGH (in conjunction with a NOP or DESELECT command). NOP or DESELECT commands must be maintained on the command bus until tXP is satisfied. See Figure 52 (page 94) for a detailed illustration of power-down mode. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 51: Power-Down Entry (in Active or Precharge Mode) CK# CK CKE CS# RAS#, CAS#, WE# Or CS# RAS#, CAS#, WE# Address BA0, BA1 Don't Care PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 52: Power-Down Mode (Active or Precharge) T0 T1 T2 CK# CK tCK tIS tCH tIS tIH CKE tIS Command Address Ta1 tCKE NOP tIH Ta2 tXP1 (( )) (( )) NOP (( )) (( )) Valid DQS (( )) (( )) DQ (( )) (( )) DM (( )) (( )) Tb1 tCKE1 (( )) tIH Valid2 tIS tCL Ta0 (( )) (( )) Valid Valid Must not exceed refresh device limits No read/write Enter3 access in progress power-down mode Exit power-down mode Don't Care 1. tCKE applies if CKE goes LOW at Ta2 (entering power-down); tXP applies if CKE remains HIGH at Ta2 (exit power-down). 2. If this command is a PRECHARGE (or if the device is already in the idle state), then the power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at least 1 row is already active), then the power-down mode shown is active powerdown. 3. No column accesses can be in progress when power-down is entered. Notes: Deep Power-Down Deep power-down (DPD) is an operating mode used to achieve maximum power reduction by eliminating power to the memory array. Data will not be retained after the device enters DPD mode. Before entering DPD mode the device must be in the all banks idle state with no activity on the data bus (tRP time must be met). DPD mode is entered by holding CS# and WE# LOW with RAS# and CAS# HIGH at the rising edge of the clock while CKE is LOW. CKE must be held LOW to maintain DPD mode. The clock must be stable prior to exiting DPD mode. To exit DPD mode, assert CKE HIGH with either a NOP or DESELECT command present on the command bus. After exiting DPD mode, a full DRAM initialization sequence is required. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 53: Deep Power-Down Mode CK# T0 T1 Ta1 Ta2 Ta3 )) (( )) CK tCKE tIS CKE Command1 Ta01 T2 ( ( (( )) DPD2 NOP All banks idle with no activity on the data bus T = 200s (( )) (( )) NOP Enter deep power-down mode PRE3 NOP Exit deep power-down mode Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. Clock must be stable prior to CKE going HIGH. 2. DPD = deep power-down. 3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required. 95 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Clock Change Frequency Clock Change Frequency One method of controlling the power efficiency in applications is to throttle the clock that controls the device. The clock can be controlled by changing the clock frequency or stopping the clock. The device enables the clock to change frequency during operation only if all timing parameters are met and all refresh requirements are satisfied. The clock can be stopped altogether if there are no DRAM operations in progress that would be affected by this change. Any DRAM operation already in process must be completed before entering clock stop mode; this includes the following timings: tRCD, tRP, tRFC, tMRD, tWR, and tRPST. In addition, any READ or WRITE burst in progress must be complete. (See READ Operation and WRITE Operation.) CKE must be held HIGH with CK = LOW and CK# = HIGH for the full duration of the clock stop mode. One clock cycle and at least one NOP or DESELECT is required after the clock is restarted before a valid command can be issued. Figure 54: Clock Stop Mode Ta1 CK# CK CKE Ta2 Tb3 ( ( ) ) ( ( ) ) ( ( ) ) ( ( ) ) (( )) (( )) Command ( ( ) ) ( ( ) ) Address ( ( ) ) ( ( ) ) DQ, DQS (( )) (( )) NOP1 ( ( ) ) ( ( ) ) Valid (( )) (( )) (( )) (( )) (( )) ( ( ) ) 2 ( ( CMD ) ) CMD2 Tb4 Valid NOP NOP (( )) (( )) (( )) (( )) (( )) (( )) All DRAM activities must be complete Exit clock stop mode Enter clock stop mode Don't Care Notes: PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 1. Prior to Ta1, the device is in clock stop mode. To exit, at least one NOP is required before issuing any valid command. 2. Any valid command is supported; device is not in clock suspend mode. 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Revision History Revision History Rev. I, Production - 12/09 * Changed all tRFC values from 97.5ns to 72ns in Table 11 (page 26). Rev. H, Production - 03/09 * Added a note to the tCKE symbol in Table 11 (page 26). * Added a second paragraph to SELF REFRESH (page 42). * Added tCKE line to Figure 50 (page 92). Rev. G, Production - 02/09 * * * * Removed "60-Ball VFGBA" and "90-Ball VFGBA" columns from Table 3 (page 13). Updated step 1 and added Figure 17 (page 51) in Initialization (page 49). Updated Status Read Register (page 58). Deleted 80 from Output Drive Strength (page 57). Rev. F, Production - 10/08 * Added 1.2V I/O Option to the following: - - - - - "Features" and "Options" Figure 1: "512Mb Mobile DDR Part Numbering" Table 6: "1.2V I/O AC/DC Electrical Characteristics and Operating