9278019011327400 - MILL-MAX

Mobile Low-Power DDR SDRAM

MT46H32M16LF – 8 Meg x 16 x 4 Banks

MT46H16M32LF – 4 Meg x 32 x 4 Banks

Features

• VDD/VDDQ = 1.70–1.95V

• 1.2V I/O option VDDQ = 1.14–1.30V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR)architec-

ture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs;center-

aligned with data for WRITEs

• 4 internal banks for concurrent operation

• Data masks (DM) for masking write data—one mask

per byte

• Programmable burst lengths (BL): 2, 4, 8, or 16

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS-compatible inputs

• On-chip temp sensor to control self refresh rate

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Status read register (SRR)

• Selectable output drive strength (DS)

• Clock stop capability

• 64ms refresh

Table 1: Key Timing Parameters (CL = 3)

Speed Grade Clock Rate Access Time

-5 200 MHz 5.0ns

-54 185 MHz 5.0ns

-6 166 MHz 5.0ns

-75 133 MHz 6.0ns

Options Marking

• VDD/VDDQ

– 1.8V/1.8V H

– 1.8V/1.2V1HC

• Configuration

– 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16

– 16 Meg x 32 (4 Meg x 32 x 4 banks) 16M32

• Row-size option

– JEDEC-standard option LF

– Reduced page-size option1LG

• Plastic green package

– 60-ball VFBGA (8mm x 9mm)2BF

– 90-ball VFBGA (10mm x 13mm)3CM

– 90-ball VFBGA (9mm x 13mm)3CX

• Timing – cycle time

– 5ns @ CL = 3 -5

– 5.4ns @ CL = 3 -54

– 6ns @ CL = 3 -6

– 7.5ns @ CL = 3 -75

• Power

– Standard IDD2/IDD6 None

– Low-power IDD2/IDD61L

• Operating temperature range

– Commercial (0˚ to +70˚C) None

– Industrial (–40˚C to +85˚C) IT

• Design revision :B

Notes: 1. Contact factory for availability.

2. Only available for x16 configuration.

3. Only available for x32 configuration.

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Configuration Addressing

Architecture 32 Meg x 16 16 Meg x 32

Reduced Page Size

16 Meg x 32

Configuration 8 Meg x 16 x 4 banks 4 Meg x 32 x 4 banks 4 Meg x 32 x 4 banks

Refresh count 8K 8K 8K

Row addressing A[12:0] A[12:0] A[13:0]

Column addressing A[9:0] A[8:0] A[7:0]

Figure 1: 512Mb Mobile LPDDR Part Numbering

MT 46 H 32M16 LF BF -6 IT :C

Micron Technology

Product Family

46 = Mobile LPDDR

Operating Voltage

H = 1.8/1.8V

Configuration

32 Meg x 16

16 Meg x 32

Addressing

LF = JEDEC-standard

LG = Reduced page size

Package Codes

BF = 60-ball (8mm x 9mm) VFBGA, “green”

B5 = 90-ball (8mm x 13mm) VFBGA, “green”

Design Revision

:C = Third generation

Operating Temperature

Blank = Commercial (0°C to +70°C)

IT = Industrial (–40°C to +85°C)

AT = Automotive (–40°C to +105°C)

Power

Blank = Standard IDD2/IDD6

Cycle Time (CL = 3)

-5 = 5ns tCK

-54 = 5.4ns tCK

-6 = 6ns tCK

-75 = 7.5ns tCK

FBGA Part Marking Decoder

Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the

part number. Micron’s FBGA part marking decoder is available at www.micron.com/decoder.

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 2Micron Technology, Inc. reserves the right to change products or specifications without notice.

Contents

General Description ......................................................................................................................................... 8

Functional Block Diagrams ............................................................................................................................... 9

Ball Assignments and Descriptions ................................................................................................................. 11

Package Dimensions ....................................................................................................................................... 15

Electrical Specifications .................................................................................................................................. 18

Electrical Specifications – IDD Parameters ........................................................................................................ 22

Electrical Specifications – AC Operating Conditions ......................................................................................... 26

Output Drive Characteristics ........................................................................................................................... 31

Functional Description ................................................................................................................................... 35

Commands .................................................................................................................................................... 36

DESELECT ................................................................................................................................................. 37

NO OPERATION ......................................................................................................................................... 37

LOAD MODE REGISTER ............................................................................................................................. 37

ACTIVE ...................................................................................................................................................... 37

READ ......................................................................................................................................................... 38

WRITE ....................................................................................................................................................... 39

PRECHARGE .............................................................................................................................................. 40

BURST TERMINATE ................................................................................................................................... 41

AUTO REFRESH ......................................................................................................................................... 41

SELF REFRESH ........................................................................................................................................... 42

DEEP POWER-DOWN ................................................................................................................................. 42

Truth Tables ................................................................................................................................................... 43

State Diagram ................................................................................................................................................ 48

Initialization .................................................................................................................................................. 49

Standard Mode Register .................................................................................................................................. 52

Burst Length .............................................................................................................................................. 53

Burst Type .................................................................................................................................................. 53

CAS Latency ............................................................................................................................................... 54

Operating Mode ......................................................................................................................................... 55

Extended Mode Register ................................................................................................................................. 56

Temperature-Compensated Self Refresh ...................................................................................................... 56

Partial-Array Self Refresh ............................................................................................................................ 57

Output Drive Strength ................................................................................................................................ 57

Status Read Register ....................................................................................................................................... 58

Bank/Row Activation ...................................................................................................................................... 60

READ Operation ............................................................................................................................................. 61

WRITE Operation ........................................................................................................................................... 72

PRECHARGE Operation .................................................................................................................................. 84

Auto Precharge ............................................................................................................................................... 84

Concurrent Auto Precharge ......................................................................................................................... 85

AUTO REFRESH Operation ............................................................................................................................. 90

SELF REFRESH Operation ............................................................................................................................... 91

Power-Down .................................................................................................................................................. 92

Deep Power-Down ..................................................................................................................................... 94

Clock Change Frequency ................................................................................................................................ 96

Revision History ............................................................................................................................................. 97

Rev. I, Production – 12/09 ........................................................................................................................... 97

Rev. H, Production – 03/09 .......................................................................................................................... 97

Rev. G, Production – 02/09 .......................................................................................................................... 97

Rev. F, Production – 10/08 ........................................................................................................................... 97

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 3Micron Technology, Inc. reserves the right to change products or specifications without notice.

Rev. E, Production – 8/08 ............................................................................................................................ 97

Rev. D, Production – 05/08 .......................................................................................................................... 97

Rev. C, Production – 03/08 .......................................................................................................................... 98

Rev. B, Preliminary – 12/07 .......................................................................................................................... 98

Rev. A, Advance – 7/07 ................................................................................................................................ 98

Revision History for Commands, Operations, and Timing Diagrams ............................................................. 98

Update – 05/08 ........................................................................................................................................... 98

Update – 03/08 ........................................................................................................................................... 99

Update – 12/07 ........................................................................................................................................... 99

Update – 07/07 ........................................................................................................................................... 99

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 4Micron Technology, Inc. reserves the right to change products or specifications without notice.

List of Tables

Table 1: Key Timing Parameters (CL = 3) ........................................................................................................... 1

Table 2: Configuration Addressing ................................................................................................................... 2

Table 3: VFBGA Ball Descriptions ................................................................................................................... 13

Table 4: Absolute Maximum Ratings .............................................................................................................. 18

Table 5: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 18

Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions .................................................. 19

Table 7: Capacitance (x16, x32) ...................................................................................................................... 20

Table 8: IDD Specifications and Conditions (x16) ............................................................................................. 22

Table 9: IDD Specifications and Conditions (x32) ............................................................................................. 23

Table 10: IDD6 Specifications and Conditions .................................................................................................. 24

Table 11: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 26

Table 12: Target Output Drive Characteristics (Full Strength) ........................................................................... 31

Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 32

Table 14: 1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength) ............................................. 33

Table 15: Target Output Drive Characteristics (One-Half Strength) .................................................................. 34

Table 16: Truth Table – Commands ................................................................................................................ 36

Table 17: DM Operation Truth Table .............................................................................................................. 37

Table 18: Truth Table – Current State Bank n – Command to Bank n ................................................................ 43

Table 19: Truth Table – Current State Bank n – Command to Bank m ............................................................... 45

Table 20: Truth Table – CKE ........................................................................................................................... 47

Table 21: Burst Definition Table ..................................................................................................................... 53

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 5Micron Technology, Inc. reserves the right to change products or specifications without notice.

List of Figures

Figure 1: 512Mb Mobile LPDDR Part Numbering .............................................................................................. 2

Figure 2: Functional Block Diagram (x16) ......................................................................................................... 9

Figure 3: Functional Block Diagram (x32) ....................................................................................................... 10

Figure 4: 60-Ball VFBGA – 8mm x 9mm (Top View) ......................................................................................... 11

Figure 5: 90-Ball VFBGA – 10mm x 13mm and 9mm x 13mm (Top View) .......................................................... 12

Figure 6: 60-Ball VFBGA (8mm x 9mm) .......................................................................................................... 15

Figure 7: 90-Ball VFBGA (10mm x 13mm) ....................................................................................................... 16

Figure 8: 90-Ball VFBGA (9mm x 13mm) ......................................................................................................... 17

Figure 9: Typical Self Refresh Current vs. Temperature .................................................................................... 25

Figure 10: ACTIVE Command ........................................................................................................................ 38

Figure 11: READ Command ........................................................................................................................... 39

Figure 12: WRITE Command ......................................................................................................................... 40

Figure 13: PRECHARGE Command ................................................................................................................ 41

Figure 14: DEEP POWER-DOWN Command ................................................................................................... 42

Figure 15: Simplified State Diagram ............................................................................................................... 48

Figure 16: Initialize and Load Mode Registers ................................................................................................. 50

Figure 17: Alternate Initialization with CKE LOW ............................................................................................ 51

Figure 18: Standard Mode Register Definition ................................................................................................. 52

Figure 19: CAS Latency .................................................................................................................................. 55

Figure 20: Extended Mode Register ................................................................................................................ 56

Figure 21: Status Read Register Timing ........................................................................................................... 58

Figure 22: Status Register Definition .............................................................................................................. 59

Figure 23: READ Burst ................................................................................................................................... 62

Figure 24: Consecutive READ Bursts .............................................................................................................. 63

Figure 25: Nonconsecutive READ Bursts ........................................................................................................ 64

Figure 26: Random Read Accesses .................................................................................................................. 65

Figure 27: Terminating a READ Burst ............................................................................................................. 66

Figure 28: READ-to-WRITE ............................................................................................................................ 67

Figure 29: READ-to-PRECHARGE .................................................................................................................. 68

Figure 30: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x16) .................................................... 69

Figure 31: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x32) .................................................... 70

Figure 32: Data Output Timing – tAC and tDQSCK .......................................................................................... 71

Figure 33: Data Input Timing ......................................................................................................................... 73

Figure 34: Write – DM Operation .................................................................................................................... 74

Figure 35: WRITE Burst ................................................................................................................................. 75

Figure 36: Consecutive WRITE-to-WRITE ....................................................................................................... 76

Figure 37: Nonconsecutive WRITE-to-WRITE ................................................................................................. 76

Figure 38: Random WRITE Cycles .................................................................................................................. 77

Figure 39: WRITE-to-READ – Uninterrupting ................................................................................................. 78

Figure 40: WRITE-to-READ – Interrupting ...................................................................................................... 79

Figure 41: WRITE-to-READ – Odd Number of Data, Interrupting ..................................................................... 80

Figure 42: WRITE-to-PRECHARGE – Uninterrupting ....................................................................................... 81

Figure 43: WRITE-to-PRECHARGE – Interrupting ........................................................................................... 82

Figure 44: WRITE-to-PRECHARGE – Odd Number of Data, Interrupting .......................................................... 83

Figure 45: Bank Read – With Auto Precharge ................................................................................................... 86

Figure 46: Bank Read – Without Auto Precharge .............................................................................................. 87

Figure 47: Bank Write – With Auto Precharge .................................................................................................. 88

Figure 48: Bank Write – Without Auto Precharge ............................................................................................. 89

Figure 49: Auto Refresh Mode ........................................................................................................................ 90

Figure 50: Self Refresh Mode .......................................................................................................................... 92

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 6Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 51: Power-Down Entry (in Active or Precharge Mode) ........................................................................... 93

Figure 52: Power-Down Mode (Active or Precharge) ........................................................................................ 94

Figure 53: Deep Power-Down Mode ............................................................................................................... 95

Figure 54: Clock Stop Mode ........................................................................................................................... 96

512Mb: x16, x32 Mobile LPDDR SDRAM

Features

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 7Micron Technology, Inc. reserves the right to change products or specifications without notice.

General Description

The 512Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access mem-

ory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. Each

of the x16’s 134,217,728-bit banks is organized as 8,192 rows by 1,024 columns by 16

bits. Each of the x32’s 134,217,728-bit banks is organized as 8,192 rows by 512 columns

by 32 bits. In the reduced page-size (LG) option, each of the x32’s 134,217,728-bit banks

are organized as 16,384 rows by 256 columns by 32 bits.

Note:

1. Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ should

be interpreted as any and all DQ collectively, unless specifically stated otherwise. Addi-

tionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower

byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the upper byte

(DQ[15:8]), DM refers to UDM and DQS refers to UDQS. The x32 is divided into 4 bytes.

For DQ[7:0], DM refers to DM0 and DQS refers to DQS0. For DQ[15:8], DM refers to

DM1 and DQS refers to DQS1. For DQ[23:16], DM refers to DM2 and DQS refers to

DQS2. For DQ[31:24], DM refers to DM3 and DQS refers to DQS3.

2. Complete functionality is described throughout the document; any page or diagram

may have been simplified to convey a topic and may not be inclusive of all require-

ments.

3. Any specific requirement takes precedence over a general statement.

512Mb: x16, x32 Mobile LPDDR SDRAM

General Description

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 8Micron Technology, Inc. reserves the right to change products or specifications without notice.

Functional Block Diagrams

Figure 2: Functional Block Diagram (x16)

Row-

address

Mux

Control

logic

Column-

address

counter/

latch

Standard mode

Extended mode

Command

decode

Address

BA0, BA1

CKE

CK#

CS#

WE#

CAS#

RAS#

Address

I/O gating

DM mask logic

Column

decoder

Bank 0

memory

array

Bank 0

row-

address

latch

and

decoder

Bank

control

logic

Bank 1

Bank 2

Bank 3

Refresh

counter

Input

registers

RCVRS

out

Data

DQS

Mask

Data

DRVRS

MUX

DQS

generator

DQ[15:0]

LDQS,

UDQS

Read

latch

Write

FIFO

and

drivers

COL 0

Sense amplifiers

LDM,

UDM

512Mb: x16, x32 Mobile LPDDR SDRAM

Functional Block Diagrams

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 9Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 3: Functional Block Diagram (x32)

RAS#

CAS#

Row-

address

MUX

CS#

WE#

CK#

Control

logic

Column-

address

counter/

latch

Standard mode

Extended mode

Command

decode

Address,

BA0, BA1

CKE

Address

I/O gating

DM mask logic

Bank 0

memory

array

Bank 0

row-

address

latch

and

decoder

Bank

control

logic

Bank 1

Bank 2

Bank 3

Refresh

counter

Input

registers

RCVRS

out

Data

DQS

Mask

Data

DRVRS

MUX

DQS

generator

DQ[31:0]

DQS0

DQS1

DQS2

DQS3

Read

latch

Write

FIFO

and

drivers

COL 0

Sense amplifiers

DM0

DM1

DM2

DM3

Column

decoder

512Mb: x16, x32 Mobile LPDDR SDRAM

Functional Block Diagrams

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Ball Assignments and Descriptions

Figure 4: 60-Ball VFBGA – 8mm x 9mm (Top View)

1 2 3 4 6 7 8 95

VSSQ

DQ14

DQ12

DQ10

DQ8

CK#

A12

VSS

VDDQ

VSSQ

VDDQ

VSSQ

VSS

CKE

VSS

DQ15

DQ13

DQ11

DQ9

UDQS

UDM

A11

VDDQ

DQ1

DQ3

DQ5

DQ7

WE#

CS#

A10/AP

DQ0

DQ2

DQ4

DQ6

LDQS

LDM

CAS#

BA0

VDD

VSSQ

VDDQ

VDD

RAS#

BA1

VDD

TEST1

Note: 1. D9 is a test pin that must be tied to VSS or VSSQ in normal operations.

512Mb: x16, x32 Mobile LPDDR SDRAM

Ball Assignments and Descriptions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 5: 90-Ball VFBGA – 10mm x 13mm and 9mm x 13mm (Top View)

VSSQ

DQ30

DQ28

DQ26

DQ24

CK#

A12

DQ8

DQ10

DQ12

DQ14

VSSQ

VSS

VDDQ

VSSQ

VDDQ

VSSQ

VDD

CKE

VSSQ

VDDQ

VSSQ

VDDQ

VSS

DQ31

DQ29

DQ27

DQ25

DQS3

DM3

A11

DM1

DQS1

DQ9

DQ11

DQ13

DQ15

VDDQ

DQ17

DQ19

DQ21

DQ23

DNU/A13

WE#

CS#

A10/AP

DQ7

DQ5

DQ3

DQ1

VDDQ

DQ16

DQ18

DQ20

DQ22

DQS2

DM2

CAS#

BA0

DM0

DQS0

DQ6

DQ4

DQ2

DQ0

VDD

VSSQ

VDDQ

VSS

RAS#

BA1

VDDQ

VSSQ

VDDQ

VSSQ

VDD

1 2 3 4 6 7 8 95

TEST1

Note: 1. D9 is a test pin that must be tied to VSS or VSSQ in normal operations.

512Mb: x16, x32 Mobile LPDDR SDRAM

Ball Assignments and Descriptions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: VFBGA Ball Descriptions

Symbol Type Description

CK, CK# Input Clock: CK is the system clock input. CK and CK# are differential

clock inputs. All address and control input signals are sampled

on the crossing of the positive edge of CK and the negative

edge of CK#. Input and output data is referenced to the cross-

ing of CK and CK# (both directions of the crossing).

CKE Input Clock enable: CKE HIGH activates, and CKE LOW deactivates,

the internal clock signals, input buffers, and output drivers. Tak-

ing CKE LOW enables PRECHARGE power-down and SELF RE-

FRESH operations (all banks idle), or ACTIVE power-down (row

active in any bank). CKE is synchronous for all functions except

SELF REFRESH exit. All input buffers (except CKE) are disabled

during power-down and self refresh modes.

CS# Input Chip select: CS# enables (registered LOW) and disables (regis-

tered HIGH) the command decoder. All commands are masked

when CS# is registered HIGH. CS# provides for external bank se-

lection on systems with multiple banks. CS# is considered part

of the command code.

RAS#, CAS#,

WE#

Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define

the command being entered.

UDM, LDM

(60-ball)

DM[3:0]

(90-ball)

Input Input data mask: DM is an input mask signal for write data. In-

put data is masked when DM is sampled HIGH along with that

input data during a WRITE access. DM is sampled on both edges

of DQS. Although DM balls are input-only, the DM loading is

designed to match that of DQ and DQS balls.

BA0, BA1 Input Bank address inputs: BA0 and BA1 define to which bank an AC-

TIVE, READ, WRITE, or PRECHARGE command is being applied.

BA0 and BA1 also determine which mode register is loaded dur-

ing a LOAD MODE REGISTER command.

A[12:0]

(60-ball)

A[12:0]

(90-ball)

Input Address inputs: Provide the row address for ACTIVE commands,

and the column address and auto precharge bit (A10) for READ

or WRITE commands, to select one location out of the memory

array in the respective bank. During a PRECHARGE command,

A10 determines whether the PRECHARGE applies to one bank

(A10 LOW, bank selected by BA0, BA1) or all banks (A10 HIGH).

The address inputs also provide the op-code during a LOAD

MODE REGISTER command.

DQ[15:0]

(60-ball)

DQ[31:0]

(90-ball)

Input/

output

Data input/output: Data bus for x16 and x32.

LDQS, UDQS

(60-ball)

DQS[3:0]

(90-ball)

Input/

output

Data strobe: Output with read data, input with write data. DQS

is edge-aligned with read data, center-aligned in write data. It

is used to capture data.

512Mb: x16, x32 Mobile LPDDR SDRAM

Ball Assignments and Descriptions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: VFBGA Ball Descriptions (Continued)

Symbol Type Description

VDDQ Supply DQ power supply.

VSSQ Supply DQ ground.

VDD Supply Power supply.

VSS Supply Ground.

NC – No connect: May be left unconnected.

DNU/A13 Input Do not use. A13 if reduced page-size option is selected; other-

wise, DNU.

TEST Input Test pin: Must be tied to VSS or VSSQ in normal operations.

512Mb: x16, x32 Mobile LPDDR SDRAM

Ball Assignments and Descriptions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions

Figure 6: 60-Ball VFBGA (8mm x 9mm)

Micron logo

to be lased

ball A1 ID

Substrate material: plastic laminate

Mold compound: epoxy novolac

Solder ball material:

SAC105 (98.5% Sn, 1% Ag, 0.5% Cu)

Seating

plane

0.65 ±0.05

Dimensions apply

to solder balls

post-reflow. The

pre-reflow balls are

Ø0.42 on Ø0.4 SMD

ball pads.

0.1 AA

0.3 ±0.025

9 ±0.1

4.5 ±0.05

1.0 MAX

3.6

7.2

Ball A1 ID

0.8 TYP

8 ±0.1

3.2

4 ±0.05

6.4

60x Ø0.45

0.8 TYP

9 8 7 3 2 1

Note: 1. All dimensions are in millimeters.

512Mb: x16, x32 Mobile LPDDR SDRAM

Package Dimensions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 7: 90-Ball VFBGA (10mm x 13mm)

Ball A1 ID

1.0 MAX

Mold compound: epoxy novolac

Substrate material: plastic laminate

Solder ball material:

SAC105 (98.5% Sn, 1% Ag, 0.5% Cu)

0.8 TYP

5.6

0.65 ±0.05

Seating

plane

11.2

6.4

0.1 A

90X Ø0.45

Dimensions apply

to solder balls

post-reflow. The

pre-reflow balls

are Ø0.42 on Ø0.4

SMD ball pads.

13 ±0.1

Ball A1 ID

0.8 TYP

6.5 ±0.05

3.2

10 ±0.1

5 ±0.05

9 8 7 3 2 1

Note: 1. All dimensions are in millimeters.

512Mb: x16, x32 Mobile LPDDR SDRAM

Package Dimensions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 8: 90-Ball VFBGA (9mm x 13mm)

Ball A1 ID

Seating

plane

0.12 AA

0.65 ±0.1

1.0 MAX

0.25 MIN

9 8 7 3 2 1

9 ±0.1

Ball A1 ID

11.2

CTR

Solder ball

material: SAC105.

Dimensions apply

to solder balls post-

reflow on Ø0.4

SMD ball pads.

90X Ø0.45

13 ±0.1

0.8 TYP

6.4 CTR

0.8 TYP

Note: 1. All dimensions are in millimeters.

512Mb: x16, x32 Mobile LPDDR SDRAM

Package Dimensions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Electrical Specifications

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at these or any other condi-

tions above those indicated in the operational sections of this specification is not im-

plied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Table 4: Absolute Maximum Ratings

Note 1 applies to all parameters in this table

Parameter Symbol Min Max Unit

VDD/VDDQ supply voltage relative to VSS VDD/VDDQ –1.0 2.4 V

Voltage on any pin relative to VSS VIN –0.5 2.4 or (VDDQ + 0.3V),

whichever is less

Storage temperature (plastic) TSTG –55 +150 ˚C

Note: 1. VDD and VDDQ must be within 300mV of each other at all times. VDDQ must not exceed

VDD.

Table 5: AC/DC Electrical Characteristics and Operating Conditions

Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V

Parameter/Condition Symbol Min Max Unit Notes

Supply voltage VDD 1.70 1.95 V 6, 7

I/O supply voltage VDDQ 1.70 1.95 V 6, 7

Address and command inputs

Input voltage high VIH 0.8 × VDDQ VDDQ + 0.3 V 8, 9

Input voltage low VIL –0.3 0.2 × VDDQ V 8, 9

Clock inputs (CK, CK#)

DC input voltage VIN –0.3 VDDQ + 0.3 V 10

DC input differential voltage VID(DC) 0.4 × VDDQ VDDQ + 0.6 V 10, 11

AC input differential voltage VID(AC) 0.6 × VDDQ VDDQ + 0.6 V 10, 11

AC differential crossing voltage VIX 0.4 × VDDQ 0.6 × VDDQ V 10, 12

Data inputs

DC input high voltage VIH(DC) 0.7 × VDDQ VDDQ + 0.3 V 8, 9, 13

DC input low voltage VIL(DC) –0.3 0.3 × VDDQ V 8, 9, 13

AC input high voltage VIH(AC) 0.8 × VDDQ VDDQ + 0.3 V 8, 9, 13

AC input low voltage VIL(AC) –0.3 0.2 × VDDQ V 8, 9, 13

Data outputs

DC output high voltage: Logic 1 (IOH = –0.1mA) VOH 0.9 × VDDQ – V

DC output low voltage: Logic 0 (IOL = 0.1mA) VOL – 0.1 × VDDQ V

Leakage current

Input leakage current

Any input 0V ≤ VIN ≤ VDD

(All other pins not under test = 0V)

II–1 1 μA

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 5: AC/DC Electrical Characteristics and Operating Conditions (Continued)

Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V

Parameter/Condition Symbol Min Max Unit Notes

Output leakage current

(DQ are disabled; 0V ≤ VOUT ≤ VDDQ)

IOZ –5 5 μA

Operating temperature

Commercial TA0 +70 ˚C

Industrial TA–40 +85 ˚C

Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions

Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V

Parameter/Condition Symbol Min Max Unit Notes

Supply voltage VDD 1.70 1.95 V 6, 7

I/O supply voltage VDDQ 1.14 1.30 V 6, 7

Address and command inputs

Input voltage high VIH 0.9 × VDDQ VDDQ + 0.2 V 8, 9

Input voltage low VIL –0.2 0.1 × VDDQ V 8, 9

Clock inputs (CK, CK#)

DC input voltage VIN –0.2 VDDQ + 0.2 V 10

DC input differential voltage VID(DC) 0.4 × VDDQ VDDQ + 0.4 V 10, 11

AC input differential voltage VID(AC) 0.6 × VDDQ VDDQ + 0.4 V 10, 11

AC differential crossing voltage VIX 0.4 × VDDQ 0.6 × VDDQ V 10, 12

Data inputs

DC input high voltage VIH(DC) 0.8 × VDDQ VDDQ + 0.2 V 8, 9, 13

DC input low voltage VIL(DC) –0.2 0.2 × VDDQ V 8, 9, 13

AC input high voltage VIH(AC) 0.9 × VDDQ VDDQ + 0.2 V 8, 9, 13

AC input low voltage VIL(AC) –0.2 0.1 × VDDQ V 8, 9, 13

Data outputs

DC output high voltage: Logic 1 (IOH = –0.1mA) VOH 0.9 × VDDQ – V

DC output low voltage: Logic 0 (IOL = 0.1mA) VOL – 0.1 × VDDQ V

Leakage current

Input leakage current

Any input 0V ≤ VIN ≤ VDD

(All other pins not under test = 0V)

II–1 1 μA

Output leakage current

(DQ are disabled; 0V ≤ VOUT ≤ VDDQ)

IOZ –5 5 μA

Operating temperature

Commercial TA0 +70 ˚C

Industrial TA–40 +85 ˚C

Notes: 1. All voltages referenced to VSS.

2. All parameters assume proper device initialization.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.

3. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at

nominal supply voltage levels, but the related specifications and device operation are

guaranteed for the full voltage range specified.

4. Outputs measured with equivalent load; transmission line delay is assumed to be very

small:

I/O

20pF

I/O

10pF

Full drive strength Half drive strength

50 50

5. Timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment,

but input timing is still referenced to VDDQ/2 (or to the crossing point for CK/CK#). The

output timing reference voltage level is VDDQ/2.

6. Any positive glitch must be less than one-third of the clock cycle and not more than

+200mV or 2.0V, whichever is less. Any negative glitch must be less than one-third of the

clock cycle and not exceed either –150mV or +1.6V, whichever is more positive.

7. VDD and VDDQ must track each other and VDDQ must be less than or equal to VDD.

8. To maintain a valid level, the transitioning edge of the input must:

8a. Sustain a constant slew rate from the current AC level through to the target AC lev-

el, VIL(AC) Or VIH(AC).

8b. Reach at least the target AC level.

8c. After the AC target level is reached, continue to maintain at least the target DC lev-

el, VIL(DC) or VIH(DC).

9. VIH overshoot: VIH(MAX) = VDDQ + 1.0V for a pulse width ≤3ns and the pulse width cannot

be greater than one-third of the cycle rate. VIL undershoot: VIL(MIN) = –1.0V for a pulse

width ≤3ns and the pulse width cannot be greater than one-third of the cycle rate.

10. CK and CK# input slew rate must be ≥1 V/ns (2 V/ns if measured differentially).

11. VID is the magnitude of the difference between the input level on CK and the input lev-

el on CK#.

12. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track

variations in the DC level of the same.

13. DQ and DM input slew rates must not deviate from DQS by more than 10%. 50ps must

be added to tDS and tDH for each 100 mV/ns reduction in slew rate. If slew rate exceeds

4 V/ns, functionality is uncertain.

Table 7: Capacitance (x16, x32)

Note 1 applies to all the parameters in this table

Parameter Symbol Min Max Unit Notes

Input capacitance: CK, CK# CCK 2.0 4.0 pF

Delta input capacitance: CK, CK# CDCK – 0.5 pF 2

Input capacitance: command and address CI2.0 4.0 pF

Delta input capacitance: command and address CDI – 1.0 pF 2

Input/output capacitance: DQ, DQS, DM CIO 2.0 4.5 pF

Delta input/output capacitance: DQ, DQS, DM CDIO – 1.0 pF 3

Notes: 1. This parameter is sampled. VDD/VDDQ = 1.70–1.95V, f = 100 MHz, TA = 25˚C, VOUT(DC) =

VDDQ/2, VOUT (peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the

fact that they are matched in loading.

2. The input capacitance per pin group will not differ by more than this maximum amount

for any given device.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice.

3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-

mum amount for any given device.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Electrical Specifications – IDD Parameters

Table 8: IDD Specifications and Conditions (x16)

Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V

Parameter/Condition Symbol

Max

Unit Notes-5 -54 -6 -75

Operating 1 bank active precharge current: tRC = tRC (MIN); tCK =

tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Ad-

dress inputs are switching every 2 clock cycles; Data bus inputs

are stable

IDD0 70 65 60 50 mA 6

Precharge power-down standby current: All banks idle, CKE is

LOW; CS is HIGH, tCK = tCK (MIN); Address and control inputs are

switching; Data bus inputs are stable

IDD2P 300 300 300 300 μA 7, 8

Precharge power-down standby current: Clock stopped; All banks

idle; CKE is LOW; CS is HIGH; CK = LOW, CK# = HIGH; Address and

control inputs are switching; Data bus inputs are stable

IDD2PS 300 300 300 300 μA 7

Precharge nonpower-down standby current: All banks idle CKE =

HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are

switching; Data bus inputs are stable

IDD2N 15 15 15 12 mA 9

Precharge nonpower-down standby current: Clock stopped; All

banks idle, CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Ad-

dress and control inputs are switching; Data bus inputs are stable

IDD2NS 8 8 8 8 mA 9

Active power-down standby current: 1 bank active, CKE = LOW;

CS = HIGH; tCK = tCK (MIN); Address and control inputs are

switching; Data bus inputs are stable

IDD3P 3 3 3 3 mA 8

Active power-down standby current: Clock stopped; 1 bank ac-

tive, CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and

control inputs are switching; Data bus inputs are stable

IDD3PS 2 2 2 2 mA

Active nonpower-down standby: 1 bank active, CKE = HIGH; CS =

HIGH; tCK = tCK (MIN); Address and control inputs are switching;

Data bus inputs are stable

IDD3N 15 15 15 15 mA 6

Active nonpower-down standby: Clock stopped; 1 bank active,

CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and con-

trol inputs are switching; Data bus inputs are stable

IDD3NS 8 8 8 8 mA 6

Operating burst read: 1 bank active; BL = 4; tCK = tCK (MIN); Con-

tinuous READ bursts; IOUT = 0mA; Address inputs are switching

every 2 clock cycles; 50% data changing each burst

IDD4R 115 110 105 90 mA 6

Operating burst write: 1 bank active; BL = 4; tCK = tCK (MIN);

Continuous WRITE bursts; Address inputs are switching; 50% da-

ta changing each burst

IDD4W 115 110 105 90 mA 6

Auto refresh: Burst refresh; CKE = HIGH; Ad-

dress and control inputs are switching; Data bus

inputs are stable

tRFC = 110ns IDD5 105 105 100 100 mA 10

tRFC = tREFI IDD5A 3 3 3 3 mA 10, 11

Deep power-down current: Address and control balls are stable;

Data bus inputs are stable

IDD8 10 μA 7, 13

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – IDD Parameters

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 9: IDD Specifications and Conditions (x32)

Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V

Parameter/Condition Symbol

Max

Unit Notes-5 -54 -6 -75

Operating 1 bank active precharge current: tRC = tRC (MIN); tCK =

tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Ad-

dress inputs are switching every 2 clock cycles; Data bus inputs

are stable

IDD0 70 65 60 50 mA 6

Precharge power-down standby current: All banks idle; CKE is

LOW; CS is HIGH; tCK = tCK (MIN); Address and control inputs are

switching; Data bus inputs are stable

IDD2P 300 300 300 300 μA 7, 8

Precharge power-down standby current: Clock stopped; All banks

idle; CKE is LOW; CS is HIGH, CK = LOW, CK# = HIGH; Address and

control inputs are switching; Data bus inputs are stable

IDD2PS 300 300 300 300 μA 7

Precharge nonpower-down standby current: All banks idle CKE =

HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are

switching; Data bus inputs are stable

IDD2N 15 15 15 12 mA 9

Precharge nonpower-down standby current: Clock stopped; All

banks idle, CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Ad-

dress and control inputs are switching; Data bus inputs are stable

IDD2NS 8 8 8 8 mA 9

Active power-down standby current: 1 bank active, CKE = LOW;

CS = HIGH; tCK = tCK (MIN); Address and control inputs are

switching; Data bus inputs are stable

IDD3P 3 3 3 3 mA 8

Active power-down standby current: Clock stopped; 1 bank ac-

tive, CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and

control inputs are switching; Data bus inputs are stable

IDD3PS 2 2 2 2 mA

Active nonpower-down standby: 1 bank active; CKE = HIGH; CS =

HIGH; tCK = tCK (MIN); Address and control inputs are switching;

Data bus inputs are stable

IDD3N 15 15 15 15 mA 6

Active nonpower-down standby: Clock stopped; 1 bank active,

CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and con-

trol inputs are switching; Data bus inputs are stable

IDD3NS 8 8 8 8 mA 6

Operating burst read: 1 bank active; BL = 4; CL = 3; tCK = tCK

(MIN); Continuous READ bursts; IOUT = 0mA; Address inputs are

switching every 2 clock cycles; 50% data changing each burst

IDD4R 125 120 115 100 mA 6

Operating burst write: One bank active; BL = 4; tCK = tCK (MIN);

Continuous WRITE bursts; Address inputs are switching; 50% da-

ta changing each burst

IDD4W 125 120 115 100 mA 6

Auto refresh: Burst refresh; CKE = HIGH; Ad-

dress and control inputs are switching; Data bus

inputs are stable

tRFC = 110ns IDD5 105 105 100 100 mA 10

tRFC = tREFI IDD5A 3 3 3 3 mA 10, 11

Deep power-down current: Address and control pins are stable;

Data bus inputs are stable

IDD8 10 μA 7, 13

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – IDD Parameters

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 10: IDD6 Specifications and Conditions

Notes 1–5, 7, and 12 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V

Parameter/Condition Symbol Low Power Standard Units

Self refresh

CKE = LOW; tCK = tCK (MIN); Address and control

inputs are stable; Data bus inputs are stable

Full array, 85˚C IDD6 500 700 μA

Full array, 45˚C 250 390 μA

1/2 array, 85˚C 400 520 μA

1/2 array, 45˚C 220 310 μA

1/4 array, 85˚C 350 430 μA

1/4 array, 45˚C 205 275 μA

1/8 array, 85˚C 350 430 μA

1/8 array, 45˚C 205 275 μA

1/16 array, 85˚C 325 375 μA

1/16 array, 45˚C 200 250 μA

Notes: 1. All voltages referenced to VSS.