Conditions" Table 15: "1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength)" Figure 19: "Extended Mode Register" Rev. E, Production - 8/08 * Added 9mm x 13mm 90-ball package to the following: - "Options" - Figure 1: "512Mb Mobile DDR Part Numbering" - Figure 8: "90-Ball VFBGA Package (9mm x 13mm)," on page 14 Rev. D, Production - 05/08 * Updated Idd Values - Table 8: "Idd Specifications and Conditions (x16)," on page 19 - Table 9: "Idd Specifications and Conditions (x32)," on page 20 * Added "L" low-power option - Figure 1: "512Mb Mobile DDR Part Numbering," on page 5 - Table 10: "Idd6 Specifications and Conditions," on page 21 * Table 10: "Idd6 Specifications and Conditions," on page 21: Removed 70C and 15C values as they are redundant and shown in Figure 9, "Typical Idd6 Curves" * Table 11: "Electrical Characteristics and Recommended AC Operating Conditions:" - Changed the following specification: tRC -75 to 67.5ns - Removed note 21 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Revision History Rev. C, Production - 03/08 * * * * * * * * * * Added programmable burst length of 16 to "Features" Updated example cycle time to -6 in Figure 1: "512Mb Mobile DDR Part Numbering" Corrected Idd0 unit value to mA in Table 9, "Idd Specifications and Conditions (x32)" Added MAX values to Table 10, "Idd6 Specifications and Conditions" Added Figure 9: "Typical Idd6 Curves" Updated tDIPW (MIN) to 1.4ns, and tRC -54 (MIN) to 59.4 in Table 11, "Electrical Characteristics and Recommended AC Operating Conditions" Updated note 1 and notes references in Table 12, "Target Output Drive Characteristics (Full Strength)" Updated note 1 and table title in Table 13, "Target Output Drive Characteristics (Three-Quarter Strength)" Updated note 1 and deleted former note 4 in Table 14, "Target Output Drive Characteristics (One-Half Strength)" Updated document status to Production Rev. B, Preliminary - 12/07 * Updated to include -54 speed grade, including: - "Options" - Table 1, "Key Timing Parameters (CL = 3)" - Figure 1: "512Mb Mobile DDR Part Numbering" - Table 8, "Idd Specifications and Conditions (x16)" - Table 9, "Idd Specifications and Conditions (x32)" - Table 11, "Electrical Characteristics and Recommended AC Operating Conditions" * Updated all "TBDs" in the -5 columns of Table 8 and Table 9 * Changed Idd6A Max to 700A and changed Idd6c to "TBD" in Table 10 * Change revision back to Rev. B Rev. A, Advance - 7/07 * Initial release (released as "Rev M" in error) Revision History for Commands, Operations, and Timing Diagrams Update - 05/08 * Added 9mm x 13mm 90-ball package to the following: - "Options," Figure 1: "512Mb Mobile DDR Part Numbering," and Figure 8: "90-Ball VFBGA Package (9mm x 13mm)" Update - 05/08 * Updated Idd Values in Table 7: "Idd Specifications and Conditions (x16)" and Table 8: "Idd Specifications and Conditions (x32)" * Added "L" low-power option to Figure 1: "512Mb Mobile DDR Part Numbering" and Table 9: "Idd6 Specifications and Conditions" PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved. 512Mb: x16, x32 Mobile LPDDR SDRAM Revision History * Removed 70C and 15C values from Table 9: "Idd6 Specifications and Conditions" as they are redundant and are shown in Figure 9: "Typical Idd6 Curves" * Changed the following specification: tRC -75 to 67.5ns, and removed note 21 from Table 10: "Electrical Characteristics and Recommended AC Operating Conditions" Update - 03/08 * Added BL 16 to the "Functional Description" and Figure 19: "Extended Mode Register" and throughout document as appropriate: Added BL 16. * Added BL 16 content to Table 19, "Burst Definition Table" * Added three-quarter drive strength and deleted one-eighth drive strength, and updated to include 37 ohm (deleted 100 ohm) in "Output Drive Strength" * Removed E7 column and updated valid column heading to E7-E0; expanded driver strength section to include three-quarter drive strength in Figure 19: "Extended Mode Register" * Updated note 2 in the following: - Figure 23: "Consecutive READ Bursts" - Figure 24: "Nonconsecutive READ Bursts" - Figure 25: "Random READ Accesses" - Figure 26: "Terminating a READ Burst" - Figure 28: "READ-to-PRECHARGE" * Updated note 3 in the following: - Figure 27: "READ-to-WRITE" - Figure 37: "Random WRITE Cycles" * Removed final note in each of the following: - Figure 39: "WRITE-to-READ - Interrupting" - Figure 40: "WRITE-to-READ - Odd Number of Data, Interrupting" - Figure 42: "WRITE-to-PRECHARGE - Interrupting" * Extended tWR to coincide with T5 transition in Figure 43: "WRITE-to-PRECHARGE - Odd Number of Data, Interrupting" * Updated figure references for "Concurrent Auto Precharge" Update - 12/07 * Updated Figure 19, "Extended Mode Register," to include mid-strength driver information * Corrected headings for density in Figure 21: "Status Register Definition" Update - 07/07 * Initial Release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf - Rev. I 12/09 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2004 Micron Technology, Inc. All rights reserved.