2. Tests for IDD characteristics may be conducted at nominal supply voltage levels, but the

related specifications and device operation are guaranteed for the full voltage range

specified.

3. Timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment,

but input timing is still referenced to VDDQ/2 (or to the crossing point for CK/CK#). The

output timing reference voltage level is VDDQ/2.

4. IDD is dependent on output loading and cycle rates. Specified values are obtained with

minimum cycle time with the outputs open.

5. IDD specifications are tested after the device is properly initialized and values are aver-

aged at the defined cycle rate.

6. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the

minimum absolute value for the respective parameter. tRAS (MAX) for IDD measure-

ments is the largest multiple of tCK that meets the maximum absolute value for tRAS.

7. Measurement is taken 500ms after entering into this operating mode to allow settling

time for the tester.

8. VDD must not vary more than 4% if CKE is not active while any bank is active.

9. IDD2N specifies DQ, DQS, and DM to be driven to a valid high or low logic level.

10. CKE must be active (HIGH) during the entire time a REFRESH command is executed.

From the time the AUTO REFRESH command is registered, CKE must be active at each

rising clock edge until tRFC later.

11. This limit is a nominal value and does not result in a fail. CKE is HIGH during REFRESH

command period (tRFC [MIN]) else CKE is LOW (for example, during standby).

12. Values for IDD6 85˚C are guaranteed for the entire temperature range. All other IDD6 val-

ues are estimated.

13. Typical values at 25˚C, not a maximum value.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – IDD Parameters

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 9: Typical Self Refresh Current vs. Temperature

Current (µA)

Temperature (°C)

700

650

600

550

500

450

400

350

300

250

200

150

100

–40 –35 –30 –25 –20 –15 –10 –5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105

Full array

1/2 array

1/4 array

1/8 array

1/16 array

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – IDD Parameters

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Electrical Specifications – AC Operating Conditions

Table 11: Electrical Characteristics and Recommended AC Operating Conditions

Notes 1–9 apply to all parameters in this table; VDD/VDDQ = 1.70–1.95V

Parameter Symbol

-5 -54 -6 -75

Unit NotesMin Max Min Max Min Max Min Max

Access window

of DQ from

CK/CK#

CL = 3 tAC 2.0 5.0 2.0 5.0 2.0 5.0 2.0 6.0 ns

CL = 2 2.0 6.5 2.0 6.5 2.0 6.5 2.0 6.5

Clock cycle time CL = 3 tCK 5 – 5.4 – 6 – 7.5 – ns 10

CL = 2 12 – 12 – 12 – 12 –

CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

CKE minimum pulse

width (high and low)

tCKE 1 – 1 – 1 – 1 – tCK 11

Auto precharge write re-

covery + precharge time

tDAL – – – – – – – – 12

DQ and DM in-

put hold time

relative to DQS

fast

slew

rate

tDHf0.48 – 0.54 – 0.6 – 0.8 – ns 13, 14,

DQ and DM in-

put hold time

relative to DQS

slow

slew

rate

tDHs0.58 – 0.64 – 0.7 – 0.9 –

DQ and DM in-

put setup time

relative to DQ

fast

slew

rate

tDSf0.48 – 0.54 – 0.6 – 0.8 – ns 13, 14,

DQ and DM in-

put setup time

relative to DQS

slow

slew

rate

tDSs0.58 – 0.64 – 0.7 – 0.9 –

DQ and DM input pulse

width (for each input)

tDIPW 1.4 – 1.4 – 1.4 – 1.4 – ns 16

Access window

of DQS from

CK/CK#

CL = 3 tDQSCK 2.0 5.0 2.0 5.0 2.0 5.0 2.0 6.0 ns

CL = 2 2.0 6.5 2.0 6.5 2.0 6.5 2.0 6.5

DQS input high pulse

width

tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

DQS input low pulse

width

tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

DQS–DQ skew, DQS to

last DQ valid, per group,

per access

tDQSQ – 0.4 – 0.45 – 0.5 – 0.6 ns 13, 17

WRITE command to first

DQS latching transition

tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK

DQS falling edge from

CK rising – hold time

tDSH 0.2 – 0.2 – 0.2 – 0.2 – tCK

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – AC Operating Conditions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 11: Electrical Characteristics and Recommended AC Operating Conditions (Continued)

Notes 1–9 apply to all parameters in this table; VDD/VDDQ = 1.70–1.95V

Parameter Symbol

-5 -54 -6 -75

Unit NotesMin Max Min Max Min Max Min Max

DQS falling edge to CK

rising – setup time

tDSS 0.2 – 0.2 – 0.2 – 0.2 – tCK

Data valid output

window

DVW tQH - tDQSQ tQH - tDQSQ tQH - tDQSQ tQH - tDQSQ ns 17

Half-clock period tHP tCH,

tCL

–tCH,

tCL

–tCH,

tCL

–tCH,

tCL

– ns 18

Data-out High-Z

window from

CK/CK#

CL = 3 tHZ – 5.0 – 5.0 – 5.0 – 6.0 ns 19, 20

CL = 2 – 6.5 – 6.5 – 6.5 – 6.5

Data-out Low-Z window

from CK/CK#

tLZ 1.0 – 1.0 – 1.0 – 1.0 – ns 19

Address and

control input

hold time

fast

slew

rate

tIHF0.9 – 1.0 – 1.1 – 1.3 – ns 15, 21

Address and

control input

hold time

slow

slew

rate

tIHS1.1 – 1.2 – 1.3 – 1.5 –

Address and

control input

setup time

fast

slew

rate

tISF0.9 – 1.0 – 1.1 – 1.3 – ns 15, 21

Address and

control input

setup time

slow

slew

rate

tISS1.1 – 1.2 – 1.3 – 1.5 –

Address and control

input pulse width

tIPW 2.3 – 2.4 – 2.4 – 2.6 – ns 16

LOAD MODE REGISTER

command cycle time

tMRD 2 – 2 – 2 – 2 – tCK

DQ–DQS hold, DQS to

first DQ to go nonvalid,

per access

tQH tHP -

tQHS

–tHP -

tQHS

–tHP -

tQHS

–tHP -

tQHS

– ns 13, 17

Data hold skew factor tQHS – 0.5 – 0.5 – 0.65 – 0.75 ns

ACTIVE-to-PRECHARGE

command

tRAS 40 70,000 42 70,000 42 70,000 45 70,000 ns 22

ACTIVE to ACTIVE/

ACTIVE to AUTO RE-

FRESH command period

tRC 55 – 59.4 – 60 – 67.5 – ns 23

Active-to-read or write

delay

tRCD 15 – 16.2 – 18 – 22.5 – ns

Refresh period tREF – 64 – 64 – 64 – 64 ms

Average periodic refresh

interval

tREFI – 7.8 – 7.8 – 7.8 – 7.8 μs 24

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – AC Operating Conditions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 11: Electrical Characteristics and Recommended AC Operating Conditions (Continued)

Notes 1–9 apply to all parameters in this table; VDD/VDDQ = 1.70–1.95V

Parameter Symbol

-5 -54 -6 -75

Unit NotesMin Max Min Max Min Max Min Max

AUTO REFRESH

command period

tRFC 72 – 72 – 72 – 72 – ns

PRECHARGE command

period

tRP 15 – 16.2 – 18 – 22.5 – ns

DQS read

preamble

CL = 3 tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK

DQS read

preamble

CL = 2 tRPRE 0.5 1.1 0.5 1.1 0.5 1.1 0.5 1.1 tCK

DQS read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

Active bank a to active

bank b command

tRRD 10 – 10.8 – 12 – 15 – ns

Read of SRR to next valid

command

tSRC CL + 1 – CL + 1 – CL + 1 – CL + 1 – tCK

SRR to read tSRR 2 – 2 – 2 – 2 – tCK

DQS write preamble tWPRE 0.25 – 0.25 – 0.25 – 0.25 – tCK

DQS write preamble

setup time

tWPRES 0 – 0 – 0 – 0 – ns 25, 26

DQS write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK 27

Write recovery time tWR 15 – 15 – 15 – 15 – ns 28

Internal WRITE-to-READ

command delay

tWTR 2 – 2 – 2 – 1 – tCK

Exit power-down mode

to first valid command

tXP 2 – 2 – 1 – 1 – tCK

Exit self refresh to first

valid command

tXSR 120 – 120 – 120 – 120 – ns 29

Notes: 1. All voltages referenced to VSS.

2. All parameters assume proper device initialization.

3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nomi-

nal supply voltage levels, but the related specifications and device operation are guar-

anteed for the full voltage ranges specified.

4. The circuit shown below represents the timing reference load used in defining the rele-

vant timing parameters of the device. It is not intended to be either a precise represen-

tation of the typical system environment or a depiction of the actual load presented by

a production tester. System designers will use IBIS or other simulation tools to correlate

the timing reference load to system environment. Specifications are correlated to pro-

duction test conditions (generally a coaxial transmission line terminated at the tester

electronics). For the half-strength driver with a nominal 10pF load, parameters tAC and

tQH are expected to be in the same range. However, these parameters are not subject to

production test but are estimated by design/characterization. Use of IBIS or other simu-

lation tools for system design validation is suggested.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – AC Operating Conditions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice.

I/O

20pF

I/O

10pF

Full drive strength Half drive strength

50 50

5. The CK/CK# input reference voltage level (for timing referenced to CK/CK#) is the point

at which CK and CK# cross; the input reference voltage level for signals other than

CK/CK# is VDDQ/2.

6. A CK and CK# input slew rate ≥1 V/ns (2 V/ns if measured differentially) is assumed for

all parameters.

7. All AC timings assume an input slew rate of 1 V/ns.

8. CAS latency definition: with CL = 2, the first data element is valid at (tCK + tAC) after the

clock at which the READ command was registered; for CL = 3, the first data element is

valid at (2 × tCK + tAC) after the first clock at which the READ command was registered.

9. Timing tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input

timing is still referenced to VDDQ/2 or to the crossing point for CK/CK#. The output tim-

ing reference voltage level is VDDQ/2.

10. Clock frequency is only permitted to change during clock stop, power-down, or self re-

fresh mode.

11. In cases where the device is in self refresh mode for tCKE, tCKE starts at the rising edge

of the clock and ends when CKE transitions HIGH.

12. tDAL = (tWR/tCK) + (tRP/tCK): for each term, if not already an integer, round up to the

next highest integer.

13. Referenced to each output group: for x16, LDQS with DQ[7:0]; and UDQS with DQ[15:8].

For x32, DQS0 with DQ[7:0]; DQS1 with DQ[15:8]; DQS2 with DQ[23:16]; and DQS3 with

DQ[31:24].

14. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the

DQ/DM/DQS slew rate is less than 1.0 V/ns, timing must be derated: 50ps must be added

to tDS and tDH for each 100 mV/ns reduction in slew rate. If the slew rate exceeds 4 V/ns,

functionality is uncertain.

15. The transition time for input signals (CAS#, CKE, CS#, DM, DQ, DQS, RAS#, WE#, and ad-

dresses) are measured between VIL(DC) to VIH(AC) for rising input signals and VIH(DC) to

VIL(AC) for falling input signals.

16. These parameters guarantee device timing but are not tested on each device.

17. The valid data window is derived by achieving other specifications: tHP (tCK/2), tDQSQ,

and tQH (tHP - tQHS). The data valid window derates directly proportional with the clock

duty cycle and a practical data valid window can be derived. The clock is allowed a maxi-

mum duty cycle variation of 45/55. Functionality is uncertain when operating beyond a

45/55 ratio.

18. tHP (MIN) is the lesser of tCL (MIN) and tCH (MIN) actually applied to the device CK and

CK# inputs, collectively.

19. tHZ and tLZ transitions occur in the same access time windows as valid data transitions.

These parameters are not referenced to a specific voltage level, but specify when the

device output is no longer driving (tHZ) or begins driving (tLZ).

20. tHZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition.

21. Fast command/address input slew rate ≥1 V/ns. Slow command/address input slew rate

≥0.5 V/ns. If the slew rate is less than 0.5 V/ns, timing must be derated: tIS has an addi-

tional 50ps per each 100 mV/ns reduction in slew rate from the 0.5 V/ns. tIH has 0ps add-

ed, therefore, it remains constant. If the slew rate exceeds 4.5 V/ns, functionality is un-

certain.

22. READs and WRITEs with auto precharge must not be issued until tRAS (MIN) can be satis-

fied prior to the internal PRECHARGE command being issued.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – AC Operating Conditions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice.

23. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-

cesses to a particular row address may result in reduction of the product lifetime.

24. The refresh period equals 64ms. This equates to an average refresh rate of 7.8125μs.

25. This is not a device limit. The device will operate with a negative value, but system per-

formance could be degraded due to bus turnaround.

26. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command.

The case shown (DQS going from High-Z to logic low) applies when no WRITEs were

previously in progress on the bus. If a previous WRITE was in progress, DQS could be

HIGH during this time, depending on tDQSS.

27. The maximum limit for this parameter is not a device limit. The device will operate with

a greater value for this parameter, but system performance (bus turnaround) will de-

grade accordingly.

28. At least 1 clock cycle is required during tWR time when in auto precharge mode.

29. Clock must be toggled a minimum of two times during the tXSR period.

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications – AC Operating Conditions

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Output Drive Characteristics

Table 12: Target Output Drive Characteristics (Full Strength)

Notes 1–2 apply to all values; characteristics are specified under best and worst process variations/conditions

Voltage (V)

Pull-Down Current (mA) Pull-Up Current (mA)

Min Max Min Max

0.00 0.00 0.00 0.00 0.00

0.10 2.80 18.53 –2.80 –18.53

0.20 5.60 26.80 –5.60 –26.80

0.30 8.40 32.80 –8.40 –32.80

0.40 11.20 37.05 –11.20 –37.05

0.50 14.00 40.00 –14.00 –40.00

0.60 16.80 42.50 –16.80 –42.50

0.70 19.60 44.57 –19.60 –44.57

0.80 22.40 46.50 –22.40 –46.50

0.85 23.80 47.48 –23.80 –47.48

0.90 23.80 48.50 –23.80 –48.50

0.95 23.80 49.40 –23.80 –49.40

1.00 23.80 50.05 –23.80 –50.05

1.10 23.80 51.35 –23.80 –51.35

1.20 23.80 52.65 –23.80 –52.65

1.30 23.80 53.95 –23.80 –53.95

1.40 23.80 55.25 –23.80 –55.25

1.50 23.80 56.55 –23.80 –56.55

1.60 23.80 57.85 –23.80 –57.85

1.70 23.80 59.15 –23.80 –59.15

1.80 – 60.45 – –60.45

1.90 – 61.75 – –61.75

Notes: 1. Based on nominal impedance of 25Ω (full strength) at VDDQ/2.

2. The full variation in driver current from minimum to maximum, due to process, voltage,

and temperature, will lie within the outer bounding lines of the I-V curves.

512Mb: x16, x32 Mobile LPDDR SDRAM

Output Drive Characteristics

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 13: Target Output Drive Characteristics (Three-Quarter Strength)

Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions

Voltage (V)

Pull-Down Current (mA) Pull-Up Current (mA)

Min Max Min Max

0.00 0.00 0.00 0.00 0.00

0.10 1.96 12.97 –1.96 –12.97

0.20 3.92 18.76 –3.92 –18.76

0.30 5.88 22.96 –5.88 –22.96

0.40 7.84 25.94 –7.84 –25.94

0.50 9.80 28.00 –9.80 –28.00

0.60 11.76 29.75 –11.76 –29.75

0.70 13.72 31.20 –13.72 –31.20

0.80 15.68 32.55 –15.68 –32.55

0.85 16.66 33.24 –16.66 –33.24

0.90 16.66 33.95 –16.66 –33.95

0.95 16.66 34.58 –16.66 –34.58

1.00 16.66 35.04 –16.66 –35.04

1.10 16.66 35.95 –16.66 –35.95

1.20 16.66 36.86 –16.66 –36.86

1.30 16.66 37.77 –16.66 –37.77

1.40 16.66 38.68 –16.66 –38.68

1.50 16.66 39.59 –16.66 –39.59

1.60 16.66 40.50 –16.66 –40.50

1.70 16.66 41.41 –16.66 –41.41

1.80 – 42.32 – –42.32

1.90 – 43.23 – –43.23

Notes: 1. Based on nominal impedance of 37Ω (three-quarter drive strength) at VDDQ/2.

2. The full variation in driver current from minimum to maximum, due to process, voltage,

and temperature, will lie within the outer bounding lines of the I-V curves.

3. Contact factory for availability of three-quarter drive strength.

512Mb: x16, x32 Mobile LPDDR SDRAM

Output Drive Characteristics

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 14: 1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength)

Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions

Voltage (V)

Pull-Down Current (mA) Pull-Up Current (mA)

Min Max Min Max

0.00 0.00 0.00 0.00 0.00

0.10 1.96 9.38 –1.96 –9.38

0.20 3.92 12.97 –3.92 –12.97

0.30 5.88 15.87 –5.88 –15.87

0.40 7.84 18.33 –7.84 –18.33

0.50 9.80 20.34 –9.80 –20.34

0.60 11.10 22.63 –11.10 –22.63

0.70 11.10 25.03 –11.10 –25.03

0.80 11.10 27.14 –11.10 –27.14

0.90 11.10 29.91 –11.10 –29.91

1.00 11.10 32.18 –11.10 –32.18

1.10 11.10 34.95 –11.10 –34.95

1.20 11.10 37.78 –11.10 –37.78

1.30 – 40.58 – –40.58

Notes: 1. Based on nominal impedance of 37Ω (three-quarter drive strength) at VDDQ/2.

2. The full variation in driver current from minimum to maximum, due to process, voltage,

and temperature, will lie within the outer bounding lines of the I-V curves.

3. Contact factory for availability of three-quarter drive strength.

512Mb: x16, x32 Mobile LPDDR SDRAM

Output Drive Characteristics

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 15: Target Output Drive Characteristics (One-Half Strength)

Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions

Voltage (V)

Pull-Down Current (mA) Pull-Up Current (mA)

Min Max Min Max

0.00 0.00 0.00 0.00 0.00

0.10 1.27 8.42 –1.27 –8.42

0.20 2.55 12.30 –2.55 –12.30

0.30 3.82 14.95 –3.82 –14.95

0.40 5.09 16.84 –5.09 –16.84

0.50 6.36 18.20 –6.36 –18.20

0.60 7.64 19.30 –7.64 –19.30

0.70 8.91 20.30 –8.91 –20.30

0.80 10.16 21.20 –10.16 –21.20

0.85 10.80 21.60 –10.80 –21.60

0.90 10.80 22.00 –10.80 –22.00

0.95 10.80 22.45 –10.80 –22.45

1.00 10.80 22.73 –10.80 –22.73

1.10 10.80 23.21 –10.80 –23.21

1.20 10.80 23.67 –10.80 –23.67

1.30 10.80 24.14 –10.80 –24.14

1.40 10.80 24.61 –10.80 –24.61

1.50 10.80 25.08 –10.80 –25.08

1.60 10.80 25.54 –10.80 –25.54

1.70 10.80 26.01 –10.80 –26.01

1.80 – 26.48 – –26.48

1.90 – 26.95 – –26.95

Notes: 1. Based on nominal impedance of 55Ω (one-half drive strength) at VDDQ/2.

2. The full variation in driver current from minimum to maximum, due to process, voltage,

and temperature, will lie within the outer bounding lines of the I-V curves.

3. The I-V curve for one-quarter drive strength is approximately 50% of one-half drive

strength.

512Mb: x16, x32 Mobile LPDDR SDRAM

Output Drive Characteristics

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Functional Description

The Mobile LPDDR SDRAM uses a double data rate architecture to achieve high-speed

operation. The double data rate architecture is essentially a 2n-prefetch architecture,

with an interface designed to transfer two data words per clock cycle at the I/O. Single

read or write access for the device consists of a single 2n-bit-wide, one-clock-cycle data

transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-

cycle data transfers at the I/O.

A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in

data capture at the receiver. DQS is a strobe transmitted by the device during READs

and by the memory controller during WRITEs. DQS is edge-aligned with data for READs

and center-aligned with data for WRITEs. The x16 device has two data strobes, one for

the lower byte and one for the upper byte; the x32 device has four data strobes, one per

byte.

The LPDDR device operates from a differential clock (CK and CK#); the crossing of CK

going HIGH and CK# going LOW will be referred to as the positive edge of CK. Com-

mands (address and control signals) are registered at every positive edge of CK. Input

data is registered on both edges of DQS, and output data is referenced to both edges of

DQS, as well as to both edges of CK.

Read and write accesses to the device are burst-oriented; accesses start at a selected lo-

cation and continue for a programmed number of locations in a programmed se-

quence. Accesses begin with the registration of an ACTIVE command, followed by a

READ or WRITE command. The address bits registered coincident with the ACTIVE

command are used to select the bank and row to be accessed. The address bits regis-

tered coincident with the READ or WRITE command are used to select the starting col-

umn location for the burst access.

The device provides for programmable READ or WRITE burst lengths of 2, 4, 8, or 16. An

auto precharge function can be enabled to provide a self-timed row precharge that is

initiated at the end of the burst access.

As with standard DDR SDRAM, the pipelined, multibank architecture of LPDDR sup-

ports concurrent operation, thereby providing high effective bandwidth by hiding row

precharge and activation time.

An auto refresh mode is provided, along with a power-saving power-down mode. Deep

power-down mode is offered to achieve maximum power reduction by eliminating the

power of the memory array. Data will not be retained after the device enters deep pow-

er-down mode.

Two self refresh features, temperature-compensated self refresh (TCSR) and partial-ar-

ray self refresh (PASR), offer additional power savings. TCSR is controlled by the auto-

matic on-chip temperature sensor. PASR can be customized using the extended mode

ings.

The DLL that is typically used on standard DDR devices is not necessary on LPDDR de-

vices. It has been omitted to save power.

512Mb: x16, x32 Mobile LPDDR SDRAM

Functional Description

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 35 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Commands

A quick reference for available commands is provided in Table 16 and Table 17

(page 37), followed by a written description of each command. Three additional truth

tables (Table 18 (page 43), Table 19 (page 45), and Table 20 (page 47)) provide CKE

commands and current/next state information.

Table 16: Truth Table – Commands

CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN; all states and sequences not shown

are reserved and/or illegal

Name (Function) CS# RAS# CAS# WE# Address Notes

DESELECT (NOP) H X X X X 1

NO OPERATION (NOP) L H H H X 1

ACTIVE (select bank and activate row) L L H H Bank/row 2

READ (select bank and column, and start READ burst) L H L H Bank/column 3

WRITE (select bank and column, and start WRITE burst) L H L L Bank/column 3

BURST TERMINATE or DEEP POWER-DOWN (enter deep

power-down mode)

L H H L X 4, 5

PRECHARGE (deactivate row in bank or banks) L L H L Code 6

AUTO REFRESH (refresh all or single bank) or SELF RE-

FRESH (enter self refresh mode)

L L L H X 7, 8

LOAD MODE REGISTER L L L L Op-code 9

Notes: 1. DESELECT and NOP are functionally interchangeable.

2. BA0–BA1 provide bank address and A[0:I] provide row address (where I = the most sig-

nificant address bit for each configuration).

3. BA0–BA1 provide bank address; A[0:I] provide column address (where I = the most sig-

nificant address bit for each configuration); A10 HIGH enables the auto precharge fea-

ture (nonpersistent); A10 LOW disables the auto precharge feature.

4. Applies only to READ bursts with auto precharge disabled; this command is undefined

and should not be used for READ bursts with auto precharge enabled and for WRITE

bursts.

5. This command is a BURST TERMINATE if CKE is HIGH and DEEP POWER-DOWN if CKE is

LOW.

6. A10 LOW: BA0–BA1 determine which bank is precharged.

A10 HIGH: all banks are precharged and BA0–BA1 are “Don’t Care.”

7. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.

8. Internal refresh counter controls row addressing; in self refresh mode all inputs and I/Os

are “Don’t Care” except for CKE.

9. BA0–BA1 select the standard mode register, extended mode register, or status register.

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 36 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 17: DM Operation Truth Table

Name (Function) DM DQ Notes

Write enable L Valid 1, 2

Write inhibit H X 1, 2

Notes: 1. Used to mask write data; provided coincident with the corresponding data.

2. All states and sequences not shown are reserved and/or illegal.

DESELECT

The DESELECT function (CS# HIGH) prevents new commands from being executed by

the device. Operations already in progress are not affected.

NO OPERATION

The NO OPERATION (NOP) command is used to instruct the selected device to perform

a NOP. This prevents unwanted commands from being registered during idle or wait

states. Operations already in progress are not affected.

LOAD MODE REGISTER

The mode registers are loaded via inputs A[0:n]. See mode register descriptions in

Standard Mode Register and Extended Mode Register. The LOAD MODE REGISTER

command can only be issued when all banks are idle, and a subsequent executable

command cannot be issued until tMRD is met.

ACTIVE

The ACTIVE command is used to activate a row in a particular bank for a subsequent

access. The values on the BA0 and BA1 inputs select the bank, and the address provided

on inputs A[0:n] selects the row. This row remains active for accesses until a PRE-

CHARGE command is issued to that bank. A PRECHARGE command must be issued be-

fore opening a different row in the same bank.

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 10: ACTIVE Command

CS#

WE#

CAS#

RAS#

CKE

Address Row

HIGH

BA0, BA1 Bank

CK#

Don’t Care

READ

The READ command is used to initiate a burst read access to an active row. The values

on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where

I = the most significant column address bit for each configuration) selects the starting

column location. The value on input A10 determines whether auto precharge is used. If

auto precharge is selected, the row being accessed will be precharged at the end of the

READ burst; if auto precharge is not selected, the row will remain open for subsequent

accesses.

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 11: READ Command

CS#

WE#

CAS#

RAS#

CKE

Column

Address

A10

BA0, BA1

HIGH

EN AP

DIS AP

Bank

CK#

Don’t Care

Note: 1. EN AP = enable auto precharge; DIS AP = disable auto precharge.

WRITE

The WRITE command is used to initiate a burst write access to an active row. The values

on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where

I = the most significant column address bit for each configuration) selects the starting

column location. The value on input A10 determines whether auto precharge is used. If

auto precharge is selected, the row being accessed will be precharged at the end of the

WRITE burst; if auto precharge is not selected, the row will remain open for subsequent

accesses. Input data appearing on the DQ is written to the memory array, subject to the

DM input logic level appearing coincident with the data. If a given DM signal is regis-

tered LOW, the corresponding data will be written to memory; if the DM signal is regis-

tered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be

executed to that byte/column location.

If a WRITE or a READ is in progress, the entire data burst must be complete prior to

stopping the clock (see Clock Change Frequency (page 96)). A burst completion for

WRITEs is defined when the write postamble and tWR or tWTR are satisfied.

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 12: WRITE Command

CS#

WE#

CAS#

RAS#

CKE

Column

A10

BA0, BA1

HIGH

EN AP

DIS AP

Bank

CK#

Don’t Care

Address

Note: 1. EN AP = enable auto precharge; DIS AP = disable auto precharge.

PRECHARGE

The PRECHARGE command is used to deactivate the open row in a particular bank or

the open row in all banks. The bank(s) will be available for a subsequent row access a

specified time (tRP) after the PRECHARGE command is issued. Input A10 determines

whether one or all banks will be precharged, and in the case where only one bank is pre-

charged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as

“Don’t Care.” After a bank has been precharged, it is in the idle state and must be acti-

vated prior to any READ or WRITE commands being issued to that bank.

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 13: PRECHARGE Command

CS#

WE#

CAS#

RAS#

CKE

A10

BA0, BA1

HIGH

All banks

Single bank

Bank

CK#

Don’t Care

Address

Note: 1. If A10 is HIGH, bank address becomes “Don’t Care.”

BURST TERMINATE

The BURST TERMINATE command is used to truncate READ bursts with auto pre-

charge disabled. The most recently registered READ command prior to the BURST TER-

MINATE command will be truncated, as described in READ Operation. The open page

from which the READ was terminated remains open.

AUTO REFRESH

AUTO REFRESH is used during normal operation of the device and is analogous to

CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH com-

mand is nonpersistent and must be issued each time a refresh is required.

Addressing is generated by the internal refresh controller. This makes the address bits a

“Don’t Care” during an AUTO REFRESH command.

For improved efficiency in scheduling and switching between tasks, some flexibility in

the absolute refresh interval is provided. The auto refresh period begins when the AUTO

REFRESH command is registered and ends tRFC later.

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice.

SELF REFRESH

The SELF REFRESH command is used to place the device in self refresh mode; self re-

fresh mode is used to retain data in the memory device while the rest of the system is

powered down. When in self refresh mode, the device retains data without external

clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command,

except that CKE is disabled (LOW). After the SELF REFRESH command is registered, all

inputs to the device become “Don’t Care” with the exception of CKE, which must re-

main LOW.

Micron recommends that, prior to self refresh entry and immediately upon self refresh

exit, the user perform a burst auto refresh cycle for the number of refresh rows. Alterna-

tively, if a distributed refresh pattern is used, this pattern should be immediately re-

sumed upon self refresh exit.

DEEP POWER-DOWN

The DEEP POWER-DOWN (DPD) command is used to enter DPD mode, which achieves

maximum power reduction by eliminating the power to the memory array. Data will not

be retained when the device enters DPD mode. The DPD command is the same as a

BURST TERMINATE command with CKE LOW.

Figure 14: DEEP POWER-DOWN Command

CS#

WE#

CAS#

RAS#

CKE

Address

BA0, BA1

CK#

Don’t Care

512Mb: x16, x32 Mobile LPDDR SDRAM

Commands

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Truth Tables

Table 18: Truth Table – Current State Bank n – Command to Bank n

Notes 1–6 apply to all parameters in this table

Current State CS# RAS# CAS# WE# Command/Action Notes

Any H X X X DESELECT (NOP/continue previous operation)

L H H H NO OPERATION (NOP/continue previous operation)

Idle L L H H ACTIVE (select and activate row)

L L L H AUTO REFRESH 7

L L L L LOAD MODE REGISTER 7

Row active L H L H READ (select column and start READ burst) 10

L H L L WRITE (select column and start WRITE burst) 10

L L H L PRECHARGE (deactivate row in bank or banks) 8

Read (auto pre-

charge disabled)

L H L H READ (select column and start new READ burst) 10

L H L L WRITE (select column and start WRITE burst) 10, 12

L L H L PRECHARGE (truncate READ burst, start PRECHARGE) 8

L H H L BURST TERMINATE 9

Write (auto pre-

charge disabled)

L H L H READ (select column and start READ burst) 10, 11

L H L L WRITE (select column and start new WRITE burst) 10

L L H L PRECHARGE (truncate WRITE burst, start PRECHARGE) 8, 11

Notes: 1. This table applies when CKEn - 1 was HIGH, CKEn is HIGH and after tXSR has been met (if

the previous state was self refresh), after tXP has been met (if the previous state was

power-down), or after a full initialization (if the previous state was deep power-down).

2. This table is bank-specific, except where noted (for example, the current state is for a

specific bank and the commands shown are supported for that bank when in that state).

Exceptions are covered in the notes below.

3. Current state definitions:

Idle: The bank has been precharged, and tRP has been met.

Row active: A row in the bank has been activated, and tRCD has been met. No data

bursts/accesses and no register accesses are in progress.

Read: A READ burst has been initiated with auto precharge disabled and has not yet ter-

minated or been terminated.

Write: A WRITE burst has been initiated with auto precharge disabled and has not yet

terminated or been terminated.

4. The states listed below must not be interrupted by a command issued to the same bank.

COMMAND INHIBIT or NOP commands, or supported commands to the other bank,

must be issued on any clock edge occurring during these states. Supported commands to

any other bank are determined by that bank’s current state.

Precharging: Starts with registration of a PRECHARGE command and ends when tRP is

met. After tRP is met, the bank will be in the idle state.

Row activating: Starts with registration of an ACTIVE command and ends when tRCD is

met. After tRCD is met, the bank will be in the row active state.

512Mb: x16, x32 Mobile LPDDR SDRAM

Truth Tables

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Read with auto-precharge enabled: Starts with registration of a READ command with

auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will

be in the idle state.

Write with auto-precharge enabled: Starts with registration of a WRITE command with

auto precharge enabled and ends when tRP has been met. After tRP is met, the bank

will be in the idle state.

5. The states listed below must not be interrupted by any executable command; DESELECT

or NOP commands must be applied on each positive clock edge during these states.

Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC

is met. After tRFC is met, the device will be in the all banks idle state.

Accessing mode register: Starts with registration of a LOAD MODE REGISTER command

and ends when tMRD has been met. After tMRD is met, the device will be in the all

banks idle state.

Precharging all: Starts with registration of a PRECHARGE ALL command and ends when

tRP is met. After tRP is met, all banks will be in the idle state.

6. All states and sequences not shown are illegal or reserved.

7. Not bank-specific; requires that all banks are idle, and bursts are not in progress.

8. May or may not be bank-specific; if multiple banks need to be precharged, each must be

in a valid state for precharging.

9. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of

bank.

10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with

auto precharge enabled and READs or WRITEs with auto precharge disabled.

11. Requires appropriate DM masking.

12. A WRITE command can be applied after the completion of the READ burst; otherwise, a

BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-

mand.

512Mb: x16, x32 Mobile LPDDR SDRAM

Truth Tables

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 19: Truth Table – Current State Bank n – Command to Bank m

Notes 1–6 apply to all parameters in this table

Current State CS# RAS# CAS# WE# Command/Action Notes

Any H X X X DESELECT (NOP/continue previous operation)

L H H H NO OPERATION (NOP/continue previous operation)

Idle X X X X Any command supported to bank m

Row activating,

active, or pre-

charging

L L H H ACTIVE (select and activate row)

L H L H READ (select column and start READ burst)

L H L L WRITE (select column and start WRITE burst)

L L H L PRECHARGE

Read (auto pre-

charge disabled)

L L H H ACTIVE (select and activate row)

L H L H READ (select column and start new READ burst)

L H L L WRITE (select column and start WRITE burst) 7

L L H L PRECHARGE

Write (auto pre-

charge disabled)

L L H H ACTIVE (select and activate row)

L H L H READ (select column and start READ burst)

L H L L WRITE (select column and start new WRITE burst)

L L H L PRECHARGE

Read (with auto

precharge)

L L H H ACTIVE (select and activate row)

L H L H READ (select column and start new READ burst)

L H L L WRITE (select column and start WRITE burst) 7

L L H L PRECHARGE

Write (with auto

precharge)

L L H H ACTIVE (select and activate row)

L H L H READ (select column and start READ burst)

L H L L WRITE (select column and start new WRITE burst)

L L H L PRECHARGE

Notes: 1. This table applies when CKEn - 1 was HIGH, CKEn is HIGH and after tXSR has been met (if

the previous state was self refresh), after tXP has been met (if the previous state was

power-down) or after a full initialization (if the previous state was deep power-down).

2. This table describes alternate bank operation, except where noted (for example, the cur-

rent state is for bank n and the commands shown are those supported for issue to bank

m, assuming that bank m is in such a state that the given command is supported). Excep-

tions are covered in the notes below.

3. Current state definitions:

Idle: The bank has been precharged, and tRP has been met.

Row active: A row in the bank has been activated, and tRCD has been met. No data

bursts/accesses and no register accesses are in progress.

Read: A READ burst has been initiated and has not yet terminated or been terminated.

Write: A WRITE burst has been initiated and has not yet terminated or been terminated.

3a. Both the read with auto precharge enabled state or the write with auto precharge

enabled state can be broken into two parts: the access period and the precharge period.

For read with auto precharge, the precharge period is defined as if the same burst was

512Mb: x16, x32 Mobile LPDDR SDRAM

Truth Tables

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice.

executed with auto precharge disabled and then followed with the earliest possible

PRECHARGE command that still accesses all of the data in the burst. For write with auto

precharge, the precharge period begins when tWR ends, with tWR measured as if auto

precharge was disabled. The access period starts with registration of the command and

ends when the precharge period (or tRP) begins. This device supports concurrent auto

precharge such that when a read with auto precharge is enabled or a write with auto

precharge is enabled, any command to other banks is supported, as long as that com-

mand does not interrupt the read or write data transfer already in process. In either

case, all other related limitations apply (i.e., contention between read data and write

data must be avoided).

3b. The minimum delay from a READ or WRITE command (with auto precharge enabled)

to a command to a different bank is summarized below.

From

Command To Command

Minimum Delay

(with Concurrent Auto

Precharge)

WRITE with

Auto Precharge

READ or READ with auto precharge

WRITE or WRITE with auto pre-

charge

PRECHARGE

ACTIVE

[1 + (BL/2)] tCK + tWTR

(BL/2) tCK

1 tCK

READ with

Auto Precharge

READ or READ with auto precharge

WRITE or WRITE with auto pre-

charge

PRECHARGE

ACTIVE

(BL/2) × tCK

[CL + (BL/2)] tCK

1 tCK

4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all

banks are idle.

5. All states and sequences not shown are illegal or reserved.

6. Requires appropriate DM masking.

7. A WRITE command can be applied after the completion of the READ burst; otherwise, a

BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-

mand.

512Mb: x16, x32 Mobile LPDDR SDRAM

Truth Tables

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 20: Truth Table – CKE

Notes 1–4 apply to all parameters in this table

Current State CKEn - 1 CKEnCOMMANDnACTIONnNotes

Active power-down L L X Maintain active power-down

Deep power-down L L X Maintain deep power-down

Precharge power-down L L X Maintain precharge power-down

Self refresh L L X Maintain self refresh

Active power-down L H DESELECT or NOP Exit active power-down 5

Deep power-down L H DESELECT or NOP Exit deep power-down 6

Precharge power-down L H DESELECT or NOP Exit precharge power-down

Self refresh L H DESELECT or NOP Exit self refresh 5, 7

Bank(s) active H L DESELECT or NOP Active power-down entry

All banks idle H L BURST TERMINATE Deep power-down entry

All banks idle H L DESELECT or NOP Precharge power-down entry

All banks idle H L AUTO REFRESH Self refresh entry

H H See Table 19 (page 45)

Notes: 1. CKEn is the logic state of CKE at clock edge n; CKEn - 1 was the state of CKE at the previ-

ous clock edge.

2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.

3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of

COMMANDn.

4. All states and sequences not shown are illegal or reserved.

5. DESELECT or NOP commands should be issued on each clock edge occurring during the

tXP or tXSR period.

6. After exiting deep power-down mode, a full DRAM initialization sequence is required.

7. The clock must toggle at least two times during the tXSR period.

512Mb: x16, x32 Mobile LPDDR SDRAM

Truth Tables

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice.

State Diagram

Figure 15: Simplified State Diagram

Power

applied

SREF

LMR AREF

SREFX

ACT

CKEL

CKEH

PRE

PREALL

LMR

EMR

Deep

power-

down

Self

refresh

Idle:

all banks

precharged

Row

active

Burst

terminate

READING

Automatic sequence

Command sequence

WRITING

WRITE

WRITING

WRITE A

Precharging

Active

power-

down

Precharge

power-

down

Auto

refresh

PRE

WRITE A READ A

READ A

PRE

READ A

READ

BST

DPD

DPDX

READ

SRR

READ

PRE

LMR

ACT = ACTIVE DPDX = Exit deep power-down READ A = READ w/ auto precharge

AREF = AUTO REFRESH EMR = LOAD EXTENDED MODE REGISTER SREF = Enter self refresh

BST = BURST TERMINATE LMR = LOAD MODE REGISTER SREFX = Exit self refresh

CKEH = Exit power-down PRE = PRECHARGE SRR = STATUS REGISTER READ

CKEL = Enter power-down PREALL = PRECHARGE all banks WRITE = WRITE w/o auto precharge

DPD = Enter deep power-down READ = READ w/o auto precharge WRITE A = WRITE w/ auto precharge

WRITE

WRITE A

512Mb: x16, x32 Mobile LPDDR SDRAM

State Diagram

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Initialization

Prior to normal operation, the device must be powered up and initialized in a prede-

fined manner. Using initialization procedures other than those specified will result in

undefined operation.

If there is an interruption to the device power, the device must be re-initialized using

the initialization sequence described below to ensure proper functionality of the device.

To properly initialize the device, this sequence must be followed:

1. The core power (VDD) and I/O power (VDDQ) must be brought up simultaneously.

It is recommended that VDD and VDDQ be from the same power source, or VDDQ

must never exceed VDD. Standard initialization requires that CKE be asserted

HIGH (see Figure 16 (page 50)). Alternatively, initialization can be completed

with CKE LOW provided that CKE transitions HIGH tIS prior to T0 (see Figure 17

(page 51)).

2. When power supply voltages are stable and the CKE has been driven HIGH, it is

safe to apply the clock.

3. When the clock is stable, a 200μs minimum delay is required by the Mobile LPDDR

prior to applying an executable command. During this time, NOP or DESELECT

commands must be issued on the command bus.

4. Issue a PRECHARGE ALL command.

5. Issue NOP or DESELECT commands for at least tRP time.

6. Issue an AUTO REFRESH command followed by NOP or DESELECT commands

for at least tRFC time. Issue a second AUTO REFRESH command followed by NOP

or DESELECT commands for at least tRFC time. Two AUTO REFRESH commands

must be issued. Typically, both of these commands are issued at this stage as de-

scribed above.

7. Using the LOAD MODE REGISTER command, load the standard mode register as

desired.

8. Issue NOP or DESELECT commands for at least tMRD time.

9. Using the LOAD MODE REGISTER command, load the extended mode register to

the desired operating modes. Note that the sequence in which the standard and

extended mode registers are programmed is not critical.

10. Issue NOP or DESELECT commands for at least tMRD time.

After steps 1–10 are completed, the device has been properly initialized and is ready to

receive any valid command.

512Mb: x16, x32 Mobile LPDDR SDRAM

Initialization

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 16: Initialize and Load Mode Registers

CKE

LVCMOS

HIGH LEVEL

BA0, BA1

Load standard

mode register Load extended

mode register

tMRD4

tRFC4tRFC4

Power-up: VDD and CK stable

T = 200µs

High-Z

DQS High-Z

Address Row

A10 Row

CK#

VDD

VDDQ

tCH tCL

tCK

Command1LMRNOP LMR

tIS tIH

BA0 = L,

BA1 = L BA0 = L,

BA1 = H

Op-code Op-code

tIS tIH

Op-code Op-code

PRE

All banks

T0 T1 Ta0 Tb0 Tc0 Td0 Te0 Tf0

Don’t Care

Bank

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

tRP4

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

NOP2AR AR

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

NOP3

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

ACT3

Notes: 1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-

FRESH command; ACT = ACTIVE command.

2. NOP or DESELECT commands are required for at least 200μs.

3. Other valid commands are possible.

4. NOPs or DESELECTs are required during this time.

512Mb: x16, x32 Mobile LPDDR SDRAM

Initialization

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 17: Alternate Initialization with CKE LOW

CKE LVCMOS

LOW level

CK#

VDD

VDDQ

Command1LMR LMR

tIS

tCH tCL

tIH

PRE

T0 T1 Ta0 Tb0 Tc0 Td0 Te0 Tf0

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

NOP2AR AR NOP3

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

ACT3

(

)(

)

(

)(

)

Power up: VDD and CK stable

T = 200µs

NOP

Don’t Care

Notes: 1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-

FRESH command; ACT = ACTIVE command.

2. NOP or DESELECT commands are required for at least 200μs.

3. Other valid commands are possible.

512Mb: x16, x32 Mobile LPDDR SDRAM

Initialization

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Standard Mode Register

The standard mode register bit definition enables the selection of burst length, burst

type, CAS latency (CL), and operating mode, as shown in Figure 18. Reserved states

should not be used as this may result in setting the device into an unknown state or

cause incompatibility with future versions of LPDDR devices. The standard mode regis-

ter is programmed via the LOAD MODE REGISTER command (with BA0 = 0 and BA1 =

0) and will retain the stored information until it is programmed again, until the device

goes into deep power-down mode, or until the device loses power.

Reprogramming the mode register will not alter the contents of the memory, provided it

is performed correctly. The mode register must be loaded when all banks are idle and

no bursts are in progress, and the controller must wait tMRD before initiating the subse-

quent operation. Violating any of these requirements will result in unspecified opera-

tion.

Figure 18: Standard Mode Register Definition

M3 = 0

Reserved

M3 = 1

Reserved

Burst Type

Sequential

Interleaved

CAS Latency

Reserved

Burst Length

Burst LengthCAS Latency

A9 A7 A6 A5 A4 A3A8 A2 A1 A0

Standard mode register (Mx)

Address bus

9 7 6 5 4 38 2 1 0

Operating Mode

A10An ...

BA0

BA1

10...n

n + 1

n + 2

–

M10

–

Operating Mode

Normal operation

All other states reserved

Mode Register Definition

Standard mode register

Status register

Extended mode register

Reserved

Mn + 2

Mn + 1

–

...

Note: 1. The integer n is equal to the most significant address bit.

512Mb: x16, x32 Mobile LPDDR SDRAM

Standard Mode Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Burst Length

Read and write accesses to the device are burst-oriented, and the burst length (BL) is

programmable. The burst length determines the maximum number of column loca-

tions that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4,

8, or 16 locations are available for both sequential and interleaved burst types.

When a READ or WRITE command is issued, a block of columns equal to the burst

length is effectively selected. All accesses for that burst take place within this block,

meaning that the burst will wrap when a boundary is reached. The block is uniquely se-

lected by A[i:1] when BL = 2, by A[i:2] when BL = 4, by A[i:3] when BL = 8, and by A[i:4]

when BL = 16, where Ai is the most significant column address bit for a given configura-

tion. The remaining (least significant) address bits are used to specify the starting loca-

tion within the block. The programmed burst length applies to both READ and WRITE

bursts.

Burst Type

Accesses within a given burst can be programmed to be either sequential or interleaved

via the standard mode register.

The ordering of accesses within a burst is determined by the burst length, the burst

type, and the starting column address.

Table 21: Burst Definition Table

Burst

Length Starting Column Address

Order of Accesses Within a Burst

Type = Sequential Type = Interleaved

2 A0

0 0-1 0-1

1 1-0 1-0

4 A1 A0

0 0 0-1-2-3 0-1-2-3

0 1 1-2-3-0 1-0-3-2

1 0 2-3-0-1 2-3-0-1

1 1 3-0-1-2 3-2-1-0

8 A2 A1 A0

0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7

0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6

0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5

0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4

1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3

1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2

1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1

1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0

16 A3 A2 A1 A0

512Mb: x16, x32 Mobile LPDDR SDRAM

Standard Mode Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 21: Burst Definition Table (Continued)

Burst

Length Starting Column Address

Order of Accesses Within a Burst

Type = Sequential Type = Interleaved

0 0 0 0 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F

0 0 0 1 1-2-3-4-5-6-7-8-9-A-B-C-D-E-F-0 1-0-3-2-5-4-7-6-9-8-B-A-D-C-F-E

0 0 1 0 2-3-4-5-6-7-8-9-A-B-C-D-E-F-0-1 2-3-0-1-6-7-4-5-A-B-8-9-E-F-C-D

0 0 1 1 3-4-5-6-7-8-9-A-B-C-D-E-F-0-1-2 3-2-1-0-7-6-5-4-B-A-9-8-F-E-D-C

0 1 0 0 4-5-6-7-8-9-A-B-C-D-E-F-0-1-2-3 4-5-6-7-0-1-2-3-C-D-E-F-8-9-A-B

0 1 0 1 5-6-7-8-9-A-B-C-D-E-F-0-1-2-3-4 5-4-7-6-1-0-3-2-D-C-F-E-9-8-B-A

0 1 1 0 6-7-8-9-A-B-C-D-E-F-0-1-2-3-4-5 6-7-4-5-2-3-0-1-E-F-C-D-A-B-8-9

0 1 1 1 7-8-9-A-B-C-D-E-F-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0-F-E-D-C-B-A-9-8

1 0 0 0 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7

1 0 0 1 9-A-B-C-D-E-F-0-1-2-3-4-5-6-7-8 9-8-B-A-D-C-F-E-1-0-3-2-5-4-7-6

1 0 1 0 A-B-C-D-E-F-0-1-2-3-4-5-6-7-8-9 A-B-8-9-E-F-C-D-2-3-0-1-6-7-4-5

1 0 1 1 B-C-D-E-F-0-1-2-3-4-5-6-7-8-9-A B-A-9-8-F-E-D-C-3-2-1-0-7-6-5-4

1 1 0 0 C-D-E-F-0-1-2-3-4-5-6-7-8-9-A-B C-D-E-F-8-9-A-B-4-5-6-7-0-1-2-3

1 1 0 1 D-E-F-0-1-2-3-4-5-6-7-8-9-A-B-C D-C-F-E-9-8-B-A-5-4-7-6-1-0-3-2

1 1 1 0 E-F-0-1-2-3-4-5-6-7-8-9-A-B-C-D E-F-C-D-A-B-8-9-6-7-4-5-2-3-0-1

1 1 1 1 F-0-1-2-3-4-5-6-7-8-9-A-B-C-D-E F-E-D-C-B-A-9-8-7-6-5-4-3-2-1-0

CAS Latency

The CAS latency (CL) is the delay, in clock cycles, between the registration of a READ

command and the availability of the first output data. The latency can be set to 2 or 3

clocks, as shown in Figure 19 (page 55).

For CL = 3, if the READ command is registered at clock edge n, then the data will be

nominally available at (n + 2 clocks + tAC). For CL = 2, if the READ command is regis-

tered at clock edge n, then the data will be nominally available at (n + 1 clock + tAC).

512Mb: x16, x32 Mobile LPDDR SDRAM

Standard Mode Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 19: CAS Latency

CK#

T0 T1 T2 T2n T3 T3nT1n

Command

DQS

CL = 2

T0 T1 T2 T2n T3 T3n

Don’t CareTransitioning Data

READ NOP NOP NOP

Command

DQS

CL = 3

READ NOP NOP NOP

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

DOUT

n + 1

CL - 1 tAC

Operating Mode

The normal operating mode is selected by issuing a LOAD MODE REGISTER command

with bits A[n:7] each set to zero, and bits A[6:0] set to the desired values.

All other combinations of values for A[n:7] are reserved for future use. Reserved states

should not be used because unknown operation or incompatibility with future versions

may result.

512Mb: x16, x32 Mobile LPDDR SDRAM

Standard Mode Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Extended Mode Register

The EMR controls additional functions beyond those set by the mode registers. These

additional functions include drive strength, TCSR, and PASR.

The EMR is programmed via the LOAD MODE REGISTER command with BA0 = 0 and

BA1 = 1. Information in the EMR will be retained until it is programmed again, the de-

vice goes into deep power-down mode, or the device loses power.

Figure 20: Extended Mode Register

Extended mode

Address bus

9 7 6 5 4 38 2 1

PASR TCSR1

DSOperation0

A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

10...

Partial-Array Self Refresh Coverage

Full array

1/2 array

1/4 array

Reserved

1/8 array

1/16 array

Reserved

BA0

...

BA1

nn + 1n + 2 0

E10

–

...

–

Normal AR operation

All other states reserved

Drive Strength

Full strength

1/2 strength

1/4 strength

3/4 strength

Reserved

E7–E0

Valid

–

En + 2

En + 1

Mode Register Definition

Standard mode register

Status register

Extended mode register

Reserved

Notes: 1. On-die temperature sensor is used in place of TCSR. Setting these bits will have no ef-

fect.

2. The integer n is equal to the most significant address bit.

Temperature-Compensated Self Refresh

This device includes a temperature sensor that is implemented for automatic control of

the self refresh oscillator. Programming the temperature-compensated self refresh

(TCSR) bits will have no effect on the device. The self refresh oscillator will continue to

refresh at the optimal factory-programmed rate for the device temperature.

512Mb: x16, x32 Mobile LPDDR SDRAM

Extended Mode Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Partial-Array Self Refresh

For further power savings during self refresh, the partial-array self refresh (PASR) feature

enables the controller to select the amount of memory to be refreshed during self re-

fresh. The refresh options include:

• Full array: banks 0, 1, 2, and 3

• One-half array: banks 0 and 1

• One-quarter array: bank 0

• One-eighth array: bank 0 with row address most significant bit (MSB) = 0

• One-sixteenth array: bank 0 with row address MSB = 0 and row address MSB - 1 = 0

READ and WRITE commands can still be issued to the full array during standard opera-

tion, but only the selected regions of the array will be refreshed during self refresh. Data

in regions that are not selected will be lost.

Output Drive Strength

Because the device is designed for use in smaller systems that are typically point-to-

point connections, an option to control the drive strength of the output buffers is provi-

ded. Drive strength should be selected based on the expected loading of the memory

bus. The output driver settings are 25Ω, 37Ω, and 55Ω internal impedance for full, three-

quarter, and one-half drive strengths, respectively.

512Mb: x16, x32 Mobile LPDDR SDRAM

Extended Mode Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Status Read Register

The status read register (SRR) is used to read the manufacturer ID, revision ID, refresh

multiplier, width type, and density of the device, as shown in Figure 22 (page 59). The

SRR is read via the LOAD MODE REGISTER command with BA0 = 1 and BA1 = 0. The

sequence to perform an SRR command is as follows:

1. The device must be properly initialized and in the idle or all banks precharged

state.

2. Issue a LOAD MODE REGISTER command with BA[1:0] = 01 and all address pins

set to 0.

3. Wait tSRR; only NOP or DESELECT commands are supported during the tSRR

time.

4. Issue a READ command.

5. Subsequent commands to the device must be issued tSRC after the SRR READ

command is issued; only NOP or DESELECT commands are supported during

tSRC.

SRR output is read with a burst length of 2. SRR data is driven to the outputs on the first

bit of the burst, with the output being “Don’t Care” on the second bit of the burst.

Figure 21: Status Read Register Timing

Command

BA0, BA1

CK#

Address

READ NOP NOP

T0 T1 T2 T3 T4 T5 T6

Don’t Care

NOP

DQS

DQ SRR

out4

tRP

tSRR tSRC

PRE1LMR NOP2NOP Valid

BA0 = 1

BA1 = 0

Note 5

CL = 3

Transitioning Data

Notes: 1. All banks must be idle prior to status register read.

2. NOP or DESELECT commands are required between the LMR and READ commands

(tSRR), and between the READ and the next VALID command (tSRC).

3. CAS latency is predetermined by the programming of the mode register. CL = 3 is shown

as an example only.

4. Burst length is fixed to 2 for SRR regardless of the value programmed by the mode reg-

ister.

5. The second bit of the data-out burst is a “Don’t Care.”

512Mb: x16, x32 Mobile LPDDR SDRAM

Status Read Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 22: Status Register Definition

Status register

I/O bus (CLK L->H edge)

9 7 6 5 4 38 2 1

Manufacturer ID

Reserved

Revision IDRefresh Rate

S12

DQ11

S11

DQ10

S10

DQ9

DQ8

DQ7

DQ6

DQ5

DQ4

DQ3

DQ2

DQ1

DQ0

101112

S2 S1 Manufacturer ID

Reserved

Samsung

Infineon

Elpida

Reserved

DQ14

DQ12

S14

DQ31...DQ16

S31..S16

Reserved1

131431..16 0

S13

11 1

11 0

10 1

10 0

01 1

01 0

00 1

00 0

11 1

11 0

10 1

10 0

01 1

01 0

00 1

00 0

Reserved

Winbond

Reserved

Micron

ESMT

NVM

Width

Type

Density

DQ13

DQ15

S15

S6 S5 Revision ID

The manufacturer’s revision number starts at ‘0000’

and increments by ‘0001’ each time a change in the

specification (AC timings or feature set), IBIS (pull-

up or pull-down characteristics), or process occurs.

XX X

00 0

... ... ...

...

S10 S9 Refresh Multiplier2

Reserved

11 1

11 0

10 1

10 0

01 1

01 0

00 1

00 0

0.25X

Device Width

32 bits

S11

16 bits

Device Type

LPDDR2

S12

LPDDR

S15 S14 Density

11 1

11 0

10 1

10 0

01 1

01 0

00 1

00 0

S13

2Gb

Reserved

1Gb

512Mb

256Mb

128Mb

Reserved

Notes: 1. Reserved bits should be set to 0 for future compatibility.

2. Refresh multiplier is based on the memory device on-board temperature sensor. Re-

quired average periodic refresh interval = tREFI × multiplier.

512Mb: x16, x32 Mobile LPDDR SDRAM

Status Read Register

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Bank/Row Activation

Before any READ or WRITE commands can be issued to a bank within the device, a row

in that bank must be opened. This is accomplished via the ACTIVE command, which

selects both the bank and the row to be activated (see the ACTIVE Command figure).

After a row is opened with the ACTIVE command, a READ or WRITE command can be

issued to that row, subject to the tRCD specification.

A subsequent ACTIVE command to a different row in the same bank can only be issued

after the previous active row has been precharged. The minimum time interval between

successive ACTIVE commands to the same bank is defined by tRC.

A subsequent ACTIVE command to another bank can be issued while the first bank is

being accessed, which results in a reduction of total row access overhead. The mini-

mum time interval between successive ACTIVE commands to different banks is defined

by tRRD.

512Mb: x16, x32 Mobile LPDDR SDRAM

Bank/Row Activation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice.

READ Operation

READ burst operations are initiated with a READ command, as shown in Figure 11

(page 39). The starting column and bank addresses are provided with the READ com-

mand, and auto precharge is either enabled or disabled for that burst access. If auto

precharge is enabled, the row being accessed is precharged at the completion of the

burst. For the READ commands used in the following illustrations, auto precharge is

disabled.

During READ bursts, the valid data-out element from the starting column address will

be available following the CL after the READ command. Each subsequent data-out ele-

ment will be valid nominally at the next positive or negative clock edge. Figure 23

(page 62) shows general timing for each possible CL setting.

DQS is driven by the device along with output data. The initial LOW state on DQS is

known as the read preamble; the LOW state coincident with the last data-out element is

known as the read postamble. The READ burst is considered complete when the read

postamble is satisfied.

Upon completion of a burst, assuming no other commands have been initiated, the DQ

will go to High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out

window hold), and the valid data window is depicted in Figure 30 (page 69) and Fig-

ure 31 (page 70). A detailed explanation of tDQSCK (DQS transition skew to CK) and

tAC (data-out transition skew to CK) is depicted in Figure 32 (page 71).

Data from any READ burst can be truncated by a READ or WRITE command to the

same or alternate bank, by a BURST TERMINATE command, or by a PRECHARGE com-

mand to the same bank, provided that the auto precharge mode was not activated.

Data from any READ burst can be concatenated with or truncated with data from a sub-

sequent READ command. In either case, a continuous flow of data can be maintained.

The first data element from the new burst either follows the last element of a completed

burst or the last desired data element of a longer burst that is being truncated. The new

READ command should be issued x cycles after the first READ command, where x

equals the number of desired data element pairs (pairs are required by the 2n-prefetch

architecture). This is shown in Figure 24 (page 63).

A READ command can be initiated on any clock cycle following a previous READ com-

mand. Nonconsecutive read data is shown in Figure 25 (page 64). Full-speed random

read accesses within a page (or pages) can be performed as shown in Figure 26

(page 65).

Data from any READ burst can be truncated with a BURST TERMINATE command, as

shown in Figure 27 (page 66). The BURST TERMINATE latency is equal to the READ

(CAS) latency; for example, the BURST TERMINATE command should be issued x cy-

cles after the READ command, where x equals the number of desired data element pairs

(pairs are required by the 2n-prefetch architecture).

Data from any READ burst must be completed or truncated before a subsequent WRITE

command can be issued. If truncation is necessary, the BURST TERMINATE command

must be used, as shown in Figure 28 (page 67). A READ burst can be followed by, or

truncated with, a PRECHARGE command to the same bank, provided that auto pre-

charge was not activated. The PRECHARGE command should be issued x cycles after

the READ command, where x equals the number of desired data element pairs. This is

shown in Figure 29 (page 68). Following the PRECHARGE command, a subsequent

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice.

command to the same bank cannot be issued until tRP is met. Part of the row precharge

time is hidden during the access of the last data elements.

Figure 23: READ Burst

NOP NOP

DOUT n1 DOUT n + 1

NOP NOP NOPREAD

Bank a, Col n

T0 T1 T1n T2 T2n T3 T3n T4 T5

DOUT n + 2 DOUT n + 3

CK#

Command

Address

DQS

CL = 2

NOP NOP NOP NOP NOPREAD

Bank a, Col n

T0 T1 T2 T2n T3 T3n T4 T5

CK#

Command

Address

DQS

CL = 3

Don’t Care Transitioning Data

DOUT n DOUT n + 1 DOUT n + 2 DOUT n + 3

Notes: 1. DOUT n = data-out from column n.

2. BL = 4.

3. Shown with nominal tAC, tDQSCK, and tDQSQ.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 24: Consecutive READ Bursts

CK#

CK# T0 T1 T2 T3T2n T3n T4

T0 T1 T2 T3T2n T3n T4 T5T1n T4n T5n

T4n T5n

Command READ NOP READ NOP NOP NOP

Address Bank,

Col n

Bank,

Col b

Command READ NOP READ NOP NOP NOP

Address Bank,

Col n

Bank,

Col b

Don’t Care Transitioning Data

DQS

CL = 2

DQS

CL = 3

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

DOUT

b + 1

DOUT

b + 3

DOUT

b + 2

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

DOUT

b + 1

Notes: 1. DOUTn (or b) = data-out from column n (or column b).

2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts

the first).

3. Shown with nominal tAC, tDQSCK, and tDQSQ.

4. Example applies only when READ commands are issued to same device.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 25: Nonconsecutive READ Bursts

CK# T0 T1 T2 T3T2n T3n T4 T5T1n T4n T5n T6

Command READ NOP NOP NOP NOP NOP

Address Bank,

Col n

READ

Bank,

Col b

Don’t Care Transitioning Data

DQS

CL = 2 CL = 2

Command READ NOP NOP NOP NOP NOP

Address Bank,

Col n

READ

Bank,

Col b

DQS

CL = 3 CL = 3

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

DOUT

b + 1

DOUT

b + 2

Notes: 1. DOUTn (or b) = data-out from column n (or column b).

2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).

3. Shown with nominal tAC, tDQSCK, and tDQSQ.

4. Example applies when READ commands are issued to different devices or nonconsecu-

tive READs.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 26: Random Read Accesses

CK# T0 T1 T2 T3T2n T3n T4 T5T1n T4n T5n

Command READ READ READ NOP NOP

Address Bank,

Col n

Bank,

Col x

Bank,

Col b

Bank,

Col x

Bank,

Col b

READ

Bank,

Col g

Command

Address

READ READ READ NOP NOP

Bank,

Col n

READ

Bank,

Col g

Don’t Care Transitioning Data

DQS

CL = 2

DQS

CL = 3

DOUT

n + 1

DOUT

x + 1

DOUT

b + 1

DOUT

g + 1

DOUT

n + 1

DOUT

b + 1

DOUT

x + 1

DOUT

Notes: 1. DOUTn (or x, b, g) = data-out from column n (or column x, column b, column g).

2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).

3. READs are to an active row in any bank.

4. Shown with nominal tAC, tDQSCK, and tDQSQ.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 27: Terminating a READ Burst

CK#

T0 T1 T2 T3T2n T4 T5T1n

CK# T0 T1 T2 T3T2n T4 T5T3n

Command READ1BST2NOP NOP NOP NOP

Address Bank a,

Col n

Don’t Care Transitioning Data

DQ3

DQS

CL = 2

Command READ1BST2NOP NOP NOP NOP

Address

DQ3

DQS

CL = 3

DOUT

n + 1

DOUT

n + 1

Bank a,

Col n

Notes: 1. BL = 4, 8, or 16.

2. BST = BURST TERMINATE command; page remains open.

3. DOUTn = data-out from column n.

4. Shown with nominal tAC, tDQSCK, and tDQSQ.

5. CKE = HIGH.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 28: READ-to-WRITE

CK# T0 T1 T2 T3T2n T3n T4 T5T1n T4n T5n

CK# T0 T1 T2 T3T2n T3n T4 T5T4n T5n

Don’t Care Transitioning Data

Command READ1BST2NOP NOP NOP

Address Bank,

Col n

WRITE1

Bank,

Col b

tDQSS

(NOM)

DQ3,4

DQS

CL = 2

Command READ1BST2NOP NOP

Address Bank,

Col n

WRITE1

Bank,

Col b

tDQSS

(NOM)

DQ3,4

DQS

CL = 3

NOP

DOUT

n + 1

b + 1

DIN

DOUT

n + 1

b+1

b+2

b+3

DIN

Notes: 1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-

mand shown can be NOP).

2. BST = BURST TERMINATE command; page remains open.

3. DOUTn = data-out from column n.

4. DINb = data-in from column b.

5. Shown with nominal tAC, tDQSCK, and tDQSQ.

6. CKE = HIGH.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 29: READ-to-PRECHARGE

CK# T0 T1 T2 T3T2n T3n T4 T5T1n

Command READ1NOP PRE2NOP NOP ACT3

Address Banka,

Col n

Bank a,

(a or all)

Bank a,

Row

Banka,

Col n

Bank a,

(a or all)

Bank a,

Row

DQ4

DQS

CL = 2 tRP

READ1NOP PRE2NOP NOP ACT3

Command

Address

DQ4

DQS

CL = 3

tRP

Don’t Care Transitioning Data

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

DOUT

n + 1

DOUT

n + 3

DOUT

n + 2

Notes: 1. BL = 4, or an interrupted burst of 8 or 16.

2. PRE = PRECHARGE command.

3. ACT = ACTIVE command.

4. DOUTn = data-out from column n.

5. Shown with nominal tAC, tDQSCK, and tDQSQ.

6. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out.

7. A READ command with auto precharge enabled, provided tRAS (MIN) is met, would

cause a precharge to be performed at x number of clock cycles after the READ com-

mand, where x = BL/2.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 30: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x16)

DQ (Last data valid)4

DQ4

LDQS3

DQ (Last data valid)4

DQ (First data no longer valid)4

DQ[7:0] and LDQS, collectively6

T2n

T3n

CK#

T1 T2 T3 T4T2n T3n

tQH

tDQSQ

Data valid

window

Data valid

window

DQ (Last data valid)7

DQ7

UDQS3

DQ (Last data valid)7

DQ (First data no longer valid)7

DQ[15:8] and UDQS, collectively6

T2n

T3n

tQH

tDQSQ

tHP

tQH

Data valid

window

Data valid

window Data valid

window

Data valid

window

Data valid

window

Upper Byte

Lower Byte

Data valid

window

Notes: 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active.

2. tDQSQ is derived at each DQS clock edge and is not cumulative over time and begins

with DQS transition and ends with the last valid DQ transition.

3. DQ transitioning after DQS transitions define the tDQSQ window. LDQS defines the low-

er byte and UDQS defines the upper byte.

4. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7.

5. tQH is derived from tHP: tQH = tHP - tQHS.

6. The data valid window is derived for each DQS transitions and is defined as tQH - tDQSQ.

7. DQ8, DQ9, DQ10, DQ11, DQ12, DQ13, DQ14, or DQ15.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 31: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x32)

DQ (Last data valid)4

DQ4

DQS0/DQS1/DQS2/DQS3

DQ (Last data valid)

DQ (First data no longer valid)

DQ (First data no longer valid)4

DQ and DQS, collectively6,7

CK#

Byte 0

Byte 1

Byte 2

Byte 3

Data valid

window

Data valid

window

Data valid

window

Data valid

window

T1 T2 T2n T3 T3n T4

tHP1

tDQSQ2,3 tDQSQ2,3 tDQSQ2,3 tDQSQ2,3

T2 T2n T3 T3n

tQH5tQH5tQH5

tHP1tHP1tHP1tHP1tHP1

tQH5

Notes: 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active.

2. DQ transitioning after DQS transitions define the tDQSQ window.

3. tDQSQ is derived at each DQS clock edge and is not cumulative over time; it begins with

DQS transition and ends with the last valid DQ transition.

4. Byte 0 is DQ[7:0], byte 1 is DQ[15:8], byte 2 is DQ[23:16], byte 3 is DQ[31:24].

5. tQH is derived from tHP: tQH = tHP - tQHS.

6. The data valid window is derived for each DQS transition and is tQH - tDQSQ.

7. DQ[7:0] and DQS0 for byte 0; DQ[15:8] and DQS1 for byte 1; DQ[23:16] and DQS2 for

byte 2; DQ[31:23] and DQS3 for byte 3.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 32: Data Output Timing – tAC and tDQSCK

CK#

DQS or LDQS/UDQS2

T0 T1 T2 T3 T4 T5

T2n T3n T4n T5n T6

tRPST

tRPRE

tHZ

Command NOP1NOP1NOP1

NOP1NOP1

All DQ values, collectively3T3

T2n T4n T5n

tAC4 tAC4

CL = 3

NOP1

READ

tLZ

Don’t Care

T3n

tDQSCK tDQSCK

Notes: 1. Commands other than NOP can be valid during this cycle.

2. DQ transitioning after DQS transitions define tDQSQ window.

3. All DQ must transition by tDQSQ after DQS transitions, regardless of tAC.

4. tAC is the DQ output window relative to CK and is the long-term component of DQ

skew.

512Mb: x16, x32 Mobile LPDDR SDRAM

READ Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice.

WRITE Operation

WRITE bursts are initiated with a WRITE command, as shown in Figure 12 (page 40).

The starting column and bank addresses are provided with the WRITE command, and

auto precharge is either enabled or disabled for that access. If auto precharge is ena-

bled, the row being accessed is precharged at the completion of the burst. For the

WRITE commands used in the following illustrations, auto precharge is disabled. Basic

data input timing is shown in Figure 33 (page 73) (this timing applies to all WRITE op-

erations).

Input data appearing on the data bus is written to the memory array subject to the state

of data mask (DM) inputs coincident with the data. If DM is registered LOW, the corre-

sponding data will be written; if DM is registered HIGH, the corresponding data will be

ignored, and the write will not be executed to that byte/column location. DM operation

is illustrated in Figure 34 (page 74).

During WRITE bursts, the first valid data-in element will be registered on the first rising

edge of DQS following the WRITE command, and subsequent data elements will be reg-

istered on successive edges of DQS. The LOW state of DQS between the WRITE com-

mand and the first rising edge is known as the write preamble; the LOW state of DQS

following the last data-in element is known as the write postamble. The WRITE burst is

complete when the write postamble and tWR or tWTR are satisfied.

The time between the WRITE command and the first corresponding rising edge of DQS

(tDQSS) is specified with a relatively wide range (75%–125% of one clock cycle). All

WRITE diagrams show the nominal case. Where the two extreme cases (that is, tDQSS

[MIN] and tDQSS [MAX]) might not be obvious, they have also been included. Figure 35

(page 75) shows the nominal case and the extremes of tDQSS for a burst of 4. Upon

completion of a burst, assuming no other commands have been initiated, the DQ will

remain High-Z and any additional input data will be ignored.

Data for any WRITE burst can be concatenated with or truncated by a subsequent

WRITE command. In either case, a continuous flow of input data can be maintained.

The new WRITE command can be issued on any positive edge of clock following the

previous WRITE command. The first data element from the new burst is applied after

either the last element of a completed burst or the last desired data element of a longer

burst that is being truncated. The new WRITE command should be issued x cycles after

the first WRITE command, where x equals the number of desired data element pairs

(pairs are required by the 2n-prefetch architecture).

Figure 36 (page 76) shows concatenated bursts of 4. An example of nonconsecutive

WRITEs is shown in Figure 37 (page 76). Full-speed random write accesses within a

page or pages can be performed, as shown in Figure 38 (page 77).

Data for any WRITE burst can be followed by a subsequent READ command. To follow a

WRITE without truncating the WRITE burst, tWTR should be met, as shown in Figure 39

(page 78).

Data for any WRITE burst can be truncated by a subsequent READ command, as shown

in Figure 40 (page 79). Note that only the data-in pairs that are registered prior to the

tWTR period are written to the internal array, and any subsequent data-in should be

masked with DM, as shown in Figure 41 (page 80).

Data for any WRITE burst can be followed by a subsequent PRECHARGE command. To

follow a WRITE without truncating the WRITE burst, tWR should be met, as shown in

Figure 42 (page 81).

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Data for any WRITE burst can be truncated by a subsequent PRECHARGE command, as

shown in Figure 43 (page 82) and Figure 44 (page 83). Note that only the data-in

pairs that are registered prior to the tWR period are written to the internal array, and any

subsequent data-in should be masked with DM, as shown in Figure 43 (page 82) and

Figure 44 (page 83). After the PRECHARGE command, a subsequent command to the

same bank cannot be issued until tRP is met.

Figure 33: Data Input Timing

tDQSS

tDQSH tWPST

tDH

tDS

tDQSL

tDSS3 tDSH2tDSH2 tDSS3

CK#

T01T1 T1n T2 T2n T3

DIN

Don’t Care

Transitioning Data

tWPRE

tWPRES

DQS4

DM5

Notes: 1. WRITE command issued at T0.

2. tDSH (MIN) generally occurs during tDQSS (MIN).

3. tDSS (MIN) generally occurs during tDQSS (MAX).

4. For x16, LDQS controls the lower byte; UDQS controls the upper byte. For x32, DQS0

controls DQ[7:0], DQS1 controls DQ[15:8], DQS2 controls DQ[23:16], and DQS3 controls

DQ[31:24].

5. For x16, LDM controls the lower byte; UDM controls the upper byte. For x32, DM0 con-

trols DQ[7:0], DM1 controls DQ[15:8], DM2 controls DQ[23:16], and DM3 controls

DQ[31:24].

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 34: Write – DM Operation

CK#

CKE

A10

BA0, BA1

tCH tCL

tIS

tIH

tIS

tIH

tIS tIH

Row

tRCD

tRAS tRP

tWR

T0 T1 T2 T3 T4 T5 T5n T6 T7 T8T4n

NOP1

Command ACTIVE

Row Col n

WRITE2NOP1

One bank

All banks

Bank xBank x

NOP1NOP1NOP11PRE3

tDQSL tDQSH tWPST

Bank x5

DQ6

DQS

tDS tDH

Don’t Care Transitioning Data

Address

tWPRES tWPRE

DIN

n+2

DIN

NOP1

Note 4

tDQSS (NOM)

tCK

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at

these times.

2. BL = 4 in the case shown.

3. PRE = PRECHARGE.

4. Disable auto precharge.

5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.

6. DINn = data-in from column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 35: WRITE Burst

DQS

tDQSS (MAX)

tDQSS (NOM)

tDQSS (MIN)

tDQSS

DQ3

CK#

Command WRITE1,2 NOP NOP

Address Bank a,

Col b

NOP

T0 T1 T2 T3T2n

DQS

DQ3

DQS

DQ3

DIN

Don’t Care Transitioning Data

DIN

b+1

DIN

b+2

DIN

b+3

DIN

b+1

DIN

b+2

DIN

b+3

DIN

b+1

DIN

b+2

DIN

b+3

tDQSS

Notes: 1. An uninterrupted burst of 4 is shown.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. DINb = data-in for column b.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 36: Consecutive WRITE-to-WRITE

CK#

Command WRITE1, 2 NOP WRITE1, 2 NOP NOP

Address Bank,

Col b

NOP

Bank,

Col n

T0 T1 T2 T3T2n T4 T5T4nT3nT1n

DQ3

DQS

Don’t Care Transitioning Data

tDQSS (NOM)

DIN

b+1

DIN

b+2

DIN

b+3

DIN

n+1

DIN

n+2

DIN

n+3

DIN

Notes: 1. Each WRITE command can be to any bank.

2. An uninterrupted burst of 4 is shown.

3. DINb (n) = data-in for column b (n).

Figure 37: Nonconsecutive WRITE-to-WRITE

CK#

Command WRITE1, 2 NOP NOP NOP NOP

Address Bank,

Col b

Bank,

Col n

T0 T1 T2 T3T2n T4 T5T4nT1n T5n

DQ3

DQS

tDQSS (NOM)

Don’t Care Transitioning Data

DIN

b+1

DIN

b+2

DIN

b+3

DIN

n+1

DIN

n+2

DIN

n+3

WRITE1,2

DIN

Notes: 1. Each WRITE command can be to any bank.

2. An uninterrupted burst of 4 is shown.

3. DINb (n) = data-in for column b (n).

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 38: Random WRITE Cycles

tDQSS (NOM)

CK#

Command WRITE1,2 NOP

Address Bank,

Col b

Bank,

Col x

Bank,

Col n

Bank,

Col g

Bank,

Col a

T0 T1 T2 T3T2n T4 T5T4nT1n T3n T5n

DQ3,4

DQS

Don’t Care Transitioning Data

DIN

b’

DIN

x’

DIN

n’

DIN

a’

DIN

g’

DIN

WRITE1,2 WRITE1,2 WRITE1,2 WRITE1,2

Notes: 1. Each WRITE command can be to any bank.

2. Programmed BL = 2, 4, 8, or 16 in cases shown.

3. DINb (or x, n, a, g) = data-in for column b (or x, n, a, g).

4. b' (or x, n, a, g) = the next data-in following DINb (x, n, a, g) according to the program-

med burst order.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 39: WRITE-to-READ – Uninterrupting

tDQSSnom

CK#

Command1WRITE2,3 NOP NOP READ NOP NOP

Address Bank a,

Col b

Bank a,

Col n

NOP

T0 T1 T2 T3T2n T4 T5T1n T6 T6n

tWTR4

CL = 2

DQ5

DQS

tDQSS

tDQSSmin CL = 2

DQ5

DQS

tDQSS

tDQSSmax CL = 2

DQ5

DQS

tDQSS

Don’t Care Transitioning Data

T5n

DIN

b+1

DIN

b+2

DIN

b+3

DIN

b+1

DIN

b+2

DIN

b+3

DIN

b+1

DIN

b+2

DIN

b+3

DIN

DOUT

n + 1

DOUT

n + 1

DOUT

n + 1

Notes: 1. The READ and WRITE commands are to the same device. However, the READ and WRITE

commands may be to different devices, in which case tWTR is not required and the

READ command could be applied earlier.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. An uninterrupted burst of 4 is shown.

4. tWTR is referenced from the first positive CK edge after the last data-in pair.

5. DINb = data-in for column b; DOUTn = data-out for column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 78 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 40: WRITE-to-READ – Interrupting

tDQSS (NOM)

CK#

Command WRITE1,2 NOP NOP NOP NOP NOP

Address Bank a,

Col b

Bank a,

Col n

READ

T0 T1 T2 T3T2n T4 T5 T5nT1n T6 T6n

CL = 3

DQ5

DQS4

tDQSS (MIN) CL = 3

DQ5

DQS4

tDQSS (MAX) CL = 3

DQ5

DQS4

Don’t Care Transitioning Data

tDQSS

DIN

b+1

DIN

b+1

DIN

b+1

DIN

DOUT

n + 1

DOUT

n + 1

DOUT

n + 1

tWTR3

Notes: 1. An interrupted burst of 4 is shown; 2 data elements are written.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. tWTR is referenced from the first positive CK edge after the last data-in pair.

4. DQS is required at T2 and T2n (nominal case) to register DM.

5. DINb = data-in for column b; DOUTn = data-out for column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 79 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 41: WRITE-to-READ – Odd Number of Data, Interrupting

tDQSS (NOM)

CK#

Command1WRITE2NOP NOP NOP NOP NOP

Address Bank a,

Col b

Bank a,

Col b

READ

T0 T1 T2 T3T2n T4 T5 T5nT1n T6 T6n

tWTR3

CL = 3

DQ5

DQS4

tDQSS (MIN) CL = 3

DQ5

DQS4

tDQSS (MAX) CL = 3

DQ5

DQS4

Don’t Care Transitioning Data

tDQSS

DIN

DOUT

n + 1

DIN

DOUT

n + 1

DOUT

n + 1

Notes: 1. An interrupted burst of 4 is shown; 1 data element is written, 3 are masked.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. tWTR is referenced from the first positive CK edge after the last data-in pair.

4. DQS is required at T2 and T2n (nominal case) to register DM.

5. DINb = data-in for column b; DOUTn = data-out for column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 80 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 42: WRITE-to-PRECHARGE – Uninterrupting

CK#

Command1WRITE2,4 NOP NOP NOP NOP

Address Bank a,

Col b

Bank

(a or all)

NOP

T0 T1 T2 T3T2n T4 T5T1n T6

DQ6

DQS

DQ6

DQS

DQ6

DQS

Don’t Care Transitioning Data

tWR5

PRE3,4

tDQSS (NOM)

tDQSS (MIN)

tDQSS (MAX)

tDQSS

DIN

b+1

DIN

b+2

DIN

b+3

DIN

b+1

DIN

b+2

DIN

b+3

DIN

b+1

DIN

b+2

DIN

b+3

Notes: 1. An uninterrupted burst 4 of is shown.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. PRE = PRECHARGE.

4. The PRECHARGE and WRITE commands are to the same device. However, the PRE-

CHARGE and WRITE commands can be to different devices; in this case, tWR is not re-

quired and the PRECHARGE command can be applied earlier.

5. tWR is referenced from the first positive CK edge after the last data-in pair.

6. DINb = data-in for column b.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 81 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 43: WRITE-to-PRECHARGE – Interrupting

tDQSS (NOM)

CK#

Command1WRITE2NOP NOP NOP NOP

Address Bank a,

Col b

Bank

(a or all)

NOP

T0 T1 T2 T3T2n T4 T5T1n T6

DQ6

DQS5

tDQSS

tDQSS (MIN)

DQ6

DQS5

tDQSS

tDQSS (MAX)

DQ6

DQS5

tDQSS

Don’t Care Transitioning Data

tWR4

PRE3

T4nT3n

DIN

b + 1

DIN

b + 1

DIN

b + 1

Notes: 1. An interrupted burst of 8 is shown; two data elements are written.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. PRE = PRECHARGE.

4. tWR is referenced from the first positive CK edge after the last data-in pair.

5. DQS is required at T4 and T4n to register DM.

6. DINb = data-in for column b.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 82 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 44: WRITE-to-PRECHARGE – Odd Number of Data, Interrupting

tDQSS (NOM)

CK#

Command1WRITE2NOP NOP NOP NOP

Address

Bank a,

Col b

Bank

(a or all)

NOP

T0 T1 T2 T3T2n T4 T5T1n T6

DQ7

DQS5, 6

DM6

tDQSS (MIN)

DQ7

DQS5, 6

DM6

tDQSS (MAX)

DQ7

DQS5, 6

DM6

tDQSS

Don’t Care Transitioning Data

DIN

tWR4

PRE3

T4nT3n

Notes: 1. An interrupted burst of 8 is shown; one data element is written.

2. A10 is LOW with the WRITE command (auto precharge is disabled).

3. PRE = PRECHARGE.

4. tWR is referenced from the first positive CK edge after the last data-in pair.

5. DQS is required at T4 and T4n to register DM.

6. If a burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n.

7. DINb = data-in for column b.

512Mb: x16, x32 Mobile LPDDR SDRAM

WRITE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice.

PRECHARGE Operation

The PRECHARGE command is used to deactivate the open row in a particular bank or

the open row in all banks. The bank(s) will be available for a subsequent row access

some specified time (tRP) after the PRECHARGE command is issued. Input A10 deter-

mines whether one or all banks will be precharged, and in the case where only one bank

is precharged (A10 = LOW), inputs BA0 and BA1 select the bank. When all banks are pre-

charged (A10 = HIGH), inputs BA0 and BA1 are treated as “Don’t Care.” After a bank has

been precharged, it is in the idle state and must be activated prior to any READ or

WRITE commands being issued to that bank. A PRECHARGE command will be treated

as a NOP if there is no open row in that bank (idle state), or if the previously open row is

already in the process of precharging.

Auto Precharge

Auto precharge is a feature that performs the same individual bank PRECHARGE func-

tion described previously, without requiring an explicit command. This is accomplished

by using A10 to enable auto precharge in conjunction with a specific READ or WRITE

command. A precharge of the bank/row that is addressed with the READ or WRITE

command is automatically performed upon completion of the READ or WRITE burst.

Auto precharge is nonpersistent; it is either enabled or disabled for each individual

READ or WRITE command.

Auto precharge ensures that the precharge is initiated at the earliest valid stage within a

burst. This earliest valid stage is determined as if an explicit PRECHARGE command

was issued at the earliest possible time without violating tRAS (MIN), as described for

each burst type in Table 19 (page 45). The READ with auto precharge enabled state or

the WRITE with auto precharge enabled state can each be broken into two parts: the ac-

cess period and the precharge period. The access period starts with registration of the

command and ends where tRP (the precharge period) begins. For READ with auto pre-

charge, the precharge period is defined as if the same burst was executed with auto pre-

charge disabled, followed by the earliest possible PRECHARGE command that still ac-

cesses all the data in the burst. For WRITE with auto precharge, the precharge period

begins when tWR ends, with tWR measured as if auto precharge was disabled. In addi-

tion, during a WRITE with auto precharge, at least one clock is required during tWR

time. During the precharge period, the user must not issue another command to the

same bank until tRP is satisfied.

This device supports tRAS lock-out. In the case of a single READ with auto precharge or

single WRITE with auto precharge issued at tRCD (MIN), the internal precharge will be

delayed until tRAS (MIN) has been satisfied.

Bank READ operations with and without auto precharge are shown in Figure 45

(page 86) and Figure 46 (page 87). Bank WRITE operations with and without auto

precharge are shown in Figure 47 (page 88) and Figure 48 (page 89).

512Mb: x16, x32 Mobile LPDDR SDRAM

PRECHARGE Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Concurrent Auto Precharge

This device supports concurrent auto precharge such that when a READ with auto pre-

charge is enabled or a WRITE with auto precharge is enabled, any command to another

bank is supported, as long as that command does not interrupt the read or write data

transfer already in process. This feature enables the precharge to complete in the bank

in which the READ or WRITE with auto precharge was executed, without requiring an

explicit PRECHARGE command, thus freeing the command bus for operations in other

banks.

512Mb: x16, x32 Mobile LPDDR SDRAM

Auto Precharge

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 85 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 45: Bank Read – With Auto Precharge

CK#

CKE

A10

BA0, BA1

tCK tCH tCL

tIS

tIH

tIS

tIH

tIS tIH

Row

tRCD

tRAS

tRC

tRP

CL = 2

T0 T1 T2 T3 T4 T5 T5n T6nT6 T7 T8

DQ4,5

DQS4

Case 1: tAC (MIN) and tDQSCK (MIN)

Case 2: tAC (MAX) and tDQSCK (MAX)

DQ4,5

DQS4

tHZ (MAX)

NOP1

Command ACTIVE

Row Col n

Bank x

Row

Bank x

ACTIVE

Bank x

NOP1NOP1NOP1

Don’t Care Transitioning Data

Address

NOP1

tRPRE

tDQSCK (MAX)

tAC (MAX)

DOUT

n + 1

DOUT

x + 1

DOUT

n + 1

DOUT

x + 1

tDQSCK (MIN)

tAC (MIN)

tLZ (MIN)

tRPRE

tRPST

tLZ (MIN)

Note 3

tRPST

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at

these times.

2. BL = 4 in the case shown.

3. Enable auto precharge.

4. Refer to Figure 30 (page 69) and Figure 31 (page 70) for detailed DQS and DQ timing.

5. DOUT n = data-out from column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

Auto Precharge

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 46: Bank Read – Without Auto Precharge

CK#

CKE

A10

BA0, BA1

tCK tCH tCL

tIS tIH

Row

tRCD

tRAS6

tRC

tRP

CL = 2

T0 T1 T2 T3 T4 T5 T5n T6nT6 T7 T8

DQ7,8

DQS7

Case 1: tAC (MIN) and tDQSCK (MIN)

Case 2: tAC (MAX) and tDQSCK (MAX)

DQ7,8

DQS7

tHZ (MAX)

NOP1

Command ACTIVE

Row Col n

Bank x

Row

Bank x

ACTIVE

Bank x

NOP1NOP1NOP1

Don’t Care Transitioning Data

Address

PRE3

Bank x5

tRPRE

tAC (MAX)

All banks

One bank

DOUT

n + 1

DOUT

n + 2

DOUT

n + 3

DOUT

n + 1

DOUT

n + 2

DOUT

n + 3

tLZ (MIN)

tDQSCK (MIN)

tAC (MIN)

tRPST

tDQSCK (MAX)

Note 4

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at

these times.

2. BL = 4 in the case shown.

3. PRE = PRECHARGE.

4. Disable auto precharge.

5. Bank x at T5 is “Don’t Care” if A10 is HIGH at T5.

6. The PRECHARGE command can only be applied at T5 if tRAS (MIN) is met.

7. Refer to Figure 30 (page 69) and Figure 31 (page 70) for DQS and DQ timing details.

8. DOUTn = data out from column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

Auto Precharge

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 47: Bank Write – With Auto Precharge

CK#

CKE

A10

BA0, BA1

tCK tCH tCL

tIS

tIH

tIS

tIH

tIS tIH

Row

tRCD

tRAS tRP

tWR

T0 T1 T2 T3 T4 T5 T5n T6 T7 T8T4n

NOP4

Command

Note 3

ACTIVE

Row Col n

WRITE2NOP4

Bank x

NOP4

Bank x

NOP4NOP4NOP4

tDQSL tDQSH tWPST

DQ1

DQS

DIN

tDS tDH

tDQSS (NOM)

Don’t Care Transitioning Data

tWPRES tWPRE

Address

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at

these times.

2. BL = 4 in the case shown.

3. Enable auto precharge.

4. DINn = data-out from column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

Auto Precharge

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 88 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 48: Bank Write – Without Auto Precharge

CK#

CKE

A10

BA0, BA1

tCK tCH tCL

tIS

tIH

tIS

tIH

tIS tIH

Row

tRCD

tRAS tRP

tWR

T0 T1 T2 T3 T4 T5 T5n T6 T7 T8T4n

NOP1NOP1

Command ACTIVE

Row Col n

WRITE2NOP1

One bank

All banks

Bank x

PRE3

Bank x

NOP1NOP1NOP1

tDQSL tDQSH tWPST

Bank x5

DQ6

DQS

DIN

tDS

tDH Don’t Care Transitioning Data

tDQSS (NOM)

tWPRE

tWPRES

Address

Note 4

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at

these times.

2. BL = 4 in the case shown.

3. PRE = PRECHARGE.

4. Disable auto precharge.

5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.

6. DOUTn = data-out from column n.

512Mb: x16, x32 Mobile LPDDR SDRAM

Auto Precharge

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 89 Micron Technology, Inc. reserves the right to change products or specifications without notice.

AUTO REFRESH Operation

Auto refresh mode is used during normal operation of the device and is analogous to

CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH com-

mand is nonpersistent and must be issued each time a refresh is required.

The addressing is generated by the internal refresh controller. This makes the address

bits a “Don’t Care” during an AUTO REFRESH command.

For improved efficiency in scheduling and switching between tasks, some flexibility in

the absolute refresh interval is provided. The auto refresh period begins when the AUTO

REFRESH command is registered and ends tRFC later.

Figure 49: Auto Refresh Mode

CKE

CK#

Command1NOP2

ValidValid

NOP2NOP2

PRE

Row

A10

BA0, BA1 Bank(s)5Bank

AR NOP2, 3 AR4NOP2, 3 ACTIVENOP2

One bank

All banks

tCK tCH tCL

tIS

tIH

Row

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

) )

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

DQ6

DM6

DQS6

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

tRFC4

tRP tRFC

T0 T1 T2 T3 T4 Ta0 Tb0

Ta1 Tb1 Tb2

Don’t Care

) )

(

)(

)

Address

(

)(

)

(

)(

)

(

)(

)

(

)(

)

) )

(

)(

)

(

)(

)

( (

) )

Notes: 1. PRE = PRECHARGE; AR = AUTO REFRESH.

2. NOP commands are shown for ease of illustration; other commands may be valid during

this time. CKE must be active during clock positive transitions.

3. NOP or COMMAND INHIBIT are the only commands supported until after tRFC time; CKE

must be active during clock positive transitions.

4. The second AUTO REFRESH is not required and is only shown as an example of two

back-to-back AUTO REFRESH commands.

5. Bank x at T1 is “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than

one bank is active (for example, must precharge all active banks).

6. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown.

Although it is not a JEDEC requirement, CKE must be active (HIGH) during the auto re-

fresh period to provide support for future functional features. The auto refresh period

begins when the AUTO REFRESH command is registered and ends tRFC later.

512Mb: x16, x32 Mobile LPDDR SDRAM

AUTO REFRESH Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice.

SELF REFRESH Operation

The SELF REFRESH command can be used to retain data in the device while the rest of

the system is powered down. When in self refresh mode, the device retains data without

external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH

command, except that CKE is disabled (LOW). All command and address input signals

except CKE are “Don’t Care” during self refresh.

During self refresh, the device is refreshed as defined in the extended mode register.

(see Partial-Array Self Refresh (page 57).) An internal temperature sensor adjusts the re-

fresh rate to optimize device power consumption while ensuring data integrity. (See

Temperature-Compensated Self Refresh (page 56).)

The procedure for exiting self refresh requires a sequence of commands. First, CK must

be stable prior to CKE going HIGH. When CKE is HIGH, the device must have NOP

commands issued for tXSR to complete any internal refresh already in progress.

During SELF REFRESH operation, refresh intervals are scheduled internally and may

vary. These refresh intervals may differ from the specified tREFI time. For this reason,

the SELF REFRESH command must not be used as a substitute for the AUTO REFRESH

command.

512Mb: x16, x32 Mobile LPDDR SDRAM

SELF REFRESH Operation

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 50: Self Refresh Mode

CK1

CK#

Command NOP AR3

Address

CKE1,2

Valid

DQS

ValidNOP

tRP4

tCH tCL tCK

tIS

tXSR5

tIS

tIH

tIS

tIS tIH

tIS

Enter self refresh mode Exit self refresh mode

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

T0 T1 Tb0Ta1

(

)(

)

(

)(

)

Don’t Care

(

)(

)

(

)(

)

Ta01

(

)(

)

tCKE

Notes: 1. Clock must be stable, cycling within specifications by Ta0, before exiting self refresh

mode.

2. CKE must remain LOW to remain in self refresh.

3. AR = AUTO REFRESH.

4. Device must be in the all banks idle state prior to entering self refresh mode.

5. Either a NOP or DESELECT command is required for tXSR time with at least two clock

pulses.

Power-Down

Power-down is entered when CKE is registered LOW. If power-down occurs when all

banks are idle, this mode is referred to as precharge power-down; if power-down occurs

when there is a row active in any bank, this mode is referred to as active power-down.

Entering power-down deactivates all input and output buffers, including CK and CK#

and excluding CKE. Exiting power-down requires the device to be at the same voltage as

when it entered power-down and received a stable clock. Note that the power-down du-

ration is limited by the refresh requirements of the device.

When in power-down, CKE LOW must be maintained at the inputs of the device, while

all other input signals are “Don’t Care.” The power-down state is synchronously exited

when CKE is registered HIGH (in conjunction with a NOP or DESELECT command).

NOP or DESELECT commands must be maintained on the command bus until tXP is

satisfied. See Figure 52 (page 94) for a detailed illustration of power-down mode.

512Mb: x16, x32 Mobile LPDDR SDRAM

Power-Down

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 51: Power-Down Entry (in Active or Precharge Mode)

CS#

RAS#, CAS#, WE#

CKE

CK#

Don’t Care

Address

RAS#, CAS#, WE#

CS#

BA0, BA1

512Mb: x16, x32 Mobile LPDDR SDRAM

Power-Down

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 52: Power-Down Mode (Active or Precharge)

CK#

Command Valid2NOP

Address

CKE

DQS

tCK tCH tCL

tIS

tIH

tIS

tIS tIH

tIH

Enter3

power-down

mode

Exit

power-down

mode

Must not exceed refresh device limits

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

T0 T1 Ta0 Ta1 Ta2T2

NOP

Don’t Care

(

)(

)

(

)(

)

Valid

Tb1

tXP1

tCKE1

tCKE

Valid

No read/write

access in progress

Valid

(

)(

)

Notes: 1. tCKE applies if CKE goes LOW at Ta2 (entering power-down); tXP applies if CKE remains

HIGH at Ta2 (exit power-down).

2. If this command is a PRECHARGE (or if the device is already in the idle state), then the

power-down mode shown is precharge power-down. If this command is an ACTIVE (or if

at least 1 row is already active), then the power-down mode shown is active power-

down.

3. No column accesses can be in progress when power-down is entered.

Deep Power-Down

Deep power-down (DPD) is an operating mode used to achieve maximum power reduc-

tion by eliminating power to the memory array. Data will not be retained after the de-

vice enters DPD mode.

Before entering DPD mode the device must be in the all banks idle state with no activity

on the data bus (tRP time must be met). DPD mode is entered by holding CS# and WE#

LOW with RAS# and CAS# HIGH at the rising edge of the clock while CKE is LOW. CKE

must be held LOW to maintain DPD mode. The clock must be stable prior to exiting

DPD mode. To exit DPD mode, assert CKE HIGH with either a NOP or DESELECT com-

mand present on the command bus. After exiting DPD mode, a full DRAM initialization

sequence is required.

512Mb: x16, x32 Mobile LPDDR SDRAM

Power-Down

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 53: Deep Power-Down Mode

tIS

All banks idle with no

activity on the data bus Exit deep power-down modeEnter deep power-down mode

CKE

CK#

Command1DPD2

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

NOP NOP PRE3

T0 T1 T2 Ta01Ta1 Ta2

NOP

Don’t Care

tCKE

Ta3

T = 200µs

Notes: 1. Clock must be stable prior to CKE going HIGH.

2. DPD = deep power-down.

3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required.

512Mb: x16, x32 Mobile LPDDR SDRAM

Power-Down

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 95 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Clock Change Frequency

One method of controlling the power efficiency in applications is to throttle the clock

that controls the device. The clock can be controlled by changing the clock frequency or

stopping the clock.

The device enables the clock to change frequency during operation only if all timing pa-

rameters are met and all refresh requirements are satisfied.

The clock can be stopped altogether if there are no DRAM operations in progress that

would be affected by this change. Any DRAM operation already in process must be

completed before entering clock stop mode; this includes the following timings: tRCD,

tRP, tRFC, tMRD, tWR, and tRPST. In addition, any READ or WRITE burst in progress

must be complete. (See READ Operation and WRITE Operation.)

CKE must be held HIGH with CK = LOW and CK# = HIGH for the full duration of the

clock stop mode. One clock cycle and at least one NOP or DESELECT is required after

the clock is restarted before a valid command can be issued.

Figure 54: Clock Stop Mode

Exit clock stop mode

CKE

CK#

Command

()()

NOP NOP

Ta1 Ta2 Tb3 Tb4

Don’t Care

Address

DQ, DQS

()()

Enter clock stop mode

(

)(

)

()()

(

)(

)

CMD2

Valid

CMD2

Valid

NOP1

()()

(

)(

)

All DRAM activities must be complete

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

(

)(

)

Notes: 1. Prior to Ta1, the device is in clock stop mode. To exit, at least one NOP is required before

issuing any valid command.

2. Any valid command is supported; device is not in clock suspend mode.

512Mb: x16, x32 Mobile LPDDR SDRAM

Clock Change Frequency

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 96 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Revision History

Rev. I, Production – 12/09

• Changed all tRFC values from 97.5ns to 72ns in Table 11 (page 26).

Rev. H, Production – 03/09

• Added a note to the tCKE symbol in Table 11 (page 26).

• Added a second paragraph to SELF REFRESH (page 42).

• Added tCKE line to Figure 50 (page 92).

Rev. G, Production – 02/09

• Removed "60-Ball VFGBA" and "90-Ball VFGBA" columns from Table 3 (page 13).

• Updated step 1 and added Figure 17 (page 51) in Initialization (page 49).

• Updated Status Read Register (page 58).

• Deleted 80Ω from Output Drive Strength (page 57).

Rev. F, Production – 10/08

• Added 1.2V I/O Option to the following:

– “Features" and "Options"

– Figure 1: “512Mb Mobile DDR Part Numbering”

– Table 6: “1.2V I/O AC/DC Electrical Characteristics and Operating Conditions”

– Table 15: “1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength)”

– Figure 19: “Extended Mode Register”

Rev. E, Production – 8/08

• Added 9mm x 13mm 90-ball package to the following:

– “Options”

– Figure 1: “512Mb Mobile DDR Part Numbering”

– Figure 8: “90-Ball VFBGA Package (9mm x 13mm),” on page 14

Rev. D, Production – 05/08

• Updated Idd Values

– Table 8: “Idd Specifications and Conditions (x16),” on page 19

– Table 9: “Idd Specifications and Conditions (x32),” on page 20

• Added “L” low-power option

– Figure 1: “512Mb Mobile DDR Part Numbering,” on page 5

– Table 10: “Idd6 Specifications and Conditions,” on page 21

• Table 10: “Idd6 Specifications and Conditions,” on page 21: Removed 70°C and 15°C

values as they are redundant and shown in Figure 9, "Typical Idd6 Curves"

• Table 11: “Electrical Characteristics and Recommended AC Operating Conditions:”

– Changed the following specification: tRC -75 to 67.5ns

– Removed note 21

512Mb: x16, x32 Mobile LPDDR SDRAM

Revision History

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Rev. C, Production – 03/08

• Added programmable burst length of 16 to “Features”

• Updated example cycle time to -6 in Figure 1: “512Mb Mobile DDR Part Numbering”

• Corrected Idd0 unit value to mA in Table 9, “Idd Specifications and Conditions (x32)”

• Added MAX values to Table 10, “Idd6 Specifications and Conditions”

• Added Figure 9: “Typical Idd6 Curves”

• Updated tDIPW (MIN) to 1.4ns, and tRC -54 (MIN) to 59.4 in Table 11, “Electrical

Characteristics and Recommended AC Operating Conditions”

• Updated note 1 and notes references in Table 12, “Target Output Drive Characteristics

(Full Strength)”

• Updated note 1 and table title in Table 13, “Target Output Drive Characteristics

(Three-Quarter Strength)”

• Updated note 1 and deleted former note 4 in Table 14, “Target Output Drive Charac-

teristics (One-Half Strength)”

• Updated document status to Production

Rev. B, Preliminary – 12/07

• Updated to include -54 speed grade, including:

– “Options”

– Table 1, “Key Timing Parameters (CL = 3)”

– Figure 1: “512Mb Mobile DDR Part Numbering”

– Table 8, “Idd Specifications and Conditions (x16)”

– Table 9, “Idd Specifications and Conditions (x32)”

– Table 11, “Electrical Characteristics and Recommended AC Operating Conditions”

• Updated all “TBDs” in the -5 columns of Table 8 and Table 9

• Changed Idd6A Max to 700μA and changed Idd6c to “TBD” in Table 10

• Change revision back to Rev. B

Rev. A, Advance – 7/07

• Initial release (released as "Rev M" in error)

Revision History for Commands, Operations, and Timing Diagrams

Update – 05/08

• Added 9mm x 13mm 90-ball package to the following:

– “Options," Figure 1: “512Mb Mobile DDR Part Numbering,” and Figure 8: “90-Ball

VFBGA Package (9mm x 13mm)”

Update – 05/08

• Updated Idd Values in Table 7: “Idd Specifications and Conditions (x16)” and Table 8:

“Idd Specifications and Conditions (x32)”

• Added “L” low-power option to Figure 1: “512Mb Mobile DDR Part Numbering” and

Table 9: “Idd6 Specifications and Conditions”

512Mb: x16, x32 Mobile LPDDR SDRAM

Revision History

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice.

• Removed 70°C and 15°C values from Table 9: “Idd6 Specifications and Conditions” as

they are redundant and are shown in Figure 9: “Typical Idd6 Curves”

• Changed the following specification: tRC -75 to 67.5ns, and removed note 21 from Ta-

ble 10: “Electrical Characteristics and Recommended AC Operating Conditions"

Update – 03/08

• Added BL 16 to the “Functional Description” and Figure 19: “Extended Mode Regis-

ter” and throughout document as appropriate: Added BL 16.

• Added BL 16 content to Table 19, “Burst Definition Table”

• Added three-quarter drive strength and deleted one-eighth drive strength, and upda-

ted to include 37 ohm (deleted 100 ohm) in "Output Drive Strength”

• Removed E7 column and updated valid column heading to E7–E0; expanded driver

strength section to include three-quarter drive strength in Figure 19: “Extended Mode

• Updated note 2 in the following:

– Figure 23: “Consecutive READ Bursts”

– Figure 24: “Nonconsecutive READ Bursts”

– Figure 25: “Random READ Accesses”

– Figure 26: “Terminating a READ Burst”

– Figure 28: “READ-to-PRECHARGE”

• Updated note 3 in the following:

– Figure 27: “READ-to-WRITE”

– Figure 37: “Random WRITE Cycles”

• Removed final note in each of the following:

– Figure 39: “WRITE-to-READ – Interrupting”

– Figure 40: “WRITE-to-READ – Odd Number of Data, Interrupting”

– Figure 42: “WRITE-to-PRECHARGE – Interrupting”

• Extended tWR to coincide with T5 transition in Figure 43: “WRITE-to-PRECHARGE –

Odd Number of Data, Interrupting”

• Updated figure references for “Concurrent Auto Precharge”

Update – 12/07

• Updated Figure 19, “Extended Mode Register,” to include mid-strength driver infor-

mation

• Corrected headings for density in Figure 21: “Status Register Definition”

Update – 07/07

• Initial Release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

512Mb: x16, x32 Mobile LPDDR SDRAM

Revision History

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice.